利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

36 条记录 (耗时 0.022 秒)

    Semiconductor light emitting devices with graded composition light emitting layers
    2.
    发明授权
    Semiconductor light emitting devices with graded composition light emitting layers 有权
    具有渐变成分发光层的半导体发光器件

    公开(公告)号：US07122839B2

    公开(公告)日：2006-10-17

    申请号：US10977867

    申请日：2004-10-29

    申请人： Yu-Chen Shen ,  Michael R. Krames ,  Nathan F. Gardner

    发明人： Yu-Chen Shen ,  Michael R. Krames ,  Nathan F. Gardner

    IPC分类号： H01L27/15

    CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/06 ,  H01S5/3205 ,  H01S5/34333

    摘要： A III-nitride light emitting layer in a semiconductor light emitting device has a graded composition. The composition of the light emitting layer may be graded such that the change in the composition of a first element is at least 0.2% per angstrom of light emitting layer. Grading in the light emitting layer may reduce problems associated with polarization fields in the light emitting layer. The light emitting layer may be, for example InxGa1−xN, AlxGa1−xN, or InxAlyGa1−x−yN.

    摘要翻译： 半导体发光器件中的III族氮化物发光层具有渐变组成。 发光层的组成可以分级，使得第一元素的组成的变化为每发光层的至少0.2％。 在发光层中的分级可以减少与发光层中的极化场相关的问题。 发光层可以是例如在N 1 Ga 1-x N，Al x Ga 1-x N 2 > N，或在<！ - SIPO - >中。

    Reverse polarization light emitting region for a semiconductor light emitting device
    5.
    发明授权
    Reverse polarization light emitting region for a semiconductor light emitting device 有权
    用于半导体发光器件的反向偏振发光区域

    公开(公告)号：US07221000B2

    公开(公告)日：2007-05-22

    申请号：US11226185

    申请日：2005-09-13

    申请人： Yu-Chen Shen ,  Michael R. Krames ,  Nathan F. Gardner

    发明人： Yu-Chen Shen ,  Michael R. Krames ,  Nathan F. Gardner

    IPC分类号： H01L29/22

    CPC分类号： H01L33/32 ,  H01L33/16

    摘要： A semiconductor light emitting device includes a light emitting layer disposed between an n-type region and a p-type region. The light emitting layer may be a wurtzite III-nitride layer with a thickness of at least 50 angstroms. The light emitting layer may have a polarization reversed from a conventional wurtzite III-nitride layer, such that across an interface between the light emitting layer and the p-type region, the wurtzite c-axis points toward the light emitting layer. Such an orientation of the c-axis may create a negative sheet charge at an interface within or at the edge of the p-type region, providing a barrier to charge carriers in the light emitting layer.

    摘要翻译： 半导体发光器件包括设置在n型区域和p型区域之间的发光层。 发光层可以是厚度至少为50埃的纤锌矿III族氮化物层。 发光层可以具有与常规的纤锌矿III族氮化物层相反的偏振，使得在发光层和p型区域之间的界面上，纤锌矿c轴指向发光层​​。 c轴的这种取向可以在p型区域的边缘内或边缘处的界面处产生负片材电荷，为发光层中的载流子提供阻挡。

    Heterostructures for III-nitride light emitting devices
    7.
    发明授权
    Heterostructures for III-nitride light emitting devices 有权
    III族氮化物发光器件的异质结构

    公开(公告)号：US06995389B2

    公开(公告)日：2006-02-07

    申请号：US10465775

    申请日：2003-06-18

    申请人： James C. Kim ,  Nathan F. Gardner ,  Michael R. Krames ,  Yu-Chen Shen ,  Troy A. Trottier ,  Jonathan J. Wierer, Jr.

    发明人： James C. Kim ,  Nathan F. Gardner ,  Michael R. Krames ,  Yu-Chen Shen ,  Troy A. Trottier ,  Jonathan J. Wierer, Jr.

    IPC分类号： H01L29/06 ,  H01L31/0328 ,  H01L31/0336 ,  H01L33/00

    CPC分类号： B82Y20/00 ,  H01S5/3425 ,  H01S5/343 ,  H01S5/34333 ,  H01S5/34346

    摘要： Heterostructure designs are disclosed that may increase the number of charge carriers available in the quantum well layers of the active region of III-nitride light emitting devices such as light emitting diodes. In a first embodiment, a reservoir layer is included with a barrier layer and quantum well layer in the active region of a light emitting device. In some embodiments, the reservoir layer is thicker than the barrier layer and quantum well layer, and has a greater indium composition than the barrier layer and a smaller indium composition than the quantum well layer. In some embodiments, the reservoir layer is graded. In a second embodiment, the active region of a light emitting device is a superlattice of alternating quantum well layers and barrier layers. In some embodiments, the barrier layers are thin such that charge carriers can tunnel between quantum well layers through a barrier layer.

