Method of dicing a wafer
    3.
    发明授权
    Method of dicing a wafer 有权
    切割晶片的方法

    公开(公告)号:US08809120B2

    公开(公告)日:2014-08-19

    申请号:US13029984

    申请日:2011-02-17

    IPC分类号: H01L21/301

    摘要: A method of dicing a semiconductor wafer includes forming a layer stack on a first main surface of a substrate. The layer stack and a portion of the substrate are etched according to a pattern defining an intended dicing location to obtain a trench structure. The substrate is irradiated with a laser beam to locally modify the substrate between a bottom of the trench structure and a second main surface of the substrate opposite to the first main surface.

    摘要翻译: 切割半导体晶片的方法包括在基板的第一主表面上形成层叠体。 根据限定预定切割位置的图案蚀刻层叠层和基板的一部分以获得沟槽结构。 用激光束照射衬底以局部地修改沟槽结构的底部和与第一主表面相对的衬底的第二主表面之间的衬底。