公开(公告)号：US06380622B1

公开(公告)日：2002-04-30

申请号：US09435840

申请日：1999-11-08

申请人： Yasuyoshi Hirai ,  Kazuhito Nomura ,  Tomoatsu Makino ,  Takahiko Yoshida ,  Masahiro Shiozawa ,  Atsushi Hashikawa ,  Muneo Yorinaga

发明人： Yasuyoshi Hirai ,  Kazuhito Nomura ,  Tomoatsu Makino ,  Takahiko Yoshida ,  Masahiro Shiozawa ,  Atsushi Hashikawa ,  Muneo Yorinaga

IPC分类号： H01L2329

CPC分类号： H01L24/72 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01058 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01088 ,  H01L2924/09701 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/30105 ,  Y10T428/25 ,  Y10T428/251 ,  H01L2924/00

摘要： A pressed-contact type semiconductor device in which a main electrode surface of a semiconductor element is contacted with an electrode plate by a pressed-contact, which can reduce both an electric resistance and a thermal resistance between the main electrode surface of the semiconductor element and the electrode plate. The pressed-contact type semiconductor device (100) is provided with a semiconductor element (1) having electrode surfaces, a pair of electrode plates (2) contacted with the electrode surfaces by the pressed-contact, a pair of insulating plates (3) contacted with the outer side of the pair of the electrode plates by the pressed-contact, and a pair of radiating plates (4) contacted with the outer side of the pair of the insulating plates by the pressed-contact. A contact intermediary member (5), which is made up of particle member having at least thermal conductivity and electric conductivity, is intercalated between the semiconductor element and the electrode plate. The particle member of the contact intermediary member includes large particles 5a having an average particle diameter of more than 2 &mgr;m, and small particles 5b having an average particle diameter of to or less than 2 &mgr;m. Contact intermediary members (6, 7) are intercalated into gaps generated between the electrode plate and the insulating plate, and between the insulating plate and the radiating plate so as to fill up these gaps. The contact intemediary members are made of powder material having at least thermal conductivity.

摘要翻译： 一种压接式半导体器件，其中半导体元件的主电极表面通过压接接触与电极板接触，这可以降低半导体元件的主电极表面和第二半导体元件的主电极表面之间的电阻和热阻 电极板。 压接型半导体装置（100）具备电极面的半导体元件（1），通过按压接触与电极面接触的一对电极板（2），一对绝缘板（3） 通过按压接触与一对电极板的外侧接触，并且通过按压接触与一对绝缘板的外侧接触的一对散热板（4）。 由半导体元件和电极板之间插入由至少具有导热性和导电性的粒子构成的接触中间构件（5）。 接触中间构件的颗粒构件包括平均粒径大于2μm的大颗粒5a和平均粒径为或小于2μm的小颗粒5b。 接触中间构件（6,7）插入在电极板和绝缘板之间以及绝缘板和散热板之间产生的间隙中，以填满这些间隙。 接触中间部件由具有至少导热性的粉末材料制成。

公开(公告)号：US06703707B1

公开(公告)日：2004-03-09

申请号：US09717227

申请日：2000-11-22

申请人： Kuniaki Mamitsu ,  Yasuyoshi Hirai ,  Kazuhito Nomura ,  Yutaka Fukuda ,  Kazuo Kajimoto ,  Takeshi Miyajima ,  Tomoatsu Makino ,  Yoshimi Nakase

发明人： Kuniaki Mamitsu ,  Yasuyoshi Hirai ,  Kazuhito Nomura ,  Yutaka Fukuda ,  Kazuo Kajimoto ,  Takeshi Miyajima ,  Tomoatsu Makino ,  Yoshimi Nakase

IPC分类号： H01L2334

CPC分类号： H01L24/33 ,  H01L23/051 ,  H01L23/4006 ,  H01L23/4334 ,  H01L24/32 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L2224/05599 ,  H01L2224/291 ,  H01L2224/29111 ,  H01L2224/29116 ,  H01L2224/2929 ,  H01L2224/29299 ,  H01L2224/29386 ,  H01L2224/32245 ,  H01L2224/33 ,  H01L2224/37147 ,  H01L2224/40137 ,  H01L2224/451 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/84801 ,  H01L2224/85399 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/0101 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01052 ,  H01L2924/01057 ,  H01L2924/01058 ,  H01L2924/01061 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01084 ,  H01L2924/01094 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/07811 ,  H01L2924/10253 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/30107 ,  H01L2924/351 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2924/0665 ,  H01L2924/05442 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device includes two semiconductor chips that are interposed between a pair of radiation members, and thermally and electrically connected to the radiation members. One of the radiation members has two protruding portions and front ends of the protruding portions are connected to principal electrodes of the semiconductor chips. The radiation members are made of a metallic material containing Cu or Al as a main component. The semiconductor chips and the radiation members are sealed with resin with externally exposed radiation surfaces.

