公开(公告)号：US06967407B2

公开(公告)日：2005-11-22

申请号：US10333838

申请日：2001-06-25

申请人： Miharu Otani ,  Jun Tanaka ,  Katsuhiko Hotta ,  Yasumichi Suzuki ,  Takashi Inoue

发明人： Miharu Otani ,  Jun Tanaka ,  Katsuhiko Hotta ,  Yasumichi Suzuki ,  Takashi Inoue

IPC分类号： C08J7/00 ,  C08G77/14 ,  H01L21/311 ,  H01L21/312 ,  H01L21/316 ,  H01L21/60 ,  H01L21/768 ,  H01L23/31 ,  H01L23/522 ,  H01L23/532 ,  H01L23/58 ,  H01L23/48 ,  H01L21/4763

CPC分类号： H01L21/02126 ,  H01L21/02118 ,  H01L21/022 ,  H01L21/02282 ,  H01L21/0234 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/3122 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76808 ,  H01L21/76814 ,  H01L21/76819 ,  H01L21/76835 ,  H01L23/3114 ,  H01L23/5329 ,  H01L23/53295 ,  H01L23/585 ,  H01L24/11 ,  H01L24/45 ,  H01L24/48 ,  H01L2221/1031 ,  H01L2224/02166 ,  H01L2224/0401 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05569 ,  H01L2224/05572 ,  H01L2224/13099 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/4824 ,  H01L2224/48247 ,  H01L2224/48599 ,  H01L2224/73215 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01093 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/30105 ,  H01L2924/00 ,  H01L2224/05552 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device capable of high speed operation with a substantially small interlayer capacitance is produced by steps of using an insulating film comprising an organic insulating film and an insulating film composed of an organometallic polymer material as an interlayer insulating film formed by coating, patterning the insulating film in a semi-thermosetting state, etching the organic insulating film as the lower layer by means of the organometallic polymer as a mask, using a plasma gas containing oxygen as the main component, and then conducting ultimate baking treatment of these insulating films.

摘要翻译： 通过使用包含有机绝缘膜的绝缘膜和由有机金属聚合物材料构成的绝缘膜作为通过涂覆形成的层间绝缘膜的步骤，制造能够实现具有基本上小的层间电容的高速操作的半导体器件， 以半固化状态的薄膜，以有机金属聚合物作为掩模，以含有氧的等离子体气体为主要成分，对作为下层的有机绝缘膜进行蚀刻，然后进行绝缘膜的最终烘烤处理。

公开(公告)号：US5208656A

公开(公告)日：1993-05-04

申请号：US674605

申请日：1991-03-25

申请人： Haruhiko Matsuyama ,  Mitsuo Yoshimoto ,  Jun Tanaka ,  Fusaji Shoji ,  Hitoshi Yokono ,  Takashi Inoue ,  Tetsuya Yamazaki ,  Minoru Tanaka ,  Hidetaka Shigi

发明人： Haruhiko Matsuyama ,  Mitsuo Yoshimoto ,  Jun Tanaka ,  Fusaji Shoji ,  Hitoshi Yokono ,  Takashi Inoue ,  Tetsuya Yamazaki ,  Minoru Tanaka ,  Hidetaka Shigi

IPC分类号： H05K3/46 ,  H01L21/60 ,  H01L23/498

CPC分类号： H01L23/49827 ,  H01L23/49822 ,  H01L2924/0002 ,  H01L2924/09701

摘要： A multilayer wiring substrate having high reliability can be produced in good productivity by subjecting metal wiring layers to stabilization treatment on the surface with a metal such as Cr, Mo or the like or an aqueous solution of water glass so as to prevent generation of hillocks or whiskers and to improve chemical resistance.

