Abstract:
A high frequency substrate includes a first metal layer, a first dielectric layer, a second metal layer, a second dielectric layer and a high-frequency signal transmission line. The first dielectric layer is formed on the first metal layer, and the second metal layer is formed on the first dielectric layer. The first and second metal layers are maintained in a stable voltage status due to the high dielectric coefficient of the first dielectric layer. Besides, the second dielectric layer is formed on the second metal layer. High speed and high frequency transmission are achieved when signals transmitting in the high-frequency transmission line formed on the second dielectric layer due to the low dielectric coefficient of the second dielectric layer.
Abstract:
A lead-bond type chip package includes a multilayer substrate for supporting and electrical interconnecting a semiconductor chip. The multilayer substrate has a slot defined therein. The multilayer substrate comprises an interlayer circuit board having prepregs disposed thereon, a plurality of leads on the prepreg on the upper surface of the interlayer circuit board, and a plurality of solder pads for making external electrical connection on the prepreg on the lower surface of the interlayer circuit board. The leads of the multilayer substrate are bonded to corresponding bonding pads formed on the semiconductor chip. A package body is formed on the multilayer substrate around the semiconductor chip and in the slot of the multilayer substrate. The multilayer substrate is capable of providing a power or ground plane formed therein for enhancing the electrical performance of the package, and providing a high wiring density for packaging a chip with high I/O connections. This invention also provides a method of producing a multilayer substrate for use in forming a lead-bond type chip package
Abstract:
A semiconductor build-up package includes a die, a circuit board and at least a dielectric layer. The circuit board has a surface for building up the dielectric layer, and the surface has a cavity for accommodating the die. The inside of multi-layer circuit board has conductive traces for expanding the electrical function of semiconductor build-up package. Each dielectric layer has conductive columns so that the die may electrically connect with the outermost dielectric layer. At least a conductive column is bonded on the surface of the multi-layer circuit board for inner electrical connection.
Abstract:
A semiconductor build-up package includes a die, a metal carrier, and a plurality of dielectric layers. The metal carrier has a surface with a cavity for supporting the die. The surface of metal carrier is coplanar to the active surface of die for building up a plurality of dielectric layers. Each dielectric layer has metal columns for inner electrical connection. The metal carrier covers passive surface and sides of the die with a larger area for heat dissipating, so the heat generated from the die is dissipated fast through the metal carrier.
Abstract:
A chip scale package mainly comprises a substrate attached to the active surface of a semiconductor chip through an anisotropic conductive adhesive film (ACF). The substrate is provided with a plurality of contact pads on the lower surface thereof and a plurality of solder pads on the upper surface thereof wherein the contact pads are electrically coupled to corresponding solder pads. A plurality of metal bumps provided on the contact pads of the substrate. The metal bumps on the substrate are electrically coupled to corresponding bonding pads on the chip through the ACF. The side portions of the substrate and the ACF are sealed in a package body. The present invention further provides a method of making the chip scale package at the wafer level. The method is characterized by attaching substrates onto the chips of a wafer one by one so as to greatly reduce the problems associated with CTE mismatch between the wafer and the substrate thereby significantly enhancing the product yield.
Abstract:
A lead-bond type chip package includes a multilayer substrate for supporting and electrical interconnecting a semiconductor chip. The multilayer substrate has a slot defined therein. The multilayer substrate comprises an interlayer circuit board having prepregs disposed thereon, a plurality of leads on the prepreg on the upper surface of the interlayer circuit board, and a plurality of solder pads for making external electrical connection on the prepreg on the lower surface of the interlayer circuit board. The leads of the multilayer substrate are bonded to corresponding bonding pads formed on the semiconductor chip. A package body is formed on the multilayer substrate around the semiconductor chip and in the slot of the multilayer substrate. The multilayer substrate is capable of providing a power or ground plane formed therein for enhancing the electrical performance of the package, and providing a high wiring density for packaging a chip with high I/O connections. This invention also provides a method of producing a multilayer substrate for use in forming a lead-bond type chip package
Abstract:
A circuit board includes a dielectric layer, a circuit layer, and an insulation layer. The circuit layer is disposed on the dielectric layer and has a pad region and a trace region. The insulation layer is disposed on the circuit layer and covers the trace region. Here, a thickness of the pad region is less than a thickness of the trace region.
Abstract:
A lead-bond type chip package includes a multilayer substrate for supporting and electrical interconnecting a semiconductor chip. The multilayer substrate has a slot defined therein. The multilayer substrate comprises an interlayer circuit board having prepregs disposed thereon, a plurality of leads on the prepreg on the upper surface of the interlayer circuit board, and a plurality of solder pads for making external electrical connection on the prepreg on the lower surface of the interlayer circuit board. The leads of the multilayer substrate are bonded to corresponding bonding pads formed on the semiconductor chip. A package body is formed on the multilayer substrate around the semiconductor chip and in the slot of the multilayer substrate. The multilayer substrate is capable of providing a power or ground plane formed therein for enhancing the electrical performance of the package, and providing a high wiring density for packaging a chip with high I/O connections. This invention also provides a method of producing a multilayer substrate for use in forming a lead-bond type chip package.
Abstract:
A thermal enhanced ball grid array package is provided. The substrate for the package includes a metal core layer and at least a first patterned wiring layer provided thereon. A first insulating layer is provided between the first patterned wiring layer and the metal core layer. At least a second patterned wiring layer is provided on the substrate, opposite to the surface having the first patterned wiring layer. A second insulating layer having solder balls between the second patterned wiring layer and the metal core layer. The second patterned wiring layer is electrically connected to the first patterned wiring layer. Blind vias are provided in the second patterned wiring layer and the second insulating layer. A heat conductive material or solder material is filled into the blind vias to form thermal balls. The heat from the chip to the metal core layer is transferred directly through the thermal balls.
Abstract:
A BGA package includes a substrate, a chip, and a heat spreader. The spreader covers the chip, a bottom part of the spreader is mounted on an upper surface of the substrate by an adhesive. The spreader shields Electro Magnetic Interference to the chip. In addition, the substrate is made of a built-up PCB.