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公开(公告)号:US20210377483A1
公开(公告)日:2021-12-02
申请号:US16769830
申请日:2018-06-14
Applicant: SK hynix Inc.
Inventor: Chang Hyun KIM , Wan Jun ROH , Doo Bock LEE , Seung Hun LEE , Jae Jin LEE , Chun Seok JEONG
Abstract: In accordance with an embodiment of the present disclosure, an image synchronization device includes a light emitting source configured to emit light at intervals of a predetermined time, a sampling phase calibration circuit configured to calibrate a sampling phase of each of the first image sensor and the second image sensor on the basis of a light emitting timing of the light emitting source and a delay calibration circuit configured to generate delay information on the basis of a result of comparison between first image information transmitted from the first image sensor and second image information transmitted from the second image sensor.
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公开(公告)号:US20210117131A1
公开(公告)日:2021-04-22
申请号:US17134117
申请日:2020-12-24
Applicant: SK hynix Inc.
Inventor: Chang Hyun KIM , Eui Cheol LIM , Young Jung CHOI , Hyung Sik WON , Sun Woong KIM
Abstract: A memory system is disclosed, which relates to technology for implementing data communication between memory devices. The memory system includes a plurality of memory devices and a memory controller. The memory devices allow a data packet composed of data and header information to be directly communicated between the memory devices. The memory controller transmits the data packet to a source memory device from among the plurality of memory devices, and receives the data packet from a last memory device from among the plurality of memory devices. Each of the memory devices hashes the header information such that the data is accessed, using a result of the hash, in address regions located at different positions.
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公开(公告)号:US20190220227A1
公开(公告)日:2019-07-18
申请号:US15996770
申请日:2018-06-04
Applicant: SK hynix Inc.
Inventor: Chang Hyun KIM , Jaeil KIM
IPC: G06F3/06
CPC classification number: G06F3/0659 , G06F3/0604 , G06F3/0634 , G06F3/0656 , G06F3/0673
Abstract: A semiconductor device includes an operation control circuit and a mode register activation signal generation circuit. The operation control circuit generates a chip identification storage control signal, a selection identification storage control signal, and a mode register set signal in response to an external set signal and a command. The mode register activation signal generation circuit generates a chip identification and a selection identification in response to the chip identification storage control signal and the selection identification storage control signal. The mode register activation signal generation circuit also generates a mode register activation signal for controlling a mode register set operation in response to the mode register set signal when the chip identification is identical to the selection identification.
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公开(公告)号:US20180197597A1
公开(公告)日:2018-07-12
申请号:US15609219
申请日:2017-05-31
Applicant: SK hynix Inc.
Inventor: Chang Hyun KIM
IPC: G11C11/406 , G06F11/10 , G11C29/52 , G11C11/4091 , G11C11/408
CPC classification number: G11C11/40615 , G06F11/1068 , G11C11/40618 , G11C11/4094 , G11C29/52
Abstract: A semiconductor device may be provided. The semiconductor device may include an error scrub control circuit and or an active period signal generation circuit. The error scrub control circuit may be configured to generate an error scrub pre-charge signal and an error scrub bank signal for performing an error scrub operation of memory cells included in banks, based on a bank active signal and a row address signal which are generated based on a refresh signal. The active period signal generation circuit may be configured to generate an active period signal from the bank active signal and the error scrub pre-charge signal based on the error scrub bank signal.
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公开(公告)号:US20180018219A1
公开(公告)日:2018-01-18
申请号:US15428856
申请日:2017-02-09
Applicant: SK hynix Inc.
Inventor: Chang Hyun KIM , Do Yun LEE
CPC classification number: G06F11/106 , G06F11/1068 , G11C7/10 , G11C7/1012 , G11C7/12 , G11C7/22 , G11C8/06 , G11C8/08 , G11C11/4076 , G11C11/408 , G11C29/52 , G11C2029/0409
Abstract: A semiconductor system including a first semiconductor device and a second semiconductor device may be provided. The first semiconductor device may be configured to outputs commands and addresses. The first semiconductor device may be configured to output or receive data. The second semiconductor device may be configured to store addresses of output data having an erroneous bit and the output data in memory cells during a read operation and perform an error scrub operation.
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公开(公告)号:US20170371746A1
公开(公告)日:2017-12-28
申请号:US15373045
申请日:2016-12-08
Applicant: SK hynix Inc.
