公开(公告)号：US09593406B2

公开(公告)日：2017-03-14

申请号：US14550239

申请日：2014-11-21

申请人： SINO-AMERICAN SILICON PRODUCTS INC. ,  Miin-Jang Chen

发明人： Miin-Jang Chen ,  Wen-Ching Hsu

IPC分类号： H01L31/0216 ,  H01L31/0224 ,  H01L31/0336 ,  H01L33/06 ,  H01L33/24 ,  C23C14/08 ,  G02B1/113 ,  G02B1/115 ,  C23C16/04 ,  C23C16/40 ,  C23C16/455 ,  C23C14/34 ,  C25D5/10 ,  C25D7/00 ,  C23C18/16

CPC分类号： C23C14/08 ,  C23C14/34 ,  C23C16/045 ,  C23C16/403 ,  C23C16/45525 ,  C23C18/165 ,  C25D5/10 ,  C25D7/00 ,  G02B1/113 ,  G02B1/115 ,  Y10T428/24364

摘要： The invention provides an optical device and manufacture thereof. The optical device of the invention includes a transparent substrate, a seeding layer, a plurality of nano-rods and a protection layer. The seeding layer is formed to overlay an entrance surface and an exit surface of the transparent substrate. The plurality of nano-rods are formed on the seeding layer. The protection layer is formed to completely overlay the plurality of nano-rods.

摘要翻译： 本发明提供一种光学装置及其制造方法。 本发明的光学装置包括透明基板，接种层，多个纳米棒和保护层。 形成接合层以覆盖透明基板的入射表面和出射表面。 在接种层上形成多个纳米棒。 保护层形成为完全覆盖多个纳米棒。

公开(公告)号：US10923343B2

公开(公告)日：2021-02-16

申请号：US16131249

申请日：2018-09-14

申请人： CORREMAX International Co., Ltd. ,  Miin-Jang Chen

发明人： Miin-Jang Chen ,  Chen-Yang Chung

IPC分类号： H01L21/02 ,  H01L29/51 ,  H01J37/32 ,  C23C16/455 ,  C23C16/56 ,  C23C16/503 ,  C23C16/40

摘要： The invention discloses a high-k dielectric layer, a fabricating method thereof and a multi-function equipment implementing such fabricating method. The high-k dielectric layer of the invention includes M atomic-layer-deposited films formed in sequence on a material layer of a semiconductor device, where M is an integer larger than 1. The material layer can be a semiconductor layer, a metal layer or another dielectric layer. Each atomic-layer-deposited film is formed of an oxide and formed by an atomic layer deposition (ALD) process. N assigned films among the M atomic-layer-deposited films are bombarded by a non-reactive gas plasma during or after the cycles of the ALD process, where N is a natural number and less than or equal to M.

公开(公告)号：US20130186460A1

公开(公告)日：2013-07-25

申请号：US13553816

申请日：2012-07-20

申请人： Miin-Jang Chen ,  Hsin-Jui Chen

发明人： Miin-Jang Chen ,  Hsin-Jui Chen

IPC分类号： H01L31/0236 ,  H01L31/18 ,  B82Y99/00

CPC分类号： B82Y20/00 ,  B82Y40/00 ,  H01L31/02167 ,  H01L31/02363 ,  H01L31/035227 ,  H01L31/068 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： A method of manufacturing a solar cell includes following steps. A first-conductive-type silicon wafer is provided. The silicon wafer has a first (front) surface and a second (back) surface facing each other, and a plurality of nanorods are located on the first surface. A doping process is performed, so that the conductive type of the nanorods and the conductive type of one portion of the silicon wafer located below the nanorods are changed to a second conductive type. A first electrode is formed on the second surface, and a first annealing process is performed on the first electrode. A second electrode is formed on a partial region of the first surface. An atomic layer deposition process is performed to form a passivation layer on the first surface and surfaces of the nanorods.

摘要翻译： 制造太阳能电池的方法包括以下步骤。 提供第一导电型硅晶片。 硅晶片具有彼此面对的第一（前）表面和第二（背面）表面，并且多个纳米棒位于第一表面上。 执行掺杂工艺，使得位于纳米棒下方的纳米棒的导电类型和硅晶片的一部分的导电类型被改变为第二导电类型。 第一电极形成在第二表面上，并且在第一电极上进行第一退火处理。 第二电极形成在第一表面的部分区域上。 进行原子层沉积工艺以在纳米棒的第一表面和表面上形成钝化层。

公开(公告)号：US11322348B2

公开(公告)日：2022-05-03

申请号：US17141935

申请日：2021-01-05

申请人： Miin-Jang Chen

发明人： Miin-Jang Chen ,  Chen-Yang Chung

IPC分类号： H01L21/02 ,  H01J37/32 ,  C23C16/455 ,  C23C16/56 ,  H01L29/51 ,  C23C16/503 ,  C23C16/40

摘要： A multi-function equipment implements a method of fabricating a thin film. The multi-function equipment according to the invention includes a reaction chamber, a plasma source, a plasma source power generating unit, a bias electrode, an AC (Alternating Current) voltage generating unit, a DC (Direct current) bias generating unit, a metal chuck, a first precursor supply source, a second precursor supply source, a carrier gas supply source, an oxygen supply source, a nitrogen supply source, an inert gas supply source, an automatic pressure controller, and a vacuum pump.

