公开(公告)号：US4285333A

公开(公告)日：1981-08-25

申请号：US20583

申请日：1979-03-14

申请人： Yasuo Tanaka ,  Kenji Shimokawa ,  Muneshige Nagatomo

发明人： Yasuo Tanaka ,  Kenji Shimokawa ,  Muneshige Nagatomo

IPC分类号： F24J2/42 ,  F24F5/00 ,  F24J2/40 ,  F24J2/46 ,  F24J3/02

CPC分类号： F24J2/4649 ,  F24J2/402 ,  F24J2/4632 ,  Y02E10/40

摘要： In a solar energy collecting system which comprises a primary closed circuit including a solar energy collector, a heat exchanger, a carrier fluid receiver tank, and a circulating pump and a secondary closed circuit including a utilization means and engaged with the primary closed circuit through the heat exchanger, a heat carrier used in the primary closed circuit is a fluid capable of evaporating at low temperature under low pressure and the control of the primary closed circuit is performed according to a surface temperature of the solar energy collector, a temperature of the carrier emanating from the collector and/or a pressure of the carrier in the primary closed circuit.

摘要翻译： 在包括太阳能收集器，热交换器，载体流体接收罐和循环泵的主闭路的太阳能收集系统中，以及包括利用装置的二次闭合回路，并通过所述主闭合回路 热交换器中，主闭路中使用的热载体是能够在低压下在低压下蒸发的流体，并且根据太阳能集热器的表面温度，主要闭合回路的控制，载体的温度 从集电器发出和/或在主闭路中的载体的压力。

公开(公告)号：US4179895A

公开(公告)日：1979-12-25

申请号：US875007

申请日：1978-02-03

申请人： Kenji Shimokawa ,  Muneshige Nagatomo ,  Yasuo Tanaka

发明人： Kenji Shimokawa ,  Muneshige Nagatomo ,  Yasuo Tanaka

IPC分类号： F25B15/00 ,  F25B27/00 ,  F25B33/00

CPC分类号： F25B15/008 ,  F25B27/007 ,  Y02B30/62

摘要： A cooling system which includes an occluding section for occluding vaporized cooling agent by means of an occluding agent so as to ensure continuous evaporation of cooling agent in the evaporating section. The system includes a high pressure and low pressure recovery sections for recovering the cooling agent from the occlusive agent by applying heat thereto. When a low potential energy is available, the occlusive agent is passed from the occluding section only to the low pressure recovery section, but when a high potential energy is to be used, it is passed through the high and low pressure recovery sections in this order.

摘要翻译： 一种冷却系统，其包括用于通过闭塞剂封闭蒸发的冷却剂的闭塞部分，以确保冷却剂在蒸发部分中的连续蒸发。 该系统包括高压和低压回收部分，用于通过向其施加热量从闭塞剂回收冷却剂。 当低势能可用时，闭塞剂从闭塞部分仅传递到低压回收部分，但是当使用高势能时，其以该顺序通过高低压回收部分 。

公开(公告)号：US07285486B2

公开(公告)日：2007-10-23

申请号：US11094051

申请日：2005-03-30

申请人： Kenji Shimokawa ,  Eiji Hashino ,  Kohei Tatsumi

发明人： Kenji Shimokawa ,  Eiji Hashino ,  Kohei Tatsumi

IPC分类号： H01L21/44

CPC分类号： B23K3/0623 ,  B23K2101/40 ,  H01L21/4853 ,  H01L21/6838 ,  H01L24/11 ,  H01L2224/05573 ,  H01L2224/13099 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01018 ,  H01L2924/01023 ,  H01L2924/01033 ,  H01L2924/01037 ,  H01L2924/01051 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01087 ,  H01L2924/01088 ,  H01L2924/014 ,  H01L2924/04953 ,  H05K3/3478 ,  H05K2203/041 ,  H05K2203/082

摘要： Balls are sucked onto a carrier board so as to be temporarily arranged in a ball arrangement region of the board, and then the balls are transferred and bonded onto an objective substance with their positions being adjusted. Gas blow is applied to the temporarily arranged balls or alternatively the temporarily arranged balls are sucked, so as to remove excess balls other than balls that have been exactly sucked onto the ball arrangement region. Cooperation with application of fine vibration to the carrier board makes the removal of the excess balls more efficient.

