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1.发明授权Using electrophoresis to produce a conformally coated phosphor-converted light emitting semiconductor 有权使用电泳产生保形涂覆的磷光体转换的发光半导体公开(公告)号：US06576488B2
公开(公告)日：2003-06-10
申请号：US09879627
申请日：2001-06-11
申请人： William David Collins, III , Michael R. Krames , Godefridus Johannes Verhoeckx , Nicolaas Joseph Martin van Leth
发明人： William David Collins, III , Michael R. Krames , Godefridus Johannes Verhoeckx , Nicolaas Joseph Martin van Leth
IPC分类号： H01L2100
CPC分类号： H01L33/50 , C25D13/02 , H01L33/405 , H01L33/44 , H01L2224/48091 , H01L2933/0041 , H01L2924/00014
摘要： Presented is a method of conformally coating a light emitting semiconductor structure with a phosphor layer to produce a substantially uniform white light. A light emitting semiconductor structure is coupled to a submount, a first bias voltage is applied to the submount, and a second bias voltage is applied to a solution of charged phosphor particles. The charged phosphor particles deposit on the conductive surfaces of the light emitting semiconductor structure. If the light emitting semiconductor structure includes a nonconductive substrate, the light emitting semiconductor structure is coated with an electroconductive material to induce phosphor deposition. The electrophoretic deposition of the phosphor particles creates a phosphor layer of uniform thickness that produces uniform white light without colored rings.
摘要翻译： 提出了一种使发光半导体结构保形地涂覆有荧光体层以产生基本均匀的白光的方法。 发光半导体结构耦合到基座，将第一偏置电压施加到基座，并且将第二偏压施加到带电荧光体颗粒的溶液。 带电的荧光体颗粒沉积在发光半导体结构的导电表面上。 如果发光半导体结构包括非导电衬底，则用导电材料涂覆发光半导体结构以引起荧光体沉积。 荧光体颗粒的电泳沉积产生均匀厚度的荧光体层，其产生均匀的白色光，而无色环。
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公开(公告)号：US06642652B2
公开(公告)日：2003-11-04
申请号：US09879547
申请日：2001-06-11
申请人： William David Collins, III , Michael R. Krames , Godefridus Johannes Verhoeckx , Nicolaas Joseph Martin van Leth
发明人： William David Collins, III , Michael R. Krames , Godefridus Johannes Verhoeckx , Nicolaas Joseph Martin van Leth
IPC分类号： H01J6304
CPC分类号： H01L33/505 , H01L2224/48091 , H01L2924/01019 , H01L2924/01039 , H01L2924/10253 , H01L2924/12041 , H01L2924/3025 , H01L2924/00014 , H01L2924/00
摘要： A light source is disclosed that includes a light emitting device such as a III-nitride light emitting diode covered with a luminescent material structure, such as a single layer or multiple layers of phosphor. Any variations in the thickness of the luminescent material structure are less than or equal to 10% of the average thickness of the luminescent material structure. In some embodiments, the thickness of the luminescent material structure is less than 10% of a cross-sectional dimension of the light emitting device. In some embodiments, the luminescent material structure is the only luminescent material through which light emitted from the light emitting device passes. In some embodiments, the luminescent material structure is between about 15 and about 100 microns thick. The luminescent material structure is selectively deposited on the light emitting device by, for example, stenciling or electrophoretic deposition.
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公开(公告)号：US09911896B2
公开(公告)日：2018-03-06
申请号：US12830885
申请日：2010-07-06
CPC分类号： H01L33/007 , H01L33/08 , H01L33/12 , H01L33/22
摘要： In accordance with embodiments of the invention, at least partial strain relief in a light emitting layer of a III-nitride light emitting device is provided by configuring the surface on which at least one layer of the device grows such that the layer expands laterally and thus at least partially relaxes. This layer is referred to as the strain-relieved layer. In some embodiments, the light emitting layer itself is the strain-relieved layer, meaning that the light emitting layer is grown on a surface that allows the light emitting layer to expand laterally to relieve strain. In some embodiments, a layer grown before the light emitting layer is the strain-relieved layer. In a first group of embodiments, the strain-relieved layer is grown on a textured surface.
