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公开(公告)号:US20110121366A1
公开(公告)日:2011-05-26
申请号:US13016313
申请日:2011-01-28
申请人: Zvi Or-Bach , Brian Cronquist , Israel Beinglass , J.L. de Jong , Deepak C. Sekar , Paul Lim
发明人: Zvi Or-Bach , Brian Cronquist , Israel Beinglass , J.L. de Jong , Deepak C. Sekar , Paul Lim
IPC分类号: H01L27/118
CPC分类号: H01L21/8221 , H01L21/6835 , H01L21/76254 , H01L21/823828 , H01L21/84 , H01L23/3677 , H01L23/481 , H01L23/5252 , H01L24/05 , H01L24/13 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/83 , H01L25/0655 , H01L25/0657 , H01L25/50 , H01L27/0207 , H01L27/0688 , H01L27/092 , H01L27/10 , H01L27/105 , H01L27/10802 , H01L27/10873 , H01L27/10876 , H01L27/10894 , H01L27/10897 , H01L27/11 , H01L27/1108 , H01L27/1116 , H01L27/112 , H01L27/11206 , H01L27/11526 , H01L27/11529 , H01L27/11551 , H01L27/11573 , H01L27/11578 , H01L27/11807 , H01L27/11898 , H01L27/1203 , H01L27/1214 , H01L27/1266 , H01L29/4236 , H01L29/66272 , H01L29/66621 , H01L29/66825 , H01L29/66833 , H01L29/66901 , H01L29/78 , H01L29/7841 , H01L29/7881 , H01L29/792 , H01L2221/68368 , H01L2223/5442 , H01L2223/54426 , H01L2224/0401 , H01L2224/16145 , H01L2224/16235 , H01L2224/32145 , H01L2224/32225 , H01L2224/45124 , H01L2224/45147 , H01L2224/48091 , H01L2224/48227 , H01L2224/73204 , H01L2224/73253 , H01L2224/73265 , H01L2224/83894 , H01L2225/06513 , H01L2225/06541 , H01L2924/00011 , H01L2924/00014 , H01L2924/01002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01018 , H01L2924/01019 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/0105 , H01L2924/01051 , H01L2924/01066 , H01L2924/01068 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01076 , H01L2924/01077 , H01L2924/01078 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/014 , H01L2924/10253 , H01L2924/10329 , H01L2924/12032 , H01L2924/12036 , H01L2924/12042 , H01L2924/1301 , H01L2924/1305 , H01L2924/1306 , H01L2924/13062 , H01L2924/13091 , H01L2924/14 , H01L2924/15311 , H01L2924/15788 , H01L2924/1579 , H01L2924/16152 , H01L2924/181 , H01L2924/19041 , H01L2924/30105 , H01L2924/3011 , H01L2924/3025 , H01L2924/00015 , H01L2924/01031 , H01L2924/3512 , H01L2924/00 , H01L2224/80001 , H01L2224/05599 , H01L2924/00012
摘要: A semiconductor device includes a first single crystal silicon layer including first transistors, a first alignment mark, and at least one metal layer overlying the first single crystal silicon layer for interconnecting the first transistors; a second layer overlying the at least one metal layer, wherein the second layer includes a plurality of second transistors; and a connection path connecting the first transistors and the second transistors and including at least a first strip, a second strip, and a through via connecting the first strip and the second strip, wherein the second strip is substantially orthogonal to the first strip and wherein the through via is substantially away from both ends of the first strip and both ends of the second strip.
