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    Wavelength tunable filter and wavelength tunable laser module
    3.
    发明授权
    Wavelength tunable filter and wavelength tunable laser module 有权
    波长可调滤波器和波长可调激光模块

    公开(公告)号：US08179931B2

    公开(公告)日：2012-05-15

    申请号：US12622785

    申请日：2009-11-20

    申请人： Hideo Arimoto ,  Masahiro Aoki

    发明人： Hideo Arimoto ,  Masahiro Aoki

    IPC分类号： H01S3/10

    CPC分类号： G02F1/3133 ,  H01S5/06256 ,  H01S5/1032 ,  H01S5/1035

    摘要： A wavelength tunable filter and a wavelength tunable laser module are a codirectional coupler type whose characteristics do not vary significantly with a process error. They are structured so as to include a semiconductor substrate which has a first optical waveguide and a second optical waveguide. The first and the second optical waveguides are extended from a first side of the semiconductor substrate to an opposing second side thereof. The first optical waveguide includes a first core layer, which has a planar layout having periodic convexes and concaves, and a pair of electrodes, which vertically sandwich the first core layer. The second optical waveguide includes a second core layer, which has a lower refractive index than the first core layer. Further, a layer having the same composition and film thickness as the second core layer is placed under the first core layer.

    摘要翻译： 波长可调滤波器和波长可调激光器模块是一种同向耦合器类型，其特性与处理误差不会显着变化。 它们被构造成包括具有第一光波导和第二光波导的半导体衬底。 第一和第二光波导从半导体衬底的第一侧延伸到相对的第二侧。 第一光波导包括具有周期性凸起和凹陷的平面布局的第一芯层和垂直夹着第一芯层的一对电极。 第二光波导包括具有比第一芯层低的折射率的第二芯层。 此外，具有与第二芯层相同的组成和膜厚度的层被放置在第一芯层下方。

    LIGHT-EMITTING DEVICE, LIGHT-RECEIVING DEVICE AND METHOD OF MANUFACTURING THE SAME
    4.
    发明申请
    LIGHT-EMITTING DEVICE, LIGHT-RECEIVING DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
    发光装置，光接收装置及其制造方法

    公开(公告)号：US20110227116A1

    公开(公告)日：2011-09-22

    申请号：US13129115

    申请日：2009-10-21

    申请人： Shinichi Saito ,  Masahiro Aoki ,  Nobuyuki Sugii ,  Katsuya Oda ,  Toshiki Sugawa

    发明人： Shinichi Saito ,  Masahiro Aoki ,  Nobuyuki Sugii ,  Katsuya Oda ,  Toshiki Sugawa

    IPC分类号： H01L33/34 ,  H01L33/60 ,  H01L31/028 ,  H01L31/18

    CPC分类号： H01S5/3201 ,  H01L31/103 ,  H01L31/1808 ,  H01S5/0208 ,  H01S5/021 ,  H01S5/026 ,  H01S5/0264 ,  H01S5/0424 ,  H01S5/1032 ,  H01S5/1231 ,  H01S5/125 ,  H01S5/3223 ,  Y02E10/50

    摘要： An object of the present invention is to provide a germanium laser diode that can be easily formed on a substrate such as silicon by using a normal silicon process and can emit light efficiently. A germanium light-emitting device according to the present invention is a germanium laser diode characterized in that tensile strain is applied to single-crystal germanium serving as a light-emitting layer to be of a direct transition type, a thin semiconductor layer made of silicon, germanium or silicon-germanium is connected adjacently to both ends of the germanium light-emitting layer, the thin semiconductor layer has a certain degree of thickness capable of preventing the occurrence of quantum confinement effect, another end of the thin semiconductor layer is connected to a thick electrode doped with impurities at a high concentration, the electrode is doped to a p type and an n type, a waveguide is formed so as not to be in direct contact with the electrode, and a mirror is formed at an end of the waveguide.

    摘要翻译： 本发明的目的是提供一种可以通过使用普通硅工艺容易地在诸如硅的衬底上形成的锗激光二极管，并且能够有效发光。 根据本发明的锗发光器件是锗激光二极管，其特征在于将拉伸应变施加到作为直接转变型的发光层的单晶锗，由硅制成的薄半导体层 ，锗或锗锗与锗发光层的两端相邻连接，薄型半导体层具有能够防止量子限制效应发生的一定程度的厚度，薄半导体层的另一端与 以高浓度掺杂有杂质的厚电极，电极被掺杂成ap型和n型，形成波导以不与电极直接接触，并且在波导的端部形成反射镜 。

    Method Of Producing Compound Having Anti-Hcv Activity
    5.
    发明申请
    Method Of Producing Compound Having Anti-Hcv Activity 审中-公开
    生产具有抗Hcv活性的化合物的方法

