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    SEMICONDUCTOR LIGHT EMITTING DEVICE
    1.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
    半导体发光器件

    公开(公告)号：US20130285064A1

    公开(公告)日：2013-10-31

    申请号：US13598504

    申请日：2012-08-29

    申请人： Akihiro KOJIMA ,  Hideto FURUYAMA ,  Miyoko SHIMADA ,  Yosuke AKIMOTO ,  Hideyuki TOMIZAWA ,  Yoshiaki SUGIZAKI

    发明人： Akihiro KOJIMA ,  Hideto FURUYAMA ,  Miyoko SHIMADA ,  Yosuke AKIMOTO ,  Hideyuki TOMIZAWA ,  Yoshiaki SUGIZAKI

    IPC分类号： H01L33/44 ,  H01L33/32

    CPC分类号： H01L33/44 ,  H01L33/486 ,  H01L33/50

    摘要： According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a p-side electrode, an n-side electrode, a phosphor layer, and a transparent film. The semiconductor layer has a first face, a second face opposite to the first face, and a light emitting layer. The p-side electrode is provided on the second face in an area including the light emitting layer. The n-side electrode is provided on the second face in an area not including the light emitting layer. The phosphor layer is provided on the first face. The phosphor layer includes a transparent resin and phosphor dispersed in the transparent resin. The transparent film is provided on the phosphor layer and has an adhesiveness lower than an adhesiveness of the transparent resin.

    摘要翻译： 根据一个实施例，半导体发光器件包括半导体层，p侧电极，n侧电极，荧光体层和透明膜。 半导体层具有第一面，与第一面相反的第二面和发光层。 p侧电极设置在包括发光层的区域的第二面上。 n侧电极设置在不包括发光层的区域的第二面上。 磷光体层设置在第一面上。 荧光体层包括分散在透明树脂中的透明树脂和荧光体。 透明膜设置在荧光体层上，粘合性低于透明树脂的粘合性。

    SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME
    2.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME 有权
    半导体发光器件及其制造方法

    公开(公告)号：US20130313588A1

    公开(公告)日：2013-11-28

    申请号：US13601568

    申请日：2012-08-31

    申请人： Akihiro KOJIMA ,  Yosuke AKIMOTO ,  Hideyuki TOMIZAWA ,  Hideko MUKAIDA ,  Miyoko SHIMADA ,  Yoshiaki SUGIZAKI ,  Hideto FURUYAMA

    发明人： Akihiro KOJIMA ,  Yosuke AKIMOTO ,  Hideyuki TOMIZAWA ,  Hideko MUKAIDA ,  Miyoko SHIMADA ,  Yoshiaki SUGIZAKI ,  Hideto FURUYAMA

    IPC分类号： H01L33/52

    CPC分类号： H01L33/486 ,  H01L33/387 ,  H01L33/62

    摘要： According to an embodiment, a semiconductor light emitting device includes a semiconductor layer having a light emitting layer. The device also includes a p-side electrode provided on a first region including the light emitting layer; an n-side electrode provided on a second region layer not including the light emitting layer; and a first insulating film having a first opening communicating with the p-side electrode and a second opening communicating with the n-side electrode. A p-side interconnection is provided on the first insulating film and electrically connected to the p-side electrode through the first opening. An n-side interconnection is provided on the first insulating film and electrically connected to the n-side electrode through the second opening. The p-side interconnection has a plurality of protrusive parts protruding toward the n-side interconnection, and the n-side interconnection has a plurality of portions extending between the protrusive parts of the p-side interconnection.

    摘要翻译： 根据实施例，半导体发光器件包括具有发光层的半导体层。 该装置还包括设置在包括发光层的第一区域上的p侧电极; 设置在不包括发光层的第二区域层上的n侧电极; 以及具有与p侧电极连通的第一开口的第一绝缘膜和与n侧电极连通的第二开口。 p侧互连设置在第一绝缘膜上，并通过第一开口与p侧电极电连接。 n侧互连设置在第一绝缘膜上，并通过第二开口与n侧电极电连接。 p侧互连具有向n侧互连突出的多个突出部，并且n侧互连具有在p侧互连的突出部之间延伸的多个部分。

    SEMICONDUCTOR LIGHT EMITTING DEVICE
    3.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
    半导体发光器件

    公开(公告)号：US20130285090A1

    公开(公告)日：2013-10-31

    申请号：US13598393

    申请日：2012-08-29

    申请人： Hideto FURUYAMA ,  Yosuke AKIMOTO ,  Miyoko SHIMADA ,  Akihiro KOJIMA ,  Yoshiaki SUGIZAKI

    发明人： Hideto FURUYAMA ,  Yosuke AKIMOTO ,  Miyoko SHIMADA ,  Akihiro KOJIMA ,  Yoshiaki SUGIZAKI

    IPC分类号： H01L33/40

    CPC分类号： H01L33/504 ,  H01L24/97 ,  H01L33/46 ,  H01L33/501 ,  H01L33/52 ,  H01L33/60 ,  H01L33/62 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/181 ,  H01L2933/0091 ,  H01L2924/00

    摘要： According to one embodiment, a semiconductor light emitting device includes a light emitting element, a phosphor layer, and a fluorescent reflection film. The phosphor layer has a transparent medium, a phosphor dispersed in the transparent medium, and a particle dispersed in the transparent medium. The phosphor is excited by the excitation light so as to emit a fluorescence. The particle is a magnitude of not more than 1/10 a wavelength of the excitation light. The particle has a different refractive index from a refractive index of the transparent medium. The fluorescent reflection film is provided between the light emitting element and the phosphor layer. The fluorescent reflection film has a higher reflectance with respect to a fluorescent wavelength of the phosphor, than a reflectance with respect to the wavelength of the excitation light.