摘要翻译: 半导体器件包括第一单晶硅层,其包括第一晶体管,第一对准标记和覆盖在第一单晶硅层上的至少一个金属层,用于互连第一晶体管; 覆盖所述至少一个金属层的第二层,其中所述第二层包括多个第二晶体管; 以及连接路径,其连接第一晶体管和第二晶体管,并且至少包括连接第一条带和第二条带的第一条带,第二条带和通孔,其中第二条带基本上与第一条带正交, 通孔基本上远离第一条带的两端和第二条带的两端。
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公开(公告)号:US20110084314A1
公开(公告)日:2011-04-14
申请号:US12900379
申请日:2010-10-07
申请人: Zvi Or-Bach , Brian Cronquist , Israel Beinglass , J.L. de Jong , Deepak C. Sekar , Zeev Wurman
发明人: Zvi Or-Bach , Brian Cronquist , Israel Beinglass , J.L. de Jong , Deepak C. Sekar , Zeev Wurman
IPC分类号: H01L23/52
CPC分类号: H01L27/0688 , G03F9/7076 , G03F9/7084 , H01L21/268 , H01L21/76254 , H01L21/76898 , H01L21/8221 , H01L21/823871 , H01L21/84 , H01L23/367 , H01L23/481 , H01L23/5226 , H01L23/528 , H01L23/53214 , H01L23/53228 , H01L23/544 , H01L24/73 , H01L27/0207 , H01L27/088 , H01L27/092 , H01L27/105 , H01L27/10876 , H01L27/10894 , H01L27/10897 , H01L27/11 , H01L27/1108 , H01L27/112 , H01L27/11551 , H01L27/11578 , H01L27/11807 , H01L27/11898 , H01L27/1203 , H01L29/42392 , H01L29/458 , H01L29/66272 , H01L29/66545 , H01L29/66621 , H01L29/66848 , H01L29/66901 , H01L29/732 , H01L29/78639 , H01L29/78642 , H01L29/78645 , H01L29/808 , H01L29/812 , H01L2223/5442 , H01L2223/54426 , H01L2223/54453 , H01L2224/16145 , H01L2224/16225 , H01L2224/32145 , H01L2224/32225 , H01L2224/45124 , H01L2224/45147 , H01L2224/48091 , H01L2224/48227 , H01L2224/73204 , H01L2224/73253 , H01L2224/73265 , H01L2924/00011 , H01L2924/10253 , H01L2924/12032 , H01L2924/1301 , H01L2924/1305 , H01L2924/13062 , H01L2924/13091 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2924/3011 , H01L2924/3025 , H01L2924/00014 , H01L2924/00 , H01L2224/80001 , H01L2924/00012 , H01L2924/01015
摘要: A system includes a semiconductor device. The semiconductor device includes a first single crystal silicon layer comprising first transistors, first alignment marks, and at least one metal layer overlying the first single crystal silicon layer, wherein the at least one metal layer comprises copper or aluminum more than other materials; and a second single crystal silicon layer overlying the at least one metal layer. The second single crystal silicon layer comprises a plurality of second transistors arranged in substantially parallel bands. Each of a plurality of the bands comprises a portion of the second transistors along an axis in a repeating pattern.
摘要翻译: 系统包括半导体器件。 半导体器件包括第一单晶硅层,其包括第一晶体管,第一对准标记和覆盖在第一单晶硅层上的至少一个金属层,其中所述至少一个金属层比其它材料包括铜或铝; 以及覆盖所述至少一个金属层的第二单晶硅层。 第二单晶硅层包括以基本平行的带布置的多个第二晶体管。 多个频带中的每一个包括沿着重复图案的轴的第二晶体管的一部分。
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公开(公告)号:US20120248595A1
公开(公告)日:2012-10-04
申请号:US13492395
申请日:2012-06-08
申请人: Zvi Or-Bach , Deepak C. Sekar , Brian Cronquist , Israel Beinglass , Ze'ev Wurman , Paul Lim
发明人: Zvi Or-Bach , Deepak C. Sekar , Brian Cronquist , Israel Beinglass , Ze'ev Wurman , Paul Lim
IPC分类号: H01L23/36
