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公开(公告)号：US5006917A
公开(公告)日：1991-04-09
申请号：US398799
申请日：1989-08-25
IPC分类号： B23K20/02 , B23K20/233 , B23K33/00 , H01L21/60 , H01L21/603
CPC分类号： H01L24/80 , B23K20/023 , B23K20/233 , B23K33/00 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01057 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01087 , H01L2924/01327 , H01L2924/10253 , H01L2924/12042 , H01L2924/14
摘要： A contact member for thermocompression bonding in integrated circuit packaging has on a conductor end a uniform texture deformable layer with a hardness value in the range of that of soft gold which is approximately 90 on the Knoop scale and with a rough surface morphology having ridges with approximately 1 micrometer modulation frequency and a depth between ridges of from 1/4 to 1/2 that of the average integrated circuit pad. The deformable layer is produced by plating gold in a strong electronegative plating bath within a range of 0.03 to 0.05 mA/sq.cm. current density. Plating apparatus, for plating different areas, with different electronegative conditions, with separate independently powered anodes, is provided.
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公开(公告)号：US5242569A
公开(公告)日：1993-09-07
申请号：US664399
申请日：1991-03-04
IPC分类号： B23K20/02 , B23K20/233 , B23K33/00 , H01L21/603
CPC分类号： H01L24/80 , B23K20/023 , B23K20/233 , B23K33/00 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/10253 , H01L2924/12042 , H01L2924/14
摘要： A contact member for thermocompression bonding in integrated circuit packaging has on a conductor end a uniform texture deformable layer with a hardness value in the range of that of soft gold which is approximately 90 on the Knoop scale and with a rough surface morphology having ridges with approximately 1 micrometer modulation frequency and a depth between ridges of from 1/4 to 1/2 that of the average integrated circuit pad. The deformable layer is produced by plating gold in a strong electronegative plating bath within a range of 0.03 to 0.05 mA/sq.mm. current density. Plating apparatus, for plating different areas, with different electronegative conditions, with separate independently powered anodes, is provided.
摘要翻译： 用于集成电路封装中的热压接的接触构件在导体端具有均匀的织构可变形层，硬度值在Knoop尺度上大约为90的软金的范围内，粗糙的表面形态具有大约 1微米调制频率和脊之间的深度为平均集成电路板的1/4至1/2。 可变形层通过在0.03-0.05mA / sq.mm的强电负极电镀浴中镀金而制成。 当前密度。 提供用于电镀不同区域的电镀装置，具有不同的电负性条件，具有单独的独立供电的阳极。
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公开(公告)号：US5120418A
公开(公告)日：1992-06-09
申请号：US664388
申请日：1991-03-04
IPC分类号： B23K20/02 , B23K20/233 , B23K33/00 , H01L21/603
CPC分类号： H01L24/80 , B23K20/023 , B23K20/233 , B23K33/00 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/10253 , H01L2924/12042 , H01L2924/14
摘要： A contact member for thermocompression bonding in integrated circuit packaging has on a conductor end a uniform texture deformable layer with a hardness value in the range of that of soft gold which is approximately 90 on the Knoop scale and with a rough surface morphology having ridges with approximately 1 micrometer modulation frequency and a depth between ridges of from 1/4 to 1/2 that of the average integrated circuit pad. The deformable layer is produced by plating gold in a strong electronegative plating bath within a range of 0.03 to 0.05 mA/sq.cm. current density. Plating apparatus, for plating different areas, with different electronegative conditions, with separatre independently powered anodes, is provided.
