公开(公告)号：US07339184B2

公开(公告)日：2008-03-04

申请号：US11117707

申请日：2005-04-29

申请人： Linda T. Romano ,  Jian Chen ,  Xiangfeng Duan ,  Robert S. Dubrow ,  Stephen A. Empedocles ,  Jay L. Goldman ,  James M. Hamilton ,  David L. Heald ,  Francesco Lemmi ,  Chunming Niu ,  Yaoling Pan ,  George Pontis ,  Vijendra Sahi ,  Erik C. Scher ,  David P. Stumbo ,  Jeffery A. Whiteford

发明人： Linda T. Romano ,  Jian Chen ,  Xiangfeng Duan ,  Robert S. Dubrow ,  Stephen A. Empedocles ,  Jay L. Goldman ,  James M. Hamilton ,  David L. Heald ,  Francesco Lemmi ,  Chunming Niu ,  Yaoling Pan ,  George Pontis ,  Vijendra Sahi ,  Erik C. Scher ,  David P. Stumbo ,  Jeffery A. Whiteford

IPC分类号： H01L29/00

CPC分类号： C30B29/605 ,  B82Y10/00 ,  C30B11/12 ,  H01L21/02439 ,  H01L21/02513 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/02603 ,  H01L21/02606 ,  H01L21/02639 ,  H01L21/02645 ,  H01L21/02653 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/125 ,  H01L29/66469 ,  H01L29/775 ,  H01L29/78684 ,  H01L29/7869 ,  H01L29/78696 ,  H01L51/0048 ,  Y10S977/762 ,  Y10S977/938 ,  Y10T428/139 ,  Y10T428/2902 ,  Y10T428/2949

摘要： The present invention is directed to methods to harvest, integrate and exploit nanomaterials, and particularly elongated nanowire materials. The invention provides methods for harvesting nanowires that include selectively etching a sacrificial layer placed on a nanowire growth substrate to remove nanowires. The invention also provides methods for integrating nanowires into electronic devices that include placing an outer surface of a cylinder in contact with a fluid suspension of nanowires and rolling the nanowire coated cylinder to deposit nanowires onto a surface. Methods are also provided to deposit nanowires using an ink-jet printer or an aperture to align nanowires. Additional aspects of the invention provide methods for preventing gate shorts in nanowire based transistors. Additional methods for harvesting and integrating nanowires are provided.

摘要翻译： 本发明涉及收获，整合和利用纳米材料，特别是细长的纳米线材料的方法。 本发明提供了收获纳米线的方法，其包括选择性地蚀刻放置在纳米线生长衬底上以去除纳米线的牺牲层。 本发明还提供了将纳米线整合到电子器件中的方法，包括将圆筒的外表面与纳米线的流体悬浮液接触并滚动纳米线涂覆的圆筒以将纳米线沉积到表面上。 还提供了使用喷墨打印机或孔径以纳米线排列纳米线的方法。 本发明的另外的方面提供了用于防止基于纳米线的晶体管中的栅极短路的方法。 提供了收获和集成纳米线的其他方法。

公开(公告)号：US07233041B2

公开(公告)日：2007-06-19

申请号：US11490637

申请日：2006-07-21

申请人： Xiangfeng Duan ,  Chunming Niu ,  Stephen A. Empedocles ,  Linda T. Romano ,  Jian Chen ,  Vijendra Sahi ,  Lawrence A. Bock ,  David P. Stumbo ,  Parce J. Wallace ,  Jay L. Goldman

发明人： Xiangfeng Duan ,  Chunming Niu ,  Stephen A. Empedocles ,  Linda T. Romano ,  Jian Chen ,  Vijendra Sahi ,  Lawrence A. Bock ,  David P. Stumbo ,  Parce J. Wallace ,  Jay L. Goldman

IPC分类号： H01L27/108 ,  H01L29/76 ,  H01L29/94 ,  H01L31/119

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  H01F1/405 ,  H01L27/092 ,  H01L27/12 ,  H01L27/1292 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/78696 ,  H01L31/035281 ,  H01L33/18 ,  H01L33/20 ,  H01L33/24 ,  H01L51/0048 ,  H01L51/0504 ,  H01L51/0545 ,  H01L51/0595 ,  Y10S977/742 ,  Y10S977/762 ,  Y10S977/781 ,  Y10S977/789 ,  Y10S977/938

摘要： A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.

