中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

218 records (took 0.026 seconds)

    Semiconductor memory structures
    1.
    发明授权
    Semiconductor memory structures 有权
    半导体存储器结构

    公开(公告)号：US07888719B2

    公开(公告)日：2011-02-15

    申请号：US11752736

    申请日：2007-05-23

    Applicant: Shau-Lin Shue ,  Chao-An Jong

    Inventor： Shau-Lin Shue ,  Chao-An Jong

    IPC: H01L29/94 ,  H01L29/00

    CPC classification number: H01L45/144 ,  H01L27/2436 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/16

    Abstract: A semiconductor structure includes a first conductive layer coupled to a transistor. A first dielectric layer is over the first conductive layer. A second conductive layer is within the first dielectric layer, contacting a portion of a top surface of the first conductive layer. The second conductive layer includes a cap portion extending above a top surface of the first dielectric layer. A first dielectric spacer is between the first dielectric layer and the second conductive layer. A phase change material layer is above a top surface of the second conductive layer. A third conductive layer is over the phase change material layer. A second dielectric layer is over the first dielectric layer. A second dielectric spacer is on a sidewall of the cap portion, wherein a thermal conductivity of the second dielectric spacer is less than that of the first dielectric layer or that of the second dielectric layer.

    Abstract translation: 半导体结构包括耦合到晶体管的第一导电层。 第一电介质层在第一导电层之上。 第二导电层在第一介电层内，与第一导电层的顶表面的一部分接触。 第二导电层包括在第一介电层的顶表面上方延伸的盖部分。 第一介电隔离物在第一介电层和第二导电层之间。 相变材料层在第二导电层的顶表面之上。 第三导电层在相变材料层之上。 第二电介质层在第一介电层上。 第二电介质间隔物位于帽部分的侧壁上，其中第二电介质间隔物的热导率小于第一电介质层或第二电介质层的热导率。

    SEMICONDUCTOR MEMORY STRUCTURES
    2.
    发明申请
    SEMICONDUCTOR MEMORY STRUCTURES 有权
    半导体存储器结构

    公开(公告)号：US20080308782A1

    公开(公告)日：2008-12-18

    申请号：US11763938

    申请日：2007-06-15

    Applicant: Shau-Lin Shue ,  Chao-An Jong

    Inventor： Shau-Lin Shue ,  Chao-An Jong

    IPC: H01L47/00

    CPC classification number: H01L45/144 ,  G11C11/5678 ,  G11C13/0004 ,  H01L27/2436 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/124 ,  H01L45/1683 ,  H01L45/1691

    Abstract: A semiconductor structure includes a transistor over a substrate, the transistor comprising a gate and a contact region, which is adjacent to the gate and within the substrate. A first dielectric layer is over the contact region. A contact structure is within the first dielectric layer and over the contact region. A first electrode and a second electrode are within the first dielectric layer, wherein at least one of the first electrode and the second electrode is over the contact structure. The first electrode and second electrodes may be laterally or vertically separated. A phase change structure is disposed between the first electrode and the second electrode. The phase change structure includes at least one spacer within the first dielectric layer and a phase change material (PCM) layer over the spacer.

    Abstract translation: 半导体结构包括在衬底上的晶体管，晶体管包括与栅极和衬底内的栅极和接触区域。 第一电介质层在接触区域之上。 接触结构在第一介电层内部和接触区域之上。 第一电极和第二电极在第一电介质层内，其中第一电极和第二电极中的至少一个位于接触结构之上。 第一电极和第二电极可以是横向或垂直分离的。 相变结构设置在第一电极和第二电极之间。 相变结构包括第一介电层内的至少一个间隔物和间隔物上的相变材料（PCM）层。

    Semiconductor memory structures
    3.
    发明授权
    Semiconductor memory structures 有权
    半导体存储器结构

    公开(公告)号：US08410607B2

    公开(公告)日：2013-04-02

    申请号：US11763938

    申请日：2007-06-15

    Applicant: Shau-Lin Shue ,  Chao-An Jong

    Inventor： Shau-Lin Shue ,  Chao-An Jong

    IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40

    CPC classification number: H01L45/144 ,  G11C11/5678 ,  G11C13/0004 ,  H01L27/2436 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/124 ,  H01L45/1683 ,  H01L45/1691

    Abstract: A semiconductor structure includes a transistor over a substrate, the transistor comprising a gate and a contact region, which is adjacent to the gate and within the substrate. A first dielectric layer is over the contact region. A contact structure is within the first dielectric layer and over the contact region. A first electrode and a second electrode are within the first dielectric layer, wherein at least one of the first electrode and the second electrode is over the contact structure. The first electrode and second electrodes may be laterally or vertically separated. A phase change structure is disposed between the first electrode and the second electrode. The phase change structure includes at least one spacer within the first dielectric layer and a phase change material (PCM) layer over the spacer.

    Abstract translation: 半导体结构包括在衬底上的晶体管，所述晶体管包括与栅极和衬底内的栅极和接触区域。 第一电介质层在接触区域之上。 接触结构在第一介电层内部和接触区域之上。 第一电极和第二电极在第一电介质层内，其中第一电极和第二电极中的至少一个位于接触结构之上。 第一电极和第二电极可以是横向或垂直分离的。 相变结构设置在第一电极和第二电极之间。 相变结构包括第一介电层内的至少一个间隔物和间隔物上的相变材料（PCM）层。

    SEMICONDUCTOR MEMORY STRUCTURES
    4.
    发明申请
    SEMICONDUCTOR MEMORY STRUCTURES 有权
    半导体存储器结构

    公开(公告)号：US20080290467A1

    公开(公告)日：2008-11-27

    申请号：US11752736

    申请日：2007-05-23

    Applicant: Shau-Lin Shue ,  Chao-An Jong

    Inventor： Shau-Lin Shue ,  Chao-An Jong

    IPC: H01L29/94 ,  H01L29/12

    CPC classification number: H01L45/144 ,  H01L27/2436 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/16

