公开(公告)号：US20060273326A1

公开(公告)日：2006-12-07

申请号：US11425595

申请日：2006-06-21

申请人： Osamu Goto ,  Takeharu Asano ,  Yasuhiko Suzuki ,  Motonobu Takeya ,  Katsuyoshi Shibuya ,  Takashi Mizuno ,  Tsuyoshi Tojo ,  Shiro Uchida ,  Masao Ikeda

发明人： Osamu Goto ,  Takeharu Asano ,  Yasuhiko Suzuki ,  Motonobu Takeya ,  Katsuyoshi Shibuya ,  Takashi Mizuno ,  Tsuyoshi Tojo ,  Shiro Uchida ,  Masao Ikeda

IPC分类号： H01L33/00

CPC分类号： H01L33/0075 ,  B82Y20/00 ,  H01L33/04 ,  H01L33/06 ,  H01L33/32 ,  H01S5/0425 ,  H01S5/2004 ,  H01S5/2013 ,  H01S5/3201 ,  H01S5/34333 ,  H01S2301/173 ,  H01S2304/12

摘要： A semiconductor light emitting device made of nitride III-V compound semiconductors includes an active layer made of a first nitride III-V compound semiconductor containing In and Ga, such as InGaN; an intermediate layer made of a second nitride III-V compound semiconductor containing In and Ga and different from the first nitride III-V compound semiconductor, such as InGaN; and a cap layer made of a third nitride III-V compound semiconductor containing Al and Ga, such as p-type AlGaN, which are deposited in sequential contact.

摘要翻译： 由氮化物III-V族化合物半导体制成的半导体发光器件包括由含有In和Ga的第一氮化物III-V化合物半导体构成的有源层，例如InGaN; 由包含In和Ga的不同于第一氮化物III-V化合物半导体的第二氮化物III-V化合物半导体制成的中间层，例如InGaN; 以及由含有Al和Ga的第三氮化物III-V化合物半导体（例如p型AlGaN）制成的覆盖层，其以顺序接触沉积。

公开(公告)号：US06995406B2

公开(公告)日：2006-02-07

申请号：US10486050

申请日：2003-06-06

申请人： Tsuyoshi Tojo ,  Yoshifumi Yabuki ,  Shinichi Ansai ,  Tomonori Hino ,  Osamu Goto ,  Tsuyoshi Fujimoto ,  Osamu Matsumoto ,  Motonobu Takeya ,  Yoshio Oofuji

发明人： Tsuyoshi Tojo ,  Yoshifumi Yabuki ,  Shinichi Ansai ,  Tomonori Hino ,  Osamu Goto ,  Tsuyoshi Fujimoto ,  Osamu Matsumoto ,  Motonobu Takeya ,  Yoshio Oofuji

IPC分类号： H01L33/00

CPC分类号： B82Y20/00 ,  H01L2224/18 ,  H01L2224/24137 ,  H01L2224/73267 ,  H01S5/02276 ,  H01S5/042 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/34333 ,  H01S5/4031

摘要： In a multi-beam semiconductor laser including nitride III–V compound semiconductor layers stacked on one surface of a substrate of sapphire or other material to form laser structures, and including a plurality of anode electrodes and a plurality of cathode electrodes formed on the nitride III–V compound semiconductor layers, one of the anode electrodes is formed to bridge over one of the cathode electrodes via an insulating film, and another anode electrode is formed to bridge over another of the cathode electrodes via an insulating film.

摘要翻译： 在包括层叠在蓝宝石或其他材料的基板的一个表面上的氮化物III-V化合物半导体层以形成激光结构的多光束半导体激光器中，并且包括形成在氮化物III上的多个阳极电极和多个阴极电极 -V化合物半导体层，其中一个阳极形成为通过绝缘膜桥接在一个阴极电极上，并且另一个阳极电极形成为通过绝缘膜桥接在另一个阴极电极上。

公开(公告)号：US06797595B2

公开(公告)日：2004-09-28

申请号：US10350190

申请日：2003-01-24

申请人： Motonobu Takeya

发明人： Motonobu Takeya

IPC分类号： H01L21265

CPC分类号： B82Y20/00 ,  H01L21/3245 ,  H01L33/0095 ,  H01L33/325 ,  H01S5/3063 ,  H01S5/34333 ,  H01S2304/04

摘要： A method of heat-treating a nitride compound semiconductor layer, comprising heating a nitride compound semiconductor layer doped with a p-type impurity at a temperature that is at least 200° C. but less than 400° C. for at least 100 minutes.

