公开(公告)号：US07518230B2

公开(公告)日：2009-04-14

申请号：US11637945

申请日：2006-12-13

申请人： Osamu Miyata ,  Tadahiro Morifuji

发明人： Osamu Miyata ,  Tadahiro Morifuji

IPC分类号： H01L23/04 ,  H01L23/34

CPC分类号： H01L23/50 ,  H01L23/49575 ,  H01L23/5286 ,  H01L23/62 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/16145 ,  H01L2224/32145 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49171 ,  H01L2224/73204 ,  H01L2225/06513 ,  H01L2924/00014 ,  H01L2924/01079 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor chip according to the present invention is a semiconductor chip having a circuit forming region, in which an internal circuit including a function element is formed, on the middle portion of the surface thereof, and having the surface thereof opposed to and joined to the surface of a solid-state device. The semiconductor chips includes: a plurality of bumps, formed so as to be ridged on the surface and brought into contact with the surface of the solid-state device, for electrically connecting the internal circuit with the solid-state device; power source wiring, formed in the surrounding region of the circuit forming region, to which power source voltage is supplied; ground wiring, formed in the surrounding region of the circuit forming region, which is grounded to ground potential; and protection elements, formed between the power source wiring and the ground wiring, which electrically intervenes between the bumps and the power source wiring and between the bumps and the ground wiring, respectively.

摘要翻译： 根据本发明的半导体芯片是具有电路形成区域的半导体芯片，其中在其表面的中间部分上形成有包括功能元件的内部电路，并且其表面相对并连接到 固态器件的表面。 半导体芯片包括：多个凸块，形成为在表面上脊状并与固态器件的表面接触，用于将内部电路与固态器件电连接; 形成在电路形成区域的周围区域的电源布线，供给电源电压; 接地线，形成在电路形成区域的周围区域，其接地到地电位; 以及形成在电源布线和接地布线之间的保护元件，其分别电插入凸块和电源布线之间以及凸块和接地布线之间。

公开(公告)号：US08653657B2

公开(公告)日：2014-02-18

申请号：US11990875

申请日：2006-08-18

申请人： Osamu Miyata ,  Tadahiro Morifuji

发明人： Osamu Miyata ,  Tadahiro Morifuji

IPC分类号： H01L29/40

CPC分类号： H01L22/34 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/17 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/81 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/05554 ,  H01L2224/0603 ,  H01L2224/06102 ,  H01L2224/10135 ,  H01L2224/10165 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/1403 ,  H01L2224/16145 ,  H01L2224/32245 ,  H01L2224/48247 ,  H01L2224/49175 ,  H01L2224/49431 ,  H01L2224/73265 ,  H01L2224/81136 ,  H01L2224/81141 ,  H01L2224/81193 ,  H01L2224/81801 ,  H01L2225/06593 ,  H01L2225/06596 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10162 ,  H01L2924/181 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： There are provided a semiconductor device capable of accurately determining whether a semiconductor chip is bonded to a solid-state device such as the other semiconductor chip parallelly with each other, a semiconductor chip used for the semiconductor device, and a method of manufacturing the semiconductor chip. The semiconductor chip includes a functional bump projected with a first projection amount from the surface of the semiconductor chip and electrically connecting the semiconductor chip to the solid-state device, and a connection confirmation bump projected with a second projection amount, which is smaller than the first projection amount, from the surface of the semiconductor chip and used for confirming the state of the electrical connection by the functional bump.

摘要翻译： 提供了能够准确地确定半导体芯片是否彼此平行地结合到诸如其他半导体芯片的固态器件的半导体器件的半导体器件，以及用于半导体器件的半导体芯片的制造方法 。 半导体芯片包括从半导体芯片的表面以第一投影量投影的功能性凸块，并且将半导体芯片电连接到固态器件，以及以第二投影量投影的连接确认凸块，其小于 第一突出量，从半导体芯片的表面，用于确认由功能凸块的电连接的状态。