摘要翻译： 通过使金属布线层通过金属如Cr，Mo等在表面上进行稳定化处理或水玻璃水溶液，可以以良好的生产率制造具有高可靠性的多层布线基板，以防止产生小丘或 晶须并改善耐化学性。

公开(公告)号：US5234526A

公开(公告)日：1993-08-10

申请号：US705523

申请日：1991-05-24

申请人： Ching-Hwa Chen ,  David Pirkle ,  Takashi Inoue ,  Takashi Inoue ,  Shunji Miyahara ,  Masahiko Tanaka

发明人： Ching-Hwa Chen ,  David Pirkle ,  Takashi Inoue ,  Takashi Inoue ,  Shunji Miyahara ,  Masahiko Tanaka

IPC分类号： H05H1/46 ,  C23C16/50 ,  C23C16/511 ,  C23F4/00 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31 ,  H01P7/06

CPC分类号： H01J37/32238 ,  H01J37/32192

摘要： A microwave transmitting window for a plasma processing device. The window is a body of one or more pieces of the same or different dielectric materials. A surface of the window facing a microwave transmitting horn or waveguide is planar and extends perpendicularly to an axial direction. An opposite surface of the window is recessed such that the body has a non-uniform thickness between the two surfaces. The recessed surface can have various shapes and the overall size of the window can be equal to the size of a plasma formation chamber of the plasma processing device. The outlet of the plasma formation chamber can be formed in an end wall or the outlet can be formed by the inner periphery of the plasma formation chamber.

摘要翻译： 一种用于等离子体处理装置的微波发射窗。 窗口是一个或多个相同或不同介电材料的主体。 面向微波发射喇叭或波导的窗口的表面是平面的并且垂直于轴向方向延伸。 窗口的相对表面凹陷，使得主体在两个表面之间具有不均匀的厚度。 凹陷表面可以具有各种形状，并且窗口的总体尺寸可以等于等离子体处理装置的等离子体形成室的尺寸。 等离子体形成室的出口可以形成在端壁中，或者出口可以由等离子体形成室的内周形成。

公开(公告)号：US09267655B2

公开(公告)日：2016-02-23

申请号：US13459485

申请日：2012-04-30

申请人： Hidetada Tanaka ,  Takashi Inoue ,  Takayuki Yagi ,  Ken Kato ,  Tsukasa Tokida ,  Hidemichi Sone

发明人： Hidetada Tanaka ,  Takashi Inoue ,  Takayuki Yagi ,  Ken Kato ,  Tsukasa Tokida ,  Hidemichi Sone

IPC分类号： F21S8/10

CPC分类号： F21S48/1305 ,  F21S41/143 ,  F21S41/147 ,  F21S41/192 ,  F21S41/39 ,  F21S41/47 ,  F21S45/43

摘要： A vehicle lamp includes: an LED mount on which an LED is placed; an attachment that fixes the LED to the LED mount; a power supply that supplies power to the LED; a first optical member that controls light emitted from the LED; and a second optical member that controls light emitted from the first optical member. The power supply and the first optical member are provided at the attachment.

摘要翻译： 车灯包括：放置LED的LED安装座; 将LED固定到LED支架的附件; 供电给LED的电源; 第一光学构件，其控制从所述LED发射的光; 以及第二光学构件，其控制从第一光学构件发射的光。 电源和第一光学构件设置在附件处。

公开(公告)号：US09200632B2

公开(公告)日：2015-12-01

申请号：US13820067

申请日：2011-09-29

申请人： Takashi Inoue ,  Masanori Masuda ,  Hiromichi Ueno ,  Mohammod Anwar Hossain ,  Akira Matsuoka

发明人： Takashi Inoue ,  Masanori Masuda ,  Hiromichi Ueno ,  Mohammod Anwar Hossain ,  Akira Matsuoka

IPC分类号： F04C18/16 ,  F04C18/00 ,  F04C18/52 ,  F04C28/12

CPC分类号： F04C18/00 ,  F04C18/16 ,  F04C18/52 ,  F04C28/12 ,  F04C2270/17

摘要： A screw compressor includes a casing having low and high pressure spaces, a screw rotor inserted in a cylinder part of the casing, and a slide valve disclosed in the cylinder part. The screw rotor has a plurality of helical grooves forming a compression chamber. The slide valve is moveable along an axis of the screw rotor and faces an outer periphery of the screw rotor to form a discharge port to communicating the compression chamber with the high pressure space. Fluid in the low pressure space is sucked into the compression chamber, compressed, and then discharged to the high-pressure space when the screw rotor rotates. The slide valve includes a sealing projection located on a back surface of the slide valve opposite to the screw rotor, and separating the low and high pressure spaces from each other when the sealing projection is in slidable contact with the casing.