摘要翻译： 一种热处理氮化物半导体层的方法，包括在至少200℃但小于400℃的温度下加热掺杂有p型杂质的氮化物半导体层至少100分钟。

公开(公告)号：US07439546B2

公开(公告)日：2008-10-21

申请号：US11425595

申请日：2006-06-21

申请人： Osamu Goto ,  Takeharu Asano ,  Yasuhiko Suzuki ,  Motonobu Takeya ,  Katsuyoshi Shibuya ,  Takashi Mizuno ,  Tsuyoshi Tojo ,  Shiro Uchida ,  Masao Ikeda

发明人： Osamu Goto ,  Takeharu Asano ,  Yasuhiko Suzuki ,  Motonobu Takeya ,  Katsuyoshi Shibuya ,  Takashi Mizuno ,  Tsuyoshi Tojo ,  Shiro Uchida ,  Masao Ikeda

IPC分类号： H01L27/15 ,  H01L33/00

CPC分类号： H01L33/0075 ,  B82Y20/00 ,  H01L33/04 ,  H01L33/06 ,  H01L33/32 ,  H01S5/0425 ,  H01S5/2004 ,  H01S5/2013 ,  H01S5/3201 ,  H01S5/34333 ,  H01S2301/173 ,  H01S2304/12

摘要： A semiconductor light emitting device made of nitride III-V compound semiconductors includes an active layer made of a first nitride III-V compound semiconductor containing In and Ga, such as InGaN; an intermediate layer made of a second nitride III-V compound semiconductor containing In and Ga and different from the first nitride III-V compound semiconductor, such as InGaN; and a cap layer made of a third nitride III-V compound semiconductor containing Al and Ga, such as p-type AlGaN, which are deposited in sequential contact.

公开(公告)号：US07282379B2

公开(公告)日：2007-10-16

申请号：US11086597

申请日：2005-03-22

申请人： Osamu Goto ,  Takeharu Asano ,  Motonobu Takeya ,  Katsunori Yanashima

发明人： Osamu Goto ,  Takeharu Asano ,  Motonobu Takeya ,  Katsunori Yanashima

IPC分类号： H01L21/20

CPC分类号： C30B25/02 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/007 ,  H01S5/0207 ,  H01S5/32341 ,  H01S2304/12

摘要： Provided is a nitride semiconductor having a larger low-defective region on a surface thereof, a semiconductor device using the nitride semiconductor, a method of manufacturing a nitride semiconductor capable of easily reducing surface defects in a step of forming a layer through lateral growth, and a method of manufacturing a semiconductor device manufactured by the use of the nitride semiconductor. A seed crystal portion is formed into stripes on a substrate with a buffer layer sandwiched therebetween. Then, a crystal is grown from the seed crystal portion in two steps of growth conditions to form a nitride semiconductor layer. In a first step, a low temperature growth portion having a trapezoidal-shaped cross section in a layer thickness direction is formed at a growth temperature of 1030° C., and in a second step, lateral growth predominantly takes place at a growth temperature of 1070° C. Then, a high temperature growth potion is formed between the low temperature growth portions. Thereby, hillocks and lattice defects can be reduced in a region of the surface of the nitride semiconductor layer above the low temperature growth portion.

摘要翻译： 提供一种其表面上具有较大缺陷区域的氮化物半导体，使用该氮化物半导体的半导体器件，能够通过横向生长形成层的步骤中能够容易地减少表面缺陷的氮化物半导体的制造方法，以及 制造通过使用氮化物半导体制造的半导体器件的方法。 籽晶部分在衬底上形成条纹，缓冲层夹在其间。 然后，在生长条件的两个步骤中从籽晶部分生长晶体，以形成氮化物半导体层。 在第一步骤中，在1030℃的生长温度下形成具有层厚度方向的梯形截面的低温生长部分，在第二步骤中，横向生长主要发生在生长温度 1070℃。然后，在低温生长部分之间形成高温生长剂。 因此，可以在低温生长部分以上的氮化物半导体层的表面的区域中减小小丘和晶格缺陷。

公开(公告)号：US06861340B2

公开(公告)日：2005-03-01

申请号：US10326072

申请日：2002-12-23

申请人： Motonobu Takeya

发明人： Motonobu Takeya

IPC分类号： C23C16/34 ,  H01L21/26 ,  H01L21/268 ,  H01L21/324 ,  H01L21/331 ,  H01L29/205 ,  H01L29/73 ,  H01L33/00 ,  H01L33/32 ,  H01L33/40 ,  H01S5/323 ,  H01S5/343 ,  H01L21/265 ,  H01L21/425 ,  H01L21/21

CPC分类号： B82Y20/00 ,  H01L21/3245 ,  H01L33/0095 ,  H01L33/325 ,  H01S5/3063 ,  H01S5/34333 ,  H01S2304/04

摘要： A method of heat-treating a nitride compound semiconductor layer, comprising heating a nitride compound semiconductor layer doped with a p-type impurity at a temperature that is at least 200° C. but less than 400° C. for at least 100 minutes.

