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    Wet Etching Methods for Copper Removal and Planarization in Semiconductor Processing
    2.
    发明申请
    Wet Etching Methods for Copper Removal and Planarization in Semiconductor Processing 失效
    半导体加工中铜去除和平面化的湿蚀刻方法

    公开(公告)号：US20100015805A1

    公开(公告)日：2010-01-21

    申请号：US12535594

    申请日：2009-08-04

    Applicant: Steven T. Mayer ,  Eric Webb ,  David W. Porter

    Inventor： Steven T. Mayer ,  Eric Webb ,  David W. Porter

    IPC: H01L21/304 ,  H01L21/306

    CPC classification number: C23F1/18 ,  C23F1/02 ,  C23F1/34 ,  C23F3/04 ,  C25D5/48 ,  C25D7/123 ,  C25D17/001 ,  H01L21/02074 ,  H01L21/288 ,  H01L21/32115 ,  H01L21/32134 ,  H01L21/67051 ,  H01L21/6708 ,  H01L21/76849 ,  H01L21/76856 ,  H01L21/76858 ,  H01L21/76883 ,  H01L21/76898 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: Exposed copper regions on a semiconductor substrate can be etched by a wet etching solution comprising (i) one or more complexing agents selected from the group consisting of bidentate, tridentate, and quadridentate complexing agents; and (ii) an oxidizer, at a pH of between about 5 and 12. In many embodiments, the etching is substantially isotropic and occurs without visible formation of insoluble species on the surface of copper. The etching is useful in a number of processes in semiconductor fabrication, including for partial or complete removal of copper overburden, for planarization of copper surfaces, and for forming recesses in copper-filled damascene features. Examples of suitable etching solutions include solutions comprising a diamine (e.g., ethylenediamine) and/or a triamine (e.g., diethylenetriamine) as bidentate and tridentate complexing agents respectively and hydrogen peroxide as an oxidizer. In some embodiments, the etching solutions further include pH adjustors, such as sulfuric acid, aminoacids, and carboxylic acids.

    Abstract translation: 可以通过湿式蚀刻溶液蚀刻半导体衬底上的暴露的铜区域，所述湿蚀刻溶液包含（i）一种或多种选自二齿，三齿和四齿络合剂的络合剂; 和（ii）pH在约5和12之间的氧化剂。在许多实施方案中，蚀刻基本上是各向同性的，并且在铜的表面上没有可见的不可见物质形成。 该蚀刻在半导体制造中的许多工艺中是有用的，包括部分或全部去除铜覆盖层，用于铜表面的平坦化，以及用于在铜填充的镶嵌特征中形成凹陷。 合适的蚀刻溶液的实例包括分别作为二齿和三齿络合剂的二胺（例如乙二胺）和/或三胺（例如二亚乙基三胺）和作为氧化剂的过氧化氢的溶液。 在一些实施方案中，蚀刻溶液还包括pH调节剂，例如硫酸，氨基酸和羧酸。

    Modulated metal removal using localized wet etching
    4.
    发明授权
    Modulated metal removal using localized wet etching 有权
    使用局部湿蚀刻调制金属去除

    公开(公告)号：US08530359B2

    公开(公告)日：2013-09-10

    申请号：US12462424

    申请日：2009-08-04

    Applicant: Steven T. Mayer ,  David W. Porter

    Inventor： Steven T. Mayer ,  David W. Porter

    IPC: H01I21/302

    CPC classification number: H01L21/6708 ,  C23F1/08 ,  C23F1/34 ,  C25F3/12 ,  H01L21/32115 ,  H01L21/32134

    Abstract: An apparatus for wet etching metal from a semiconductor wafer comprises a wafer holder for rotating a wafer and a plurality of nozzles for applying separate flow patterns of etching liquid to the surface of the wafer. The flow patterns impact the wafer in distinct band-like impact zones. The flow pattern of etching liquid from at least one nozzle is modulated during a total etching time control the cumulative etching rate in one local etch region relative to the cumulative etching rate in one or more other local etch regions. Some embodiments include a lower etch chamber and an upper rinse chamber separated by a horizontal splash shield. Some embodiments include a retractable vertical splash shield used to prevent splashing of etching liquid onto the inside walls of a treatment container. An etch-liquid delivery system includes a plurality of nozzle flow paths having corresponding nozzle flow resistances, and a plurality of drain flow paths having corresponding drain flow resistances. Nozzle flow resistances and drain flow resistances are matched so that switching the flow from a nozzle to a corresponding drain flow path does not change the flow rate of etching liquid through other nozzles. A non-wafer-contacting measuring device measures a metal thickness on a rotating semiconductor wafer during metal wet etching by immersing a plurality of electrodes in etching liquid in close proximity to the wafer surface of the rotating wafer and determining electrical resistance between a plurality of electrodes.