摘要翻译： 螺杆压缩机包括具有低压和高压空间的壳体，插入壳体的气缸部分中的螺杆转子和在气缸部分中公开的滑阀。 螺杆转子具有形成压缩室的多个螺旋槽。 滑阀可以沿着螺杆转子的轴线移动并且面向螺杆转子的外周，以形成将压缩室与高压空间连通的排出口。 低压空间中的流体被吸入压缩室，压缩，然后当螺杆转子旋转时排出到高压空间。 滑阀包括位于滑阀的与螺旋转子相对的后表面上的密封突起，并且当密封突起与壳体可滑动接触时，将低压空间与高压空间分开。

公开(公告)号：US09099634B2

公开(公告)日：2015-08-04

申请号：US13405415

申请日：2012-02-27

申请人： Takashi Inoue ,  Hiroyuki Nakamura

发明人： Takashi Inoue ,  Hiroyuki Nakamura

IPC分类号： H03H9/72 ,  H03H9/64 ,  H01L41/053 ,  H03H9/05 ,  H03H9/10 ,  H03H3/08

CPC分类号： H01L41/053 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/18 ,  H01L2924/1815 ,  H03H3/08 ,  H03H3/10 ,  H03H9/02102 ,  H03H9/0576 ,  H03H9/059 ,  H03H9/1085 ,  H03H9/1092 ,  H03H9/64

摘要： An elastic-wave filter device includes a first piezoelectric substrate, a second piezoelectric substrate, a first pillar-like wiring electrode, and a second pillar-like wiring electrode. The first and second substrates have a first and a second IDT electrodes on their top faces respectively. A lateral face of the second substrate confronts a lateral face of the first substrate. The first pillar-like electrode and the second pillar-like electrode are formed above the first and the second substrates respectively, and are electrically connected to the first and the second IDT electrodes respectively. The first substrate is thicker than the second substrate. A distance between a plane including the top face of the first substrate and a plane including the top face of the second substrate is smaller than a distance between a plane including an underside of the first substrate and a plane including an underside of the second substrate.

摘要翻译： 弹性波滤波器装置包括第一压电基板，第二压电基板，第一柱状布线电极和第二柱状布线电极。 第一和第二基板分别在其顶面上具有第一和第二IDT电极。 第二基板的侧面面对第一基板的侧面。 第一柱状电极和第二柱状电极分别形成在第一和第二基板的上方，分别电连接到第一和第二IDT电极。 第一衬底比第二衬底厚。 包括第一基板的顶面的平面和包括第二基板的顶面的平面之间的距离小于包括第一基板的下侧的平面和包括第二基板的下侧的平面之间的距离。

公开(公告)号：US08716835B2

公开(公告)日：2014-05-06

申请号：US13124873

申请日：2009-10-16

申请人： Yuji Ando ,  Hironobu Miyamoto ,  Tatsuo Nakayama ,  Yasuhiro Okamoto ,  Takashi Inoue ,  Kazuki Ota

发明人： Yuji Ando ,  Hironobu Miyamoto ,  Tatsuo Nakayama ,  Yasuhiro Okamoto ,  Takashi Inoue ,  Kazuki Ota

IPC分类号： H01L29/66 ,  H01L29/737 ,  H01L29/20

CPC分类号： H01L29/7371 ,  H01L29/0649 ,  H01L29/0817 ,  H01L29/0821 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/475 ,  H01L29/66318

