公开(公告)号：US11069978B2

公开(公告)日：2021-07-20

申请号：US15943383

申请日：2018-04-02

申请人： Skyworks Solutions, Inc.

发明人： Dinhphuoc Vu Hoang ,  Robert Francis Darveaux ,  Anthony James LoBianco ,  Lori Ann DeOrio ,  Hoang Mong Nguyen ,  Ki Wook Lee ,  Hardik Bhupendra Modi ,  Foad Arfaei Malekzadeh ,  Stephen Joseph Kovacic ,  René Rodriguez

IPC分类号： H01Q9/04 ,  B29C41/42 ,  H01Q5/35 ,  H01Q9/06 ,  H01Q1/52 ,  B29L31/34 ,  H01Q1/38 ,  H01Q21/06 ,  H01Q1/22

摘要： A method for manufacturing a package with a conformal shield antenna includes forming a mold compound layer, attaching the mold compound layer to a printed circuit board, applying a conformal shield layer on a first surface of the mold compound layer, the mold compound layer disposed between the conformal shield layer and the printed circuit board module, and shaping the conformal shield layer to define a planar antenna structure. Optionally, the method includes forming a cavity in the mold compound layer, applying a cover layer over the cavity to enclose the cavity and hardening the cover layer.

公开(公告)号：US20210159209A1

公开(公告)日：2021-05-27

申请号：US17166917

申请日：2021-02-03

申请人： Skyworks Solutions, Inc.

发明人： Sandra Louise Petty-Weeks ,  Guohao Zhang ,  Hardik Bhupendra Modi

IPC分类号： H01L23/00 ,  H01L23/66

摘要： This disclosure relates to a transmission line for high performance radio frequency (RF) applications. One such transmission line can include a bonding layer configured to receive an RF signal, a barrier layer, a diffusion barrier layer, and a conductive layer proximate to the diffusion barrier layer. The diffusion barrier layer can have a thickness that allows a received RF signal to penetrate the diffusion barrier layer to the conductive layer. In certain implementations, the diffusion barrier layer can be nickel. In some of these implementations, the transmission line can include a gold bonding layer, a palladium barrier layer, and a nickel diffusion barrier layer.

公开(公告)号：US10965035B2

公开(公告)日：2021-03-30

申请号：US15982155

申请日：2018-05-17

申请人： Skyworks Solutions, Inc.

发明人： René Rodríguez ,  Dinhphuoc Vu Hoang ,  Hardik Bhupendra Modi

IPC分类号： H01Q1/38 ,  H01Q9/30 ,  H01Q9/04 ,  H01Q1/22 ,  H01Q9/28 ,  H05K1/16

摘要： Reconfigurable antenna systems with ground tuning pads are provided herein. In certain configurations, an antenna system includes a module substrate including a ground plane and a ground tuning pad configured to receive a ground voltage from the ground plane. The antenna system further includes an antenna element and a tuning conductor that is spaced apart from the antenna element and operable to load the antenna element. Furthermore, a switch is electrically connected between the tuning conductor and the ground tuning pad, and operates to selectively connect the tuning conductor to the ground plane by way of the ground tuning pad to provide tuning to the antenna element.

公开(公告)号：US20170271301A1

公开(公告)日：2017-09-21

申请号：US15593160

申请日：2017-05-11

申请人： SKYWORKS SOLUTIONS, INC.

