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    RECOVERY OF HYDROPHOBICITY OF LOW-K AND ULTRA LOW-K ORGANOSILICATE FILMS USED AS INTER METAL DIELECTRICS
    1.
    发明申请
    RECOVERY OF HYDROPHOBICITY OF LOW-K AND ULTRA LOW-K ORGANOSILICATE FILMS USED AS INTER METAL DIELECTRICS 失效
    作为金属电介质的低K和超低K有机硅膜的疏水性恢复

    公开(公告)号：US20070138640A1

    公开(公告)日：2007-06-21

    申请号：US11676447

    申请日：2007-02-19

    申请人： Nirupama Chakrapani ,  Matthew Colburn ,  Christops Dimitrakopculos ,  Dirk Pfeiffer ,  Sampath Purushothaman ,  Satyanarayana Nitta

    发明人： Nirupama Chakrapani ,  Matthew Colburn ,  Christops Dimitrakopculos ,  Dirk Pfeiffer ,  Sampath Purushothaman ,  Satyanarayana Nitta

    IPC分类号： H01L23/52 ,  H01L23/48

    CPC分类号： H01L21/76826 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/31058 ,  H01L21/76807 ,  H01L21/76814 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Often used to reduce the RC delay in integrated circuits are dielectric films of porous organosilicates which have a silica like backbone with alkyl or aryl groups (to add hydrophobicity to the materials and create free volume) attached directly to the Si atoms in the network. Si—R bonds rarely survive an exposure to plasmas or chemical treatments commonly used in processing; this is especially the case in materials with an open cell pore structure. When Si—R bonds are broken, the materials lose hydrophobicity, due to formation of hydrophilic silanols and low dielectric constant is compromised. A method by which the hydrophobicity of the materials is recovered using a novel class of silylation agents which may have the general formula (R2N)XSiR′Y where X and Y are integers from 1 to 3 and 3 to 1 respectively, and where R and R′ are selected from the group of hydrogen, alkyl, aryl, allyl and a vinyl moiety. Mechanical strength of porous organosilicates is also improved as a result of the silylation treatment.

    摘要翻译： 通常用于减少集成电路中的RC延迟的是多孔有机硅酸盐的介电膜，其具有二氧化硅像主链与烷基或芳基（以增加材料的疏水性并产生自由体积）直接附着在网络中的Si原子。 Si-R键在暴露于等离子体或通常用于加工的化学处理中很少存活; 这在具有开孔细孔结构的材料中尤其如此。 当Si-R键断裂时，材料由于形成亲水硅烷醇而损失疏水性，并且低介电常数受损。 使用新型甲硅烷基化剂回收材料的疏水性的方法，其可以具有通式（R 2 N 2）X SiR'Y 其中X和Y分别为1至3和3至1的整数，并且其中R和R'选自氢，烷基，芳基，烯丙基和乙烯基部分。 由于甲硅烷基化处理，多孔有机硅酸盐的机械强度也得到改善。

    Recovery of hydrophobicity of low-k and ultra low-k organosilicate films used as inter metal dielectrics
    2.
    发明申请
    Recovery of hydrophobicity of low-k and ultra low-k organosilicate films used as inter metal dielectrics 失效
    用作金属间电介质的低k和超低k有机硅酸盐膜的疏水性的恢复

    公开(公告)号：US20050106762A1

    公开(公告)日：2005-05-19

    申请号：US10853771

    申请日：2004-05-25

    申请人： Nirupama Chakrapani ,  Matthew Colburn ,  Christos Dimitrakopoulos ,  Dirk Pfeiffer ,  Sampath Purushothaman ,  Satyanarayana Nitta

    发明人： Nirupama Chakrapani ,  Matthew Colburn ,  Christos Dimitrakopoulos ,  Dirk Pfeiffer ,  Sampath Purushothaman ,  Satyanarayana Nitta

    IPC分类号： H01L21/00 ,  H01L21/3105 ,  H01L21/312 ,  H01L21/768

    CPC分类号： H01L21/76826 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/31058 ,  H01L21/76807 ,  H01L21/76814 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Often used to reduce the RC delay in integrated circuits are dielectric films of porous organosilicates which have a silica like backbone with alkyl or aryl groups (to add hydrophobicity to the materials and create free volume) attached directly to the Si atoms in the network. Si—R bonds rarely survive an exposure to plasmas or chemical treatments commonly used in processing; this is especially the case in materials with an open cell pore structure. When Si—R bonds are broken, the materials lose hydrophobicity, due to formation of hydrophilic silanols and low dielectric constant is compromised. A method by which the hydrophobicity of the materials is recovered using a novel class of silylation agents which may have the general formula (R2N)XSiR′Y where X and Y are integers from 1 to 3 and 3 to 1 respectively, and where R and R′ are selected from the group of hydrogen, alkyl, aryl, allyl and a vinyl moiety. Mechanical strength of porous organosilicates is also improved as a result of the silylation treatment.