    Abstract translation: 用于从半导体晶片湿式蚀刻金属的设备包括用于旋转晶片的晶片保持器和用于将分离的蚀刻液体的流动图案施加到晶片的表面的多个喷嘴。 流动模式影响晶片在不同的带状冲击区域。 在总腐蚀时间期间，调制来自至少一个喷嘴的蚀刻液体的流动模式，以控制一个局部蚀刻区域中相对于一个或多个其它局部蚀刻区域中的累积蚀刻速率的累积蚀刻速率。 一些实施例包括由水平防溅罩隔开的下蚀刻室和上冲洗室。 一些实施例包括用于防止蚀刻液体溅射到处理容器的内壁上的可伸缩垂直防溅屏蔽。 蚀刻液输送系统包括具有相应的喷嘴流动阻力的多个喷嘴流动路径和具有相应的漏极流动阻力的多个排出流动路径。 喷嘴流阻和排流阻力匹配，使得从喷嘴到相应的排水流路的流动不会改变通过其它喷嘴的蚀刻液的流量。 非晶片接触测量装置通过将多个电极浸入在旋转晶片的晶片表面附近的蚀刻液中来测量金属湿蚀刻期间的旋转半导体晶片上的金属厚度，并且确定多个电极之间的电阻 。

    Electroplating apparatus and process for wafer level packaging
    9.
    发明授权
    Electroplating apparatus and process for wafer level packaging 有权
    电镀设备及晶圆级封装工艺

    公开(公告)号：US09404194B2

    公开(公告)日：2016-08-02

    申请号：US13305384

    申请日：2011-11-28

    Applicant: Steven T. Mayer ,  David W. Porter

    Inventor： Steven T. Mayer ,  David W. Porter

    IPC: C25D21/12 ,  C25D21/14 ,  C25D21/18 ,  C25D7/12 ,  C25D3/60 ,  C25D17/00 ,  C25D3/56 ,  C25D5/02 ,  C25C1/20 ,  C25C7/00

    CPC classification number: C25D3/60 ,  C25C1/20 ,  C25C7/00 ,  C25D3/56 ,  C25D5/022 ,  C25D5/48 ,  C25D7/123 ,  C25D17/001 ,  C25D17/002 ,  C25D21/12 ,  C25D21/14 ,  C25D21/18

    Abstract: An apparatus for continuous simultaneous electroplating of two metals having substantially different standard electrodeposition potentials (e.g., for deposition of Sn—Ag alloys) comprises an anode chamber for containing an anolyte comprising ions of a first, less noble metal, (e.g., tin), but not of a second, more noble, metal (e.g., silver) and an active anode; a cathode chamber for containing catholyte including ions of a first metal (e.g., tin), ions of a second, more noble, metal (e.g., silver), and the substrate; a separation structure positioned between the anode chamber and the cathode chamber, where the separation structure substantially prevents transfer of more noble metal from catholyte to the anolyte; and fluidic features and an associated controller coupled to the apparatus and configured to perform continuous electroplating, while maintaining substantially constant concentrations of plating bath components for extended periods of use.

    Abstract translation: 用于连续同时电镀具有基本上不同的标准电沉积电位（例如，用于沉积Sn-Ag合金）的两种金属的装置包括阳极室，用于容纳包含第一少量贵金属（例如锡）的离子的阳极电解液， 但不是第二个，更高贵的金属（例如银）和活性阳极; 阴极室，用于容纳包含第一金属（例如锡）的离子，第二，更贵金属（例如银）的离子和底物的阴极电解液; 位于阳极室和阴极室之间的分离结构，其中分离结构基本上防止更贵族金属从阴极电解液转移到阳极电解液; 流体特征和相关联的控制器，其耦合到所述装置并且被配置为执行连续电镀，同时在延长的使用期限内保持基本恒定的电镀浴组分的浓度。

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