Sputter target based on titanium dioxide
    3.
    发明授权
    Sputter target based on titanium dioxide 失效
    基于二氧化钛的溅射靶

    公开(公告)号:US07431808B2

    公开(公告)日:2008-10-07

    申请号:US10223531

    申请日:2002-08-19

    CPC分类号: C23C14/3414 Y02T50/67

    摘要: An electrically conductive titanium dioxide sputter target with an electrical resistivity of less than 5 Ω-cm, which contains as an additive at least one doping agent or a mixture of doping agents in an amount of less than 5 mole %. The doping agent or agents are selected from the group including indium oxide, zinc oxide, bismuth oxide, aluminum oxide, gallium oxide, antimony oxide, and zirconium oxide. This treatment renders the titanium dioxide sputter target suitable for use in a direct-current sputtering process without any negative effects on the properties of the coating.

    摘要翻译: 导电二氧化钛溅射靶,其电阻率小于5欧姆 - 厘米,其中含有少于5摩尔%的至少一种掺杂剂或掺杂剂的混合物作为添加剂。 掺杂剂或试剂选自氧化铟,氧化锌,氧化铋,氧化铝,氧化镓,氧化锑和氧化锆。 该处理使二氧化钛溅射靶适用于直流溅射工艺,而对涂层的性能没有任何负面影响。