发明人： Sandra Louise Petty-Weeks ,  Guohao Zhang ,  Hardik Bhupendra Modi

IPC分类号： H01L23/00 ,  H01L23/66 ,  H05K1/02 ,  H05K3/24

CPC分类号： H01L24/85 ,  H01L23/66 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L2223/6611 ,  H01L2223/6655 ,  H01L2223/6677 ,  H01L2224/32225 ,  H01L2224/45015 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48159 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/48644 ,  H01L2224/48844 ,  H01L2224/73265 ,  H01L2224/85444 ,  H01L2924/00011 ,  H01L2924/00012 ,  H01L2924/01015 ,  H01L2924/01047 ,  H01L2924/10329 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13051 ,  H01L2924/1421 ,  H01L2924/1423 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19105 ,  H01L2924/3011 ,  H05K1/0243 ,  H05K3/244 ,  H05K2201/0341 ,  H01L2924/00014 ,  H01L2924/00

摘要： This disclosure relates to a radio frequency (RF) transmission line for high performance RF applications. The RF transmission line includes a bonding layer having a bonding surface and configured to receive an RF signal, a barrier layer proximate the bonding layer, a diffusion barrier layer proximate the bonding layer and configured to prevent contaminant from entering the bonding layer, and a conductive layer proximate the diffusion barrier layer. The diffusion barrier layer has a thickness that allows the received RF signal to penetrate the diffusion barrier layer to the conductive layer. The diffusion barrier layer can be a nickel layer.

公开(公告)号：US09660584B2

公开(公告)日：2017-05-23

申请号：US14686559

申请日：2015-04-14

申请人： Skyworks Solutions, Inc.

发明人： Hardik Bhupendra Modi ,  Sandra Louise Petty-Weeks ,  Hongxiao Shao ,  Weimin Sun ,  Peter J. Zampardi, Jr. ,  Guohao Zhang

IPC分类号： H03F3/195 ,  H03F1/02 ,  H03F3/19 ,  H03F3/21 ,  H03F3/24 ,  H01L23/552 ,  H01L23/66 ,  H01L23/00 ,  H01L29/36 ,  H01L29/66 ,  H01L29/737 ,  H01L29/812 ,  H01L29/08 ,  H01L29/205 ,  H01L27/06 ,  H01L23/498 ,  H01L23/50 ,  H03F3/60 ,  H03F3/213 ,  H03F3/187 ,  H03F3/347 ,  H01L29/8605 ,  H01L21/8252 ,  H01L27/092 ,  H03F3/45

CPC分类号： H03F1/0205 ,  H01L21/485 ,  H01L21/4853 ,  H01L21/4864 ,  H01L21/565 ,  H01L21/76898 ,  H01L21/78 ,  H01L21/8249 ,  H01L21/8252 ,  H01L22/14 ,  H01L23/3114 ,  H01L23/481 ,  H01L23/49811 ,  H01L23/49827 ,  H01L23/49838 ,  H01L23/49844 ,  H01L23/49861 ,  H01L23/49866 ,  H01L23/49894 ,  H01L23/50 ,  H01L23/522 ,  H01L23/552 ,  H01L23/66 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/85 ,  H01L24/97 ,  H01L27/0605 ,  H01L27/0623 ,  H01L27/092 ,  H01L29/0684 ,  H01L29/0821 ,  H01L29/0826 ,  H01L29/1004 ,  H01L29/20 ,  H01L29/205 ,  H01L29/36 ,  H01L29/66242 ,  H01L29/66863 ,  H01L29/737 ,  H01L29/7371 ,  H01L29/812 ,  H01L29/8605 ,  H01L2223/6611 ,  H01L2223/6616 ,  H01L2223/6644 ,  H01L2223/665 ,  H01L2223/6655 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05554 ,  H01L2224/05644 ,  H01L2224/45015 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48177 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/48611 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48655 ,  H01L2224/48664 ,  H01L2224/48811 ,  H01L2224/48816 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/48855 ,  H01L2224/48864 ,  H01L2224/4903 ,  H01L2224/49111 ,  H01L2224/49176 ,  H01L2224/85205 ,  H01L2224/85207 ,  H01L2224/85411 ,  H01L2224/85416 ,  H01L2224/85444 ,  H01L2224/85455 ,  H01L2224/85464 ,  H01L2924/00011 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12033 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13051 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/1421 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/19105 ,  H01L2924/19107 ,  H01L2924/3011 ,  H01L2924/30111 ,  H01L2924/3025 ,  H03F1/565 ,  H03F3/187 ,  H03F3/19 ,  H03F3/195 ,  H03F3/21 ,  H03F3/213 ,  H03F3/245 ,  H03F3/347 ,  H03F3/45 ,  H03F3/60 ,  H03F2200/387 ,  H03F2200/451 ,  H03F2200/48 ,  H03F2200/555 ,  H01L2924/00 ,  H01L2924/00014

