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37 条记录 (耗时 0.023 秒)

    Ion beam coating apparatus
    1.
    发明授权
    Ion beam coating apparatus 失效
    离子束涂装置

    公开(公告)号：US4440108A

    公开(公告)日：1984-04-03

    申请号：US423454

    申请日：1982-09-24

    申请人： Roger G. Little ,  Stanley R. Shanfield

    发明人： Roger G. Little ,  Stanley R. Shanfield

    IPC分类号： C04B35/5831 ,  C23C16/34 ,  C23C16/509 ,  H01J37/08 ,  H01J37/32 ,  C23C13/08

    CPC分类号： H01J37/32431 ,  C04B35/5831 ,  C23C16/342 ,  C23C16/509 ,  H01J37/08

    摘要： A coating apparatus and method for coating industrial cutting and turning tools of any desired shape and configuration and the like significantly to improve the tools' working properties. The coating is formed of cubic boron nitride, with a preferred thickness not exceeding ten microns. The coating apparatus includes an rf excited plasma source chamber having a gas feed ring for ionizing a gas admitted into the chamber via the ring. The preferred feed gas is a borazine and benzene vapor mixture. A coating chamber is mounted adjacent to and contiguous with the plasma source chamber via a neck portion. The coating chamber includes a vacuum interlock to permit the entry and removal of a tool transport. At least one vacuum pump is operatively connected to the chamber. Preferably, a plurality of permanent magnets and electron supply filaments are arranged circumferentially about the plasma source chamber. Preferably, the tool transport is rotatable during coating. Preferably, the apparatus is microprocessor controlled.

    摘要翻译： 一种涂覆设备和方法，用于显着地涂覆任何所需形状和构造等的工业切割和车刀，以改善工具的工作性能。 涂层由立方氮化硼形成，优选厚度不超过10微米。 涂覆装置包括具有气体进料环的rf激发等离子体源室，该气体供给环用于经由环离子化进入该室的气体。 优选的进料气体是环硼氮烷和苯蒸气混合物。 涂覆室经由颈部部分与等离子体源室相邻并邻接地安装。 涂覆室包括真空互锁以允许进入和移除工具输送。 至少一个真空泵可操作地连接到腔室。 优选地，围绕等离子体源室周向地布置多个永磁体和电子供应细丝。 优选地，刀具输送在涂覆期间是可旋转的。 优选地，该装置是微处理器控制的。

    Coating method
    2.
    发明授权
    Coating method 失效
    涂布方法

    公开(公告)号：US4526673A

    公开(公告)日：1985-07-02

    申请号：US563096

    申请日：1983-12-19

    申请人： Roger G. Little ,  Stanley R. Shanfield

    发明人： Roger G. Little ,  Stanley R. Shanfield

    IPC分类号： C04B35/5831 ,  C23C16/34 ,  C23C16/509 ,  H01J37/08 ,  H01J37/32 ,  C23C15/00

    CPC分类号： H01J37/32431 ,  C04B35/5831 ,  C23C16/342 ,  C23C16/509 ,  H01J37/08

    摘要： A coating apparatus and method for coating industrial cutting and turning tools of any desired shape and configuration and the like significantly to improve the tools' working properties. The coating is formed of cubic boron nitride, with a preferred thickness not exceeding ten microns.The coating apparatus includes an rf excited plasma source chamber having a gas feed ring for ionizing a gas admitted into the chamber via the ring. The preferred feedgas is a borazine and benzene vapor mixture. A coating chamber is mounted adjacent to and contiguous with the plasma source chamber via a neck portion. The coating chamber includes a vacuum interlock to permit the entry and removal of a tool transport. At least one vacuum pump is operatively connected to the chamber. Preferably, a plurality of permanent magnets and electron supply filaments are arranged circumferentially about the plasma source chamber. Preferably, the tool transport is rotatable during coating. Preferably, the apparatus is microprocessor controlled.

