公开(公告)号：US07108755B2

公开(公告)日：2006-09-19

申请号：US10208330

申请日：2002-07-30

申请人： Li Ann Wetz ,  Lizabeth Ann Keser ,  Rajiv Bajaj ,  Treliant Fang

发明人： Li Ann Wetz ,  Lizabeth Ann Keser ,  Rajiv Bajaj ,  Treliant Fang

IPC分类号： B23K1/20 ,  B23K35/363 ,  C11D7/26

CPC分类号： B23K35/362 ,  B23K35/3618

摘要： A method for preparing a metal surface (34) for a soldering operation is provided. In accordance with the method, the metal surface is treated with a solder flux (31) comprising a supersaturated solution of a carboxylic acid.

摘要翻译： 提供了一种用于制备用于焊接操作的金属表面（34）的方法。 根据该方法，用包含羧酸过饱和溶液的焊剂（31）处理金属表面。

公开(公告)号：US06458622B1

公开(公告)日：2002-10-01

申请号：US09348737

申请日：1999-07-06

申请人： Lizabeth Ann Keser ,  Treliant Fang

发明人： Lizabeth Ann Keser ,  Treliant Fang

IPC分类号： H01L2144

CPC分类号： H01L24/11 ,  H01L21/02118 ,  H01L21/312 ,  H01L2224/0231 ,  H01L2224/0401 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/13022 ,  H01L2224/131 ,  H01L2924/00013 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/14 ,  H01L2224/13099 ,  H01L2924/00014

摘要： A semiconductor component (10) having a photodefinable stress compensation layer (21) and composition for the stress compensation material. The photodefinable stress compensation material is formed on a semiconductor wafer (11) and openings (22) are made photolithographically. Conductive bumps (26) are then disposed thereon and additional conductive bumps (28) are formed on the original conductive bumps (26). The photodefinable stress compensation material is composed of a photoinitiator, an epoxy having a first index of refraction, a diluent, and a filler. The indices of refraction of the epoxy-diluent combination and the filler are approximately equal. Alternatively, the photodefinable stress compensation material can be formed on a semiconductor wafer (11) having conductive bumps (46) disposed thereon. Openings (49) are formed in the stress compensation layer (47) to expose the conductive bumps (46). Additional conductive bumps (51) are formed on the original conductive bumps (46).

摘要翻译： 具有可光分解应力补偿层（21）的半导体部件（10）和用于应力补偿材料的组合物。 可光限定应力补偿材料形成在半导体晶片（11）上，并且光刻地形成开口（22）。 然后将导电凸块（26）设置在其上，并且在原始导电凸块（26）上形成附加的导电凸块（28）。 光可分解应力补偿材料由光引发剂，具有第一折射率的环氧树脂，稀释剂和填料组成。 环氧 - 稀释剂组合和填料的折射率近似相等。 或者，光可分解应力补偿材料可以形成在其上设置有导电凸块（46）的半导体晶片（11）上。 开口（49）形成在应力补偿层（47）中以露出导电凸块（46）。 附加的导电凸块（51）形成在原始导电凸块（46）上。

公开(公告)号：US06796482B2

公开(公告)日：2004-09-28

申请号：US10286438

申请日：2002-10-31

申请人： Li Ann Wetz ,  Treliant Fang

发明人： Li Ann Wetz ,  Treliant Fang

IPC分类号： B23K120

CPC分类号： H05K3/3489 ,  B23K1/0016 ,  B23K1/203 ,  B23K35/3612 ,  B23K35/3618 ,  B23K2101/42 ,  H01L2224/05001 ,  H01L2224/05026 ,  H01L2224/05572 ,  H01L2224/11334 ,  H01L2924/00014 ,  H01L2224/05599 ,  H01L2224/05099

摘要： A solder flux composition (19) is provided which comprises active ingredients and a carrier. The solder flux composition undergoes a phase separation during solder reflow to form at least a first phase (21) and a second phase (23), such that the active ingredients are disposed primarily in the first phase and the carrier is disposed primarily in the second phase. The use of this solder flux composition is found to reduce solder migration, during solder reflow, that can result in bridging in ball grid arrays and other such devices.

摘要翻译： 提供了助焊剂组合物（19），其包含活性成分和载体。 焊料组合物在焊料回流期间经历相分离以形成至少第一相（21）和第二相（23），使得活性成分主要设置在第一相中，载体主要设置在第二相 相。 发现使用这种助焊剂组合物可以在焊料回流期间减少焊料迁移，这可能导致在球栅阵列和其他这样的器件中的桥接。

公开(公告)号：US20100253375A1

公开(公告)日：2010-10-07

申请号：US12418438

申请日：2009-04-03

申请人： Treliant Fang ,  Michael Harburn ,  Onnik Yaglioglu

发明人： Treliant Fang ,  Michael Harburn ,  Onnik Yaglioglu

IPC分类号： G01R31/02 ,  H01R13/02 ,  B32B7/00 ,  B82B1/00 ,  B82B3/00

CPC分类号： G01R3/00 ,  B81C1/00031 ,  G01R1/0483 ,  G01R1/06744 ,  G01R1/07314 ,  H05K3/4007 ,  H05K2201/026 ,  H05K2201/0323 ,  H05K2201/0367 ,  H05K2201/10977 ,  H05K2203/0338 ,  Y10T29/49147 ,  Y10T29/49204 ,  Y10T29/49208 ,  Y10T29/4921 ,  Y10T29/49222 ,  Y10T428/24174

摘要： A technique for anchoring carbon nanotube columns to a substrate can include use of a filler material placed onto the surface of the substrate into area between the columns and surrounding a base portion of each of the columns.