摘要： One aspect of this disclosure is a power amplifier module that includes a power amplifier; a wire bond pad electrically connected to the power amplifier, the wire bond pad including a nickel layer having a thickness that is less than 0.5 um, a palladium layer over the nickel layer, and a gold layer over the palladium layer; and a conductive trace having a top surface with a plated portion and an unplated portion surrounding the plated portion, the wire bond pad being disposed over the plated portion. Other embodiments of the module are provided along with related methods and components thereof.

公开(公告)号：US20150326182A1

公开(公告)日：2015-11-12

申请号：US14686585

申请日：2015-04-14

申请人： SKYWORKS SOLUTIONS, INC.

发明人： Howard E. Chen ,  Yifan Guo ,  Dinhphuoc Vu Hoang ,  Mehran Janani ,  Tin Myint Ko ,  Philip John Lehtola ,  Anthony James LoBianco ,  Hardik Bhupendra Modi ,  Hoang Mong Nguyen ,  Matthew Thomas Ozalas ,  Sandra Louise Petty-Weeks ,  Matthew Sean Read ,  Jens Albrecht Riege ,  David Steven Ripley ,  Hongxiao Shao ,  Hong Shen ,  Weimin Sun ,  Hsiang-Chih Sun ,  Patrick Lawrence Welch ,  Peter J. Zampardi, JR. ,  Guohao Zhang

IPC分类号： H03F1/02 ,  H03F3/21 ,  H03F3/19

CPC分类号： H03F1/0205 ,  H01L21/485 ,  H01L21/4853 ,  H01L21/4864 ,  H01L21/565 ,  H01L21/76898 ,  H01L21/78 ,  H01L21/8249 ,  H01L21/8252 ,  H01L22/14 ,  H01L23/3114 ,  H01L23/481 ,  H01L23/49811 ,  H01L23/49827 ,  H01L23/49838 ,  H01L23/49844 ,  H01L23/49861 ,  H01L23/49866 ,  H01L23/49894 ,  H01L23/50 ,  H01L23/522 ,  H01L23/552 ,  H01L23/66 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/85 ,  H01L24/97 ,  H01L27/0605 ,  H01L27/0623 ,  H01L27/092 ,  H01L29/0684 ,  H01L29/0821 ,  H01L29/0826 ,  H01L29/1004 ,  H01L29/20 ,  H01L29/205 ,  H01L29/36 ,  H01L29/66242 ,  H01L29/66863 ,  H01L29/737 ,  H01L29/7371 ,  H01L29/812 ,  H01L29/8605 ,  H01L2223/6611 ,  H01L2223/6616 ,  H01L2223/6644 ,  H01L2223/665 ,  H01L2223/6655 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05554 ,  H01L2224/05644 ,  H01L2224/45015 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48177 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/48611 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48655 ,  H01L2224/48664 ,  H01L2224/48811 ,  H01L2224/48816 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/48855 ,  H01L2224/48864 ,  H01L2224/4903 ,  H01L2224/49111 ,  H01L2224/49176 ,  H01L2224/85205 ,  H01L2224/85207 ,  H01L2224/85411 ,  H01L2224/85416 ,  H01L2224/85444 ,  H01L2224/85455 ,  H01L2224/85464 ,  H01L2924/00011 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12033 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13051 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/1421 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/19105 ,  H01L2924/19107 ,  H01L2924/3011 ,  H01L2924/30111 ,  H01L2924/3025 ,  H03F1/565 ,  H03F3/187 ,  H03F3/19 ,  H03F3/195 ,  H03F3/21 ,  H03F3/213 ,  H03F3/245 ,  H03F3/347 ,  H03F3/45 ,  H03F3/60 ,  H03F2200/387 ,  H03F2200/451 ,  H03F2200/48 ,  H03F2200/555 ,  H01L2924/00 ,  H01L2924/00014

