摘要:
A semiconductor device includes two semiconductor chips that are interposed between a pair of radiation members, and thermally and electrically connected to the radiation members. One of the radiation members has two protruding portions and front ends of the protruding portions are connected to principal electrodes of the semiconductor chips. The radiation members are made of a metallic material containing Cu or Al as a main component. The semiconductor chips and the radiation members are sealed with resin with externally exposed radiation surfaces.
摘要:
A semiconductor device includes a semiconductor chip that generates heat in operation, a pair of heat sinks for cooling the chip, and a mold resin, in which the chip and the heat sinks are embedded. The thickness t1 of the chip and the thickness t2 of one of heat sinks that is joined to the chip using a solder satisfy the equation of t2/t1≧5. Furthermore, the thermal expansion coefficient α1 of the heat sinks and the thermal expansion coefficient α2 of the mold resin satisfy the equation of 0.5≦α2/α1≦1.5. In addition, the surface of the chip that faces the solder has a roughness Ra that satisfies the equation of Ra≦500 nm. Moreover, the solder is a Sn-based solder to suppress relaxation of a compressive stress in the chip, which is caused by the creeping of the solder.
摘要:
A semiconductor device includes two semiconductor chips that are interposed between a pair of radiation members, and thermally and electrically connected to the radiation members. One of the radiation members has two protruding portions and front ends of the protruding portions are connected to principal electrodes of the semiconductor chips. The radiation members are made of a metallic material containing Cu or Al as a main component. The semiconductor chips and the radiation members are sealed with resin with externally exposed radiation surfaces.
摘要:
A semiconductor device includes a first conductive member, a second conductive member, a semiconductor chip, which is located between the conductive members, a bonding member, which is located between the first conductive member and the semiconductor chip, another bonding member, which is located between the second conductive member and the semiconductor chip, a molding resin, which is located between the first and second conductive members to seal the semiconductor chip, and a bonding member anti-sticking means, which is located between the molding resin and a surface of one member selected from the group consisting of the semiconductor chip and the conductive members. The bonding member anti-sticking means prevents the bonding members from sticking to the surface in the manufacturing process. As a result, the otherwise insufficient connection due to the sticking between the molding resin and the surface is improved, and the semiconductor device becomes durable in electric performance.
摘要:
A thin circuit substrate and a circuit module are arranged such that the circuit module includes an IC mounted on a circuit substrate, the IC includes an IC body and an solder bump located on a mounting surface of the IC body, and the circuit substrate includes a substrate including a recess formed by recessing a portion of a mounting surface of the substrate on which the IC is to be mounted, and a terminal protruding from the mounting surface of the substrate. The terminal is to be electrically connected to the solder bump.
摘要:
An object is to provide an artificial vision system ensuring a wide field of view without damaging a retina. In the artificial vision system, a plurality of electrodes (23) are to be implanted so as to stick in an optic papilla of an eye of a patient. A signal for stimulation pulse is generated based on an image captured by an image pick up device (11) to be disposed outside a body of the patient. The electrical stimulation signals outputted from the electrodes (23) based on the signals for stimulation pulse stimulate an optic nerve of the eye, thereby enabling the patient to visually recognize the image from the image pickup device (11).
摘要:
A semiconductor device includes: a semiconductor substrate having a first semiconductor layer and a second semiconductor layer formed on a first surface; a diode having a first electrode and a second electrode; a control pad; a control electrode electrically coupled with the control pad; and an insulation member. The first electrode is formed on a second surface of the first semiconductor layer. The second electrode is formed on the first surface. Current flows between the first electrode and the second electrode. The control pad is arranged on the first surface so that the pad inputs a control signal for controlling an injection amount of a carrier into the first semiconductor layer. The insulation member insulates between the control electrode and the second electrode and between the control electrode and the semiconductor substrate.
摘要:
An electrical part comprising a lead conductor and a sealed vessel including a metal layer, the lead conductor extending from the inside of the sealed vessel to the outside, wherein the lead conductor and the sealed vessel are fusion-bonded through a thermal adhesive layer at the sealing portion, and wherein a softening-resistant layer having through holes made in the thickness direction is provided between the lead conductor and the metal layer at the sealing portion. A nonaqueous electrolyte cell comprising an electrode and a nonaqueous electrolyte both enclosed inside the sealed vessel. A sealed vessel and a lead conductor having an insulating coating layer, both of which can be used in the electrical part or the like.
摘要:
In a method of manufacturing a semiconductor device, a semiconductor substrate of a first conductivity type having first and second surfaces is prepared. Second conductivity type impurities for forming a collector layer are implanted to the second surface using a mask that has an opening at a portion where the collector layer will be formed. An oxide layer is formed by enhanced-oxidizing the collector layer. First conductivity type impurities for forming a first conductivity type layer are implanted to the second surface using the oxide layer as a mask. A support base is attached to the second surface and a thickness of the semiconductor substrate is reduced from the first surface. An element part including a base region, an emitter region, a plurality of trenches, a gate insulating layer, a gate electrode, and a first electrode is formed on the first surface of the semiconductor substrate.
摘要:
PER when a wireless apparatus is connected with a predetermined wireless access point is estimated on the basis of three parameters of the received signal strength, the interference signal strength, and the interference adjacency, which have been transmitted from the wireless access point, then the communication throughput is calculated by using the estimated PER, and the connection with a wireless access point expected to have highest communication efficiency is performed. As a result, it is possible to select a wireless access point having high communication efficiency with good precision, as compared with a method, in the related art, of simply performing a connection with a wireless access point having high received signal strength or a method of simply performing a connection with a wireless access point where an interference wave is strong.