公开(公告)号：US20090127705A1

公开(公告)日：2009-05-21

申请号：US11990875

申请日：2006-08-18

申请人： Osamu Miyata ,  Tadahiro Morifuji

发明人： Osamu Miyata ,  Tadahiro Morifuji

IPC分类号： H01L23/498 ,  H01L21/768

CPC分类号： H01L22/34 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/17 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/81 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/05554 ,  H01L2224/0603 ,  H01L2224/06102 ,  H01L2224/10135 ,  H01L2224/10165 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/1403 ,  H01L2224/16145 ,  H01L2224/32245 ,  H01L2224/48247 ,  H01L2224/49175 ,  H01L2224/49431 ,  H01L2224/73265 ,  H01L2224/81136 ,  H01L2224/81141 ,  H01L2224/81193 ,  H01L2224/81801 ,  H01L2225/06593 ,  H01L2225/06596 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10162 ,  H01L2924/181 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： There are provided a semiconductor device capable of accurately determining whether a semiconductor chip is bonded to a solid-state device such as the other semiconductor chip parallelly with each other, a semiconductor chip used for the semiconductor device, and a method of manufacturing the semiconductor chip. The semiconductor chip includes a functional bump projected with a first projection amount from the surface of the semiconductor chip and electrically connecting the semiconductor chip to the solid-state device, and a connection confirmation bump projected with a second projection amount, which is smaller than the first projection amount, from the surface of the semiconductor chip and used for confirming the state of the electrical connection by the functional bump.

摘要翻译： 提供了能够准确地确定半导体芯片是否彼此平行地结合到诸如其他半导体芯片的固态器件的半导体器件的半导体器件，以及用于半导体器件的半导体芯片的制造方法 。 半导体芯片包括从半导体芯片的表面以第一投影量投影的功能性凸块，并且将半导体芯片电连接到固态器件，以及以第二投影量投影的连接确认凸块，其小于 第一突出量，从半导体芯片的表面，用于确认由功能凸块的电连接的状态。

公开(公告)号：US07405485B2

公开(公告)日：2008-07-29

申请号：US10573772

申请日：2005-06-09

申请人： Kazumasa Tanida ,  Tadahiro Morifuji ,  Osamu Miyata

发明人： Kazumasa Tanida ,  Tadahiro Morifuji ,  Osamu Miyata

IPC分类号： H01L23/48

CPC分类号： H01L25/0657 ,  H01L23/3114 ,  H01L24/20 ,  H01L24/48 ,  H01L24/82 ,  H01L2224/04105 ,  H01L2224/05001 ,  H01L2224/05023 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05568 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05684 ,  H01L2224/12105 ,  H01L2224/16145 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/73209 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2225/06513 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/3511 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device provided with a first semiconductor chip having a first functional surface formed with a first functional element and a first rear surface, a second semiconductor chip having a second functional surface which is formed with a second functional element, the second functional surface having a region opposed to the first functional surface of the first semiconductor chip and a non-opposed region defined outside the opposed region, a connection member electrically connecting the first functional element and the second functional element, an insulation film continuously covering the non-opposed region of the second semiconductor chip and the first rear surface of the first semiconductor chip, a rewiring layer provided on a surface of the insulation film, a protective resin layer covering the rewiring layer, and an external connection terminal projecting from the rewiring layer through the protective resin layer.

摘要翻译： 一种具有第一半导体芯片的半导体器件，具有形成有第一功能元件和第一后表面的第一功能面，具有形成有第二功能元件的第二功能面的第二半导体芯片，所述第二功能面具有 与第一半导体芯片的第一功能表面相对的区域和限定在相对区域外部的非对置区域，将第一功能元件和第二功能元件电连接的连接构件，连续地覆盖第一功能元件的非对置区域的绝缘膜， 第二半导体芯片和第一半导体芯片的第一后表面，设置在绝缘膜的表面上的再布线层，覆盖重新布线层的保护树脂层和从再布线层穿过保护树脂突出的外部连接端子 层。