    摘要翻译： 一种涂覆设备和方法，用于显着地涂覆任何所需形状和构造等的工业切割和车刀，以改善工具的工作性能。 涂层由立方氮化硼形成，优选厚度不超过10微米。 涂覆装置包括具有气体进料环的射频激发等离子体源室，该气体供给环用于经由环离子化进入腔室的气体。 优选的原料气是环硼氮烷和苯蒸气混合物。 涂覆室经由颈部部分与等离子体源室相邻并邻接地安装。 涂覆室包括真空互锁以允许进入和移除工具输送。 至少一个真空泵可操作地连接到腔室。 优选地，围绕等离子体源室周向地布置多个永磁体和电子供应细丝。 优选地，刀具输送在涂覆期间是可旋转的。 优选地，该装置是微处理器控制的。

    NANOPHOTOVOLTAIC DEVICES
    4.
    发明申请
    NANOPHOTOVOLTAIC DEVICES 有权
    NANOPHOTOVOLTAIC设备

    公开(公告)号：US20090165852A1

    公开(公告)日：2009-07-02

    申请号：US12388895

    申请日：2009-02-19

    申请人： Steven J. Wojtczuk ,  James G. Moe ,  Roger G. Little

    发明人： Steven J. Wojtczuk ,  James G. Moe ,  Roger G. Little

    IPC分类号： H01L31/0224 ,  H01L31/0216 ,  H01L31/06 ,  H01L31/028

    CPC分类号： H01L31/07 ,  B82Y30/00 ,  H01L31/035281 ,  H01L31/18 ,  Y02E10/50

    摘要： The present invention provides nanophotovoltaic devices having sizes in a range of about 50 nm to about 5 microns, and method of their fabrication. In some embodiments, the nanophotovoltaic device includes a semiconductor core, e.g., formed of silicon, sandwiched between two metallic layers, one of which forms a Schottky barrier junction with the semiconductor core and the other forms an ohmic contact therewith. In other embodiment, the nanophotovoltaic device includes a semiconductor core comprising a p-n junction that is sandwiched between two metallic layers forming ohmic contacts with the core.

    摘要翻译： 本发明提供尺寸在约50nm至约5微米范围内的纳米光伏器件及其制造方法。 在一些实施例中，纳米光伏器件包括夹在两个金属层之间的例如由硅形成的半导体芯，其中一个与半导体芯形成肖特基势垒结，另一个与其形成欧姆接触。 在另一个实施例中，纳米光伏器件包括半导体芯，该半导体芯包括夹在与芯之间形成欧姆接触的两个金属层之间的p-n结。

    Plasma ion deposition process
    6.
    发明授权
    Plasma ion deposition process 失效
    等离子体离子沉积工艺

    公开(公告)号：US4443488A

    公开(公告)日：1984-04-17

    申请号：US312712

    申请日：1981-10-19

    申请人： Roger G. Little ,  Robert G. Wolfson ,  Stanley J. Solomon

    发明人： Roger G. Little ,  Robert G. Wolfson ,  Stanley J. Solomon

    IPC分类号： C23C16/503 ,  C30B25/10 ,  H01L21/205 ,  B05D3/06

    CPC分类号： C23C16/503 ,  C30B25/105 ,  H01L21/02422 ,  H01L21/02425 ,  H01L21/02532 ,  H01L21/0262

    摘要： A plasma ion deposition process of large-grain, thin semiconductor films directly on low-cost amorphous substrates comprising ionizing a semiconductor-based gaseous compound in a chamber by an electron-supported large volume, low pressure, high temperature plasma. The semiconductor ions are extracted from the compound and are deposited on the substrate. Preferably, the deposition is effected first at a slow deposition rate, followed by a higher deposition rate. The deposited ions are permitted to coalesce into lattice clusters, which clusters are grown, by further deposition, into a large-grain, thin semiconductor film on the substrate. Preferably, the semiconductor-based gaseous compound includes silane gas with dopant atom source gases.

