ELECTRONIC DEVICE
    1.
    发明申请

    公开(公告)号:US20250105184A1

    公开(公告)日:2025-03-27

    申请号:US18883834

    申请日:2024-09-12

    Applicant: MEDIATEK INC.

    Abstract: An electronic device is provided. The electronic device includes a semiconductor die. The semiconductor die has a first region of a first functional cell close to the peripheral edge of the semiconductor die. The semiconductor die includes a semiconductor substrate, a first signal bump, and a first power bump. The first signal bump and the first power bump are disposed on opposite surfaces of the semiconductor substrate and electrically connected to the first functional cell. The first signal bump and the first power bump both overlap the first region.

    SEMICONDUCTOR PACKAGE ASSEMBLY
    2.
    发明申请

    公开(公告)号:US20190131233A1

    公开(公告)日:2019-05-02

    申请号:US16232129

    申请日:2018-12-26

    Applicant: MEDIATEK INC.

    Abstract: A semiconductor package assembly includes a redistribution layer (RDL) structure, which RDL structure includes a conductive trace. A redistribution layer (RDL) contact pad is electrically coupled to the conductive trace, and the RDL contact pad is composed of a symmetrical portion and an extended wing portion connected to the symmetrical portion. The RDL structure includes a first region for a semiconductor die to be disposed thereon and a second region surrounding the first region, and the extended wing portion of the RDL contact pad is offset from a center of the first region.

    SEMICONDUCTOR PACKAGE STRUCTURE
    4.
    发明申请

    公开(公告)号:US20220367430A1

    公开(公告)日:2022-11-17

    申请号:US17739295

    申请日:2022-05-09

    Applicant: MEDIATEK INC.

    Abstract: A semiconductor package structure includes a substrate, a redistribution layer, a first semiconductor die, and a first capacitor. The substrate has a wiring structure. The redistribution layer is disposed over the substrate. The first semiconductor die is disposed over the redistribution layer. The first capacitor is disposed in the substrate and is electrically coupled to the first semiconductor die. The first capacitor includes a first capacitor substrate, a plurality of first capacitor cells, and a first through via. The first capacitor substrate has a first top surface and a first bottom surface. The first capacitor cells are disposed in the first capacitor substrate. The first through via is disposed in the first capacitor substrate and electrically couples the first capacitor cells to the wiring structure on the first top surface and the first bottom surface.

    SEMICONDUCTOR PACKAGE ASSEMBLY
    6.
    发明申请

    公开(公告)号:US20250105237A1

    公开(公告)日:2025-03-27

    申请号:US18893113

    申请日:2024-09-23

    Applicant: MEDIATEK INC.

    Abstract: A semiconductor package assembly is provided. The semiconductor package assembly includes first and a second semiconductor dies. The first semiconductor die has a first surface and a second surface opposite the first surface. The first semiconductor die includes a first interface and a second interface. The second interface is arranged beside the first interface. The second interface is farther from the corresponding first edge of the first semiconductor die than the first interface. The second semiconductor die is stacked on the first semiconductor die. The semiconductor package assembly further includes a first conductive bump and a second conductive bump. The first conductive bump is disposed on the first surface of the first semiconductor die. The second conductive bump is disposed on the second surface of the first semiconductor die. The second semiconductor die is electrically coupled to the first semiconductor die by the second interface.

    SEMICONDUCTOR PACKAGE STRUCTURE
    10.
    发明公开

    公开(公告)号:US20230317580A1

    公开(公告)日:2023-10-05

    申请号:US18329721

    申请日:2023-06-06

    Applicant: MEDIATEK INC.

    Abstract: A semiconductor package structure having a frontside redistribution layer, a stacking structure disposed over the frontside redistribution layer and having a first semiconductor die and a second semiconductor die over the first semiconductor die. A backside redistribution layer is disposed over the stacking structure, a first intellectual property (IP) core is disposed in the stacking structure and electrically coupled to the frontside redistribution layer through a first routing channel. A second IP core is disposed in the stacking structure and is electrically coupled to the backside redistribution layer through a second routing channel, wherein the second routing channel is different from the first routing channel and electrically insulated from the frontside redistribution layer.

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