摘要翻译： 一种热处理氮化物半导体层的方法，包括在至少200℃但小于400℃的温度下加热掺杂有p型杂质的氮化物半导体层至少100分钟。

公开(公告)号：US20050040409A1

公开(公告)日：2005-02-24

申请号：US10932697

申请日：2004-09-02

申请人： Motonobu Takeya ,  Takeharu Asano ,  Masao Ikeda

发明人： Motonobu Takeya ,  Takeharu Asano ,  Masao Ikeda

IPC分类号： H01L33/00 ,  H01L33/04 ,  H01L33/06 ,  H01L33/32 ,  H01S5/02 ,  H01S5/20 ,  H01S5/32 ,  H01S5/323 ,  H01S5/343 ,  H01L29/06

CPC分类号： B82Y20/00 ,  H01L33/007 ,  H01L33/02 ,  H01L33/04 ,  H01S5/0213 ,  H01S5/2004 ,  H01S5/3216 ,  H01S5/34333

摘要： In a semiconductor light emitting device such as a semiconductor laser using nitride III-V compound semiconductors and having a structure interposing an active layer between an n-side cladding layer and a p-side cladding layer, the p-side cladding layer is made of an undoped or n-type first layer 9 and a p-type second layer 12 that are deposited sequentially from nearer to remoter from the active layer. The first layer 9 is not thinner than 50 nm. The p-type second layer 12 includes a p-type third layer having a larger band gap inserted therein as an electron blocking layer. Thus the semiconductor light emitting device is reduced in operation voltage while keeping a thickness of the p-side cladding layer necessary for ensuring favorable optical properties.

摘要翻译： 在使用氮化物III-V族化合物半导体的半导体激光器等半导体发光装置中，在n侧包覆层和p侧覆层之间具有活性层的结构，p侧包覆层由 未掺杂或n型第一层9和p型第二层12，其从有源层更接近地远离沉积。 第一层9不比50nm薄。 p型第二层12包括其中插入较大带隙的p型第三层作为电子阻挡层。 因此，为了确保良好的光学性能，半导体发光器件的操作电压降低，同时保持p侧覆层的厚度。

公开(公告)号：US06836498B2

公开(公告)日：2004-12-28

申请号：US09874828

申请日：2001-06-05

申请人： Motonobu Takeya ,  Katsunori Yanashima ,  Takeharu Asano ,  Osamu Goto ,  Shinro Ikeda ,  Katsuyoshi Shibuya ,  Tomonori Hino ,  Satoru Kijima ,  Masao Ikeda

发明人： Motonobu Takeya ,  Katsunori Yanashima ,  Takeharu Asano ,  Osamu Goto ,  Shinro Ikeda ,  Katsuyoshi Shibuya ,  Tomonori Hino ,  Satoru Kijima ,  Masao Ikeda

IPC分类号： H01S500

CPC分类号： B82Y20/00 ,  H01L21/0237 ,  H01L21/02378 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/0265 ,  H01L33/0075 ,  H01S5/0207 ,  H01S5/0422 ,  H01S5/22 ,  H01S5/34333 ,  H01S2304/12

摘要： A semiconductor laser, a semiconductor device and a nitride series III-V group compound substrate capable of obtaining a crystal growth layer with less fluctuation of the crystallographic axes and capable of improving the device characteristics, as well as a manufacturing method therefor are provided. The semiconductor laser comprises, on one surface of a substrate used for growing, a plurality of spaced apart seed crystal layers and an n-side contact layer having a lateral growing region which is grown on the basis of the plurality of seed crystal layers. The seed crystal layer is formed in that a product of width w1 (unit: &mgr;m) at the boundary thereof relative to the n-side contact layer along the arranging direction A and a thickness t1 (unit: &mgr;m) along the direction of laminating the n-side contact layer is 15 or less. A semiconductor layer comprising a nitride series III-V group compound semiconductor is laminated on a substrate 11 comprising an n-type GaN. Protruded seed crystal portions are formed and a growth suppression layer having an opening corresponding to the seed crystal portion is disposed to the substrate. The semiconductor layer grows on the basis of the seed crystal portion and has a lateral growing region of low dislocation density.