摘要翻译： 将球吸附到载体板上，以便暂时地布置在板的球形布置区域中，然后将球转移并粘合到目标物质上并调整它们的位置。 对临时布置的球施加气体吹动，或者临时布置的球被吸入，以便去除已经精确吸入球配置区域的球以外的多余的球。 携带精细振动的合作使得多余的滚珠更加有效的去除。

公开(公告)号：US07045388B2

公开(公告)日：2006-05-16

申请号：US09254119

申请日：1997-08-27

申请人： Kohei Tatsumi ,  Kenji Shimokawa ,  Eiji Hashino

发明人： Kohei Tatsumi ,  Kenji Shimokawa ,  Eiji Hashino

IPC分类号： H01L21/48 ,  B23K31/00 ,  H01R43/00

CPC分类号： H01L24/05 ,  H01L24/03 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/742 ,  H01L24/81 ,  H01L24/94 ,  H01L2224/0345 ,  H01L2224/03828 ,  H01L2224/0401 ,  H01L2224/05023 ,  H01L2224/05026 ,  H01L2224/05027 ,  H01L2224/05073 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/05084 ,  H01L2224/05111 ,  H01L2224/05116 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05171 ,  H01L2224/05184 ,  H01L2224/05554 ,  H01L2224/05555 ,  H01L2224/05568 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/11003 ,  H01L2224/11334 ,  H01L2224/11849 ,  H01L2224/13013 ,  H01L2224/13014 ,  H01L2224/13111 ,  H01L2224/13116 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/14131 ,  H01L2224/16227 ,  H01L2224/81815 ,  H01L2224/94 ,  H01L2924/00013 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01061 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  Y10T29/49222 ,  H01L2924/00014 ,  H01L2924/01049 ,  H01L2224/1308 ,  H01L2224/13099 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05611 ,  H01L2224/05669 ,  H01L2224/11 ,  H01L2924/00012

摘要： A semiconductor device (1) comprising electrodes formed on a semiconductor chip (2) and bumps (3) which consist of a low melting point metal ball spherically formed and having a given size and which are adhesive bonded to the electrodes (5). The electrodes (5) are formed from an electrode material of Cu or a Cu alloy, Al or an Al alloy, or Au or a Au alloy. When the electrode material is composed of Al or an Al alloy, the electrodes contain, on the electrode material layer of Al or an Al alloy, at least one layer (6) composed of a metal or metal alloy (preferably a metal selected form Ti, W, Ni, Cr, Au, Pd, Cu, Pt, Ag, Sn or Pb, or an alloy of these metals) having a melting point higher than the electrode material. The low melting point metal balls (3) are adhesive bonded to the electrodes (5) preferably with a flux. The low melting point metal balls (3) adhesive bonded to the respective electrodes (3) may also be reflowed to form semispherical bumps (10) before use.

摘要翻译： 一种半导体器件（1），包括形成在半导体芯片（2）上的电极和由球形并且具有给定尺寸并且与电极（5）粘合的低熔点金属球组成的凸块（3）。 电极（5）由Cu或Cu合金，Al或Al合金或Au或Au合金的电极材料形成。 当电极材料由Al或Al合金构成时，电极在Al或Al合金的电极材料层上含有至少一层由金属或金属合金（优选金属选自Ti ，W，Ni，Cr，Au，Pd，Cu，Pt，Ag，Sn或Pb，或这些金属的合金）。 低熔点金属球（3）优选用助焊剂粘合到电极（5）上。 粘结到各个电极（3）上的粘合剂的低熔点金属球（3）也可以在使用前被回流以形成半球形凸块（10）。

公开(公告)号：US5576458A

公开(公告)日：1996-11-19

申请号：US407612

申请日：1995-03-21

申请人： Takeshi Minami ,  Kazuhiko Hamato ,  Kenji Shimokawa ,  Yoshimi Shiroto

发明人： Takeshi Minami ,  Kazuhiko Hamato ,  Kenji Shimokawa ,  Yoshimi Shiroto

IPC分类号： B01J31/18 ,  B01J31/16 ,  C07B61/00 ,  C07C51/12 ,  C07C51/47 ,  C07C53/08 ,  C07C45/50

CPC分类号： C07C51/47 ,  C07C51/12 ,  B01J31/165

摘要： In the production step, alcohol is reacted with carbon monoxide in a reaction solvent in the presence of a rhodium-containing solid catalyst obtained by immobilizing rhodium in an insoluble carrier (I) containing a pyridine ring in its resin structure and an alkyl iodide containing an alkyl group of 1 to 5 carbon atoms, to produce a reaction product having a water content of 0.5 to 10% by weight; and in the subsequent removing step, an organic carboxylic acid is separated and recovered from the reaction product, and the recovered organic carboxylic acid is contacted with an insoluble carrier (II) containing a pyridine ring in its resin structure, to remove an iodide contained in the organic carboxylic acid.