公开(公告)号：US20070145565A1

公开(公告)日：2007-06-28

申请号：US11637945

申请日：2006-12-13

申请人： Osamu Miyata ,  Tadahiro Morifuji

发明人： Osamu Miyata ,  Tadahiro Morifuji

IPC分类号： H01L23/48

CPC分类号： H01L23/50 ,  H01L23/49575 ,  H01L23/5286 ,  H01L23/62 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/16145 ,  H01L2224/32145 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49171 ,  H01L2224/73204 ,  H01L2225/06513 ,  H01L2924/00014 ,  H01L2924/01079 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor chip according to the present invention is a semiconductor chip having a circuit forming region, in which an internal circuit including a function element is formed, on the middle portion of the surface thereof, and having the surface thereof opposed to and joined to the surface of a solid-state device. The semiconductor chips includes: a plurality of bumps, formed so as to be ridged on the surface and brought into contact with the surface of the solid-state device, for electrically connecting the internal circuit with the solid-state device; power source wiring, formed in the surrounding region of the circuit forming region, to which power source voltage is supplied; ground wiring, formed in the surrounding region of the circuit forming region, which is grounded to ground potential; and protection elements, formed between the power source wiring and the ground wiring, which electrically intervenes between the bumps and the power source wiring and between the bumps and the ground wiring, respectively.

摘要翻译： 根据本发明的半导体芯片是具有电路形成区域的半导体芯片，其中在其表面的中间部分上形成有包括功能元件的内部电路，并且其表面相对并连接到 固态器件的表面。 半导体芯片包括：多个凸块，形成为在表面上脊状并与固态器件的表面接触，用于将内部电路与固态器件电连接; 形成在电路形成区域的周围区域的电源布线，供给电源电压; 接地线，形成在电路形成区域的周围区域，其接地到地电位; 以及形成在电源布线和接地布线之间的保护元件，其分别电插入凸块和电源布线之间以及凸块和接地布线之间。

公开(公告)号：US20060267186A1

公开(公告)日：2006-11-30

申请号：US10573772

申请日：2005-06-09

申请人： Kazumasa Tanida ,  Tadahiro Morifuji ,  Osamu Miyata

发明人： Kazumasa Tanida ,  Tadahiro Morifuji ,  Osamu Miyata

IPC分类号： H01L23/34

CPC分类号： H01L25/0657 ,  H01L23/3114 ,  H01L24/20 ,  H01L24/48 ,  H01L24/82 ,  H01L2224/04105 ,  H01L2224/05001 ,  H01L2224/05023 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05568 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05684 ,  H01L2224/12105 ,  H01L2224/16145 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/73209 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2225/06513 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/3511 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device provided with a first semiconductor chip having a first functional surface formed with a first functional element and a first rear surface, a second semiconductor chip having a second functional surface which is formed with a second functional element, the second functional surface having a region opposed to the first functional surface of the first semiconductor chip and a non-opposed region defined outside the opposed region, a connection member electrically connecting the first functional element and the second functional element, an insulation film continuously covering the non-opposed region of the second semiconductor chip and the first rear surface of the first semiconductor chip, a rewiring layer provided on a surface of the insulation film, a protective resin layer covering the rewiring layer, and an external connection terminal projecting from the rewiring layer through the protective resin layer.

摘要翻译： 一种具有第一半导体芯片的半导体器件，具有形成有第一功能元件和第一后表面的第一功能面，具有形成有第二功能元件的第二功能面的第二半导体芯片，所述第二功能面具有 与第一半导体芯片的第一功能表面相对的区域和限定在相对区域外部的非对置区域，将第一功能元件和第二功能元件电连接的连接构件，连续地覆盖第一功能元件的非对置区域的绝缘膜， 第二半导体芯片和第一半导体芯片的第一后表面，设置在绝缘膜的表面上的再布线层，覆盖重新布线层的保护树脂层和从再布线层穿过保护树脂突出的外部连接端子 层。

公开(公告)号：US6133637A

公开(公告)日：2000-10-17

申请号：US155134

申请日：1998-09-18

申请人： Junichi Hikita ,  Kazutaka Shibata ,  Tsunemori Yamaguchi ,  Tadahiro Morifuji ,  Osamu Miyata

发明人： Junichi Hikita ,  Kazutaka Shibata ,  Tsunemori Yamaguchi ,  Tadahiro Morifuji ,  Osamu Miyata

IPC分类号： G01P3/488 ,  H01L21/56 ,  H01L21/60 ,  H01L23/31 ,  H01L23/495 ,  H01L23/498 ,  H01L25/065 ,  H01L25/18 ,  H01L29/40

