中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

153 records (took 0.037 seconds)

    Wet Etching Methods for Copper Removal and Planarization in Semiconductor Processing
    2.
    发明申请
    Wet Etching Methods for Copper Removal and Planarization in Semiconductor Processing 失效
    半导体加工中铜去除和平面化的湿蚀刻方法

    公开(公告)号：US20100015805A1

    公开(公告)日：2010-01-21

    申请号：US12535594

    申请日：2009-08-04

    Applicant: Steven T. Mayer ,  Eric Webb ,  David W. Porter

    Inventor： Steven T. Mayer ,  Eric Webb ,  David W. Porter

    IPC: H01L21/304 ,  H01L21/306

    CPC classification number: C23F1/18 ,  C23F1/02 ,  C23F1/34 ,  C23F3/04 ,  C25D5/48 ,  C25D7/123 ,  C25D17/001 ,  H01L21/02074 ,  H01L21/288 ,  H01L21/32115 ,  H01L21/32134 ,  H01L21/67051 ,  H01L21/6708 ,  H01L21/76849 ,  H01L21/76856 ,  H01L21/76858 ,  H01L21/76883 ,  H01L21/76898 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: Exposed copper regions on a semiconductor substrate can be etched by a wet etching solution comprising (i) one or more complexing agents selected from the group consisting of bidentate, tridentate, and quadridentate complexing agents; and (ii) an oxidizer, at a pH of between about 5 and 12. In many embodiments, the etching is substantially isotropic and occurs without visible formation of insoluble species on the surface of copper. The etching is useful in a number of processes in semiconductor fabrication, including for partial or complete removal of copper overburden, for planarization of copper surfaces, and for forming recesses in copper-filled damascene features. Examples of suitable etching solutions include solutions comprising a diamine (e.g., ethylenediamine) and/or a triamine (e.g., diethylenetriamine) as bidentate and tridentate complexing agents respectively and hydrogen peroxide as an oxidizer. In some embodiments, the etching solutions further include pH adjustors, such as sulfuric acid, aminoacids, and carboxylic acids.

    Abstract translation: 可以通过湿式蚀刻溶液蚀刻半导体衬底上的暴露的铜区域，所述湿蚀刻溶液包含（i）一种或多种选自二齿，三齿和四齿络合剂的络合剂; 和（ii）pH在约5和12之间的氧化剂。在许多实施方案中，蚀刻基本上是各向同性的，并且在铜的表面上没有可见的不可见物质形成。 该蚀刻在半导体制造中的许多工艺中是有用的，包括部分或全部去除铜覆盖层，用于铜表面的平坦化，以及用于在铜填充的镶嵌特征中形成凹陷。 合适的蚀刻溶液的实例包括分别作为二齿和三齿络合剂的二胺（例如乙二胺）和/或三胺（例如二亚乙基三胺）和作为氧化剂的过氧化氢的溶液。 在一些实施方案中，蚀刻溶液还包括pH调节剂，例如硫酸，氨基酸和羧酸。

    Electroplating apparatus for tailored uniformity profile
    3.
    发明授权
    Electroplating apparatus for tailored uniformity profile 有权
    用于定制均匀性曲线的电镀设备

    公开(公告)号：US08858774B2

    公开(公告)日：2014-10-14

    申请号：US13438443

    申请日：2012-04-03

    Applicant: Steven T. Mayer ,  David W. Porter ,  Bryan L. Buckalew ,  Robert Rash

    Inventor： Steven T. Mayer ,  David W. Porter ,  Bryan L. Buckalew ,  Robert Rash

    IPC: C25D17/00 ,  C25D21/12 ,  C25D7/12 ,  C25D5/18 ,  H01L21/288 ,  C25D17/12 ,  C25D21/10 ,  H01L21/768

    CPC classification number: C25D5/00 ,  C25D5/04 ,  C25D5/18 ,  C25D7/123 ,  C25D17/001 ,  C25D17/002 ,  C25D17/007 ,  C25D17/008 ,  C25D17/06 ,  C25D17/12 ,  C25D21/10 ,  C25D21/12 ,  H01L21/2885 ,  H01L21/76873

    Abstract: Methods of electroplating metal on a substrate while controlling azimuthal uniformity, include, in one aspect, providing the substrate to the electroplating apparatus configured for rotating the substrate during electroplating, and electroplating the metal on the substrate while rotating the substrate relative to a shield such that a selected portion of the substrate at a selected azimuthal position dwells in a shielded area for a different amount of time than a second portion of the substrate having the same average arc length and the same average radial position and residing at a different angular (azimuthal) position. For example, a semiconductor wafer substrate can be rotated during electroplating slower or faster, when the selected portion of the substrate passes through the shielded area.