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公开(公告)号：US08884517B1
公开(公告)日：2014-11-11
申请号：US13274489
申请日：2011-10-17
CPC分类号： F21V29/15 , F21K9/23 , F21K9/90 , F21V29/70 , F21V29/74 , F21V29/83 , F21Y2105/10 , F21Y2115/10
摘要： An lighting source includes a driver for outputting electrical power in response to external electrical power, wherein the driver generates heat in response thereto, a lamp coupled to the driver, for outputting light in response to the electrical power, wherein the lamp generates heat in response thereto, a first heat sink physically coupled to the driver for receiving and dissipating heat there from, a second heat sink physically coupled to the light for receiving heat and dissipating heat there from, and an insulating portion disposed between the first heat sink and the second heat sink, wherein the insulating portion is configured to inhibit heat from the lamp from being transferred to the driver.
摘要翻译： 照明源包括用于响应于外部电力输出电力的驱动器，其中驱动器响应于此而产生热量，连接到驱动器的灯，用于响应于电功率而输出光，其中灯发出响应的热量 物理耦合到驱动器的第一散热器，用于从其接收和散发热量，物理耦合到光的第二散热器，用于接收热量并从中散发热量;以及绝缘部分，设置在第一散热器和第二散热器之间 散热器，其中所述绝缘部分被配置为抑制来自所述灯的热量被传送到所述驱动器。
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公开(公告)号：US08445929B2
公开(公告)日：2013-05-21
申请号：US12723720
申请日：2010-03-15
申请人： Michael R. Krames , Gerd O. Mueller
发明人： Michael R. Krames , Gerd O. Mueller
IPC分类号： H01L33/00
CPC分类号： H01L33/501 , B82Y30/00 , C04B35/44 , C04B35/495 , C04B35/6268 , C04B35/62805 , C04B35/62807 , C04B35/62813 , C04B35/645 , C04B37/001 , C04B37/005 , C04B37/006 , C04B37/008 , C04B37/026 , C04B2235/3217 , C04B2235/3225 , C04B2235/3229 , C04B2235/5454 , C04B2237/02 , C04B2237/06 , C04B2237/064 , C04B2237/068 , C04B2237/08 , C04B2237/083 , C04B2237/10 , C04B2237/12 , C04B2237/30 , C04B2237/34 , C04B2237/343 , C04B2237/36 , C04B2237/365 , C04B2237/366 , C04B2237/368 , C04B2237/52 , C04B2237/525 , C04B2237/704 , C04B2237/708 , C04B2237/76 , H01L33/0079 , H01L33/08 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/14 , H01L2924/00014 , H01L2924/0002 , H01L2924/00 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： Embodiments of the invention include a light emitting structure comprising a light emitting layer. A first luminescent material comprising a phosphor is disposed in a path of light emitted by the light emitting layer. A second luminescent material comprising a semiconductor is also disposed in a path of light emitted by the light emitting layer. The second luminescent material is configured to absorb light emitted by the light emitting layer and emit light of a different wavelength. In some embodiments, one of the first and second luminescent materials may be bonded to the semiconductor structure.
摘要翻译： 本发明的实施例包括包括发光层的发光结构。 包含磷光体的第一发光材料设置在由发光层发射的光的路径中。 包括半导体的第二发光材料也设置在由发光层发射的光的路径中。 第二发光材料被配置为吸收由发光层发射的光并发射不同波长的光。 在一些实施例中，第一和第二发光材料之一可以结合到半导体结构。
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公开(公告)号：US08288186B2
公开(公告)日：2012-10-16
申请号：US12887853
申请日：2010-09-22
IPC分类号： H01L21/20 , H01L21/301
CPC分类号： H01L21/76256 , C30B25/183 , C30B29/40 , C30B29/403 , H01L21/76254 , H01L33/007 , H01L33/0079
摘要： A substrate including a host and a seed layer bonded to the host is provided, then a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region is grown on the seed layer. In some embodiments, a bonding layer bonds the host to the seed layer. The seed layer may be thinner than a critical thickness for relaxation of strain in the semiconductor structure, such that strain in the semiconductor structure is relieved by dislocations formed in the seed layer, or by gliding between the seed layer and the bonding layer an interface between the two layers. In some embodiments, the host may be separated from the semiconductor structure and seed layer by etching away the bonding layer.