    摘要翻译： 根据一个实施例，半导体发光器件包括发光元件，荧光体层和荧光反射膜。 荧光体层具有透明介质，分散在透明介质中的荧光体和分散在透明介质中的粒子。 荧光体被激发光激发，从而发出荧光。 粒子的大小不大于激发光的波长的1/10。 该颗粒具有与透明介质的折射率不同的折射率。 荧光反射膜设置在发光元件和荧光体层之间。 荧光反射膜相对于荧光体的荧光波长具有比相对于激发光的波长的反射率更高的反射率。

    SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME
    5.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
    半导体发光器件及其制造方法

    公开(公告)号：US20130248904A1

    公开(公告)日：2013-09-26

    申请号：US13601487

    申请日：2012-08-31

    申请人： Yoshiaki SUGIZAKI ,  Akihiro Kojima ,  Hideto Furuyama ,  Yosuke Akimoto

    发明人： Yoshiaki SUGIZAKI ,  Akihiro Kojima ,  Hideto Furuyama ,  Yosuke Akimoto

    IPC分类号： H01L33/50

    CPC分类号： H01L33/647 ,  H01L25/0753 ,  H01L33/0095 ,  H01L33/20 ,  H01L33/385 ,  H01L33/502 ,  H01L33/505 ,  H01L2933/0016

    摘要： According to one embodiment, a semiconductor light emitting device includes: a semiconductor layer including a first face, a second face, a side face, and a light emitting layer; a p-side electrode provided on the second face; an n-side electrode provided on the side face; a first p-side metal layer provided on the p-side electrode; a first n-side metal layer provided on the periphery of the n-side electrode; a first insulating layer provided on a face on the second face side in the first n-side metal layer; a second p-side metal layer connected with the first p-side metal layer on the first p-side metal layer, and provided, extending from on the first p-side metal layer to on the first insulating layer; and a second n-side metal layer provided on a face on the second face side in the first n-side metal layer in a peripheral region of the semiconductor layer.

    摘要翻译： 根据一个实施例，半导体发光器件包括：包括第一面，第二面，侧面和发光层的半导体层; 设置在所述第二面上的p侧电极; 设置在所述侧面上的n侧电极; 设置在p侧电极上的第一p侧金属层; 设置在n侧电极的周围的第一n侧金属层; 设置在第一n侧金属层的第二面侧的面上的第一绝缘层; 第二p侧金属层，与第一p侧金属层上的第一p侧金属层连接，并且从第一p侧金属层延伸到第一绝缘层; 以及设置在半导体层的周边区域中的第一n侧金属层的第二面侧的面上的第二n侧金属层。

    ELECTRICAL DEVICE INCLUDING A FUNCTIONAL ELEMENT IN A CAVITY
    7.
    发明申请
    ELECTRICAL DEVICE INCLUDING A FUNCTIONAL ELEMENT IN A CAVITY 有权
    电气设备，包括一个功能元素在一个空间

    公开(公告)号：US20130032386A1

    公开(公告)日：2013-02-07

    申请号：US13647845

    申请日：2012-10-09

    申请人： Akihiro KOJIMA ,  Yoshiaki SUGIZAKI ,  Yoshiaki SHIMOOKA

    发明人： Akihiro KOJIMA ,  Yoshiaki SUGIZAKI ,  Yoshiaki SHIMOOKA

    IPC分类号： H05K1/16 ,  B05D5/00

    CPC分类号： B81B7/0038 ,  B81B2201/0221 ,  B81B2203/04 ,  B81C1/00476

    摘要： A substrate includes a functional element. An insulating first film forms a cavity which stores the functional element, together with the substrate, and includes a plurality of through-holes. An insulating second film covers the plurality of through-holes, is formed on the first film, and has a gas permeability which is higher than that of the first film. An insulating third film is formed on the second film and has a gas permeability which is lower than the second film. An insulating fourth film is formed on the third film and has an elasticity which is larger than the third film.

    摘要翻译： 衬底包括功能元件。 绝缘的第一膜形成空腔，其与基板一起存储功能元件，并且包括多个通孔。 绝缘的第二膜覆盖多个通孔，形成在第一膜上，并且具有比第一膜高的透气性。 在第二薄膜上形成绝缘的第三薄膜，其透气度低于第二薄膜。 绝缘的第四膜形成在第三膜上，并且具有大于第三膜的弹性。