摘要： A bipolar transistor is provided with an emitter layer, a base layer and a collector layer. The emitter layer is formed above a substrate and is an n-type conductive layer including a first nitride semiconductor. The base layer is formed on the emitter layer and is a p-type conductive including a second nitride semiconductor. The collector layer is formed on the base layer and includes a third nitride semiconductor. The collector layer, the base layer and the emitter layer are formed such that a crystal growth direction to the substrate surface is parallel to a substrate direction of [000-1]. The third nitride semiconductor contains InycAlxcGa1-xc-ycN (0•xc•1, 0•yc•1, 0

摘要翻译： 双极晶体管设置有发射极层，基极层和集电极层。 发射极层形成在衬底之上，并且是包括第一氮化物半导体的n型导电层。 基极层形成在发射极层上，是包含第二氮化物半导体的p型导体。 集电极层形成在基极层上并且包括第三氮化物半导体。 形成集电体层，基极层和发射极层，使得到基板表面的晶体生长方向平行于[000-1]的基板方向。 第三氮化物半导体含有InycAlxcGa1-xc-ycN（0·xc·1,0,0·yc·1,0,0cc·yc·1）。 第三氮化物半导体中的表面侧的a轴长度比基板侧的a轴长短。

公开(公告)号：US08716755B2

公开(公告)日：2014-05-06

申请号：US13553759

申请日：2012-07-19

申请人： Takashi Inoue ,  Tatsuo Nakayama ,  Yasuhiro Okamoto ,  Hironobu Miyamoto

发明人： Takashi Inoue ,  Tatsuo Nakayama ,  Yasuhiro Okamoto ,  Hironobu Miyamoto

IPC分类号： H01L29/66

CPC分类号： H01L29/778 ,  H01L21/02458 ,  H01L21/0254 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/4236 ,  H01L29/432 ,  H01L29/517 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/7783

摘要： Compression strains are generated at an interface between the cap layer and the barrier layer and an interface between the channel layer and the buffer layer and a tensile strain is generated at an interface between the barrier layer and the channel layer. Therefore, negative charge is higher than positive charge at the interface between the cap layer and the barrier layer and the interface between the channel layer and the buffer layer, while positive charge is higher than negative charge at the interface between the barrier layer and the channel. The channel layer has a stacked layer structure of a first layer, a second layer, and a third layer. The second layer has a higher electron affinity than those of the first layer and the third layer.

摘要翻译： 在帽层和阻挡层之间的界面处产生压缩应变，并且在沟道层和缓冲层之间的界面处产生压缩应变，并且在阻挡层和沟道层之间的界面处产生拉伸应变。 因此，负电荷高于帽层和阻挡层之间的界面处的正电荷以及沟道层与缓冲层之间的界面，而正电荷高于阻挡层和沟道之间的界面处的负电荷 。 沟道层具有第一层，第二层和第三层的堆叠层结构。 第二层比第一层和第三层具有更高的电子亲和力。

公开(公告)号：US08687067B2

公开(公告)日：2014-04-01

申请号：US13542960

申请日：2012-07-06

申请人： Takeo Oshima ,  Takashi Maekawa ,  Ryuuichi Sawada ,  Haruo Yanagisawa ,  Chinatsu Sakurai ,  Akinori Iwabuchi ,  Shinya Tamizu ,  Takashi Inoue

发明人： Takeo Oshima ,  Takashi Maekawa ,  Ryuuichi Sawada ,  Haruo Yanagisawa ,  Chinatsu Sakurai ,  Akinori Iwabuchi ,  Shinya Tamizu ,  Takashi Inoue