公开(公告)号：US07851841B2

公开(公告)日：2010-12-14

申请号：US11760382

申请日：2007-06-08

申请人： Xiangfeng Duan ,  Chunming Niu ,  Stephen A. Empedocles ,  Linda T. Romano ,  Jian Chen ,  Vijendra Sahi ,  Lawrence Bock ,  David P. Stumbo ,  J. Wallace Parce ,  Jay L. Goldman

发明人： Xiangfeng Duan ,  Chunming Niu ,  Stephen A. Empedocles ,  Linda T. Romano ,  Jian Chen ,  Vijendra Sahi ,  Lawrence Bock ,  David P. Stumbo ,  J. Wallace Parce ,  Jay L. Goldman

IPC分类号： H01L27/108 ,  H01L29/94

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  H01F1/405 ,  H01L27/092 ,  H01L27/12 ,  H01L27/1292 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/78696 ,  H01L31/035281 ,  H01L33/18 ,  H01L33/20 ,  H01L33/24 ,  H01L51/0048 ,  H01L51/0504 ,  H01L51/0545 ,  H01L51/0595 ,  Y10S977/742 ,  Y10S977/762 ,  Y10S977/781 ,  Y10S977/789 ,  Y10S977/938

摘要： A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.

摘要翻译： 描述了具有多个半导体器件的电子基片的方法和装置。 在衬底上形成纳米线薄膜。 纳米线的薄膜形成为具有足够的纳米线密度以达到工作电流水平。 在纳米线的薄膜中限定多个半导体区域。 在半导体器件区域处形成触点，从而提供与多个半导体器件的电连接。 此外，用于制造纳米线的各种材料，包括p掺杂纳米线和n掺杂纳米线的薄膜，纳米线异质结构，发光纳米线异质结构，用于在衬底上定位纳米线的流动掩模，用于沉积纳米线的纳米线喷涂技术，用于减少或消除声子的技术 描述了纳米线中的电子散射，以及用于降低纳米线中的表面状态的技术。

公开(公告)号：US20100261013A1

公开(公告)日：2010-10-14

申请号：US12820931

申请日：2010-06-22

申请人： Xiangfeng Duan ,  Chunming Niu ,  Stephen A. Empedocles ,  David P. Stumbo

发明人： Xiangfeng Duan ,  Chunming Niu ,  Stephen A. Empedocles ,  David P. Stumbo

IPC分类号： B32B17/02

CPC分类号： C30B29/605 ,  B82Y10/00 ,  C30B11/12 ,  H01L21/02439 ,  H01L21/02513 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/02603 ,  H01L21/02606 ,  H01L21/02639 ,  H01L21/02645 ,  H01L21/02653 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/125 ,  H01L29/66469 ,  H01L29/775 ,  H01L29/78684 ,  H01L29/7869 ,  H01L29/78696 ,  H01L51/0048 ,  Y10S977/762 ,  Y10S977/938 ,  Y10T428/139 ,  Y10T428/2902 ,  Y10T428/2949

摘要： The present invention is directed to methods to harvest, integrate and exploit nanomaterials, and particularly elongated nanowire materials. The invention provides methods for harvesting nanowires that include selectively etching a sacrificial layer placed on a nanowire growth substrate to remove nanowires. The invention also provides methods for integrating nanowires into electronic devices that include placing an outer surface of a cylinder in contact with a fluid suspension of nanowires and rolling the nanowire coated cylinder to deposit nanowires onto a surface. Methods are also provided to deposit nanowires using an ink-jet printer or an aperture to align nanowires. Additional aspects of the invention provide methods for preventing gate shorts in nanowire based transistors. Additional methods for harvesting and integrating nanowires are provided.

公开(公告)号：US07135728B2

公开(公告)日：2006-11-14

申请号：US11106340

申请日：2005-04-13

申请人： Xiangfeng Duan ,  Chunming Niu ,  Stephen A. Empedocles ,  Linda T. Romano ,  Jian Chen ,  Vijendra Sahi ,  Lawrence A. Bock ,  David P. Stumbo ,  Parce J. Wallace ,  Jay L. Goldman

发明人： Xiangfeng Duan ,  Chunming Niu ,  Stephen A. Empedocles ,  Linda T. Romano ,  Jian Chen ,  Vijendra Sahi ,  Lawrence A. Bock ,  David P. Stumbo ,  Parce J. Wallace ,  Jay L. Goldman

IPC分类号： H01L27/108 ,  H01L29/76 ,  H01L29/94 ,  H01L31/119

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  H01F1/405 ,  H01L27/092 ,  H01L27/12 ,  H01L27/1292 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/78696 ,  H01L31/035281 ,  H01L33/18 ,  H01L33/20 ,  H01L33/24 ,  H01L51/0048 ,  H01L51/0504 ,  H01L51/0545 ,  H01L51/0595 ,  Y10S977/742 ,  Y10S977/762 ,  Y10S977/781 ,  Y10S977/789 ,  Y10S977/938

摘要： A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.

