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85 条记录 (耗时 0.03 秒)

    Integrated circuit device
    2.
    发明授权
    Integrated circuit device 有权
    集成电路器件

    公开(公告)号：US06194932B1

    公开(公告)日：2001-02-27

    申请号：US09383015

    申请日：1999-08-25

    申请人： Yoshihiro Takemae ,  Yasurou Matsuzaki ,  Hiroyoshi Tomita ,  Nobutaka Taniguchi

    发明人： Yoshihiro Takemae ,  Yasurou Matsuzaki ,  Hiroyoshi Tomita ,  Nobutaka Taniguchi

    IPC分类号： H03L700

    CPC分类号： G11C7/222 ,  G06F1/10 ,  G11C7/22 ,  H03L7/0814

    摘要： The present invention omits a variable delay circuit (10 in FIG. 1) inside a DLL circuit, and instead, creates a timing synchronization circuit, which generates a second reference clock. The timing synchronization circuit shifts the phase of a first reference clock generated by a frequency divider to the timing of a timing signal generated from the other variable delay circuit so that the second reference clock matches to the timing signal. Then, a phase comparator compares the divided first reference clock to a variable clock that delays the second reference clock, and controls the delay time of the variable delay circuit so that both clocks are in phase. As a result, one variable delay circuit can be omitted, and a DLL circuit that uses a divided clock can be configured.

    摘要翻译： 本发明省略了DLL电路内部的可变延迟电路（图1中的10），而是产生产生第二参考时钟的定时同步电路。 定时同步电路将由分频器产生的第一参考时钟的相位移位到从另一个可变延迟电路产生的定时信号的定时，使得第二参考时钟与定​​时信号相匹配。 然后，相位比较器将分频的第一参考时钟与延迟第二参考时钟的可变时钟进行比较，并且控制可变延迟电路的延迟时间，使得两个时钟同相。 结果，可以省略一个可变延迟电路，并且可以配置使用分频时钟的DLL电路。

    Self-test circuit and memory device incorporating it
    5.
    发明授权
    Self-test circuit and memory device incorporating it 有权
    自检电路和结合其的存储器件

    公开(公告)号：US06907555B1

    公开(公告)日：2005-06-14

    申请号：US09691115

    申请日：2000-10-19

    申请人： Yukihiro Nomura ,  Hiroyuki Fujimoto ,  Takahiro Suzuki ,  Tatsuya Kanda ,  Yasurou Matsuzaki ,  Masahiko Saitou ,  Hiroyoshi Tomita

    发明人： Yukihiro Nomura ,  Hiroyuki Fujimoto ,  Takahiro Suzuki ,  Tatsuya Kanda ,  Yasurou Matsuzaki ,  Masahiko Saitou ,  Hiroyoshi Tomita

    IPC分类号： G01R31/28 ,  G01R31/3185 ,  G06F12/16 ,  G11C11/401 ,  G11C11/407 ,  G11C29/00 ,  G11C29/06 ,  G11C29/12 ,  G11C29/44

    CPC分类号： G11C29/44

    摘要： The present invention is a self-test circuit (BIST) incorporated in the memory device, which is activated in response to a test activation signal from outside. When this self-test circuit is activated in response to a test activation signal (WBIZ) from outside, it generates a test operation command (WBI-CMD), generates a test address (WBI-ADD), and generates test data (WBI-DATA). Furthermore, after the self-test circuit writes the test data to a memory cell, it effects a comparison to establish whether or not the read data that is read from this memory cell is the same as the test data that was written thereto and stores information as to the result of this comparison. This comparison result information is then output to the outside.

    摘要翻译： 本发明是一种结合在存储器件中的自检电路（BIST），其响应于来自外部的测试激活信号被激活。 当该自检电路响应于来自外部的测试激活信号（WBIZ）被激活时，它产生测试操作命令（WBI-CMD），生成测试地址（WBI-ADD），并生成测试数据（WBI- 数据）。 此外，在自检电路将测试数据写入存储单元之后，进行比较以确定从该存储单元读取的读取数据是否与写入的测试数据相同并存储信息 关于这个比较的结果。 然后将该比较结果信息输出到外部。

    Semiconductor device using complementary clock and signal input state detection circuit used for the same
    6.
    发明授权
    Semiconductor device using complementary clock and signal input state detection circuit used for the same 有权

    公开(公告)号：US06333660B2

    公开(公告)日：2001-12-25

    申请号：US09780475

    申请日：2001-02-12

    申请人： Masao Taguchi ,  Hiroyoshi Tomita ,  Yasurou Matsuzaki

    发明人： Masao Taguchi ,  Hiroyoshi Tomita ,  Yasurou Matsuzaki

    IPC分类号： H03K3013

    CPC分类号： H03L7/0805 ,  G11C7/22 ,  G11C7/222 ,  G11C7/225 ,  H03K5/135 ,  H03K5/151 ,  H03K2005/00234 ,  H03L7/0814

    摘要： A semiconductor device for generating first and second internal clocks complementary with each other from an external clock and usable for both a system of a type using a complementary clock and a system of a type generating a 180° phase clock internally, is disclosed. A first clock input circuit (buffer) is supplied with a first external clock and outputs a first internal clock. A second clock input circuit (buffer) is supplied with a second external clock complementary with the first external clock and outputs a second clock. A ½ phase clock generating circuit generates a ½ phase shift signal 180° out of phase with the first internal clock. A second external clock state detection circuit judges whether the second external clock is input to the second clock input buffer. A switch is operated to produce the second clock as the second internal clock when the second external clock is input and to produce the ½ phase shift signal as the second internal clock when the second external clock is not input, in accordance with the judgement at the second external clock state detection circuit.