    摘要翻译： 直接在低成本非晶衬底上的大颗粒，薄半导体膜的等离子体离子沉积工艺，其包括通过电子支撑的大体积，低压，高温等离子体在腔室中电离半导体基气态化合物。 从化合物中提取半导体离子并沉积在基底上。 优选地，沉积首先以缓慢的沉积速率进行，随后是更高的沉积速率。 允许沉积的离子聚结成晶格簇，通过进一步沉积将簇生长成基底上的大颗粒，薄的半导体膜。 优选地，基于半导体的气态化合物包括具有掺杂剂原子源气体的硅烷气体。

    SURFACE ACTIVATED BIOCHIP
    7.
    发明申请
    SURFACE ACTIVATED BIOCHIP 有权
    表面活性生物

    公开(公告)号：US20100004144A1

    公开(公告)日：2010-01-07

    申请号：US10120974

    申请日：2002-04-11

    申请人： Roger G. Little

    发明人： Roger G. Little

    IPC分类号： C40B40/08 ,  C40B40/10 ,  C40B40/06

    CPC分类号： B82Y30/00 ,  B01J19/0046 ,  B01J2219/00445 ,  B01J2219/00529 ,  B01J2219/00531 ,  B01J2219/00576 ,  B01J2219/00596 ,  B01J2219/00605 ,  B01J2219/00608 ,  B01J2219/0061 ,  B01J2219/00612 ,  B01J2219/00619 ,  B01J2219/00621 ,  B01J2219/00632 ,  B01J2219/00637 ,  B01J2219/00659 ,  B01J2219/00677 ,  B01J2219/00722 ,  C40B40/06 ,  C40B60/14

    摘要： The present invention provides substrates having a plurality of micro-locations on its surface. Each micro-location has an effective dose of an ion beam treatment such that the plurality of the micro-locations exhibit an affinity to a compound that is different from the affinity of the remainder of the substrate surface to that compound. The substrates of the invention can be utilized to form microarrays of biological molecules, such as oligonucleotides or peptides. Such microarrays can find a variety of applications. For example, they can be employed in large scale hybridization assays in many genetic applications, such as mapping of genomes, monitoring of gene expression, DNA sequencing, genetic diagnosis, and genotyping of organisms.

    摘要翻译： 本发明提供了在其表面上具有多个微位置的基板。 每个微位置具有有效剂量的离子束处理，使得多个微位置显示出与不同于该化合物的其余底物表面的亲和性的化合物的亲和力。 本发明的底物可用于形成生物分子的微阵列，例如寡核苷酸或肽。 这样的微阵列可以找到各种应用。 例如，它们可以用于许多遗传应用中的大规模杂交测定，例如基因组的绘制，基因表达的监测，DNA测序，遗传诊断和生物体的基因分型。

    Therapeutic uses of bactericidal/permeability-increasing protein dimer products
    8.
    发明授权
    Therapeutic uses of bactericidal/permeability-increasing protein dimer products 失效
    杀菌/增加蛋白质二聚体产品的治疗用途

    公开(公告)号：US5856302A

    公开(公告)日：1999-01-05

    申请号：US704504

    申请日：1996-12-16

    申请人： William Steve Ammons ,  Roger G. Little

    发明人： William Steve Ammons ,  Roger G. Little

    IPC分类号： C12N15/09 ,  A61K38/00 ,  A61P29/00 ,  A61P31/04 ,  A61P35/00 ,  C07K14/435 ,  C07K14/47 ,  C07K19/00 ,  C12P21/00 ,  A61K38/17

    CPC分类号： C07K14/4742 ,  A61K38/00

    摘要： Improved therapeutic compositions, methods and uses of bactericidal/permeability-increasing protein (BPI) products involve use of dimeric forms of BPI protein product monomers characterized by enhanced in vivo biological activity. Preferred formulations include 50 percent or more by weight dimeric product and preferred therapeutic uses include endotoxin neutralization and heparin neutralization.