Inventor: Chang Hyun KIM
CPC classification number: G06F11/1068 , G06F3/0619 , G06F3/064 , G06F3/0679 , G11C29/52 , H03M13/1575 , H03M13/19 , H03M13/2909 , H03M13/616
Abstract: A semiconductor device correcting data errors using a hamming code is provided. The hamming code is realized by an error check matrix, and the error check matrix includes a first sub- matrix and a second sub-matrix. The first sub-matrix includes column vectors having an odd weight. The second sub-matrix includes an up matrix and a down matrix. Each of the up matrix and the down matrix includes column vectors having an odd weight.
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公开(公告)号:US20170358337A1
公开(公告)日:2017-12-14
申请号:US15677226
申请日:2017-08-15
Applicant: SK hynix Inc.
Inventor: Chang Hyun KIM
CPC classification number: G11C7/22 , G06F11/1044 , G11C7/1006 , G11C7/12 , G11C16/26 , G11C29/38 , H03K5/2472 , H03K19/21
Abstract: A comparison circuit may be provided. The comparison circuit may include a number of first logic circuits and a number of second logic circuits. The first logic circuits and second logic circuits may be configured to compare logic levels of a plurality of input signals with each other to generate a comparison signal having a first logic level if the number of input signals have an even number of input signals at a second logic level.
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公开(公告)号:US20170186469A1
公开(公告)日:2017-06-29
申请号:US15096578
申请日:2016-04-12
Applicant: SK hynix Inc.
Inventor: Min Chang KIM , Chang Hyun KIM , Do Yun LEE , Jae Jin LEE , Hun Sam JUNG
CPC classification number: G11C7/1039 , G11C5/025 , G11C5/04 , G11C7/065 , G11C7/1006 , G11C7/14 , G11C29/022 , G11C29/023 , G11C29/12005 , G11C29/1201 , G11C29/12015 , G11C29/14 , G11C29/46 , G11C29/48 , G11C29/56012 , G11C2029/5602
Abstract: A memory circuit may be provided. The memory circuit may include a memory array. The memory circuit may include an input and output path circuit coupled to a probe pad and a bump pad, and may be configured to input and output a signal between an exterior of the memory circuit and the memory array. The memory circuit may include a scanning circuit configured to generate a sensing signal by sensing a signal outputted through the bump pad while performing scanning of at least one of a reference voltage and a test strobe signal.
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公开(公告)号:US20170153995A1
公开(公告)日:2017-06-01
申请号:US15066115
申请日:2016-03-10
Applicant: SK hynix Inc.
Inventor: Chang Hyun KIM
IPC: G06F13/362 , G06F13/40
CPC classification number: G06F13/362 , G06F13/4068
Abstract: A data transfer device includes a shifter block that generates first and second input signals and first and second output signals, an input/output control block that selects the first input signal and the first output signal in correspondence to a mode signal and outputs an input control signal and an output control signal for controlling a data input/output operation, or selects the second input signal and the second output signal and outputs the input control signal and the output control signal, and a buffer block that latches first input data or second input data which have different data bit widths according to the input control signal, and outputs first output data or second output data which have different data bit widths according to the output control signal.
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公开(公告)号:US20160161968A1
公开(公告)日:2016-06-09
申请号:US14664524
申请日:2015-03-20
Applicant: SK hynix Inc.
Inventor: Chang Hyun KIM , Choung Ki SONG
IPC: G05F3/02 , G11C11/4074 , G11C5/14 , H01L25/065
CPC classification number: G11C11/4074 , G05F3/02 , G11C5/14 , G11C5/147 , G11C7/1066 , G11C7/1093 , G11C11/4093 , H01L23/481 , H01L25/0657 , H01L25/18 , H01L2224/13025 , H01L2224/16145 , H01L2224/16146 , H01L2224/16225 , H01L2224/16227 , H01L2224/17181 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2225/06565 , H01L2924/0002 , H01L2924/15311 , H01L2924/00
Abstract: A semiconductor apparatus including a multichip package is disclosed. The semiconductor apparatus includes a slave chip having a slave region and a master region. The slave region is configured to have a first threshold voltage smaller than an operation voltage and the master region is configured to have a second threshold voltage greater than the operation voltage.
Abstract translation: 公开了一种包括多芯片封装的半导体装置。 半导体装置包括具有从区域和主区域的从芯片。 从区域被配置成具有小于操作电压的第一阈值电压,并且主区域被配置为具有大于操作电压的第二阈值电压。
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