公开(公告)号：US08890275B2

公开(公告)日：2014-11-18

申请号：US13305066

申请日：2011-11-28

申请人： Miin-Jang Chen ,  Hsin-Jui Chen ,  Wen-Ching Hsu

发明人： Miin-Jang Chen ,  Hsin-Jui Chen ,  Wen-Ching Hsu

IPC分类号： H01L31/102 ,  H01L31/0216 ,  H01L31/18

CPC分类号： H01L31/02161 ,  H01L31/02167 ,  H01L31/1868 ,  Y02E10/50 ,  Y02P70/521

摘要： The invention discloses an optoelectronic device and method of fabricating the same. The optoelectronic device according to the invention includes a semiconductor structure combination, a first surface passivation layer formed on an upper surface of the semiconductor structure combination, and a second surface passivation layer formed on the first surface passivation layer. The semiconductor structure combination includes at least one P-N junction. In particular, the interfacial state density of the first surface passivation layer is lower than that of the second surface passivation layer, and the fixed oxide charge density of the second surface passivation layer is higher than that of the first surface passivation layer.

摘要翻译： 本发明公开了一种光电器件及其制造方法。 根据本发明的光电子器件包括半导体结构组合，形成在半导体结构组合的上表面上的第一表面钝化层和形成在第一表面钝化层上的第二表面钝化层。 半导体结构组合包括至少一个P-N结。 特别地，第一表面钝化层的界面状态密度低于第二表面钝化层的界面状态密度，并且第二表面钝化层的固定氧化物电荷密度高于第一表面钝化层的固定氧化物电荷密度。

公开(公告)号：US20090050914A1

公开(公告)日：2009-02-26

申请号：US12196911

申请日：2008-08-22

申请人： Miin-Jang Chen ,  Wen-Ching Hsu ,  Szu-Hua Ho

发明人： Miin-Jang Chen ,  Wen-Ching Hsu ,  Szu-Hua Ho

IPC分类号： H01L33/00

CPC分类号： H01L33/007 ,  H01L33/12

摘要： The invention discloses a semiconductor light-emitting device and a method of fabricating the same. The semiconductor light-emitting device according to the invention includes a substrate, a buffer layer, a multi-layer structure, and an ohmic electrode structure. The buffer layer is selectively formed on an upper surface of the substrate such that the upper surface of the substrate is partially exposed. The multi-layer structure is formed to overlay the buffer layer and the exposed upper surface of the substrate. The multi-layer structure includes a light-emitting region. The buffer layer assists a bottom-most layer of the multi-layer structure in lateral and vertical epitaxial growth. The ohmic electrode structure is formed on the multi-layer structure.

摘要翻译： 本发明公开了一种半导体发光器件及其制造方法。 根据本发明的半导体发光器件包括衬底，缓冲层，多层结构和欧姆电极结构。 缓冲层选择性地形成在衬底的上表面上，使得衬底的上表面部分露出。 形成多层结构以覆盖缓冲层和暴露的衬底的上表面。 多层结构包括发光区域。 缓冲层在横向和垂直外延生长中辅助多层结构的最底层。 欧姆电极结构形成在多层结构上。

公开(公告)号：US20120199935A1

公开(公告)日：2012-08-09

申请号：US13305066

申请日：2011-11-28

申请人： Miin-Jang Chen ,  Hsin-Jui Chen ,  Wen-Ching Hsu

发明人： Miin-Jang Chen ,  Hsin-Jui Chen ,  Wen-Ching Hsu

IPC分类号： H01L31/102 ,  H01L31/18 ,  B82Y30/00

CPC分类号： H01L31/02161 ,  H01L31/02167 ,  H01L31/1868 ,  Y02E10/50 ,  Y02P70/521

摘要： The invention discloses an optoelectronic device and method of fabricating the same. The optoelectronic device according to the invention includes a semiconductor structure combination, a first surface passivation layer formed on an upper surface of the semiconductor structure combination, and a second surface passivation layer formed on the first surface passivation layer. The semiconductor structure combination includes at least one P-N junction. In particular, the interfacial state density of the first surface passivation layer is lower than that of the second surface passivation layer, and the fixed oxide charge density of the second surface passivation layer is higher than that of the first surface passivation layer.