    摘要翻译： 通常用于减少集成电路中的RC延迟的是多孔有机硅酸盐的介电膜，其具有二氧化硅像主链与烷基或芳基（以增加材料的疏水性并产生自由体积）直接连接到网络中的Si原子。 Si-R键在暴露于等离子体或通常用于加工的化学处理中很少存活; 这在具有开孔细孔结构的材料中尤其如此。 当Si-R键断裂时，材料由于形成亲水硅烷醇而损失疏水性，并且低介电常数受损。 使用新型甲硅烷基化剂回收材料的疏水性的方法，其可以具有通式（R 2 N 2）X SiR'Y 其中X和Y分别为1至3和3至1的整数，并且其中R和R'选自氢，烷基，芳基，烯丙基和乙烯基部分。 由于甲硅烷基化处理，多孔有机硅酸盐的机械强度也得到改善。

    RECOVERY OF HYDROPHOBICITY OF LOW-K AND ULTRA LOW-K ORGANOSILICATE FILMS USED AS INTER METAL DIELECTRICS
    3.
    发明申请
    RECOVERY OF HYDROPHOBICITY OF LOW-K AND ULTRA LOW-K ORGANOSILICATE FILMS USED AS INTER METAL DIELECTRICS 审中-公开
    作为金属电介质的低K和超低K有机硅膜的疏水性恢复

    公开(公告)号：US20110003402A1

    公开(公告)日：2011-01-06

    申请号：US12749213

    申请日：2010-03-29

    申请人： Nirupama Chakrapani ,  Matthew E. Colburn ,  Christos D. Dimitrakopoulos ,  Dirk Pfeiffer ,  Sampath Purushothaman ,  Satyanarayana V. Nitta

    发明人： Nirupama Chakrapani ,  Matthew E. Colburn ,  Christos D. Dimitrakopoulos ,  Dirk Pfeiffer ,  Sampath Purushothaman ,  Satyanarayana V. Nitta

    IPC分类号： H01L21/30

    CPC分类号： H01L21/76826 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/31058 ,  H01L21/76807 ,  H01L21/76814 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Often used to reduce the RC delay in integrated circuits are dielectric films of porous organosilicates which have a silica like backbone with alkyl or aryl groups (to add hydrophobicity to the materials and create free volume) attached directly to the Si atoms in the network. Si—R bonds rarely survive an exposure to plasmas or chemical treatments commonly used in processing; this is especially the case in materials with an open cell pore structure. When Si—R bonds are broken, the materials lose hydrophobicity, due to formation of hydrophilic silanols and low dielectric constant is compromised. A method by which the hydrophobicity of the materials is recovered using a novel class of silylation agents which may have the general formula (R2N)XSiR′Y where X and Y are integers from 1 to 3 and 3 to 1 respectively, and where R and R′ are selected from the group of hydrogen, alkyl, aryl, allyl and a vinyl moiety. Mechanical strength of porous organosilicates is also improved as a result of the silylation treatment.

    摘要翻译： 通常用于减少集成电路中的RC延迟的是多孔有机硅酸盐的介电膜，其具有二氧化硅像主链与烷基或芳基（以增加材料的疏水性并产生自由体积）直接连接到网络中的Si原子。 Si-R键在暴露于等离子体或通常用于加工的化学处理中很少存活; 这在具有开孔细孔结构的材料中尤其如此。 当Si-R键断裂时，材料由于形成亲水硅烷醇而损失疏水性，并且低介电常数受损。 使用新型甲硅烷基化剂回收材料的疏水性的方法，其可以具有通式（R2N）XSiR'Y，其中X和Y分别为1至3和3至1的整数，并且其中R和 R'选自氢，烷基，芳基，烯丙基和乙烯基部分。 由于甲硅烷基化处理，多孔有机硅酸盐的机械强度也得到改善。

    Recovery of hydrophobicity of low-k and ultra low-k organosilicate films used as inter metal dielectrics
    4.
    发明授权
    Recovery of hydrophobicity of low-k and ultra low-k organosilicate films used as inter metal dielectrics 失效
    用作金属间电介质的低k和超低k有机硅酸盐膜的疏水性的恢复

    公开(公告)号：US07687913B2

    公开(公告)日：2010-03-30

    申请号：US11676447

    申请日：2007-02-19

    申请人： Nirupama Chakrapani ,  Matthew E. Colburn ,  Christos D. Dimitrakopoulos ,  Dirk Pfeiffer ,  Sampath Purushothaman ,  Satyanarayana V. Nitta

    发明人： Nirupama Chakrapani ,  Matthew E. Colburn ,  Christos D. Dimitrakopoulos ,  Dirk Pfeiffer ,  Sampath Purushothaman ,  Satyanarayana V. Nitta

    IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

    CPC分类号： H01L21/76826 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/31058 ,  H01L21/76807 ,  H01L21/76814 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Often used to reduce the RC delay in integrated circuits are dielectric films of porous organosilicates which have a silica like backbone with alkyl or aryl groups (to add hydrophobicity to the materials and create free volume) attached directly to the Si atoms in the network. Si—R bonds rarely survive an exposure to plasmas or chemical treatments commonly used in processing; this is especially the case in materials with an open cell pore structure. When Si—R bonds are broken, the materials lose hydrophobicity, due to formation of hydrophilic silanols and low dielectric constant is compromised. A method by which the hydrophobicity of the materials is recovered using a novel class of silylation agents which may have the general formula (R2N)XSiR′Y where X and Y are integers from 1 to 3 and 3 to 1 respectively, and where R and R′ are selected from the group of hydrogen, alkyl, aryl, allyl and a vinyl moiety. Mechanical strength of porous organosilicates is also improved as a result of the silylation treatment.

    摘要翻译： 通常用于减少集成电路中的RC延迟的是多孔有机硅酸盐的介电膜，其具有二氧化硅像主链与烷基或芳基（以增加材料的疏水性并产生自由体积）直接附着在网络中的Si原子。 Si-R键在暴露于等离子体或通常用于加工的化学处理中很少存活; 这在具有开孔细孔结构的材料中尤其如此。 当Si-R键断裂时，材料由于形成亲水硅烷醇而损失疏水性，并且低介电常数受损。 使用新型甲硅烷基化剂回收材料的疏水性的方法，其可以具有通式（R2N）XSiR'Y，其中X和Y分别为1至3和3至1的整数，并且其中R和 R'选自氢，烷基，芳基，烯丙基和乙烯基部分。 由于甲硅烷基化处理，多孔有机硅酸盐的机械强度也得到改善。

    Recovery of hydrophobicity of low-k and ultra low-k organosilicate films used as inter metal dielectrics
    5.
    发明授权
    Recovery of hydrophobicity of low-k and ultra low-k organosilicate films used as inter metal dielectrics 失效
    用作金属间电介质的低k和超低k有机硅酸盐膜的疏水性的恢复

    公开(公告)号：US07179758B2

    公开(公告)日：2007-02-20

    申请号：US10853771

    申请日：2004-05-25

    申请人： Nirupama Chakrapani ,  Matthew E. Colburn ,  Christos D. Dimitrakopoulos ,  Dirk Pfeiffer ,  Sampath Purushothaman ,  Satyanarayana V. Nitta

    发明人： Nirupama Chakrapani ,  Matthew E. Colburn ,  Christos D. Dimitrakopoulos ,  Dirk Pfeiffer ,  Sampath Purushothaman ,  Satyanarayana V. Nitta

    IPC分类号： H01L21/311 ,  H01L21/469 ,  H01L21/31 ,  H01L21/461 ,  H01L21/302

    CPC分类号： H01L21/76826 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/31058 ,  H01L21/76807 ,  H01L21/76814 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Often used to reduce the RC delay in integrated circuits are dielectric films of porous organosilicates which have a silica like backbone with alkyl or aryl groups (to add hydrophobicity to the materials and create free volume) attached directly to the Si atoms in the network. Si—R bonds rarely survive an exposure to plasmas or chemical treatments commonly used in processing; this is especially the case in materials with an open cell pore structure. When Si—R bonds are broken, the materials lose hydrophobicity, due to formation of hydrophilic silanols and low dielectric constant is compromised. A method by which the hydrophobicity of the materials is recovered using a novel class of silylation agents which may have the general formula (R2N)XSiR′Y where X and Y are integers from 1 to 3 and 3 to 1 respectively, and where R and R′ are selected from the group of hydrogen, alkyl, aryl, allyl and a vinyl moiety. Mechanical strength of porous organosilicates is also improved as a result of the silylation treatment.

    摘要翻译： 通常用于减少集成电路中的RC延迟的是多孔有机硅酸盐的介电膜，其具有二氧化硅像主链与烷基或芳基（以增加材料的疏水性并产生自由体积）直接连接到网络中的Si原子。 Si-R键在暴露于等离子体或通常用于加工的化学处理中很少存活; 这在具有开孔细孔结构的材料中尤其如此。 当Si-R键断裂时，材料由于形成亲水硅烷醇而损失疏水性，并且低介电常数受损。 使用新型甲硅烷基化剂回收材料的疏水性的方法，其可以具有通式（R 2 N 2）X SiR'Y 其中X和Y分别为1至3和3至1的整数，并且其中R和R'选自氢，烷基，芳基，烯丙基和乙烯基部分。 由于甲硅烷基化处理，多孔有机硅酸盐的机械强度也得到改善。