摘要翻译： 半导体器件包括插入在一对辐射构件之间并且热和电连接到辐射构件的两个半导体芯片。 辐射部件中的一个具有两个突出部分，并且突出部分的前端连接到半导体芯片的主电极。 辐射构件由含有Cu或Al作为主要成分的金属材料制成。 半导体芯片和辐射构件用具有外部暴露的辐射表面的树脂密封。

公开(公告)号：US09518901B2

公开(公告)日：2016-12-13

申请号：US13807605

申请日：2012-06-28

申请人： Yoshihide Hayashizaki ,  Kengo Usui ,  Saori Goda ,  Kazuhito Nomura ,  Yuki Kawai

发明人： Yoshihide Hayashizaki ,  Kengo Usui ,  Saori Goda ,  Kazuhito Nomura ,  Yuki Kawai

IPC分类号： C12Q1/68 ,  C12P19/34 ,  C12P19/00 ,  C12P19/26 ,  C12P19/28 ,  C12P19/30 ,  G01N1/34 ,  C12N15/10

CPC分类号： G01N1/34 ,  C12N15/1003 ,  C12Q1/6806

摘要： The present invention is to provide a pretreatment method that allows RNA to be detected promptly and simply. RNA degradation activity due to lactoferrin present in the human rhinal mucosa is inhibited, for example, by adding iron ion and carbonate ion to a biological sample that contains the human rhinal mucosa. With the pretreated biological sample, an RNA virus gene can be amplified by a reverse transcriptase. Iron ion and carbonate ion can also inhibit reverse transcriptase inhibition due to lysozyme C contained in the human rhinal mucosa. Further, it is preferable to remove the envelope of the RNA virus by adding SDS to the biological sample that contains the human rhinal mucosa.

摘要翻译： 本发明提供一种能够及时且简单地检测RNA的预处理方法。 例如，通过将铁离子和碳酸根离子加入到含有人类鼻粘膜的生物样品中，可抑制由于存在于人类鼻粘膜中的乳铁蛋白引起的RNA降解活性。 通过预处理的生物样品，RNA病毒基因可以通过逆转录酶扩增。 铁离子和碳酸根离子也可以抑制人类鼻粘膜中包含的溶菌酶C的逆转录酶抑制。 此外，优选通过向包含人类鼻粘膜的生物样品中加入SDS来除去RNA病毒的包膜。

公开(公告)号：US20130302783A1

公开(公告)日：2013-11-14

申请号：US13807605

申请日：2012-06-28

申请人： Yoshihide Hayashizaki ,  Kengo Usui ,  Saori Goda ,  Kazuhito Nomura ,  Yuki Kawai

发明人： Yoshihide Hayashizaki ,  Kengo Usui ,  Saori Goda ,  Kazuhito Nomura ,  Yuki Kawai

IPC分类号： G01N1/34

CPC分类号： G01N1/34 ,  C12N15/1003 ,  C12Q1/6806

摘要： The present invention is to provide a pretreatment method that allows RNA to be detected promptly and simply. RNA degradation activity due to lactoferrin present in the human rhinal mucosa is inhibited, for example, by adding iron ion and carbonate ion to a biological sample that contains the human rhinal mucosa. With the pretreated biological sample, an RNA virus gene can be amplified by a reverse transcriptase. Iron ion and carbonate ion can also inhibit reverse transcriptase inhibition due to lysozyme C contained in the human rhinal mucosa. Further, it is preferable to remove the envelope of the RNA virus by adding SDS to the biological sample that contains the human rhinal mucosa.

摘要翻译： 本发明提供一种能够及时且简单地检测RNA的预处理方法。 例如，通过将铁离子和碳酸根离子加入到含有人类鼻粘膜的生物样品中，可抑制由于存在于人类鼻粘膜中的乳铁蛋白引起的RNA降解活性。 通过预处理的生物样品，RNA病毒基因可以通过逆转录酶扩增。 铁离子和碳酸根离子也可以抑制人类鼻粘膜中包含的溶菌酶C的逆转录酶抑制。 此外，优选通过向包含人类鼻粘膜的生物样品中加入SDS来除去RNA病毒的包膜。

公开(公告)号：US20110236900A1

公开(公告)日：2011-09-29

申请号：US13130993

申请日：2009-11-27

申请人： Yoshihide Hayashizaki ,  Masayoshi Itoh ,  Hajime Kanamori ,  Kengo Usui ,  Kazuhito Nomura

发明人： Yoshihide Hayashizaki ,  Masayoshi Itoh ,  Hajime Kanamori ,  Kengo Usui ,  Kazuhito Nomura

IPC分类号： C12Q1/68 ,  C07K14/195 ,  C07H21/04 ,  C12N5/10 ,  C12P21/06 ,  C12N1/00

CPC分类号： C07K14/195 ,  G01N33/5308 ,  G01N2333/32

摘要： A method for determining the presence or absence of a mutation on the basis of the presence or absence of amplification with high reliability is provided. A target sequence including a target site contained in a sample nucleic acid is amplified using a primer that can hybridize to a region including the target site contained in the sample nucleic acid in the presence of a novel MutS having an amino acid sequence of SEQ ID NO: 2, and then the presence or absence of a mutation at the target site is determined on the basis of the presence or absence of amplification. The novel MutS binds more specifically to a mismatched base pair than to a fully-matched base pair, whereby an extension reaction caused by a mismatch-binding primer is suppressed. Thus, according to the present invention, the presence or absence of a mutation can be determined with high reliability.