IPC分类号： H04N17/00 ,  H04N7/18

CPC分类号： B60R1/00 ,  G06T7/80 ,  G06T2207/10004 ,  G06T2207/20092 ,  G06T2207/30244 ,  G06T2207/30252 ,  H04N17/002

摘要： An object of the present invention is to simplify a calibration operation of a camera and to shorten a time necessary for calibration. A camera calibration device 10 is mounted on a predetermined position of a movable object 100 and includes a camera 11 configured to take an image including an index 41 provided outside the movable object 100, an image superimposing unit 122 configured to generate a superimposed image by superimposing a calibration object 42 having a position adjustment part and a rotation adjustment part on the image taken by the camera 11, and a calculation unit 124 configured to calculate, based on a position of the calibration object 42 after being shifted in the superimposed image such that an end or a center of the index 41 meets the position adjustment part and a part of the index other than the end or the center overlaps the rotation adjustment part, parameters relative to a pan angle, a tilt angle and a roll angle for calibration of the camera mounting position.

摘要翻译： 本发明的目的是简化照相机的校准操作并缩短校准所需的时间。 相机校准装置10安装在可移动物体100的预定位置，并且包括被配置为拍摄包括设置在可移动物体100外部的索引41的图像的照相机11，被配置为通过叠加产生叠加图像的图像叠加单元122 在摄像机11拍摄的图像上具有位置调整部和旋转调整部的校准对象42，以及计算部124，其基于校准对象42在叠加图像中移位后的位置， 索引41的端部或中心与位置调整部分相遇，并且除了端部或中心之外的索引的一部分与旋转调节部分重叠，相对于摇摄角度的参数，用于校准的倾斜角度和滚动角度 相机安装位置。

公开(公告)号：US08674407B2

公开(公告)日：2014-03-18

申请号：US12919640

申请日：2009-03-12

申请人： Yuji Ando ,  Yasuhiro Okamoto ,  Kazuki Ota ,  Takashi Inoue ,  Tatsuo Nakayama ,  Hironobu Miyamoto

发明人： Yuji Ando ,  Yasuhiro Okamoto ,  Kazuki Ota ,  Takashi Inoue ,  Tatsuo Nakayama ,  Hironobu Miyamoto

IPC分类号： H01L29/66

CPC分类号： H01L29/7783 ,  H01L29/2003 ,  H01L29/4236 ,  H01L29/518 ,  H01L29/7785

摘要： The present invention provides a semiconductor device having such a structure formed by sequentially laminating a lower barrier layer composed of lattice-relaxed AlxGa1-xN (0≦x≦1), a channel layer composed of InyGa1-yN (0≦y≦1) with compressive strain and a contact layer composed of AlzGa1-zN (0≦z≦1), wherein a two-dimensional electron gas is produced in the vicinity of an interface of said InyGa1-yN channel layer with said AlzGa1-zN contact layer; a gate electrode is formed so as to be embedded in the recessed portion with intervention of an insulating film, which recessed portion is formed by removing a part of said AlzGa1-zN contact layer by etching it away until said InyGa1-yN channel layer is exposed; and, ohmic electrodes are formed on the AlzGa1-zN contact layer. Thus, the semiconductor device has superior uniformity and reproducibility of the threshold voltage while maintaining a low gate leakage current, and is also applicable to the enhancement mode type.

摘要翻译： 本发明提供一种具有这样的结构的半导体器件，该半导体器件通过依次层叠由晶格弛豫的Al x Ga 1-x N（0 @ x @ 1）构成的下阻挡层，由InyGa1-yN（0 @ y @ 1） 具有压应变和由Al z Ga 1-z N（0 @ z @ 1）组成的接触层，其中在所述In y Ga 1-y N沟道层与所述Al z Ga 1-z N接触层的界面附近产生二维电子气; 通过介入绝缘膜形成嵌入在凹陷部分中的栅电极，该凹陷部分通过蚀刻除去所述AlzGa1-zN接触层的一部分而形成，直到所述In y Ga 1-y N沟道层暴露 ; 并且在AlzGa1-zN接触层上形成欧姆电极。 因此，半导体器件在保持低栅极漏电流的同时具有优异的阈值电压的均匀性和再现性，并且也适用于增强型。