摘要翻译： 用于将碳纳米管柱锚定到基底的技术可以包括使用放置在基底表面上的填充材料到列之间的区域并围绕每个柱的基部。

公开(公告)号：US06840374B2

公开(公告)日：2005-01-11

申请号：US10050908

申请日：2002-01-18

申请人： Igor Y. Khandros ,  Benjamin N. Eldridge ,  Treliant Fang ,  Gaetan L. Mathieu ,  Gary W. Grube ,  Michael A. Drush ,  Christopher C. Buckholtz

发明人： Igor Y. Khandros ,  Benjamin N. Eldridge ,  Treliant Fang ,  Gaetan L. Mathieu ,  Gary W. Grube ,  Michael A. Drush ,  Christopher C. Buckholtz

IPC分类号： A47L25/00 ,  B08B1/00 ,  B08B7/00 ,  C08L83/05 ,  C08L83/07 ,  C08L83/08 ,  G01R1/067 ,  G01R3/00 ,  H01L21/304 ,  H01L21/66 ,  B65D69/00 ,  B32B5/00 ,  B32B9/04

CPC分类号： C08G77/48 ,  B08B1/00 ,  B08B7/0028 ,  G01R1/06711 ,  G01R3/00 ,  Y10T428/24388 ,  Y10T428/31663

摘要： A probe cleaning apparatus for cleaning a probe tip use to test semiconductors dies having an abrasive substrate layer an a tacky gel layer on top of the abrasive surface of the abrasive substrate layer. The probe tip is cleaned by passing it through the tacky gel layer so that it comes in contact with the abrasive surface of the abrasive substrate, moving the probe tip across the abrasive surface of the substrate layer, and then removing the probe tip from the successive layers of the cleaning apparatus. The probe tip emerges from the cleaning apparatus free from debris associated with testing the semiconductor dies.

摘要翻译： 用于清洁探针头的探针清洁装置用于测试在磨料基底层的研磨表面的顶部上具有磨料基底层和粘性凝胶层的半导体模具。 通过将探针尖端通过粘性凝胶层进行清洁，使其与磨料基材的研磨表面接触，使探针尖端跨过基底层的研磨表面，然后从连续的 层的清洁装置。 探针尖端从清洁设备中出来，没有与测试半导体管芯相关的碎片。

公开(公告)号：US06664200B1

公开(公告)日：2003-12-16

申请号：US09560974

申请日：2000-04-28

申请人： Edward R. Prack ,  Frank W. Fischer ,  Treliant Fang

发明人： Edward R. Prack ,  Frank W. Fischer ,  Treliant Fang

IPC分类号： H01L2131

CPC分类号： C08J7/12 ,  C08J2379/08 ,  H01L21/02118 ,  H01L21/31058 ,  H01L21/312 ,  Y10S148/075

摘要： A method of manufacturing a semiconductor component having a layer (240, 340) comprised of polyimide includes using an etchant that is at least partially composed of aminopropanediol to etch the layer comprised of polyimide. The etchant can also include a solvent, a diluent, and water.

摘要翻译： 制造具有由聚酰亚胺构成的层（240,340）的半导体部件的方法包括使用至少部分由氨基丙二醇构成的蚀刻剂来蚀刻由聚酰亚胺构成的层。 蚀刻剂还可以包括溶剂，稀释剂和水。

公开(公告)号：US5208892A

公开(公告)日：1993-05-04

申请号：US859758

申请日：1992-03-30

申请人： John J. Burack ,  Treliant Fang ,  Jane D. LeGrange ,  Jose A. Ors

发明人： John J. Burack ,  Treliant Fang ,  Jane D. LeGrange ,  Jose A. Ors

IPC分类号： C07D251/34 ,  C08G73/06 ,  G02F1/361

CPC分类号： G02F1/3612 ,  C07D251/34 ,  C08G73/0655 ,  G02F1/3616

摘要： An optical waveguide (11) is composed substantially entirely of triazine.