    公开(公告)号：US20110098477A1

    公开(公告)日：2011-04-28

    申请号：US11988003

    申请日：2006-06-27

    申请人： Masahiro Aoki ,  Yoshie Nagahashi ,  Hideyuki Kato ,  Tatsuya Ito ,  Miyako Masubuchi ,  Toru Okuda

    发明人： Masahiro Aoki ,  Yoshie Nagahashi ,  Hideyuki Kato ,  Tatsuya Ito ,  Miyako Masubuchi ,  Toru Okuda

    IPC分类号： C07D213/55 ,  C07C229/36 ,  C12P13/04

    CPC分类号： C07C229/36 ,  C07C231/14 ,  C12P13/02 ,  C07C235/76

    摘要： There is provided a convenient and inexpensive method of producing a compound which has a high activity of inhibiting replication of hepatitis C virus (HCV) and is useful for preventing and treating a liver disease caused by HCV infection.It is a method of biologically producing a compound represented by the formula (1): [wherein A represents a hydrogen atom, a straight or branched alkyl group having 1 to 8 carbon atoms, or the like], or a pharmaceutically acceptable salt thereof, a method comprising adding an amino acid derivative represented by the formula (3): [wherein A has the same meaning as defined for the compound of the above formula (1); and R represents a hydrogen atom, a straight or branched alkyl group having 1 to 8 carbon atoms, or the like], or a salt thereof into the fungal mycelium or the culture medium/culture broth of a filamentous fungal strain having an ability to produce the compound represented by the formula (2): to thereby cause the fungal strain to directly produce the compound of the formula (1).

    摘要翻译： 提供了一种方便且廉价的生产具有抑制丙型肝炎病毒（HCV）复制活性的化合物的方法，并且可用于预防和治疗由HCV感染引起的肝脏疾病。 生物地制造式（1）表示的化合物或其药学上可接受的盐的方法：[其中A表示氢原子，碳原子数1〜8的直链或支链烷基等] 包括加入由式（3）表示的氨基酸衍生物的方法：[其中A具有与上述式（1）的化合物相同的含义; R表示氢原子，碳原子数为1〜8的直链或支链烷基等，或其盐形成具有生产能力的丝状真菌菌株的真菌菌丝体或培养液/培养液 由式（2）表示的化合物：由此使真菌菌株直接生成式（1）的化合物。

    Battery
    6.
    发明授权
    Battery 有权
    电池

    公开(公告)号：US07906237B2

    公开(公告)日：2011-03-15

    申请号：US10866214

    申请日：2004-06-10

    申请人： Momoe Adachi ,  Shigeru Fujita ,  Masahiro Aoki ,  Hiroyuki Akashi ,  Yoshiaki Naruse

    发明人： Momoe Adachi ,  Shigeru Fujita ,  Masahiro Aoki ,  Hiroyuki Akashi ,  Yoshiaki Naruse

    IPC分类号： H01M4/58 ,  H01M6/04

    CPC分类号： H01M10/054 ,  H01M4/134 ,  H01M10/052 ,  H01M10/0565 ,  H01M10/0568 ,  H01M2300/0025

    摘要： A battery is provided which has a high capacity and can improve battery characteristics, such as cycle characteristics. The battery includes a spirally wound electrode body, wherein a cathode and an anode are wound with a separator in between. The anode includes, for example, simple substances, alloys, compounds of metal elements or metalloid elements capable of forming an alloy with Li, the like and combinations thereof. An electrolytic solution wherein an electrolyte salt is dissolved in a solvent is impregnated in the separator. For the electrolyte salt, a light metallic salt having B—O bond or P—O bond, such as difluoro[oxalato-O,O′]lithium borate and tetra fluoro[oxalato-O,O′]lithium phosphate, can be used. By forming a stable coating, decomposition reaction of the solvent can be inhibited, and reaction between the anode and the solvent can be prevented.

    摘要翻译： 提供具有高容量并且可以改善诸如循环特性的电池特性的电池。 电池包括螺旋卷绕的电极体，其中阴极和阳极在其间缠绕有隔膜。 阳极包括例如能够与Li形成合金的简单物质，合金，金属元素的化合物或类金属元素及其组合。 将电解质盐溶解在溶剂中的电解液浸渍在隔膜中。 对于电解质盐，可以使用具有B-O键或P-O键的轻金属盐，例如二氟[草酸-O，O']硼酸锂和四氟[草酸-O，O']磷酸锂 。 通过形成稳定的涂层，能够抑制溶剂的分解反应，能够防止阳极与溶剂的反应。

    Semiconductor laser apparatus
    8.
    发明申请
    Semiconductor laser apparatus 有权
    半导体激光装置

    公开(公告)号：US20090268772A1

    公开(公告)日：2009-10-29

    申请号：US12385735

    申请日：2009-04-17

    申请人： Hideo Arimoto ,  Masahiro Aoki

    发明人： Hideo Arimoto ,  Masahiro Aoki

    IPC分类号： H01S5/026 ,  H01S3/08

    CPC分类号： H01S5/141 ,  H01S5/02248 ,  H01S5/02284 ,  H01S5/0267 ,  H01S5/1082 ,  H01S5/1085 ,  H01S5/18 ,  H01S5/227 ,  H01S5/4087