摘要翻译： 提供能够获得晶体轴的波动较小并且能够提高器件特性的晶体生长层的半导体激光器，半导体器件和氮化物系III-V族化合物基片及其制造方法。 半导体激光器在用于生长的基板的一个表面上包括多个间隔开的晶种层和具有基于多个晶种层生长的侧向生长区域的n侧接触层。 晶种层形成为沿着排列方向A相对于n侧接触层的边界处的宽度w1（单位：毫姆）的乘积和层叠方向的厚度t1（单位：毫姆） n侧接触层为15以下。在包含n型GaN的基板11上层叠包含氮化物系III-V族化合物半导体的半导体层。 形成突出的晶种部分，并且将具有与晶种部分对应的开口的生长抑制层设置在基板上。 半导体层基于晶种部分生长，具有低位错密度的侧向生长区域。

公开(公告)号：US06524882B2

公开(公告)日：2003-02-25

申请号：US09824238

申请日：2001-04-03

申请人： Motonobu Takeya ,  Satoshi Taniguchi

发明人： Motonobu Takeya ,  Satoshi Taniguchi

IPC分类号： H01L2100

CPC分类号： C30B33/00 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/3228 ,  Y10S438/933

摘要： A nitride based III-V compound semiconductor doped with a p-type impurity is formed on a substrate made from sapphire. The substrate is then placed between a pair of RF electrodes, and a radio frequency field is applied between the RF electrodes. With this operation, electrons present in the compound semiconductor attack the bonding between the p-type impurity and hydrogen, to cut the bonding. The hydrogen atoms thus dissociated are released from the compound semiconductor, to thereby activate the p-type impurity. In this case, it is not required to heat the compound semiconductor by a heater or the like.

摘要翻译： 在由蓝宝石制成的基板上形成掺杂有p型杂质的氮化物III-V族化合物半导体。 然后将衬底放置在一对RF电极之间，并且在RF电极之间施加射频场。 通过该操作，存在于化合物半导体中的电子侵蚀p型杂质与氢之间的键合，从而切断接合。 由此解离的氢原子从化合物半导体释放，从而活化p型杂质。 在这种情况下，不需要通过加热器等来加热化合物半导体。

公开(公告)号：US06509579B2

公开(公告)日：2003-01-21

申请号：US09760959

申请日：2001-01-16

申请人： Motonobu Takeya ,  Katsunori Yanashima ,  Masao Ikeda ,  Takeharu Asano ,  Shinro Ikeda ,  Tomonori Hino ,  Katsuyoshi Shibuya

发明人： Motonobu Takeya ,  Katsunori Yanashima ,  Masao Ikeda ,  Takeharu Asano ,  Shinro Ikeda ,  Tomonori Hino ,  Katsuyoshi Shibuya

IPC分类号： H01L2906

CPC分类号： H01L21/02378 ,  H01L21/0242 ,  H01L21/02422 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/0265 ,  H01L33/007 ,  H01S5/32341 ,  H01S2304/12

摘要： To provide a semiconductor device capable of preventing the bowing of the substrate, and having a semiconductor layer of a III-V group compound of a nitride system with excellent crystallinity. The semiconductor layer of the III-V group compound of the nitride system whose thickness is equal to or less than 8 &mgr;m, is provided onto a substrate made of sapphire. This reduces the bowing of the substrate due to differences in a thermal expansion coefficient and a lattice constant between the substrate and the semiconductor layer of the III-V group compound of the nitride system. An n-side contact layer forming the semiconductor layer of the III-V group of the nitride system has partially a lateral growth region made by growing in a lateral direction from a crystalline part of a seed crystal layer. In the lateral growth region, dislocation density restricts low, therefore, regions corresponding to the lateral growth region of each layer formed onto the n-side contact layer has excellent crystallinity.

摘要翻译： 提供能够防止基板弯曲的半导体器件，并且具有具有优异结晶度的氮化物系的III-V族化合物的半导体层。氮化物体系的III-V族化合物的半导体层的厚度 等于或小于8μm，设置在由蓝宝石制成的基板上。 由于氮化物系III-V族化合物的基板与半导体层之间的热膨胀系数和晶格常数的差异，这减少了基板的弯曲。 形成氮化物体系的III-V族的半导体层的n侧接触层部分地是由晶种层的结晶部分沿横向生长而形成的横向生长区域。 在横向生长区域中，位错密度低，因此，与形成在n侧接触层上的各层的横向生长区域对应的区域具有优异的结晶性。