摘要翻译： 在制造工序中，使醇与反应溶剂中的一氧化碳反应，在含有固体催化剂的铑固体催化剂的存在下，将铑固定在其树脂结构中含有吡啶环的不溶性载体（I）中， 1〜5个碳原子的烷基，得到含水率为0.5〜10重量％的反应产物; 在随后的除去步骤中，将有机羧酸从反应产物中分离回收，回收的有机羧酸与其树脂结构中含有吡啶环的不溶性载体（II）接触，除去 有机羧酸。

公开(公告)号：US5501913A

公开(公告)日：1996-03-26

申请号：US791653

申请日：1991-11-13

申请人： Kenji Shimokawa ,  Norikazu Kawamura

发明人： Kenji Shimokawa ,  Norikazu Kawamura

IPC分类号： G11B11/105 ,  H01F10/32 ,  G11B5/66 ,  C04B35/00

CPC分类号： B82Y25/00 ,  G11B11/10584 ,  G11B11/10586 ,  H01F10/3209 ,  Y10S428/90 ,  Y10T428/12875 ,  Y10T428/12931

摘要： A garnet polycrystalline film for a magneto-optical recording medium including at least two layers of polycrystalline garnet represented by Bi.sub.x R.sub.3-x M.sub.Y Fe.sub.5-Y O.sub.12, where 0.ltoreq.X.ltoreq.3, 0 Y.ltoreq.5, R represents one or more rare earth elements containing yttrium, and M represents Ga, Al or In, wherein crystal lattice constants of these adjacent two layers are different from each other by .+-.0.3% or more, and an average crystal grain diameter of one of the layers is smaller than that of the other layer and 1 .mu.m or less, and a magneto-optical recording disk using this garnet polycrystalline film.

摘要翻译： 一种用于磁光记录介质的石榴石多晶膜，其包括由BixR3-xMYFe5-YO12表示的至少两层多晶石榴石，其中0≤X= 3,0Y = 5，R表示一个或多个 含有钇的稀土元素，M表示Ga，Al或In，其中这些相邻两层的晶格常数彼此不同，为+/- 0.3％以上，其中一层的平均晶粒直径为 小于另一层的1μm以下，以及使用该石榴石多晶膜的磁光记录盘。

公开(公告)号：US5364963A

公开(公告)日：1994-11-15

申请号：US169639

申请日：1993-12-20

申请人： Takeshi Minami ,  Kenji Shimokawa ,  Kazuhiko Hamato ,  Yoshimi Shiroto ,  Noriyuki Yoneda

发明人： Takeshi Minami ,  Kenji Shimokawa ,  Kazuhiko Hamato ,  Yoshimi Shiroto ,  Noriyuki Yoneda

IPC分类号： B01J31/16 ,  B01J31/18 ,  C07C51/12 ,  C07C45/50 ,  B01J20/26 ,  B01J23/40

CPC分类号： B01J31/1658 ,  B01J31/181 ,  C07C51/12 ,  B01J2531/822 ,  Y10S502/507

摘要： A methanol carbonylation catalyst includes a rhodium complex supported on a porous, cross-linked vinylpyridine resin, wherein the vinylpyridine resin has a cross-linking degree of 30-60%, a pore volume of 0.1-0.4 ml/g and an average pore diameter of 20-100 nm. The catalyst may be prepared by contacting the pyridine ring-containing resin with an aqueous solution containing rhodium ion and then contacting the resulting rhodium ion-carrying resin with carbon monoxide and an alkyl iodide in an organic solvent to convert the rhodium ion to a rhodium complex bound to the resin. Acetic acid is produced by reacting carbon monoxide with methanol at a temperature of 140.degree.-250.degree. C. and a partial pressure of carbon monoxide of 7-30 kg/cm.sup.2 in the presence of an alkyl iodide and the above catalyst.