CPC分类号： H01L23/544 ,  G01P3/488 ,  H01L21/563 ,  H01L23/3135 ,  H01L23/49575 ,  H01L23/49816 ,  H01L23/49827 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/83 ,  H01L25/0657 ,  H01L25/18 ,  H01L2223/54426 ,  H01L2224/05554 ,  H01L2224/1147 ,  H01L2224/13016 ,  H01L2224/13144 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/29101 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/2939 ,  H01L2224/29444 ,  H01L2224/29455 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/49171 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/73207 ,  H01L2224/73265 ,  H01L2224/78281 ,  H01L2224/78301 ,  H01L2224/81136 ,  H01L2224/8114 ,  H01L2224/81193 ,  H01L2224/8121 ,  H01L2224/81815 ,  H01L2224/81903 ,  H01L2224/83101 ,  H01L2224/83104 ,  H01L2224/83136 ,  H01L2224/8319 ,  H01L2224/83851 ,  H01L2224/83856 ,  H01L2224/83907 ,  H01L2224/85181 ,  H01L2224/90 ,  H01L2224/92247 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06555 ,  H01L2225/06562 ,  H01L2225/06582 ,  H01L2225/06586 ,  H01L2225/06593 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/81 ,  H01L24/85 ,  H01L24/90 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01058 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/0781 ,  H01L2924/07811 ,  H01L2924/10253 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/18161

摘要： A semiconductor device includes first and second semiconductor chips. The first semiconductor chip is formed with a plurality of first electrodes on a surface thereof, while the second semiconductor chip is formed with a plurality of second electrodes on a surface thereof. These surfaces are positioned facing to each other, thereby connecting between the first electrode and the second electrode. The respective surfaces are formed with circuit elements. The circuit elements are covered by the first semiconductor chip and the second semiconductor chip The first semiconductor chip and the second semiconductor chip at their connecting portions are encapsulated by a synthetic resin that is excellent in moisture resistance. The first semiconductor chip and the second semiconductor chip are entirely packaged by a second synthetic resin that is excellent in adhesibility.

摘要翻译： PCT No.PCT / JP98 / 00281 Sec。 371日期：1998年9月18日 102（e）1998年9月18日PCT PCT。1998年1月22日PCT公布。 出版物WO98 / 33217 日期：1998年7月30日半导体器件包括第一和第二半导体芯片。 第一半导体芯片在其表面上形成有多个第一电极，而第二半导体芯片在其表面上形成有多个第二电极。 这些表面被定位成彼此面对，由此连接在第一电极和第二电极之间。 各个表面形成有电路元件。 电路元件由第一半导体芯片和第二半导体芯片覆盖。第一半导体芯片和第二半导体芯片在其连接部分由耐湿性优异的合成树脂封装。 第一半导体芯片和第二半导体芯片由粘合性优异的第二合成树脂完全包装。

公开(公告)号：US06458609B1

公开(公告)日：2002-10-01

申请号：US09612480

申请日：2000-07-07

申请人： Junichi Hikita ,  Kazutaka Shibata ,  Tsunemori Yamaguchi ,  Tadahiro Morifuji ,  Osamu Miyata

发明人： Junichi Hikita ,  Kazutaka Shibata ,  Tsunemori Yamaguchi ,  Tadahiro Morifuji ,  Osamu Miyata

IPC分类号： H01L2100

CPC分类号： H01L23/544 ,  G01P3/488 ,  H01L21/563 ,  H01L23/3135 ,  H01L23/49575 ,  H01L23/49816 ,  H01L23/49827 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/85 ,  H01L24/90 ,  H01L25/0657 ,  H01L25/18 ,  H01L2223/54426 ,  H01L2224/05554 ,  H01L2224/1147 ,  H01L2224/13016 ,  H01L2224/13144 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/29101 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/2939 ,  H01L2224/29444 ,  H01L2224/29455 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/49171 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/73207 ,  H01L2224/73265 ,  H01L2224/78281 ,  H01L2224/78301 ,  H01L2224/81136 ,  H01L2224/8114 ,  H01L2224/81193 ,  H01L2224/8121 ,  H01L2224/81815 ,  H01L2224/81903 ,  H01L2224/83101 ,  H01L2224/83104 ,  H01L2224/83136 ,  H01L2224/8319 ,  H01L2224/83851 ,  H01L2224/83856 ,  H01L2224/83907 ,  H01L2224/85181 ,  H01L2224/90 ,  H01L2224/92247 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06555 ,  H01L2225/06562 ,  H01L2225/06582 ,  H01L2225/06586 ,  H01L2225/06593 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01058 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/0781 ,  H01L2924/07811 ,  H01L2924/10162 ,  H01L2924/10253 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/18161 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device includes first and second semiconductor chips. The first semiconductor chip is formed with a plurality of first electrodes on a surface thereof, while the second semiconductor chip is formed with a plurality of second electrodes on a surface thereof. These surfaces are positioned facing to each other, thereby connecting between the first electrode and the second electrode. The respective surfaces are formed with circuit elements. The circuit elements are covered by the first semiconductor chip and the second semiconductor chip The first semiconductor chip and the second semiconductor chip at their connecting portions are encapsulated by a synthetic resin that is excellent in moisture resistance. The first semiconductor chip and the second semiconductor chip are entirely packaged by a second synthetic resin that is excellent in adhesibility.

