摘要:
A delay locked loop (DLL) is described in which a phase detector compares the phase of the output of the DLL with that of a reference input. The output of the phase comparator drives a differential charge pump which functions to integrate the phase comparator output signal over time. The charge pump output controls a phase shifter with unlimited range that adjusts the phase of the DLL output so that the output of the phase comparator is high 50% of the time on average. Because the DLL adjusts the phase shifter until the output of the phase detector is high 50% of the time, on average, the relationship of the DLL output clock to the input reference clock depends only on the type of phase detector used. For example, when a data receiver is used as the phase detector in the DLL, the output of the DLL is a clock signal which can be used as a sampling clock for data receivers elsewhere in the system, and is timed to sample data at the optional instant independent of temperature, supply voltage and process variations. Alternatively, a quadrature phase detector may be employed to generate a clock signal that possesses a quadrature (90.degree. ) relationship with a reference clock signal input. This may be used, for example, to generate a transmit clock for a data transmission device. Furthermore, the DLL is controlled to minimize dither jitter while minimizing acquisition time. In addition, duty cycle correcting amplifiers are employed to produce a DLL output clock that has a desired duty cycle, for example 50%. Additionally, the inputs to the charge pump are reversed in alternate quadrants of the phase plane in order to enable unlimited phase shift with a finite control voltage range.
摘要:
A receiver adapted to be coupled to a data bus and configured to receive data in accordance with a receive clock includes first and second delay-locked loops. The first delay-locked loop is configured to generate a plurality of phase vectors from a first reference clock, and the second delay-locked loop is coupled to the first delay-locked loop and configured to generate the receive clock from at least one phase vector selected from the plurality of phase vectors and a second reference clock.
摘要:
Delay locked loop circuitry for generating a predetermined phase relationship between a pair of clocks. A first delay-locked loop includes a delay elements arranged in a chain, the chain receiving an input clock and generating, from each delay element, a set of phase vectors, each shifted a unit delay from the adjacent vector. The first delay-locked loop adjusts the unit delays in the delay chain using a delay adjustment signal so that the phase vectors span a predetermined phase shift of the input clock. A second delay-locked loop selects, from the first delay-locked loop, a pair of phase vectors which brackets the phase of an input clock. A phase interpolator receives the selected pair of vectors and generates an output clock and a delayed output clock, the amount of the delay being controlled by the delay adjustment signal of the first delay-locked loop circuitry. A phase detector compares the delayed output clock with the input clock and adjusts the phase interpolator, based on the phase comparison, so that the phase of the delayed output clock is in phase with the input clock. As a result, there is a predetermined phase relationship between the output clock and the input clock, the phase relationship being the amount of delay between the output clock and the delayed output clock. Different phase relationships between the input and output clock are possible depending on the number of unit delays used in the path of the delayed output clock or the output clock.
摘要:
Delay-locked loop circuitry for generating a predetermined phase relationship between a pair of clocks. A first delay-locked loop includes a set of delay-producing elements arranged in a chain, the chain receiving an input clock and generating, from each delay element, a set of phase vectors, each shifted a unit delay from the adjacent vector. The first delay-locked loop adjusts the unit delays in the delay chain using a delay adjustment signal so that the phase vectors span a predetermined phase shift of the input clock. A second delay-locked loop selects, from the first delay-locked loop, a pair of phase vectors which brackets the phase of an input clock. A phase interpolator receives the selected pair of vectors and generates an output clock and a delayed output clock, the amount of the delay being controlled by the delay adjustment signal of the first delay-locked loop circuitry. A phase detector compares the delayed output clock with the input clock and adjusts the phase interpolator, based on the phase comparison, so that the phase of the delayed output clock is in phase with the input clock. As a result, there is a predetermined phase relationship between the output clock and the input clock, the phase relationship being the amount of delay between the output clock and the delayed output clock. Different phase relationships between the input and output clock are possible depending on the number of unit delays used.
摘要:
Delay locked loop circuitry for generating a predetermined phase relationship between a pair of clocks. A first delay-locked loop includes a delay elements arranged in a chain, the chain receiving an input clock and generating, from each delay element, a set of phase vectors, each shifted a unit delay from the adjacent vector. The first delay-locked loop adjusts the unit delays in the delay chain using a delay adjustment signal so that the phase vectors span a predetermined phase shift of the input clock. A second delay-locked loop selects, from the first delay-locked loop, a pair of phase vectors which brackets the phase of an input clock. A phase interpolator receives the selected pair of vectors and generates an output clock and a delayed output clock, the amount of the delay being controlled by the delay adjustment signal of the first delay-locked loop circuitry. A phase detector compares the delayed output clock with the input clock and adjusts the phase interpolator, based on the phase comparison, so that the phase of the delayed output clock is in phase with the input clock. As a result, there is a predetermined phase relationship between the output clock and the input clock, the phase relationship being the amount of delay between the output clock and the delayed output clock. Different phase relationships between the input and output clock are possible depending on the number of unit delays used in the path of the, delayed output clock or the output clock.
摘要:
A pulse generating circuit that includes an unbalanced latch and a feedback circuit. The unbalanced latch is configured to generate a latch signal having a predetermined state in response to application of power to the circuit. The feedback circuit is coupled in a negative feedback arrangement with the unbalanced latch and generates a pulse signal for a predetermined period of time in response to the latch signal.
摘要:
There is provided a monolithic three dimensional array of charge storage devices which includes a plurality of device levels, wherein at least one surface between two successive device levels is planarized by chemical mechanical polishing.
摘要:
There is provided a monolithic three dimensional array of charge storage devices which includes a plurality of device levels, wherein at least one surface between two successive device levels is planarized by chemical mechanical polishing.
摘要:
A very high density field programmable memory is disclosed. An array is formed vertically above a substrate using several layers, each layer of which includes vertically fabricated memory cells. The cell in an N level array may be formed with N+1 masking steps plus masking steps needed for contacts. Maximum use of self alignment techniques minimizes photolithographic limitations. In one embodiment the peripheral circuits are formed in a silicon substrate and an N level array is fabricated above the substrate.
摘要:
A very high density field programmable memory is disclosed. An array is formed vertically above a substrate using several layers, each layer of which includes vertically fabricated memory cells. The cell in an N level array may be formed with N+1 masking steps plus masking steps needed for contacts. Maximum use of self alignment techniques minimizes photolithographic limitations. In one embodiment the peripheral circuits are formed in a silicon substrate and an N level array is fabricated above the substrate.