摘要翻译： 用于集成电路封装中的热压接的接触构件在导体端具有均匀的织构可变形层，硬度值在Knoop尺度上大约为90的软金的范围内，粗糙的表面形态具有大约 1微米调制频率和脊之间的深度为平均集成电路板的1/4至1/2。 可变形层通过在0.03-0.05mA / sq.cm范围内的强电负电镀浴中镀金而制成。 当前密度。 提供了用于电镀不同区域的电镀装置，具有不同的电负性条件，具有独立供电的阳极。
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公开(公告)号：US5135155A
公开(公告)日：1992-08-04
申请号：US664359
申请日：1991-03-04
IPC分类号： B23K20/02 , B23K20/233 , B23K33/00 , H01L21/603
CPC分类号： H01L24/80 , B23K20/023 , B23K20/233 , B23K33/00 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/10253 , H01L2924/12042 , H01L2924/14
摘要： A contact member for thermocompression bonding in integrated circuit packaging has on a conductor end a uniform texture deformable layer with a hardness value in the range of that of soft gold which is approximately 90 on the Knoop scale and with a rough surface morphology having ridges with approximately 1 micrometer modulation frequency and a depth between ridges of from 1/4 to 1/2 that of the average integrated circuit pad. The deformable layer is produced by plating gold in a strong electronegative plating bath within a range of 0.03 to 0.05 mA/sq.mm. current density. Plating apparatus, for plating different areas, with different electronegative conditions, with separate independently powered anodes, is provided.
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公开(公告)号：US5148261A
公开(公告)日：1992-09-15
申请号：US646413
申请日：1991-01-28
IPC分类号： B23K20/02 , B23K20/233 , B23K33/00 , H01L21/603
CPC分类号： H01L24/80 , B23K20/023 , B23K20/233 , B23K33/00 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/10253 , H01L2924/12042 , H01L2924/14 , Y10T428/12438
摘要： A contact member for thermocompression bonding in integrated circuit packaging has on a conductor end a uniform texture deformable layer with a hardness value in the range of that of soft gold which is approximately 90 on the Knoop scale and with a rough surface morphology having ridges with approximately 1 micrometer modulation frequency and a depth between ridges of from 1/4 to 1/2 that of the average integrated circuit pad. The deformable layer is produced by plating gold in a strong electronegative plating bath within a range of 0.03 to 0.05 mA/sq.mm. current density. Plating apparatus, for plating different areas, with different electronegative conditions, with separate independently powered anodes, is provided.
摘要翻译： 用于集成电路封装中的热压接的接触构件在导体端具有均匀的织构可变形层，硬度值在Knoop尺度上大约为90的软金的范围内，粗糙的表面形态具有大约 1微米调制频率和脊之间的深度为平均集成电路板的1/4至1/2。 可变形层通过在0.03-0.05mA / sq.mm的强电负极电镀浴中镀金而制成。 当前密度。 提供用于电镀不同区域的电镀装置，具有不同的电负性条件，具有单独的独立供电的阳极。
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6.发明授权Aluminum bump, reworkable bump, and titanium nitride structure for tab bonding 失效铝凸块，可重复工作的凸块和用于接头接合的氮化钛结构
公开(公告)号：US5134460A
公开(公告)日：1992-07-28
申请号：US609057
申请日：1990-11-02
申请人： Michael J. Brady , Sung K. Kang , Paul A. Moskowitz , James G. Ryan , Timothy C. Reiley , Erick G. Walton , Harry R. Bickford , Michael J. Palmer
发明人： Michael J. Brady , Sung K. Kang , Paul A. Moskowitz , James G. Ryan , Timothy C. Reiley , Erick G. Walton , Harry R. Bickford , Michael J. Palmer
IPC分类号： H01L21/60 , H01L23/485
CPC分类号： H01L24/86 , H01L24/10 , H01L24/13 , H01L2224/13 , H01L2224/13099 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01015 , H01L2924/0102 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01025 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01042 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/01327 , H01L2924/014 , H01L2924/04941 , H01L2924/14 , Y10S257/915
摘要： A semiconductor chip carrying integrated circuits has lead lines terminating in conductive terminal pads exposed to the exterior through openings in a passivation layer. The pads include pedestals or bumps extending up from them. Each of the pedestals includes a thin metallic adhesion layer deposited on the pad. A thick metallic layer of aluminum or an alloy of aluminum is deposited upon said thin metallic adhesion layer. The thick metallic layer includes at least one metal selected from the group consisting of aluminum, aluminum plus a small percentage of Cu, Ni, Si, or Fe. Several other alternative metals can be added to aluminum to form an alloy. The thick metallic layer forms the bulk of the height of the pedestal. An adhesion layer is deposited on the bump of aluminum composed of a thin film of titanium or chromium. A barrier layer is deposited on the adhesion layer composed of copper, nickel, platinum, palladium or cobalt. A noble metal consisting of gold, palladium, or platinum is deposited on the barrier layer. In a variation of the top surface, a thick cap of a reworkable bonding metal is deposited above the metallic bump as the top surface of said bump. The bump can be composed of a number of metals such as gold, copper, nickel and aluminum in this case with aluminum being preferred. In place of the adhesion and barrier metals one can employ a layer of titanium nitride deposited on said thick layer of metal.