摘要翻译： 半导体器件包括第一和第二半导体芯片。 第一半导体芯片在其表面上形成有多个第一电极，而第二半导体芯片在其表面上形成有多个第二电极。 这些表面被定位成彼此面对，由此连接在第一电极和第二电极之间。 各个表面形成有电路元件。 电路元件由第一半导体芯片和第二半导体芯片覆盖。第一半导体芯片和第二半导体芯片在其连接部分由耐湿性优异的合成树脂封装。 第一半导体芯片和第二半导体芯片由粘合性优异的第二合成树脂完全包装。

公开(公告)号：US08664779B2

公开(公告)日：2014-03-04

申请号：US13441019

申请日：2012-04-06

申请人： Masaki Kasai ,  Osamu Miyata

发明人： Masaki Kasai ,  Osamu Miyata

IPC分类号： H01L23/29

CPC分类号： H01L23/49816 ,  H01L23/3114 ,  H01L23/3171 ,  H01L23/3735 ,  H01L23/544 ,  H01L2223/54406 ,  H01L2223/5448 ,  H01L2224/16 ,  H01L2924/01004

摘要： Disclosed are a semiconductor device wherein warping of a semiconductor chip due to a sudden temperature change can be prevented without increasing the thickness, and a semiconductor device assembly. The semiconductor device comprises a semiconductor chip, a front side resin layer formed on the front surface of the semiconductor chip by using a first resin material, and a back side resin layer formed on the back surface of the semiconductor chip by using a second resin material having a higher thermal expansion coefficient than the first resin material. The back side resin layer is formed thinner than the front side resin layer.

公开(公告)号：US08405227B2

公开(公告)日：2013-03-26

申请号：US10594561

申请日：2005-07-21

申请人： Kazumasa Tanida ,  Osamu Miyata

发明人： Kazumasa Tanida ,  Osamu Miyata

IPC分类号： H01L23/495 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L24/16 ,  H01L21/563 ,  H01L23/3142 ,  H01L23/3157 ,  H01L23/3185 ,  H01L23/49811 ,  H01L23/49816 ,  H01L23/49838 ,  H01L23/52 ,  H01L23/562 ,  H01L24/01 ,  H01L24/17 ,  H01L24/28 ,  H01L24/32 ,  H01L24/73 ,  H01L24/75 ,  H01L24/81 ,  H01L24/83 ,  H01L51/5246 ,  H01L2224/01 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/26175 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/75252 ,  H01L2224/81191 ,  H01L2224/81815 ,  H01L2224/83102 ,  H01L2224/92125 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01033 ,  H01L2924/01075 ,  H01L2924/14 ,  H01L2924/153 ,  H01L2924/183 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： A semiconductor device (1,21) includes a solid state device (2,22), a semiconductor chip (3) that has a functional surface (3a) on which a functional element (4) is formed and that is bonded on a surface of the solid state device with the functional surface thereof facing the surface of the solid state device and while maintaining a predetermined distance between the functional surface thereof and the surface of the solid state device, an insulating film (6) that is provided on the surface (2a, 22a) of the solid state device facing the semiconductor chip and that has an opening (6a) greater in size than the semiconductor chip when the surface of the solid state device facing the semiconductor chip is vertically viewed down in plane, and a sealing layer (7) that seals a space between the solid state device and the semiconductor chip.