    Abstract translation: 在一方面，在控制方位均匀性的同时，在基板上电镀金属的方法包括在电镀期间为电镀设备提供基板，该电镀设备被配置为在电镀期间旋转基板，以及在将基板相对于屏蔽件旋转的同时使金属电镀， 在选择的方位角位置的衬底的选定部分在屏蔽区域中停留不同于具有相同平均弧长和相同平均径向位置并且位于不同角度（方位角）处的基底的第二部分的时间量， 位置。 例如，当基板的选定部分通过屏蔽区域时，半导体晶片基板可以在电镀期间更快或更快地旋转。

    Electroplating apparatus and process for wafer level packaging
    7.
    发明授权
    Electroplating apparatus and process for wafer level packaging 有权
    电镀设备及晶圆级封装工艺

    公开(公告)号：US09404194B2

    公开(公告)日：2016-08-02

    申请号：US13305384

    申请日：2011-11-28

    Applicant: Steven T. Mayer ,  David W. Porter

    Inventor： Steven T. Mayer ,  David W. Porter

    IPC: C25D21/12 ,  C25D21/14 ,  C25D21/18 ,  C25D7/12 ,  C25D3/60 ,  C25D17/00 ,  C25D3/56 ,  C25D5/02 ,  C25C1/20 ,  C25C7/00

    CPC classification number: C25D3/60 ,  C25C1/20 ,  C25C7/00 ,  C25D3/56 ,  C25D5/022 ,  C25D5/48 ,  C25D7/123 ,  C25D17/001 ,  C25D17/002 ,  C25D21/12 ,  C25D21/14 ,  C25D21/18

    Abstract: An apparatus for continuous simultaneous electroplating of two metals having substantially different standard electrodeposition potentials (e.g., for deposition of Sn—Ag alloys) comprises an anode chamber for containing an anolyte comprising ions of a first, less noble metal, (e.g., tin), but not of a second, more noble, metal (e.g., silver) and an active anode; a cathode chamber for containing catholyte including ions of a first metal (e.g., tin), ions of a second, more noble, metal (e.g., silver), and the substrate; a separation structure positioned between the anode chamber and the cathode chamber, where the separation structure substantially prevents transfer of more noble metal from catholyte to the anolyte; and fluidic features and an associated controller coupled to the apparatus and configured to perform continuous electroplating, while maintaining substantially constant concentrations of plating bath components for extended periods of use.

    Abstract translation: 用于连续同时电镀具有基本上不同的标准电沉积电位（例如，用于沉积Sn-Ag合金）的两种金属的装置包括阳极室，用于容纳包含第一少量贵金属（例如锡）的离子的阳极电解液， 但不是第二个，更高贵的金属（例如银）和活性阳极; 阴极室，用于容纳包含第一金属（例如锡）的离子，第二，更贵金属（例如银）的离子和底物的阴极电解液; 位于阳极室和阴极室之间的分离结构，其中分离结构基本上防止更贵族金属从阴极电解液转移到阳极电解液; 流体特征和相关联的控制器，其耦合到所述装置并且被配置为执行连续电镀，同时在延长的使用期限内保持基本恒定的电镀浴组分的浓度。

    REDUCED ISOTROPIC ETCHANT MATERIAL CONSUMPTION AND WASTE GENERATION
    10.
    发明申请
    REDUCED ISOTROPIC ETCHANT MATERIAL CONSUMPTION AND WASTE GENERATION 有权
    减少等温蚀刻材料消耗和废物产生

    公开(公告)号：US20110056913A1

    公开(公告)日：2011-03-10

    申请号：US12871662

    申请日：2010-08-30

    Applicant: Steven T. Mayer ,  David W. Porter

    Inventor： Steven T. Mayer ,  David W. Porter

    IPC: C23F1/46 ,  C23F1/08 ,  C23F1/00

    CPC classification number: C23F1/46 ,  C23F1/08 ,  C23F1/34 ,  C25C7/00 ,  H01L21/30604 ,  H01L21/32134 ,  H01L21/67017 ,  H01L21/67051

    Abstract: Methods and apparatus for isotropically etching a metal from a work piece, while recovering and reconstituting the chemical etchant are described. Various embodiments include apparatus and methods for etching where the recovered and reconstituted etchant is reused in a continuous loop recirculation scheme. Steady state conditions can be achieved where these processes are repeated over and over with occasional bleed and feed to replenish reagents and/or adjust parameters such as pH, ionic strength, salinity and the like.

    Abstract translation: 描述了在回收和重构化学蚀刻剂的同时从工件各向同性蚀刻金属的方法和装置。 各种实施例包括用于蚀刻的装置和方法，其中回收和重构的蚀刻剂以连续循环再循环方案重复使用。 可以实现稳定状态条件，其中这些方法反复反复，偶尔出血和进料以补充试剂和/或调节诸如pH，离子强度，盐度等参数。

Patent Agency Ranking