    摘要翻译： PCT No.PCT / US95 / 03125 Sec。 371日期1996年12月16日第 102（e）日期1996年12月16日PCT 1995年3月13日PCT公布。 WO95 / 24209 PCT公开号 日期1995年9月14日改进的杀菌/渗透性增加蛋白质（BPI）产品的治疗组合物，方法和用途涉及使用以增强体内生物活性为特征的BPI蛋白质产物单体的二聚体形式。 优选的制剂包括50重量％或更多的二聚产物，优选的治疗用途包括内毒素中和和肝素中和。

    Process of making thin film high efficiency solar cells
    9.
    发明授权
    Process of making thin film high efficiency solar cells 失效
    制造薄膜高效太阳能电池的工艺

    公开(公告)号：US4392297A

    公开(公告)日：1983-07-12

    申请号：US390172

    申请日：1982-06-21

    申请人： Roger G. Little

    发明人： Roger G. Little

    IPC分类号： H01L31/0693 ,  H01L31/18

    CPC分类号： H01L31/0693 ,  H01L31/18 ,  H01L31/184 ,  Y02E10/544 ,  Y02P70/521 ,  Y10S438/933

    摘要： Process of making thin film materials for high efficiency solar cells on low-cost silicon substrates. The process comprises forming a low-cost silicon substrate, forming a graded transition region on the substrate and epitaxially growing a thin gallium arsenide film on the graded transition region. The process further includes doping the thin gallium arsenide film and forming a junction therein. The graded transition region preferably is a zone refined mixture of silicon and germanium characterized by a higher percentage of germanium at the surface of the region than adjacent the substrate. The process also includes the formation of homojunctions in thin gallium arsenide films.Solar cells made from the materials manufactured according to the process are characterized by a high conversion efficiency, improved stability and relatively low unit cost.

    摘要翻译： 在低成本硅基板上制造用于高效太阳能电池的薄膜材料的工艺。 该方法包括形成低成本的硅衬底，在衬底上形成渐变过渡区域，并在渐变过渡区域外延生长薄的砷化镓薄膜。 该方法还包括掺杂薄砷化镓膜并在其中形成结。 分级过渡区域优选是硅和锗的区域精炼混合物，其特征在于在该区域的表面处的锗的比例高于邻近衬底。 该方法还包括在薄的砷化镓薄膜中形成均相。 由根据该方法制造的材料制成的太阳能电池的特征在于转换效率高，稳定性提高和单位成本相对较低。

    Single crystal processes and products
    10.
    发明授权
    Single crystal processes and products 失效
    单晶工艺和产品

    公开(公告)号：US4350561A

    公开(公告)日：1982-09-21

    申请号：US150331

    申请日：1980-05-16

    申请人： Roger G. Little

    发明人： Roger G. Little

    IPC分类号： C30B11/00 ,  H01L31/0236 ,  B01J17/04

    CPC分类号： H01L31/0236 ,  C30B11/00 ,  C30B11/002 ,  C30B11/005 ,  C30B29/60 ,  Y02E10/50 ,  Y10S117/904 ,  Y10S117/905 ,  Y10S117/913 ,  Y10S148/135 ,  Y10S438/964

    摘要： The surface of a starting single crystal of specified composition (e.g., silicon) is etched to produce a relief texture; a stratum of release composition (e.g., aluminum) is deposited on the relief texture to acquire a replica texture and is released to provide a replica master; a replica stratum of the specified composition in the amorphous or polycrystalline state is deposited on the replica master in order to acquire the original relief texture. It has been found that, when the replica stratum is recrystallized, it assumes a replica single crystal structure corresponding to the starting single crystal structure.

    摘要翻译： 蚀刻特定组成的起始单晶（例如硅）的表面以产生浮雕纹理; 释放组合物层（例如铝）沉积在浮雕纹理上以获得复制纹理并被释放以提供复制母版; 以非晶态或多晶状态的特定组成的复制层沉积在复制主体上以获得原始浮雕纹理。 已经发现，当复制层重结晶时，其呈现对应于起始单晶结构的复制单晶结构。