摘要： A power amplifier module includes a power amplifier including a GaAs bipolar transistor having a collector, a base abutting the collector, and an emitter, the collector having a doping concentration of at least about 3×1016 cm−3 at a junction with the base, the collector also having at least a first grading in which doping concentration increases away from the base; and an RF transmission line driven by the power amplifier, the RF transmission line including a conductive layer and finish plating on the conductive layer, the finish plating including a gold layer, a palladium layer proximate the gold layer, and a diffusion barrier layer proximate the palladium layer, the diffusion barrier layer including nickel and having a thickness that is less than about the skin depth of nickel at 0.9 GHz. Other embodiments of the module are provided along with related methods and components thereof.

摘要翻译： 功率放大器模块包括功率放大器，其包括具有集电极的GaAs双极晶体管，邻接集电极的基极和发射极，该集电极在与基极的连接处具有至少约3×1016cm-3的掺杂浓度， 所述收集器还具有至少第一分级，其中掺杂浓度从所述基底增加; 以及由功率放大器驱动的RF传输线，RF传输线包括在导电层上的导电层和精整电镀，精加工镀层包括金层，接近金层的钯层和靠近金层的扩散阻挡层 钯层，扩散阻挡层包括镍，并且其厚度小于0.9GHz处的镍的趋肤深度。 模块的其他实施例与其相关方法和组件一起提供。

公开(公告)号：US09083282B2

公开(公告)日：2015-07-14

申请号：US13666627

申请日：2012-11-01

申请人： SKYWORKS SOLUTIONS, INC.

发明人： Guohao Zhang ,  Hardik Bhupendra Modi ,  Sabah Khesbak

IPC分类号： H03F3/04 ,  H03F1/02 ,  H04B1/04 ,  H03F1/56 ,  H03F3/19

CPC分类号： H03F3/245 ,  H01L2224/49171 ,  H03F1/0222 ,  H03F1/565 ,  H03F3/19 ,  H03F3/195 ,  H03F3/21 ,  H03F2200/102 ,  H03F2200/108 ,  H03F2200/387 ,  H03F2200/391 ,  H03F2200/451 ,  H03F2200/465 ,  H04B1/0458

摘要： Apparatus and methods for power amplifiers are disclosed. In one embodiment, a power amplifier circuit assembly includes a power amplifier and an impedance matching network. The impedance matching network is operatively associated with the power amplifier and is configured to provide a load line impedance to the power amplifier between about 6 Ω and about 10 Ω. The impedance matching network includes a fundamental matching circuit and one or more termination circuits, and the fundamental matching circuit and each of the of the one or more termination circuits include separate input terminals for coupling to an output of the power amplifier so as to allow the fundamental matching circuit and each of the one or more termination circuits to be separately tuned.

摘要翻译： 公开了用于功率放大器的装置和方法。 在一个实施例中，功率放大器电路组件包括功率放大器和阻抗匹配网络。 所述阻抗匹配网络与所述功率放大器可操作地相关联，并且被配置为向所述功率放大器提供负载线阻抗。 和约10＆OHgr。 阻抗匹配网络包括基本匹配电路和一个或多个终端电路，并且基本匹配电路和一个或多个终端电路中的每一个包括用于耦合到功率放大器的输出的单独的输入端子，以便允许 基本匹配电路和一个或多个终端电路中的每一个被单独调谐。

公开(公告)号：US09041472B2

公开(公告)日：2015-05-26

申请号：US13917384

申请日：2013-06-13

申请人： SKYWORKS SOLUTIONS, INC.