摘要翻译： 光波导（11）基本上完全由三嗪组成。

公开(公告)号：US5119228A

公开(公告)日：1992-06-02

申请号：US708575

申请日：1991-05-31

申请人： Treliant Fang

发明人： Treliant Fang

IPC分类号： C07D251/34 ,  C08G73/06 ,  G02F1/361

CPC分类号： C08G73/0655 ,  C07D251/34 ,  G02F1/3612 ,  G02F1/3616 ,  Y10T428/31504

摘要： Optically nonlinear device elements such as directional couplers, switches, frequency stabilizers, optical parametric devices and modulators use as an optically nonlinear element a cross-linked triazine polymer containing a covalently bonded optically nonlinear dye moiety. A specific cross-linked triazine with this dye moiety may be made by cyclotrimerizing a p-(N,N-bis(4'-cyanatobenzyl)amino)-p'-(2,2-dicyanovinyl)azobenzene monomer. During polycyclotrimmerization or cure, the element is subjected to a poling voltage which aligns the dipoles of the dye moiety to give a large useful nonlinear susceptibility.

摘要翻译： 诸如定向耦合器，开关，频率稳定器，光学参数装置和调制器之类的光学非线性器件元件用作含有共价键合的光学非线性染料部分的交联三嗪聚合物作为光学非线性元件。 具有该染料部分的具体的交联三嗪可以通过对p-（N，N-双（4'-氰基苄基）氨基）-p' - （2,2-二氰基乙烯基）偶氮苯单体进行环化三聚体来制备。 在多环多胺化或固化过程中，该元件经受极化电压，其使染料部分的偶极子对准以产生大的有用的非线性磁化率。

公开(公告)号：US09944829B2

公开(公告)日：2018-04-17

申请号：US15332966

申请日：2016-10-24

申请人： Treliant Fang

发明人： Treliant Fang

IPC分类号： B44C1/22 ,  C23F1/00 ,  C03C15/00 ,  C03C25/68 ,  H01L21/302 ,  H01L21/461 ,  C09K13/00 ,  C09G1/02 ,  B24C11/00 ,  H01L21/321 ,  C09G1/00 ,  C09G1/04 ,  H01L21/02 ,  H01L21/306

CPC分类号： C09G1/02 ,  B24C11/00 ,  C09G1/00 ,  C09G1/04 ,  C09K3/1409 ,  C09K3/1463 ,  C09K3/1472 ,  H01L21/02013 ,  H01L21/02024 ,  H01L21/30625 ,  H01L21/3212

摘要： Silicon carbide (SiC) etchants with a generic formula of MXO2, where M is an alkali metal, X is a halogen, O is oxygen are disclosed. When mixed with an abrasive powder in an aqueous slurry form, this MXO2 etchant acts as tribochemical reactant in enhancing the SiC material removal rate during chemical mechanical polishing (CMP). The material removal rates can sometimes go up to a few order of magnitudes, as compared to the slurry without this MXO2 etchant. Typical metal in the formula MXO2 are K (potassium) and Na (sodium), X includes Cl (chlorine), Br (bromine) and I (iodine). The whole series of MXO2 compounds belong to the chemical family of metal halites or ammonium halites. Sodium chlorite, NaClO2, the simplest and most available member of the halite family, is a typical example. The enhanced polishing rate can be utilized to significantly increase the throughput of CMP operation for non-oxide wafer polishing. The polishing waste water from the CMP process can be treated with ease in the waste water treatment facilities because of the absence of toxic heavy metal ions in the polishing formulations.

公开(公告)号：US08872176B2

公开(公告)日：2014-10-28

申请号：US13253665

申请日：2011-10-05

申请人： Treliant Fang ,  John K. Gritters ,  Onnik Yaglioglu

发明人： Treliant Fang ,  John K. Gritters ,  Onnik Yaglioglu

IPC分类号： H01L23/58 ,  H01L29/10 ,  B82Y10/00 ,  G01R1/067 ,  G01R31/28

CPC分类号： G01R1/06744 ,  B82Y10/00 ,  G01R31/2886 ,  H01L2224/13 ,  H01L2924/00013 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599

摘要： Contacts of an electrical device can be made of carbon nanotube columns. Contact tips can be disposed at ends of the columns. The contact tips can be made of an electrically conductive paste applied to the ends of the columns and cured (e.g., hardened). The paste can be applied, cured, and/or otherwise treated to make the contact tips in desired shapes. The carbon nanotube columns can be encapsulated in an elastic material that can impart the dominant mechanical characteristics, such as spring characteristics, to the contacts. The contacts can be electrically conductive and can be utilized to make pressure-based electrical connections with electrical terminals or other contact structures of another device.

摘要翻译： 电气装置的触点可以由碳纳米管柱制成。 接触尖端可以放在柱的末端。 接触尖端可以由施加到柱的端部并被固化（例如硬化）的导电浆料制成。 可以施加，固化和/或以其他方式处理糊状物以使接触尖端成为所需形状。 碳纳米管柱可以被包封在弹性材料中，该弹性材料可以赋予触点更大的机械特性，例如弹簧特性。 触点可以是导电的，并且可以用于与电端子或另一器件的其它接触结构进行基于压力的电连接。