摘要翻译： 本发明公开了一种光电器件及其制造方法。 根据本发明的光电子器件包括半导体结构组合，形成在半导体结构组合的上表面上的第一表面钝化层和形成在第一表面钝化层上的第二表面钝化层。 半导体结构组合包括至少一个P-N结。 特别地，第一表面钝化层的界面状态密度低于第二表面钝化层的界面状态密度，并且第二表面钝化层的固定氧化物电荷密度高于第一表面钝化层的固定氧化物电荷密度。

公开(公告)号：US08110739B2

公开(公告)日：2012-02-07

申请号：US11896087

申请日：2007-08-29

申请人： Miin-Jang Chen ,  Wen-Ching Hsu ,  Ya-Lan Ho ,  Jung-Tsung Wang

发明人： Miin-Jang Chen ,  Wen-Ching Hsu ,  Ya-Lan Ho ,  Jung-Tsung Wang

IPC分类号： H01L31/0216 ,  H01L31/0224

CPC分类号： H01L31/022466 ,  H01L31/02168 ,  H01L31/022483 ,  H01L31/0236 ,  H01L31/068 ,  H01L31/072 ,  H01L31/1884 ,  Y02E10/50

摘要： The invention provides a solar cell and a method of fabricating the same. The solar cell, according to a preferred embodiment of the invention, includes a semiconductor structure combination and a multi-atomic-layer structure formed of at least one oxide. The semiconductor structure combination includes at least one p-n junction and has an illuminated surface. The multi-atomic-layer structure overlays the illuminated surface of the semiconductor structure combination. In particular, the multi-atomic-layer structure serves as a surface passivation layer, a transparent conductive layer, and further as an anti-reflective layer.

摘要翻译： 本发明提供一种太阳能电池及其制造方法。 根据本发明的优选实施例的太阳能电池包括由至少一种氧化物形成的半导体结构组合和多原子层结构。 半导体结构组合包括至少一个p-n结并具有照明表面。 多原子层结构覆盖半导体结构组合的照射表面。 特别地，多原子层结构用作表面钝化层，透明导电层，并且还用作抗反射层。

公开(公告)号：US07910388B2

公开(公告)日：2011-03-22

申请号：US12196911

申请日：2008-08-22

申请人： Miin-Jang Chen ,  Wen-Ching Hsu ,  Suz-Hua Ho

发明人： Miin-Jang Chen ,  Wen-Ching Hsu ,  Suz-Hua Ho

IPC分类号： H01L21/00

CPC分类号： H01L33/007 ,  H01L33/12

摘要： The invention discloses a semiconductor light-emitting device and a method of fabricating the same. The semiconductor light-emitting device according to the invention includes a substrate, a buffer layer, a multi-layer structure, and an ohmic electrode structure. The buffer layer is selectively formed on an upper surface of the substrate such that the upper surface of the substrate is partially exposed. The multi-layer structure is formed to overlay the buffer layer and the exposed upper surface of the substrate. The multi-layer structure includes a light-emitting region. The buffer layer assists a bottom-most layer of the multi-layer structure in lateral and vertical epitaxial growth. The ohmic electrode structure is formed on the multi-layer structure.

摘要翻译： 本发明公开了一种半导体发光器件及其制造方法。 根据本发明的半导体发光器件包括衬底，缓冲层，多层结构和欧姆电极结构。 缓冲层选择性地形成在衬底的上表面上，使得衬底的上表面部分露出。 形成多层结构以覆盖缓冲层和暴露的衬底的上表面。 多层结构包括发光区域。 缓冲层在横向和垂直外延生长中辅助多层结构的最底层。 欧姆电极结构形成在多层结构上。

公开(公告)号：US20110003420A1

公开(公告)日：2011-01-06

申请号：US12592926

申请日：2009-12-04

申请人： Miin-Jang Chen ,  Sheng-Fu Yu ,  Ray-Ming Lin ,  Wen-Ching Hsu ,  Szu-Hua Ho

发明人： Miin-Jang Chen ,  Sheng-Fu Yu ,  Ray-Ming Lin ,  Wen-Ching Hsu ,  Szu-Hua Ho

IPC分类号： H01L21/20 ,  H01L33/00

CPC分类号： H01L21/0262 ,  H01L21/0237 ,  H01L21/02403 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/02472 ,  H01L21/02507 ,  H01L21/0254 ,  H01L33/007 ,  H01L33/12

摘要： The present invention discloses a method for fabricating gallium nitride(GaN)-based compound semiconductors. Particularly, this invention relates to a method of forming a transition layer on a zinc oxide (ZnO)-based semiconductor layer by the steps of forming a wetting layer and making the wetting layer nitridation. The method not only provides a function of protecting the ZnO-based semiconductor layer, but also uses the transition layer as a buffer layer for a following epitaxial growth of a GaN-based semiconductor layer, and thus, the invention may improve the crystal quality of the GaN-based semiconductor layer effectively.

摘要翻译： 本发明公开了一种制造氮化镓（GaN）基化合物半导体的方法。 特别地，本发明涉及通过形成润湿层并进行润湿层氮化的步骤在基于氧化锌（ZnO）的半导体层上形成过渡层的方法。 该方法不仅提供保护ZnO类半导体层的功能，而且还使用过渡层作为GaN类半导体层的随后的外延生长的缓冲层，因此本发明可以提高晶体质量 GaN基半导体层。