    Abstract: A semiconductor structure includes a first conductive layer coupled to a transistor. A first dielectric layer is over the first conductive layer. A second conductive layer is within the first dielectric layer, contacting a portion of a top surface of the first conductive layer. The second conductive layer includes a cap portion extending above a top surface of the first dielectric layer. A first dielectric spacer is between the first dielectric layer and the second conductive layer. A phase change material layer is above a top surface of the second conductive layer. A third conductive layer is over the phase change material layer. A second dielectric layer is over the first dielectric layer. A second dielectric spacer is on a sidewall of the cap portion, wherein a thermal conductivity of the second dielectric spacer is less than that of the first dielectric layer or that of the second dielectric layer.

    Abstract translation: 半导体结构包括耦合到晶体管的第一导电层。 第一电介质层在第一导电层之上。 第二导电层在第一介电层内，与第一导电层的顶表面的一部分接触。 第二导电层包括在第一介电层的顶表面上方延伸的盖部分。 第一介电隔离物在第一介电层和第二导电层之间。 相变材料层在第二导电层的顶表面之上。 第三导电层在相变材料层之上。 第二电介质层在第一介电层上。 第二电介质间隔物位于帽部分的侧壁上，其中第二电介质间隔物的热导率小于第一电介质层或第二电介质层的热导率。

    Method for thinning a wafer
    8.
    发明授权
    Method for thinning a wafer 有权
    减薄晶片的方法

    公开(公告)号：US08252682B2

    公开(公告)日：2012-08-28

    申请号：US12704695

    申请日：2010-02-12

    Applicant: Ku-Feng Yang ,  Weng-Jin Wu ,  Hsin-Hsien Lu ,  Chia-Lin Yu ,  Chu-Sung Shih ,  Fu-Chi Hsu ,  Shau-Lin Shue

    Inventor： Ku-Feng Yang ,  Weng-Jin Wu ,  Hsin-Hsien Lu ,  Chia-Lin Yu ,  Chu-Sung Shih ,  Fu-Chi Hsu ,  Shau-Lin Shue

    IPC: H01L21/44 ,  H01L23/48

    CPC classification number: H01L21/76898 ,  H01L2224/02372

    Abstract: A method for thinning a wafer is provided. In one embodiment, a wafer is provided having a plurality of semiconductor chips, the wafer having a first side and a second side opposite the first side, wherein each of the chips includes a set of through silicon vias (TSVs), each of the TSVs substantially sealed by a liner layer and a barrier layer. A wafer carrier is provided for attaching to the second side of the wafer. The first side of the wafer is thinned and thereafer recessed to partially expose portions of the liner layers, barrier layers and the TSVs protruding from the wafer. An isolation layer is deposited over the first side of the wafer and the top portions of the liner layers, barrier layers and the TSVs. Thereafter, an insulation layer is deposited over the isolation layer. The insulation layer is then planarized to expose top portions of the TSVs. A dielectric layer is deposited over the planarized first side of the wafer. One or more electrical contacts are formed in the dielectric layer for electrical connection to the exposed one or more TSVs.

    Abstract translation: 提供了一种用于薄化晶片的方法。 在一个实施例中，提供具有多个半导体芯片的晶片，晶片具有第一侧和与第一侧相对的第二侧，其中每个芯片包括一组穿通硅通孔（TSV），每个TSV 基本上被衬垫层和阻挡层密封。 提供晶片载体以附接到晶片的第二侧。 晶片的第一侧变薄并且凹陷以部分地暴露衬里层，阻挡层和从晶片突出的TSV的部分。 隔离层沉积在晶片的第一侧和衬垫层，阻挡层和TSV的顶部之上。 此后，绝缘层沉积在隔离层上。 然后将绝缘层平坦化以暴露TSV的顶部。 电介质层沉积在晶片的平坦化第一侧上。 在电介质层中形成一个或多个电触头，用于与暴露的一个或多个TSV电连接。

    Air gap for interconnect application
    10.
    发明授权
    Air gap for interconnect application 有权
    互连应用的气隙

    公开(公告)号：US07682963B2

    公开(公告)日：2010-03-23

    申请号：US11867308

    申请日：2007-10-04

    Applicant: Hai-Ching Chen ,  Sunil Kumar Singh ,  Tien-I Bao ,  Shau-Lin Shue ,  Chen-Hua Yu

    Inventor： Hai-Ching Chen ,  Sunil Kumar Singh ,  Tien-I Bao ,  Shau-Lin Shue ,  Chen-Hua Yu

    IPC: H01L21/4763

    CPC classification number: H01L23/5222 ,  H01L21/7682 ,  H01L23/53252 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: The present disclosure provides a method for fabricating an integrated circuit. The method includes forming an energy removable film (ERF) on a substrate; forming a first dielectric layer on the ERF; patterning the ERF and first dielectric layer to form a trench in the ERF and the first dielectric layer; filling a conductive material in the trench; forming a ceiling layer on the first dielectric layer and conductive material filled in the trench; and applying energy to the ERF to form air gaps in the ERF after the forming of the ceiling layer.

    Abstract translation: 本公开提供了一种用于制造集成电路的方法。 该方法包括在基板上形成能量可去除膜（ERF）; 在ERF上形成第一介电层; 图案化ERF和第一介电层以在ERF和第一介电层中形成沟槽; 在沟槽中填充导电材料; 在第一介电层上形成顶层和填充在沟槽中的导电材料; 并且在形成天花板层之后，向ERF施加能量以在ERF中形成气隙。

Patent Agency Ranking