发明人： Howard E. Chen ,  Yifan Guo ,  Dinhphuoc Vu Hoang ,  Mehran Janani ,  Tin Myint Ko ,  Philip John Lehtola ,  Anthony James LoBianco ,  Hardik Bhupendra Modi ,  Hoang Mong Nguyen ,  Matthew Thomas Ozalas ,  Sandra Louise Petty-Weeks ,  Matthew Sean Read ,  Jens Albrecht Riege ,  David Steven Ripley ,  Hongxiao Shao ,  Hong Shen ,  Weimin Sun ,  Hsiang-Chih Sun ,  Patrick Lawrence Welch ,  Peter J. Zampardi, Jr. ,  Guohao Zhang

IPC分类号： H03F3/14 ,  H03F3/19 ,  H03F3/24 ,  H01L23/552 ,  H01L23/66 ,  H01L23/00 ,  H01L29/36 ,  H01L29/66 ,  H01L29/737 ,  H01L29/812 ,  H01L29/08 ,  H01L29/205 ,  H01L27/06 ,  H01L29/8605 ,  H01L21/8252 ,  H01L27/092

CPC分类号： H03F1/0205 ,  H01L21/485 ,  H01L21/4853 ,  H01L21/4864 ,  H01L21/565 ,  H01L21/76898 ,  H01L21/78 ,  H01L21/8249 ,  H01L21/8252 ,  H01L22/14 ,  H01L23/3114 ,  H01L23/481 ,  H01L23/49811 ,  H01L23/49827 ,  H01L23/49838 ,  H01L23/49844 ,  H01L23/49861 ,  H01L23/49866 ,  H01L23/49894 ,  H01L23/50 ,  H01L23/522 ,  H01L23/552 ,  H01L23/66 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/85 ,  H01L24/97 ,  H01L27/0605 ,  H01L27/0623 ,  H01L27/092 ,  H01L29/0684 ,  H01L29/0821 ,  H01L29/0826 ,  H01L29/1004 ,  H01L29/20 ,  H01L29/205 ,  H01L29/36 ,  H01L29/66242 ,  H01L29/66863 ,  H01L29/737 ,  H01L29/7371 ,  H01L29/812 ,  H01L29/8605 ,  H01L2223/6611 ,  H01L2223/6616 ,  H01L2223/6644 ,  H01L2223/665 ,  H01L2223/6655 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05554 ,  H01L2224/05644 ,  H01L2224/45015 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48177 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/48611 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48655 ,  H01L2224/48664 ,  H01L2224/48811 ,  H01L2224/48816 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/48855 ,  H01L2224/48864 ,  H01L2224/4903 ,  H01L2224/49111 ,  H01L2224/49176 ,  H01L2224/85205 ,  H01L2224/85207 ,  H01L2224/85411 ,  H01L2224/85416 ,  H01L2224/85444 ,  H01L2224/85455 ,  H01L2224/85464 ,  H01L2924/00011 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12033 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13051 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/1421 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/19105 ,  H01L2924/19107 ,  H01L2924/3011 ,  H01L2924/30111 ,  H01L2924/3025 ,  H03F1/565 ,  H03F3/187 ,  H03F3/19 ,  H03F3/195 ,  H03F3/21 ,  H03F3/213 ,  H03F3/245 ,  H03F3/347 ,  H03F3/45 ,  H03F3/60 ,  H03F2200/387 ,  H03F2200/451 ,  H03F2200/48 ,  H03F2200/555 ,  H01L2924/00 ,  H01L2924/00014

摘要： A power amplifier module includes a power amplifier including a GaAs bipolar transistor having a collector, a base abutting the collector, and an emitter, the collector having a doping concentration of at least about 3×1016 cm−3 at a junction with the base, the collector also having at least a first grading in which doping concentration increases away from the base; and an RF transmission line driven by the power amplifier, the RF transmission line including a conductive layer and finish plating on the conductive layer, the finish plating including a gold layer, a palladium layer proximate the gold layer, and a diffusion barrier layer proximate the palladium layer, the diffusion barrier layer including nickel and having a thickness that is less than about the skin depth of nickel at 0.9 GHz. Other embodiments of the module are provided along with related methods and components thereof.