公开(公告)号：US07083104B1

公开(公告)日：2006-08-01

申请号：US11226187

申请日：2005-09-14

申请人： Stephen A. Empedocles ,  David P. Stumbo ,  Chunming Niu ,  Xiangfeng Duan

发明人： Stephen A. Empedocles ,  David P. Stumbo ,  Chunming Niu ,  Xiangfeng Duan

IPC分类号： G06K19/06

CPC分类号： G11C13/025 ,  B82Y10/00 ,  G11C13/02 ,  G11C2213/16 ,  G11C2213/17 ,  G11C2213/18 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/42392 ,  H01L29/775 ,  H01L29/78696

摘要： Macroelectronic substrate materials incorporating nanowires are described. These are used to provide underlying electronic elements (e.g., transistors and the like) for a variety of different applications. Methods for making the macroelectronic substrate materials are disclosed. One application is for transmission an reception of RF signals in small, lightweight sensors. Such sensors can be configured in a distributed sensor network to provide security monitoring. Furthermore, a method and apparatus for a radio frequency identification (RFID) tag is described. The RFID tag includes an antenna and a beam-steering array. The beam-steering array includes a plurality of tunable elements. A method and apparatus for an acoustic cancellation device and for an adjustable phase shifter that are enabled by nanowires are also described.

公开(公告)号：US07427328B2

公开(公告)日：2008-09-23

申请号：US11602783

申请日：2006-11-21

申请人： Xiangfeng Duan ,  Chunming Niu ,  Stephen A. Empedocles ,  Linda T. Romano ,  Jian Chen ,  Vijendra Sahi ,  Lawrence A. Bock ,  David P. Stumbo ,  J. Wallace Parce ,  Jay L. Goldman

发明人： Xiangfeng Duan ,  Chunming Niu ,  Stephen A. Empedocles ,  Linda T. Romano ,  Jian Chen ,  Vijendra Sahi ,  Lawrence A. Bock ,  David P. Stumbo ,  J. Wallace Parce ,  Jay L. Goldman

IPC分类号： B05C5/00 ,  B05B7/00

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  H01F1/405 ,  H01L27/092 ,  H01L27/12 ,  H01L27/1292 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/78696 ,  H01L31/035281 ,  H01L33/18 ,  H01L33/20 ,  H01L33/24 ,  H01L51/0048 ,  H01L51/0504 ,  H01L51/0545 ,  H01L51/0595 ,  Y10S977/742 ,  Y10S977/762 ,  Y10S977/781 ,  Y10S977/789 ,  Y10S977/938

摘要： A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.

摘要翻译： 描述了具有多个半导体器件的电子基片的方法和装置。 在衬底上形成纳米线薄膜。 纳米线的薄膜形成为具有足够的纳米线密度以达到工作电流水平。 在纳米线的薄膜中限定多个半导体区域。 在半导体器件区域处形成触点，从而提供与多个半导体器件的电连接。 此外，用于制造纳米线的各种材料，包括p掺杂纳米线和n掺杂纳米线的薄膜，纳米线异质结构，发光纳米线异质结构，用于在衬底上定位纳米线的流动掩模，用于沉积纳米线的纳米线喷涂技术，用于减少或消除声子的技术 描述了纳米线中的电子散射，以及用于降低纳米线中的表面状态的技术。

公开(公告)号：US07951422B2

公开(公告)日：2011-05-31

申请号：US11641939

申请日：2006-12-20

申请人： Yaoling Pan ,  Xiangfeng Duan ,  Robert S. Dubrow ,  Jay Goldman ,  Shahriar Mostarshed ,  Chunming Niu ,  Linda T. Romano ,  David P. Stumbo ,  Alice Fischer-Colbrie ,  Vijendra Sahi ,  Virginia Robbins

发明人： Yaoling Pan ,  Xiangfeng Duan ,  Robert S. Dubrow ,  Jay Goldman ,  Shahriar Mostarshed ,  Chunming Niu ,  Linda T. Romano ,  David P. Stumbo ,  Alice Fischer-Colbrie ,  Vijendra Sahi ,  Virginia Robbins

IPC分类号： C23C16/00

CPC分类号： C30B29/605 ,  B82Y30/00 ,  C30B11/12 ,  C30B29/06 ,  Y10T428/24917

摘要： The present invention is directed to systems and methods for nanowire growth and harvesting. In an embodiment, methods for nanowire growth and doping are provided, including methods for epitaxial oriented nanowire growth using a combination of silicon precursors, as well as us of patterned substrates to grow oriented nanowires. In a further aspect of the invention, methods to improve nanowire quality through the use of sacrifical growth layers are provided. In another aspect of the invention, methods for transferring nanowires from one substrate to another substrate are provided.