摘要翻译： 甲醇羰基化催化剂包括负载在多孔交联乙烯基吡啶树脂上的铑络合物，其中乙烯基吡啶树脂的交联度为30-60％，孔体积为0.1-0.4ml / g，平均孔径 为20-100nm。 催化剂可以通过使含吡啶环的树脂与含有铑离子的水溶液接触，然后使所得的含铑离子的树脂与一氧化碳和烷基碘在有机溶剂中接触来将铑离子转化成铑络合物 结合树脂。 在烷基碘和上述催化剂的存在下，一氧化碳与甲醇在140〜250℃的温度和一氧化碳分压为7〜30kg / cm 2下反应生成乙酸。

公开(公告)号：US06509645B2

公开(公告)日：2003-01-21

申请号：US09350125

申请日：1999-07-09

申请人： Kohei Tatsumi ,  Kenji Shimokawa ,  Eiji Hashino ,  Nobuo Takeda ,  Atsuyuki Fukano

发明人： Kohei Tatsumi ,  Kenji Shimokawa ,  Eiji Hashino ,  Nobuo Takeda ,  Atsuyuki Fukano

IPC分类号： H01L2348

CPC分类号： H01L29/0657 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L25/065 ,  H01L2224/13099 ,  H01L2224/16145 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10155 ,  H01L2924/1017 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2224/48

摘要： A spherical semiconductor device includes a spherical semiconductor element having one or more electrodes on its surface. Spherical conductive bumps are formed at the positions of the electrodes. The electrodes are so arranged as to contact a common plane. Spherical bumps constituting a group to be connected to the outside protrude above the spherical semiconductor element such that a predetermined gap is formed between a plane or a spherical surface capable of contacting the spherical bumps and the surface of the spherical semiconductor element. The spherical semiconductor device is connected to various circuit boards or another semiconductor device through the spherical bumps. This affords easy and accurate electrical connections to the outside.

公开(公告)号：US5899376A

公开(公告)日：1999-05-04

申请号：US677392

申请日：1996-07-09

申请人： Kouhei Tatumi ,  Kenji Shimokawa ,  Eiji Hashino

发明人： Kouhei Tatumi ,  Kenji Shimokawa ,  Eiji Hashino

IPC分类号： B23K1/20 ,  H05K3/34

CPC分类号： B23K1/203 ,  H01L24/11 ,  H05K3/3489 ,  B23K2201/40 ,  H01L2924/01322

摘要： A process of transferring a flux on electrodes of a semiconductor chip, a film carrier, or a substrate, the process comprising: using a transfer apparatus including a transfer baseplate having protrusions corresponding to said electrodes; dipping the tips of the protrusions of the transfer baseplate in a flux bath to cause the flux to stick to the tips; then aligning the protrusions of the transfer baseplate with the electrodes; and transferring the stuck flux onto the electrodes from the tips.

摘要翻译： 一种在半导体芯片，薄膜载体或基板的电极上传送磁通的方法，该方法包括：使用包括具有对应于所述电极的突起的转印基板的转印装置; 将转移基板的突起的尖端浸入助熔剂槽中以使焊剂粘附到尖端; 然后将转印基板的突起与电极对准; 并将粘附的助焊剂从尖端转移到电极上。

公开(公告)号：US5765744A

公开(公告)日：1998-06-16

申请号：US678474

申请日：1996-07-09

申请人： Kouhei Tatumi ,  Kenji Shimokawa ,  Eiji Hashino

发明人： Kouhei Tatumi ,  Kenji Shimokawa ,  Eiji Hashino

IPC分类号： B23K3/06 ,  H01L21/48 ,  H01L21/60 ,  H01L21/68 ,  H05K3/34 ,  B23K1/00 ,  B23K31/02

CPC分类号： H05K3/3478 ,  B23K3/0623 ,  H01L21/4853 ,  H01L21/6835 ,  H01L24/11 ,  B23K2201/36 ,  H01L2224/11003 ,  H01L2224/11334 ,  H01L2224/13099 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/14 ,  H05K2203/0113 ,  H05K2203/0278 ,  H05K2203/0338 ,  H05K2203/041 ,  H05K2203/082

摘要： A process of producing small metal bumps includes the steps of simultaneously holding small metal balls on an arrangement baseplate in the positions corresponding to those of electrodes of a semiconductor chip, a film carrier, or a substrate; aligning the small metal balls held on the arrangement baseplate with the electrodes; lightly pressing the small metal balls against the electrodes; to provisionally fix the balls to the electrodes; and pressing the provisionally fixed small metal balls to flatten the pressed surfaces of the small metal balls, and at the same time, to bond the small metal balls to the electrodes.

摘要翻译： 制造小金属凸块的工艺包括以下步骤：在与半导体芯片，薄膜载体或基板的电极对应的位置上同时将小金属球保持在布置基板上; 将安置基板上保持的小金属球与电极对准; 轻轻地将小金属球压在电极上; 将球临时固定到电极; 并且按压临时固定的小金属球来使小金属球的压制表面变平，同时将小金属球粘合到电极上。