摘要翻译： 携带集成电路的半导体芯片具有终端于通过钝化层中的开口暴露于外部的导电端子焊盘中的导线。 垫片包括从它们向上延伸的基座或凸块。 每个基座包括沉积在垫上的薄金属粘附层。 铝的厚金属层或铝合金沉积在所述薄金属粘合层上。 厚金属层包括选自铝，铝和小百分比的Cu，Ni，Si或Fe中的至少一种金属。 可以将几种其它替代金属加入到铝中以形成合金。 厚的金属层形成基座的高度的大部分。 粘合层沉积在由钛或铬的薄膜构成的铝凸块上。 阻挡层沉积在由铜，镍，铂，钯或钴组成的粘合层上。 由金，钯或铂组成的贵金属沉积在阻挡层上。 在顶表面的变型中，可再加工的粘合金属的厚盖被沉积在金属凸块上方作为所述凸块的顶表面。 凸起可以由许多金属如金，铜，镍和铝组成，在这种情况下，优选铝。 代替粘合和阻挡金属，可以使用沉积在所述厚金属层上的氮化钛层。
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7.发明授权Method and process for reducing undercooling in a lead-free tin-rich solder alloy 失效在无铅富锡焊料合金中减少过冷的方法和工艺公开(公告)号：US07703661B2
公开(公告)日：2010-04-27
申请号：US11752382
申请日：2007-05-23
申请人： Gareth G. Hougham , Kamalesh K. Srivastava , Sung K. Kang , Da-Yuan Shih , Brian R. Sundlof , S. Jay Chey , Donald W. Henderson , David R. Di Milia , Richard P. Ferlita , Roy A. Carruthers
发明人： Gareth G. Hougham , Kamalesh K. Srivastava , Sung K. Kang , Da-Yuan Shih , Brian R. Sundlof , S. Jay Chey , Donald W. Henderson , David R. Di Milia , Richard P. Ferlita , Roy A. Carruthers
IPC分类号： B23K35/24
CPC分类号： B23K1/19 , B23K35/262 , H05K3/3436 , H05K3/3463 , H05K2201/0215
摘要： Briefly, a novel material process is disclosed wherein one or more nucleation modifiers are added, in trace amounts, to a lead-free tin-rich solder alloy to produce a solder composition with reduced or suppressed undercooling temperature characteristics. The modifier being a substance which facilitates the reduction of extreme anisotropic properties associated with body-centered-tetragonal tin based lead-free solder. The addition of the nucleation modifiers to the solder alloy does not materially effect the solder composition's melting point. As such, balls of solder with the nucleated composition freeze while other solder balls within the array remain in the melt. This effectively enables one substrate to be pinned to another substrate by one or more predetermined solder balls to secure the package while the remaining solder joints are in the liquid state.