    摘要翻译： 公开了异质结构设计，其可以增加III族氮化物发光器件（例如发光二极管）的有源区的量子阱层中可用的电荷载体的数量。 在第一实施例中，存储层包括在发光器件的有源区中的势垒层和量子阱层。 在一些实施例中，储存层比阻挡层和量子阱层厚，并且具有比阻挡层更大的铟组成和比量子阱层更小的铟组成。 在一些实施例中，储层被分级。 在第二实施例中，发光器件的有源区是交替的量子阱层和阻挡层的超晶格。 在一些实施例中，阻挡层是薄的，使得电荷载流子可以通过势垒层在量子阱层之间隧穿。

    SPUTTER TOOL
    8.
    发明申请
    SPUTTER TOOL 审中-公开
    飞溅工具

    公开(公告)号：US20160177439A1

    公开(公告)日：2016-06-23

    申请号：US14578332

    申请日：2014-12-19

    申请人： Yu-Chen Shen ,  Taiqing Qiu ,  Robe Woehl ,  Kieran Mark Tracy ,  Mukul Agrawal

    发明人： Yu-Chen Shen ,  Taiqing Qiu ,  Robe Woehl ,  Kieran Mark Tracy ,  Mukul Agrawal

    IPC分类号： C23C14/50 ,  C23C14/34

    CPC分类号： C23C14/50 ,  C23C14/165 ,  C23C14/34 ,  C23C14/3464 ,  H01J37/32715

    摘要： Sputter tools are described. In one embodiment, an apparatus to support a wafer includes a pallet having a depression to receive the wafer. The pallet includes an opening below the depression, and an edge in the depression is to support the wafer over the opening. A cover at least partially covers the opening. In one example, the cover may be a plate with one or more holes, and a pipe may be located below each of the holes in the cover. In one embodiment, a wafer-processing system includes a processing chamber and a pallet with a depression to receive a wafer. The pallet has an opening below the depression, and an edge in the depression supports the wafer over the opening. In one such embodiment, a cover at least partially covers the opening. According to one embodiment, an energy-absorbing material is disposed below the opening in the pallet.

    摘要翻译： 描述了溅射工具。 在一个实施例中，用于支撑晶片的装置包括具有用于接收晶片的凹陷的托盘。 托盘包括在凹陷下方的开口，并且凹陷中的边缘将晶片支撑在开口上。 盖子至少部分地覆盖开口。 在一个示例中，盖可以是具有一个或多个孔的板，并且管可以位于盖中的每个孔下方。 在一个实施例中，晶片处理系统包括处理室和具有凹陷的托盘以接收晶片。 托盘在凹陷下方具有开口，并且凹陷中的边缘将晶片支撑在开口上方。 在一个这样的实施例中，盖至少部分地覆盖开口。 根据一个实施例，能量吸收材料设置在托盘中的开口下方。

    SIGNAL TRANSITION DETECTION CIRCUIT AND METHOD OF THE SAME
    10.
    发明申请
    SIGNAL TRANSITION DETECTION CIRCUIT AND METHOD OF THE SAME 有权
    信号转换检测电路及其方法

    公开(公告)号：US20130223493A1

    公开(公告)日：2013-08-29

    申请号：US13454352

    申请日：2012-04-24

    申请人： Yu-Chen Shen ,  Kuei-Chang Yang

    发明人： Yu-Chen Shen ,  Kuei-Chang Yang

    IPC分类号： H04B17/00

    CPC分类号： H04L1/24

    摘要： A signal transition detection circuit is provided. The signal transition detection circuit comprises a counter module, a DAC, a comparator and a digital sampling module. The counter module generates a digital step signal. The DAC converts the digital step signal into an analog input signal and transmits it to an under-test circuit such that the under-test circuit generates an output signal transiting from a first stable level to a second stable level, wherein a transition section is located between the first and the second stable level. The comparator receives and compares the output signal with a default value to generate a normalized output signal. The digital sampling module samples the normalized output signal to retrieve impulses such that when the number of the impulses is accumulated to be larger than a reference value, a corresponding step of the digital step signal is determined to be a transition point.

    摘要翻译： 提供了一种信号转换检测电路。 信号转换检测电路包括计数器模块，DAC，比较器和数字采样模块。 计数器模块产生数字步进信号。 DAC将数字步进信号转换为模拟输入信号并将其发送到未被测试的电路，使得欠测试电路产生从第一稳定电平转移到第二稳定电平的输出信号，其中过渡部分位于 在第一和第二稳定水平之间。 比较器接收并比较输出信号与默认值，以产生归一化的输出信号。 数字采样模块对归一化的输出信号进行采样以取回脉冲，使得当脉冲数被累积到大于参考值时，数字步进信号的相应步骤被确定为转变点。