摘要翻译： 本发明涉及用于纳米线生长和收获的系统和方法。 在一个实施例中，提供了用于纳米线生长和掺杂的方法，包括使用硅前体的组合的外延取向纳米线生长的方法，以及我们用于生长取向的纳米线的图案化衬底。 在本发明的另一方面，提供了通过使用牺牲生长层来提高纳米线质量的方法。 在本发明的另一方面，提供了将纳米线从一个衬底转移到另一个衬底的方法。

公开(公告)号：US07064372B2

公开(公告)日：2006-06-20

申请号：US11004380

申请日：2004-12-03

申请人： Xiangfeng Duan ,  Chunming Niu ,  Stephen Empedocles ,  Linda T. Romano ,  Jian Chen ,  Vijendra Sahi ,  Lawrence A. Bock ,  David P. Stumbo ,  J. Wallace Parce ,  Jay L. Goldman

发明人： Xiangfeng Duan ,  Chunming Niu ,  Stephen Empedocles ,  Linda T. Romano ,  Jian Chen ,  Vijendra Sahi ,  Lawrence A. Bock ,  David P. Stumbo ,  J. Wallace Parce ,  Jay L. Goldman

IPC分类号： H01L27/108 ,  H01L29/94 ,  H01L29/76

CPC分类号： H01L29/78696 ,  B82Y10/00 ,  G11C13/025 ,  G11C2213/17 ,  G11C2213/18 ,  H01L24/95 ,  H01L27/1292 ,  H01L29/04 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/78684 ,  H01L29/7869 ,  H01L33/20 ,  H01L51/0048 ,  H01L51/0052 ,  H01L51/0541 ,  H01L51/0545 ,  H01L2924/12032 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/00

摘要： A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.

公开(公告)号：US07595528B2

公开(公告)日：2009-09-29

申请号：US11018572

申请日：2004-12-21

申请人： Xiangfeng Duan ,  Calvin Y. H. Chow ,  David L. Heald ,  Chunming Niu ,  J. Wallace Parce ,  David P. Stumbo

发明人： Xiangfeng Duan ,  Calvin Y. H. Chow ,  David L. Heald ,  Chunming Niu ,  J. Wallace Parce ,  David P. Stumbo

IPC分类号： H01L29/788

CPC分类号： G11C11/56 ,  B82Y10/00 ,  G03G5/00 ,  G03G5/02 ,  G03G5/04 ,  G03G5/043 ,  G03G5/08 ,  G03G5/082 ,  G03G5/08214 ,  G11C13/02 ,  G11C13/025 ,  G11C2213/17 ,  G11C2213/18 ,  G11C2216/08 ,  H01L21/28273 ,  H01L21/28282 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/42332 ,  H01L29/7881 ,  H01L29/7887 ,  Y10S977/936 ,  Y10S977/943

摘要： Methods and apparatuses for nanoenabled memory devices and anisotropic charge carrying arrays are described. In an aspect, a memory device includes a substrate, a source region of the substrate, and a drain region of the substrate. A population of nanoelements is deposited on the substrate above a channel region, the population of nanolements in one embodiment including metal quantum dots. A tunnel dielectric layer is formed on the substrate overlying the channel region, and a metal migration barrier layer is deposited over the dielectric layer. A gate contact is formed over the thin film of nanoelements. The nanoelements allow for reduced lateral charge transfer. The memory device may be a single or multistate memory device. In a multistate memory device which comprises one or more quantum dots or molecules having a plurality of discrete energy levels, a method is disclosed for charging and/or discharging the device which comprises filling each of the plurality of discrete energy levels of each dot or molecule with one or more electrons, and subsequently removing individual electrons at a time from each discrete energy level of the one or more dots or molecules.

摘要翻译： 描述了用于纳米存储器件和各向异性带电载体阵列的方法和装置。 在一方面，存储器件包括衬底，衬底的源极区域和衬底的漏极区域。 纳米元素的群体沉积在通道区域上方的衬底上，在一个实施方案中纳米的群体包括金属量子点。 隧道介电层形成在覆盖沟道区的衬底上，金属迁移势垒层沉积在电介质层上。 在纳米元件的薄膜上形成栅极接触。 纳米元件允许减少横向电荷转移。 存储器件可以是单个或多个存储器件。 在包括具有多个离散能级的一个或多个量子点或分子的多状态存储器件中，公开了一种用于对该器件进行充电和/或放电的方法，该方法包括填充每个点或分子的多个离散能级中的每一个 与一个或多个电子，并随后从一个或多个点或分子的每个离散能级一次去除单个电子。