摘要翻译： 简而言之，公开了一种新颖的材料方法，其中将一种或多种成核改性剂以痕量添加到无铅富锡焊料合金中以产生具有降低或抑制的过冷却温度特性的焊料组合物。 该改性剂是有助于减少与体心四方锡锡基无铅焊料相关的极端各向异性的物质。 将成核改性剂添加到焊料合金中不会实质上影响焊料组合物的熔点。 因此，具有成核组合物的焊料球冻结，而阵列内的其它焊球保持在熔体中。 这有效地使一个基板通过一个或多个预定的焊球被固定到另一个基板，以固定封装，而剩余的焊点处于液态。
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8.发明申请公开(公告)号：US20080290142A1
公开(公告)日：2008-11-27
申请号：US11752382
申请日：2007-05-23
申请人： Gareth G. Hougham , Kamalesh K. Srivastava , Sung K. Kang , Da-Yuan Shih , Brian R. Sundlof , S. Jay Chey , Donald W. Henderson , David R. Di Milia , Richard P. Ferlita , Roy A. Carruthers
发明人： Gareth G. Hougham , Kamalesh K. Srivastava , Sung K. Kang , Da-Yuan Shih , Brian R. Sundlof , S. Jay Chey , Donald W. Henderson , David R. Di Milia , Richard P. Ferlita , Roy A. Carruthers
IPC分类号： B23K35/24 , B23K101/36 , B23K31/02
CPC分类号： B23K1/19 , B23K35/262 , H05K3/3436 , H05K3/3463 , H05K2201/0215
摘要： Briefly, a novel material process is disclosed wherein one or more nucleation modifiers are added, in trace amounts, to a lead-free tin-rich solder alloy to produce a solder composition with reduce or suppressed undercooling temperature characteristics. The modifier being a substance which facilitates the reduction of extreme anisotropic properties associated with body-centered-tetragonal tin based lead-free solder. The addition of the nucleation modifiers to the solder alloy does not materially effect the solder composition's melting point. As such, balls of solder with the nucleated composition freeze while other solder balls within the array remain in the melt. This effectively enables one substrate to be pinned to another substrate by one or more predetermined solder balls to secure the package while the remaining solder joints are in the liquid state. Further, the addition of a trace amount of nucleation sites within the composition facilitates control over the number, size, and orientations of primary intermetallic compounds in tin rich crystallite grains. Moreover, trace amounts of one or more solid and/or insoluble nucleating modifiers within a given volume of solder reduces the size of average crystallites within the composition.
摘要翻译： 简而言之，公开了一种新颖的材料方法，其中将一种或多种成核改性剂以微量添加到无铅富锡焊料合金中以产生具有降低或抑制的过冷温度特性的焊料组合物。 该改性剂是有助于减少与体心四方锡锡基无铅焊料相关的极端各向异性的物质。 将成核改性剂添加到焊料合金中不会实质上影响焊料组合物的熔点。 因此，具有成核组合物的焊料球冻结，而阵列内的其它焊球保持在熔体中。 这有效地使一个基板通过一个或多个预定的焊球被固定到另一个基板，以固定封装，而剩余的焊点处于液态。 此外，在组合物中添加微量的成核位点有助于控制富锡微晶颗粒中初级金属间化合物的数量，尺寸和取向。 此外，在给定体积的焊料中痕量的一种或多种固态和/或不溶性成核改性剂减少了组合物内平均微晶的尺寸。
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9.发明申请公开(公告)号：US20080203585A1
公开(公告)日：2008-08-28
申请号：US12113108
申请日：2008-04-30
申请人： Keith E. Fogel , Balaram Ghosal , Sung K. Kang , Stephen Kilpatrick , Paul A. Lauro , Henry A. Nye , Da-Yuan Shih , Donna S. Zupanski-Nielsen
发明人： Keith E. Fogel , Balaram Ghosal , Sung K. Kang , Stephen Kilpatrick , Paul A. Lauro , Henry A. Nye , Da-Yuan Shih , Donna S. Zupanski-Nielsen
IPC分类号： H01L23/52
CPC分类号： H01L24/05 , H01L24/03 , H01L24/11 , H01L24/12 , H01L2224/03912 , H01L2224/0401 , H01L2224/05 , H01L2224/1147 , H01L2224/11849 , H01L2224/119 , H01L2224/13023 , H01L2224/13099 , H01L2224/131 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/0104 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01055 , H01L2924/01073 , H01L2924/01074 , H01L2924/01076 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/01327 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/14 , H01L2924/30107 , H01L2924/00014
摘要： An interconnection structure suitable for flip-chip attachment of microelectronic device chips to packages, comprising a two, three or four layer ball-limiting composition including an adhesion/reaction barrier layer, and having a solder wettable layer reactive with components of a tin-containing lead free solder, so that the solderable layer can be totally consumed during soldering, but a barrier layer remains after being placed in contact with the lead free solder during soldering. One or more lead-free solder balls is selectively situated on the solder wetting layer, the lead-free solder balls comprising tin as a predominant component and one or more alloying components.