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公开(公告)号：US20120199952A1
公开(公告)日：2012-08-09
申请号：US13346507
申请日：2012-01-09
CPC分类号： H01L21/02433 , H01L21/0237 , H01L21/02458 , H01L21/02499 , H01L21/02507 , H01L21/0254 , H01L21/0262 , H01L21/02631 , H01L29/2003
摘要： A method for growth of indium-containing nitride films is described, particularly a method for fabricating a gallium, indium, and nitrogen containing material. On a substrate having a surface region a material having a first indium-rich concentration is formed, followed by a second thickness of material having a first indium-poor concentration. Then a third thickness of material having a second indium-rich concentration is added to form a sandwiched structure which is thermally processed to cause formation of well-crystallized, relaxed material within a vicinity of a surface region of the sandwich structure.
摘要翻译： 描述了含铟氮化物膜的生长方法，特别是制造镓，铟和含氮材料的方法。 在具有表面区域的基板上形成具有第一富铟浓度的材料，然后形成具有第一贫铟浓度的第二厚度的材料。 然后加入具有第二富铟浓度的第三厚度的材料以形成夹层结构，其被热处理以在夹层结构的表面区域附近形成良好结晶的松弛材料。
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公开(公告)号：US08203153B2
公开(公告)日：2012-06-19
申请号：US12688209
申请日：2010-01-15
CPC分类号： H01L33/20 , H01L33/0079 , H01L33/22 , H01L2933/0083
摘要： Embodiments of the invention include a substrate comprising a host and a seed layer bonded to the host, and a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region grown over the seed layer. A variation in index of refraction in a direction perpendicular to a growth direction of the semiconductor structure is disposed between the host and the light emitting layer.
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公开(公告)号：US08163575B2
公开(公告)日：2012-04-24
申请号：US11156105
申请日：2005-06-17
IPC分类号： H01L21/00
CPC分类号： C30B29/60 , B82Y20/00 , G02B6/1225 , H01L33/08 , H01L33/18 , H01L33/24 , H01L2933/0083 , H01S5/105 , H01S5/34333
摘要： A photonic crystal is grown within a semiconductor structure, such as a III-nitride structure, which includes a light emitting region disposed between an n-type region and a p-type region. The photonic crystal may be multiple regions of semiconductor material separated by a material having a different refractive index than the semiconductor material. For example, the photonic crystal may be posts of semiconductor material grown in the structure and separated by air gaps or regions of masking material. Growing the photonic crystal, rather than etching a photonic crystal into an already-grown semiconductor layer, avoids damage caused by etching which may reduce efficiency, and provides uninterrupted, planar surfaces on which to form electric contacts.
摘要翻译： 光子晶体在诸如III族氮化物结构的半导体结构内生长，其包括设置在n型区域和p型区域之间的发光区域。 光子晶体可以是由具有与半导体材料不同的折射率的材料分离的半导体材料的多个区域。 例如，光子晶体可以是在结构中生长并由气隙或掩模材料区域分离的半导体材料的柱。 生长光子晶体，而不是将光子晶体蚀刻成已经生长的半导体层，避免了蚀刻造成的损伤，这可能降低效率，并提供不间断的平面，在其上形成电触点。
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10.发明授权Method of forming a composite substrate and growing a III-V light emitting device over the composite substrate 有权形成复合衬底并在复合衬底上生长III-V发光器件的方法公开(公告)号：US08105852B2
公开(公告)日：2012-01-31
申请号：US12688382
申请日：2010-01-15
CPC分类号： H01L33/007 , H01L21/02458
摘要： A method according to embodiments of the invention includes providing a substrate comprising a host and a seed layer bonded to the host. The seed layer comprises a plurality of regions. A semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region is grown on the substrate. A top surface of a semiconductor layer grown on the seed layer has a lateral extent greater than each of the plurality of seed layer regions.
摘要翻译： 根据本发明的实施方案的方法包括提供包含与宿主结合的宿主和种子层的底物。 种子层包括多个区域。 在衬底上生长包括设置在n型区域和p型区域之间的发光层的半导体结构。 在种子层上生长的半导体层的顶表面的横向范围大于多个种子层区域中的每一个。
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