    摘要： A wavelength variable laser smaller in size than the conventional one can be achieved by arranging a gain chip, an etalon filter and a fifth reflective mirror on an AlN submount and longitudinally integrating the gain chip in which a 45° mirror and a lens are integrated and the etalon filter. A laser cavity has a structure in which light passes through an active layer from a first reflective mirror realized by an end surface of the gain chip, is reflected by the 45° mirror at an angle of 90° and then passes through the lens. The light having passed through the lens is converted into parallel light, passes through the etalon filter and reaches the fifth reflective mirror and is then reflected. The reflected light returns through the same optical path and reaches the first reflective mirror realized by the end surface of the gain chip.

    摘要翻译： 可以通过在AlN基座上布置增益芯片，标准具滤波器和第五反射镜并纵向积分其中集成45°反射镜和透镜的增益芯片来实现尺寸比常规小的波长可变激光器， 标准具过滤器。 激光腔具有光从通过增益芯片的端面实现的第一反射镜穿过有源层的结构，被45°反射镜以90°的角度反射，然后通过透镜。 通过透镜的光被转换为平行光，通过标准具过滤器并到达第五反射镜，然后被反射。 反射光通过相同的光路返回并到达由增益芯片的端面实现的第一反射镜。

    Optical recording and reading equipment
    9.
    发明申请
    Optical recording and reading equipment 审中-公开
    光学录音设备

    公开(公告)号：US20090154326A1

    公开(公告)日：2009-06-18

    申请号：US12379217

    申请日：2009-02-17

    申请人： Koichi Watanabe ,  Takahiro Kurokawa ,  Masahiro Aoki ,  Takeshi Shimano

    发明人： Koichi Watanabe ,  Takahiro Kurokawa ,  Masahiro Aoki ,  Takeshi Shimano

    IPC分类号： G11B7/00

    CPC分类号： G11B7/127 ,  G11B7/1263 ,  G11B7/128

    摘要： Disclosed herewith is a data recording and reading equipment capable of reducing laser noise easily. At first, a laser beam source that can reduce the laser noise when reading data from a subject optical disk is obtained. A modulator capable of varying laser attenuation with a voltage is disposed so as to precede the laser, thereby the laser noise when reading data from the optical disk can be reduced without lowering the laser power when in writing.

    摘要翻译： 这里公开了能够容易地减少激光噪声的数据记录和读取设备。 首先，获得当从主体光盘读取数据时能够降低激光噪声的激光束源。 能够在激光之前设置能够以电压变化激光衰减的调制器，从而可以在写入时降低激光功率而降低从光盘读取数据时的激光噪声。

    Semiconductor laser device and semiconductor optical modulator
    10.
    发明授权
    Semiconductor laser device and semiconductor optical modulator 有权
    半导体激光器件和半导体光调制器

    公开(公告)号：US07329894B2

    公开(公告)日：2008-02-12

    申请号：US11202285

    申请日：2005-08-12

    申请人： Takeshi Kitatani ,  Masahiro Aoki ,  Tomonobu Tsuchiya

    发明人： Takeshi Kitatani ,  Masahiro Aoki ,  Tomonobu Tsuchiya

    IPC分类号： H01L29/02 ,  H01L47/00

    CPC分类号： H01S5/34313 ,  B82Y20/00 ,  H01S5/2009 ,  H01S5/3213 ,  H01S5/3216 ,  H01S5/34306 ,  H01S5/34366 ,  H01S2304/04

    摘要： Since the semiconductor devices including a stacked structure of group-III-V alloy semiconductor layers different in the kind of group-V constituent atom form the so-called band line-up of type II, band discontinuity in the heterostructure has impeded smooth transport of carriers and deteriorated device characteristics.According to the present invention, an energy band structure that makes it possible, in one energy band (e.g., a valence band), to smoothly transport carriers of one of two kinds (e.g., holes) by connecting energy discontinuity in an inclined form or stepwise, and at the same, in the other energy band (e.g., a conduction band), to maintain a barrier effect for carriers of the other kind (e.g., electrons) by retaining energy discontinuity, can be realized for improved transport characteristics of carriers at the heterointerface forming the band line-up of type II.

    摘要翻译： 由于包含V族构成原子的种类不同的III-V族合金半导体层的叠层结构的半导体器件形成II型所谓的带阵列，所以异质结构中的带状不连续性阻碍了 载体和劣化的器件特性。 根据本发明，能量带结构在一个能带（例如价带）中可以通过以倾斜的形式连接能量不连续来平稳地输送两种（例如，孔）中的一种的载体， 并且在另一个能带（例如，导带）中，通过保持能量不连续性来维持另一种载流子（例如电子）的阻挡效应，可以实现用于改善载流子的运输特性 在形成II型频带阵列的异质界面处。