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10.发明授权Electromigration-resistant under-bump metallization of nickel-iron alloys for Sn-rich solder bumps in Pb-free flip-clip 有权在无铅触点夹中，用于富Sn焊料凸块的镍 - 铁合金的耐金属凸点蚀刻金属化公开(公告)号：US09082762B2
公开(公告)日：2015-07-14
申请号：US12647999
申请日：2009-12-28
申请人： Sung K. Kang , Paul A. Lauro , Minhua Lu , Da-Yuan Shih
发明人： Sung K. Kang , Paul A. Lauro , Minhua Lu , Da-Yuan Shih
IPC分类号： H01L23/48 , H01L21/44 , H01L23/498 , H01L23/00
CPC分类号： H01L23/49811 , H01L24/03 , H01L24/05 , H01L24/13 , H01L24/81 , H01L2224/0401 , H01L2224/05147 , H01L2224/05562 , H01L2224/05564 , H01L2224/05655 , H01L2224/11849 , H01L2224/13111 , H01L2224/16503 , H01L2924/00013 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01021 , H01L2924/01023 , H01L2924/01024 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01041 , H01L2924/01047 , H01L2924/01049 , H01L2924/01051 , H01L2924/01063 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0109 , H01L2924/01327 , H01L2924/014 , H01L2924/10253 , H01L2924/14 , H01L2924/1461 , H01L2924/15787 , H01L2924/01026 , H01L2924/00014 , H01L2224/13099 , H01L2224/13599 , H01L2224/05599 , H01L2224/05099 , H01L2224/29099 , H01L2224/29599 , H01L2924/00 , H01L2224/05552
摘要： A process comprises manufacturing an electromigration-resistant under-bump metallization (UBM) flip chip structure comprising a Cu layer by applying to the Cu layer a metallic reaction barrier layer comprising NiFe. The solder employed in the flip chip structure comprise substantially lead-free tin. A structure comprises a product produced by this process. In another embodiment a process comprises manufacturing an electromigration-resistant UBM Sn-rich Pb-free solder bump flip chip structure wherein the electromigration-resistant UBM structure comprises a four-layer structure, or a three-layer structure, wherein the four layer structure is formed by providing 1) an adhesion layer, 2) a Cu seed layer for plating, 3) a reaction barrier layer, and 4) a wettable layer for joining to the solder, and the three-layer structure is formed by providing 1) an adhesion layer, 2) a reaction barrier layer, and 3) a wettable layer. In a further embodiment, the reaction barrier layer comprises metals selected from Ni, Fe, Pd, Pt, Co, Cu and their alloys, and combinations thereof. A structure comprises a product produced by the immediately foregoing process.
摘要翻译： 一种方法包括通过向Cu层施加包含NiFe的金属反应阻挡层来制造包含Cu层的电迁移性凸块下金属化（UBM）倒装芯片结构。 在倒装芯片结构中使用的焊料基本上包括无铅锡。 一种结构包括通过该方法生产的产品。 在另一个实施方案中，一种方法包括制造抗电镀UBM Sn的无铅焊料凸块倒装芯片结构，其中电迁移阻挡UBM结构包括四层结构或三层结构，其中四层结构是 通过提供1）粘合层形成，2）用于电镀的Cu籽晶层，3）反应阻挡层，以及4）用于与焊料接合的可湿性层，并且通过提供1）一种 粘合层，2）反应阻挡层，和3）可湿性层。 在另一个实施方案中，反应阻挡层包含选自Ni，Fe，Pd，Pt，Co，Cu及其合金的金属及其组合。 一种结构包括由上述方法生产的产品。
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