摘要翻译： 提供了一种基于高可靠性的扩增的存在或不存在来确定突变的存在或不存在的方法。 包含样品核酸中包含的靶位点的靶序列使用可以在含有氨基酸序列SEQ ID NO的新型MutS的存在下与包含在样品核酸中的靶位点的区域杂交的引物进行扩增 ：2，然后基于扩增的存在或不存在来确定靶位点处的突变的存在或不存在。 新的MutS更具体地结合失配的碱基对而不是完全匹配的碱基对，由此抑制由错配结合引物引起的延伸反应。 因此，根据本发明，可以高可靠性确定突变的存在或不存在。

公开(公告)号：US07145254B2

公开(公告)日：2006-12-05

申请号：US10201556

申请日：2002-07-24

申请人： Naohiko Hirano ,  Takanori Teshima ,  Yoshimi Nakase ,  Kenji Yagi ,  Yasushi Ookura ,  Kuniaki Mamitsu ,  Kazuhito Nomura ,  Yutaka Fukuda

发明人： Naohiko Hirano ,  Takanori Teshima ,  Yoshimi Nakase ,  Kenji Yagi ,  Yasushi Ookura ,  Kuniaki Mamitsu ,  Kazuhito Nomura ,  Yutaka Fukuda

IPC分类号： H01L23/10 ,  H01L23/28

CPC分类号： H01L24/33 ,  H01L21/565 ,  H01L23/367 ,  H01L23/3736 ,  H01L23/4334 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L2224/05624 ,  H01L2224/29111 ,  H01L2224/32014 ,  H01L2224/32245 ,  H01L2224/33 ,  H01L2224/33181 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2224/83101 ,  H01L2224/83203 ,  H01L2224/83815 ,  H01L2224/85399 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01068 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01088 ,  H01L2924/0132 ,  H01L2924/10158 ,  H01L2924/10253 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/15724 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/18301 ,  H01L2924/30107 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device includes a semiconductor chip that generates heat in operation, a pair of heat sinks for cooling the chip, and a mold resin, in which the chip and the heat sinks are embedded. The thickness t1 of the chip and the thickness t2 of one of heat sinks that is joined to the chip using a solder satisfy the equation of t2/t1≧5. Furthermore, the thermal expansion coefficient α1 of the heat sinks and the thermal expansion coefficient α2 of the mold resin satisfy the equation of 0.5≦α2/α1≦1.5. In addition, the surface of the chip that faces the solder has a roughness Ra that satisfies the equation of Ra≦500 nm. Moreover, the solder is a Sn-based solder to suppress relaxation of a compressive stress in the chip, which is caused by the creeping of the solder.

摘要翻译： 半导体器件包括在工作中产生热的半导体芯片，用于冷却芯片的一对散热器和嵌入芯片和散热片的模制树脂。 使用焊料与芯片接合的芯片的厚度t 1和散热器之一的厚度t 2满足t 2 / t 1> = 5的等式。 此外，散热器的热膨胀系数α1和模制树脂的热膨胀系数α2满足0.5≤α2/α1<= 1.5的等式。 此外，面向焊料的芯片的表面具有满足Ra <= 500nm的等式的粗糙度Ra。 此外，焊料是Sn基焊料，以抑制由焊料蠕变引起的芯片中的压缩应力松弛。

公开(公告)号：US06998707B2

公开(公告)日：2006-02-14

申请号：US10699746

申请日：2003-11-04

申请人： Yutaka Fukuda ,  Kazuhito Nomura ,  Yoshimi Nakase

发明人： Yutaka Fukuda ,  Kazuhito Nomura ,  Yoshimi Nakase

IPC分类号： H01L23/34

CPC分类号： H01L24/33 ,  H01L23/051 ,  H01L23/4006 ,  H01L23/4334 ,  H01L24/32 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L2224/05599 ,  H01L2224/291 ,  H01L2224/29111 ,  H01L2224/29116 ,  H01L2224/2929 ,  H01L2224/29299 ,  H01L2224/29386 ,  H01L2224/32245 ,  H01L2224/33 ,  H01L2224/37147 ,  H01L2224/40137 ,  H01L2224/451 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/84801 ,  H01L2224/85399 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/0101 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01052 ,  H01L2924/01057 ,  H01L2924/01058 ,  H01L2924/01061 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01084 ,  H01L2924/01094 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/07811 ,  H01L2924/10253 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/30107 ,  H01L2924/351 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2924/0665 ,  H01L2924/05442 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device includes two semiconductor chips that are interposed between a pair of radiation members, and thermally and electrically connected to the radiation members. One of the radiation members has two protruding portions and front ends of the protruding portions are connected to principal electrodes of the semiconductor chips. The radiation members are made of a metallic material containing Cu or Al as a main component. The semiconductor chips and the radiation members are sealed with resin with externally exposed radiation surfaces.