摘要翻译： 功率放大器模块包括功率放大器，其包括具有集电极的GaAs双极晶体管，邻接集电极的基极和发射极，该集电极在与基极的连接处具有至少约3×1016cm-3的掺杂浓度， 所述收集器还具有至少第一分级，其中掺杂浓度从所述基底增加; 以及由功率放大器驱动的RF传输线，RF传输线包括在导电层上的导电层和精整电镀，精加工镀层包括金层，接近金层的钯层和靠近金层的扩散阻挡层 钯层，扩散阻挡层包括镍，并且其厚度小于0.9GHz处的镍的趋肤深度。 模块的其他实施例与其相关方法和组件一起提供。

公开(公告)号：US11973283B2

公开(公告)日：2024-04-30

申请号：US17249183

申请日：2021-02-23

申请人： Skyworks Solutions, Inc.

发明人： René Rodríguez ,  Dinhphuoc Vu Hoang ,  Hardik Bhupendra Modi

IPC分类号： H01Q9/04 ,  H01Q1/22 ,  H01Q9/28 ,  H01Q9/30 ,  H05K1/16

CPC分类号： H01Q9/30 ,  H01Q1/2266 ,  H01Q9/0442 ,  H01Q9/28 ,  H05K1/165 ,  H05K2201/1003

摘要： Reconfigurable antenna systems with ground tuning pads are provided herein. In certain configurations, an antenna system includes an antenna element, a first tuning conductor spaced apart from the antenna element on a first side of the antenna element, a second tuning conductor spaced apart from the antenna element on a second side of the antenna element, a first ground tuning pad configured to receive a ground voltage, and a first switch electrically connected between the first tuning conductor and the first ground tuning pad. The first switch is operable to selectively connect the first tuning conductor to the first ground tuning pad to thereby tune the antenna element.

公开(公告)号：US11785853B2

公开(公告)日：2023-10-10

申请号：US17346292

申请日：2021-06-13

申请人： SKYWORKS SOLUTIONS, INC.

发明人： Hardik Bhupendra Modi ,  Adarsh Karan Jaiswal ,  Anil K. Agarwal ,  Engin Ibrahim Pehlivanoglu

IPC分类号： H10N30/071 ,  H01L23/66 ,  H03H9/64 ,  H01L23/552 ,  H03F3/195 ,  H03H9/02

CPC分类号： H10N30/071 ,  H01L23/552 ,  H01L23/66 ,  H03F3/195 ,  H03H9/02976 ,  H03H9/6406 ,  H01L2223/6611 ,  H01L2223/6644 ,  H01L2223/6677 ,  H01L2224/32145 ,  H01L2224/48091 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2225/0651 ,  H01L2225/06517 ,  H01L2225/06537 ,  H01L2924/15313 ,  H01L2924/19042 ,  H01L2924/19105 ,  H01L2924/3025 ,  H03F2200/294 ,  H01L2224/48091 ,  H01L2924/00014

摘要： Stack assembly for radio-frequency applications. In some embodiments, a radio-frequency (RF) module can include a packaging substrate configured to receive a plurality of components, and an electro-acoustic device mounted on the packaging substrate. The RF module can further include a die having an integrated circuit and mounted over the electro-acoustic device to form a stack assembly. The electro-acoustic device can be, for example, a filter device such as a surface acoustic wave filter. The die can be, for example an amplifier die such as a low-noise amplifier implemented on a silicon die.