CPC分类号: H01L21/6835 , G11C8/16 , H01L21/743 , H01L21/76254 , H01L21/76898 , H01L21/8221 , H01L21/823828 , H01L21/84 , H01L23/3677 , H01L23/481 , H01L23/5252 , H01L24/13 , H01L24/16 , H01L24/45 , H01L24/48 , H01L25/0655 , H01L25/0657 , H01L25/50 , H01L27/0207 , H01L27/0688 , H01L27/092 , H01L27/10 , H01L27/105 , H01L27/10802 , H01L27/10873 , H01L27/10876 , H01L27/10894 , H01L27/10897 , H01L27/11 , H01L27/1108 , H01L27/112 , H01L27/11206 , H01L27/11526 , H01L27/11529 , H01L27/11551 , H01L27/11573 , H01L27/11578 , H01L27/11807 , H01L27/11898 , H01L27/1203 , H01L27/1214 , H01L27/1266 , H01L29/4236 , H01L29/66272 , H01L29/66621 , H01L29/66825 , H01L29/66833 , H01L29/66901 , H01L29/78 , H01L29/7841 , H01L29/7843 , H01L29/7881 , H01L29/792 , H01L2221/68368 , H01L2223/5442 , H01L2223/54426 , H01L2224/131 , H01L2224/16145 , H01L2224/16146 , H01L2224/16227 , H01L2224/16235 , H01L2224/32145 , H01L2224/32225 , H01L2224/45124 , H01L2224/45147 , H01L2224/48091 , H01L2224/48227 , H01L2224/73204 , H01L2224/73253 , H01L2224/73265 , H01L2224/81005 , H01L2224/83894 , H01L2225/06513 , H01L2225/06541 , H01L2924/00011 , H01L2924/01002 , H01L2924/01004 , H01L2924/01013 , H01L2924/01018 , H01L2924/01019 , H01L2924/01029 , H01L2924/01046 , H01L2924/01066 , H01L2924/01068 , H01L2924/01077 , H01L2924/01078 , H01L2924/01322 , H01L2924/10253 , H01L2924/10329 , H01L2924/12032 , H01L2924/12033 , H01L2924/12036 , H01L2924/12042 , H01L2924/1301 , H01L2924/1305 , H01L2924/13062 , H01L2924/13091 , H01L2924/14 , H01L2924/1461 , H01L2924/15311 , H01L2924/1579 , H01L2924/16152 , H01L2924/181 , H01L2924/19041 , H01L2924/30105 , H01L2924/3011 , H01L2924/3025 , H01L2924/00014 , H01L2924/014 , H01L2924/00015 , H01L2924/00 , H01L2224/80001 , H01L2224/16225 , H01L2924/00012
摘要: A method of manufacturing a semiconductor device, the method including, providing a first monocrystalline layer including semiconductor regions, overlaying the first monocrystalline layer with an isolation layer, transferring a second monocrystalline layer comprising semiconductor regions to overlay the isolation layer, wherein the first monocrystalline layer and the second monocrystalline layer are formed from substantially different crystal materials; and subsequently etching the second monocrystalline layer as part of forming at least one transistor in the second monocrystalline layer.
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公开(公告)号:US20110092030A1
公开(公告)日:2011-04-21
申请号:US12970602
申请日:2010-12-16
申请人: Zvi Or-Bach , Brian Cronquist , Israel Beinglass , J. L. de Jong , Deepak C. Sekar , Paul Lim
发明人: Zvi Or-Bach , Brian Cronquist , Israel Beinglass , J. L. de Jong , Deepak C. Sekar , Paul Lim
IPC分类号: H01L21/822
CPC分类号: H01L27/1266 , G06F17/5072 , H01L21/6835 , H01L21/76254 , H01L21/8221 , H01L21/823828 , H01L21/84 , H01L23/3677 , H01L23/481 , H01L23/5252 , H01L23/544 , H01L24/05 , H01L24/13 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/83 , H01L25/0657 , H01L25/50 , H01L27/0207 , H01L27/0688 , H01L27/092 , H01L27/10 , H01L27/105 , H01L27/10802 , H01L27/10873 , H01L27/10876 , H01L27/10894 , H01L27/10897 , H01L27/11 , H01L27/1108 , H01L27/112 , H01L27/11206 , H01L27/11526 , H01L27/11529 , H01L27/11551 , H01L27/11573 , H01L27/11578 , H01L27/11807 , H01L27/11898 , H01L27/1203 , H01L27/1214 , H01L29/4236 , H01L29/66272 , H01L29/66621 , H01L29/66825 , H01L29/66833 , H01L29/66901 , H01L29/78 , H01L29/7841 , H01L29/7848 , H01L29/7881 , H01L29/792 , H01L2221/68368 , H01L2223/5442 , H01L2223/54426 , H01L2224/0401 , H01L2224/16145 , H01L2224/16225 , H01L2224/16235 , H01L2224/32145 , H01L2224/32225 , H01L2224/45124 , H01L2224/45147 , H01L2224/48091 , H01L2224/48227 , H01L2224/73204 , H01L2224/73253 , H01L2224/73265 , H01L2224/83894 , H01L2225/06513 , H01L2225/06541 , H01L2924/00011 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01018 , H01L2924/01019 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/0105 , H01L2924/01051 , H01L2924/01066 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01076 , H01L2924/01077 , H01L2924/01078 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/10253 , H01L2924/10329 , H01L2924/12032 , H01L2924/12036 , H01L2924/1301 , H01L2924/1305 , H01L2924/1306 , H01L2924/13062 , H01L2924/13091 , H01L2924/14 , H01L2924/15311 , H01L2924/15788 , H01L2924/181 , H01L2924/19041 , H01L2924/30105 , H01L2924/3011 , H01L2924/3025 , H01L2924/00014 , H01L2924/00015 , H01L2924/00 , H01L2924/3512 , H01L2224/80001 , H01L2924/00012
摘要: A semiconductor device includes a first mono-crystallized layer including first transistors, and a first metal layer forming at least a portion of connections between the first transistors; and a second layer including second transistors, the second transistors including mono-crystalline material, the second layer overlying the first metal layer, wherein the first metal layer includes aluminum or copper, and wherein the second layer is less than one micron in thickness and includes logic cells.
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公开(公告)号:US09136153B2
公开(公告)日:2015-09-15
申请号:US13492395
申请日:2012-06-08
申请人: Zvi Or-Bach , Deepak C. Sekar , Brian Cronquist , Israel Beinglass , Ze'ev Wurman , Paul Lim
发明人: Zvi Or-Bach , Deepak C. Sekar , Brian Cronquist , Israel Beinglass , Ze'ev Wurman , Paul Lim
IPC分类号: H01L25/00 , H01L25/065 , H01L21/683 , H01L21/74 , H01L21/762 , H01L21/768 , H01L21/822 , H01L21/8238 , H01L21/84 , H01L23/48 , H01L23/525 , H01L27/02 , H01L27/06 , H01L27/092 , H01L27/10 , H01L27/105 , H01L27/108 , H01L27/11 , H01L27/112 , H01L27/115 , H01L27/118 , H01L27/12 , H01L29/423 , H01L29/66 , H01L29/78 , H01L29/788 , H01L29/792 , H01L23/367 , H01L23/00
CPC分类号: H01L21/6835 , G11C8/16 , H01L21/743 , H01L21/76254 , H01L21/76898 , H01L21/8221 , H01L21/823828 , H01L21/84 , H01L23/3677 , H01L23/481 , H01L23/5252 , H01L24/13 , H01L24/16 , H01L24/45 , H01L24/48 , H01L25/0655 , H01L25/0657 , H01L25/50 , H01L27/0207 , H01L27/0688 , H01L27/092 , H01L27/10 , H01L27/105 , H01L27/10802 , H01L27/10873 , H01L27/10876 , H01L27/10894 , H01L27/10897 , H01L27/11 , H01L27/1108 , H01L27/112 , H01L27/11206 , H01L27/11526 , H01L27/11529 , H01L27/11551 , H01L27/11573 , H01L27/11578 , H01L27/11807 , H01L27/11898 , H01L27/1203 , H01L27/1214 , H01L27/1266 , H01L29/4236 , H01L29/66272 , H01L29/66621 , H01L29/66825 , H01L29/66833 , H01L29/66901 , H01L29/78 , H01L29/7841 , H01L29/7843 , H01L29/7881 , H01L29/792 , H01L2221/68368 , H01L2223/5442 , H01L2223/54426 , H01L2224/131 , H01L2224/16145 , H01L2224/16146 , H01L2224/16227 , H01L2224/16235 , H01L2224/32145 , H01L2224/32225 , H01L2224/45124 , H01L2224/45147 , H01L2224/48091 , H01L2224/48227 , H01L2224/73204 , H01L2224/73253 , H01L2224/73265 , H01L2224/81005 , H01L2224/83894 , H01L2225/06513 , H01L2225/06541 , H01L2924/00011 , H01L2924/01002 , H01L2924/01004 , H01L2924/01013 , H01L2924/01018 , H01L2924/01019 , H01L2924/01029 , H01L2924/01046 , H01L2924/01066 , H01L2924/01068 , H01L2924/01077 , H01L2924/01078 , H01L2924/01322 , H01L2924/10253 , H01L2924/10329 , H01L2924/12032 , H01L2924/12033 , H01L2924/12036 , H01L2924/12042 , H01L2924/1301 , H01L2924/1305 , H01L2924/13062 , H01L2924/13091 , H01L2924/14 , H01L2924/1461 , H01L2924/15311 , H01L2924/1579 , H01L2924/16152 , H01L2924/181 , H01L2924/19041 , H01L2924/30105 , H01L2924/3011 , H01L2924/3025 , H01L2924/00014 , H01L2924/014 , H01L2924/00015 , H01L2924/00 , H01L2224/80001 , H01L2224/16225 , H01L2924/00012
摘要: A 3D semiconductor device, including: a first layer including first transistors; a first interconnection layer interconnecting the first transistors and includes aluminum or copper; a second layer including second transistors; where the second transistors are aligned to the first transistors with a less than 40 nm alignment error, and where the second layer is overlying the first interconnection layer, and where at least one of the second transistors has a back-bias structure designed to modify the performance of at least one of the second transistors.
摘要翻译: 一种3D半导体器件,包括:包括第一晶体管的第一层; 互连第一晶体管并且包括铝或铜的第一互连层; 包括第二晶体管的第二层; 其中所述第二晶体管与所述第一晶体管对准,具有小于40nm的对准误差,并且其中所述第二层覆盖所述第一互连层,并且其中所述第二晶体管中的至少一个具有背偏置结构, 至少一个第二晶体管的性能。
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公开(公告)号:US20120129301A1
公开(公告)日:2012-05-24
申请号:US13273712
申请日:2011-10-14
申请人: Zvi Or-Bach , Deepak C. Sekar , Brian Cronquist , Israel Beinglass , Ze'ev Wurman , Paul Lim
发明人: Zvi Or-Bach , Deepak C. Sekar , Brian Cronquist , Israel Beinglass , Ze'ev Wurman , Paul Lim
IPC分类号: H01L21/822
CPC分类号: H01L21/6835 , G11C8/16 , H01L21/743 , H01L21/76254 , H01L21/76898 , H01L21/8221 , H01L21/823828 , H01L21/84 , H01L23/3677 , H01L23/481 , H01L23/5252 , H01L24/13 , H01L24/16 , H01L24/45 , H01L24/48 , H01L25/0655 , H01L25/0657 , H01L25/50 , H01L27/0207 , H01L27/0688 , H01L27/092 , H01L27/10 , H01L27/105 , H01L27/10802 , H01L27/10873 , H01L27/10876 , H01L27/10894 , H01L27/10897 , H01L27/11 , H01L27/1108 , H01L27/112 , H01L27/11206 , H01L27/11526 , H01L27/11529 , H01L27/11551 , H01L27/11573 , H01L27/11578 , H01L27/11807 , H01L27/11898 , H01L27/1203 , H01L27/1214 , H01L27/1266 , H01L29/4236 , H01L29/66272 , H01L29/66621 , H01L29/66825 , H01L29/66833 , H01L29/66901 , H01L29/78 , H01L29/7841 , H01L29/7843 , H01L29/7881 , H01L29/792 , H01L2221/68368 , H01L2223/5442 , H01L2223/54426 , H01L2224/131 , H01L2224/16145 , H01L2224/16146 , H01L2224/16227 , H01L2224/16235 , H01L2224/32145 , H01L2224/32225 , H01L2224/45124 , H01L2224/45147 , H01L2224/48091 , H01L2224/48227 , H01L2224/73204 , H01L2224/73253 , H01L2224/73265 , H01L2224/81005 , H01L2224/83894 , H01L2225/06513 , H01L2225/06541 , H01L2924/00011 , H01L2924/01002 , H01L2924/01004 , H01L2924/01013 , H01L2924/01018 , H01L2924/01019 , H01L2924/01029 , H01L2924/01046 , H01L2924/01066 , H01L2924/01068 , H01L2924/01077 , H01L2924/01078 , H01L2924/01322 , H01L2924/10253 , H01L2924/10329 , H01L2924/12032 , H01L2924/12033 , H01L2924/12036 , H01L2924/12042 , H01L2924/1301 , H01L2924/1305 , H01L2924/13062 , H01L2924/13091 , H01L2924/14 , H01L2924/1461 , H01L2924/15311 , H01L2924/1579 , H01L2924/16152 , H01L2924/181 , H01L2924/19041 , H01L2924/30105 , H01L2924/3011 , H01L2924/3025 , H01L2924/00014 , H01L2924/014 , H01L2924/00015 , H01L2924/00 , H01L2224/80001 , H01L2224/16225 , H01L2924/00012
摘要: A method of manufacturing a semiconductor device, the method including, providing a first monocrystalline layer including semiconductor regions, overlaying the first monocrystalline layer with an isolation layer, transferring a second monocrystalline layer comprising semiconductor regions to overlay the isolation layer, wherein the first monocrystalline layer and the second monocrystalline layer are formed from substantially different crystal materials; and subsequently etching the second monocrystalline layer as part of forming at least one transistor in the second monocrystalline layer.
摘要翻译: 一种制造半导体器件的方法,所述方法包括:提供包括半导体区域的第一单晶层,将第一单晶层与隔离层重叠,转移包含半导体区域的第二单晶层覆盖隔离层,其中第一单晶层 并且第二单晶层由基本上不同的晶体材料形成; 随后蚀刻第二单晶层作为在第二单晶层中形成至少一个晶体管的一部分。
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公开(公告)号:US09711407B2
公开(公告)日:2017-07-18
申请号:US12970602
申请日:2010-12-16
申请人: Zvi Or-Bach , Brian Cronquist , Israel Beinglass , J. L. de Jong , Deepak C. Sekar , Paul Lim
发明人: Zvi Or-Bach , Brian Cronquist , Israel Beinglass , J. L. de Jong , Deepak C. Sekar , Paul Lim
IPC分类号: H01L21/822 , H01L21/84 , H01L21/683 , H01L23/00 , H01L23/525 , H01L23/544 , H01L25/065 , H01L27/02 , H01L27/092 , H01L27/10 , H01L27/105 , H01L27/108 , H01L27/115 , H01L27/118 , H01L29/66 , H01L29/423 , H01L29/78 , G06F17/50 , H01L21/762 , H01L21/8238 , H01L25/00 , H01L27/06 , H01L27/11 , H01L27/112 , H01L27/11526 , H01L27/11529 , H01L27/11551 , H01L27/11573 , H01L27/11578 , H01L27/12 , H01L29/788 , H01L29/792 , H01L23/367 , H01L23/48
CPC分类号: H01L27/1266 , G06F17/5072 , H01L21/6835 , H01L21/76254 , H01L21/8221 , H01L21/823828 , H01L21/84 , H01L23/3677 , H01L23/481 , H01L23/5252 , H01L23/544 , H01L24/05 , H01L24/13 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/83 , H01L25/0657 , H01L25/50 , H01L27/0207 , H01L27/0688 , H01L27/092 , H01L27/10 , H01L27/105 , H01L27/10802 , H01L27/10873 , H01L27/10876 , H01L27/10894 , H01L27/10897 , H01L27/11 , H01L27/1108 , H01L27/112 , H01L27/11206 , H01L27/11526 , H01L27/11529 , H01L27/11551 , H01L27/11573 , H01L27/11578 , H01L27/11807 , H01L27/11898 , H01L27/1203 , H01L27/1214 , H01L29/4236 , H01L29/66272 , H01L29/66621 , H01L29/66825 , H01L29/66833 , H01L29/66901 , H01L29/78 , H01L29/7841 , H01L29/7848 , H01L29/7881 , H01L29/792 , H01L2221/68368 , H01L2223/5442 , H01L2223/54426 , H01L2224/0401 , H01L2224/16145 , H01L2224/16225 , H01L2224/16235 , H01L2224/32145 , H01L2224/32225 , H01L2224/45124 , H01L2224/45147 , H01L2224/48091 , H01L2224/48227 , H01L2224/73204 , H01L2224/73253 , H01L2224/73265 , H01L2224/83894 , H01L2225/06513 , H01L2225/06541 , H01L2924/00011 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01018 , H01L2924/01019 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/0105 , H01L2924/01051 , H01L2924/01066 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01076 , H01L2924/01077 , H01L2924/01078 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/10253 , H01L2924/10329 , H01L2924/12032 , H01L2924/12036 , H01L2924/1301 , H01L2924/1305 , H01L2924/1306 , H01L2924/13062 , H01L2924/13091 , H01L2924/14 , H01L2924/15311 , H01L2924/15788 , H01L2924/181 , H01L2924/19041 , H01L2924/30105 , H01L2924/3011 , H01L2924/3025 , H01L2924/00014 , H01L2924/00015 , H01L2924/00 , H01L2924/3512 , H01L2224/80001 , H01L2924/00012
摘要: A semiconductor device includes a first mono-crystallized layer including first transistors, and a first metal layer forming at least a portion of connections between the first transistors; and a second layer including second transistors, the second transistors including mono-crystalline material, the second layer overlying the first metal layer, wherein the first metal layer includes aluminum or copper, and wherein the second layer is less than one micron in thickness and includes logic cells.
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公开(公告)号:US08362482B2
公开(公告)日:2013-01-29
申请号:US13016313
申请日:2011-01-28
申请人: Zvi Or-Bach , Brian Cronquist , Israel Beinglass , Jan Lodewijk de Jong , Deepak C. Sekar , Paul Lim
发明人: Zvi Or-Bach , Brian Cronquist , Israel Beinglass , Jan Lodewijk de Jong , Deepak C. Sekar , Paul Lim
CPC分类号: H01L21/8221 , H01L21/6835 , H01L21/76254 , H01L21/823828 , H01L21/84 , H01L23/3677 , H01L23/481 , H01L23/5252 , H01L24/05 , H01L24/13 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/83 , H01L25/0655 , H01L25/0657 , H01L25/50 , H01L27/0207 , H01L27/0688 , H01L27/092 , H01L27/10 , H01L27/105 , H01L27/10802 , H01L27/10873 , H01L27/10876 , H01L27/10894 , H01L27/10897 , H01L27/11 , H01L27/1108 , H01L27/1116 , H01L27/112 , H01L27/11206 , H01L27/11526 , H01L27/11529 , H01L27/11551 , H01L27/11573 , H01L27/11578 , H01L27/11807 , H01L27/11898 , H01L27/1203 , H01L27/1214 , H01L27/1266 , H01L29/4236 , H01L29/66272 , H01L29/66621 , H01L29/66825 , H01L29/66833 , H01L29/66901 , H01L29/78 , H01L29/7841 , H01L29/7881 , H01L29/792 , H01L2221/68368 , H01L2223/5442 , H01L2223/54426 , H01L2224/0401 , H01L2224/16145 , H01L2224/16235 , H01L2224/32145 , H01L2224/32225 , H01L2224/45124 , H01L2224/45147 , H01L2224/48091 , H01L2224/48227 , H01L2224/73204 , H01L2224/73253 , H01L2224/73265 , H01L2224/83894 , H01L2225/06513 , H01L2225/06541 , H01L2924/00011 , H01L2924/00014 , H01L2924/01002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01018 , H01L2924/01019 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/0105 , H01L2924/01051 , H01L2924/01066 , H01L2924/01068 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01076 , H01L2924/01077 , H01L2924/01078 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/014 , H01L2924/10253 , H01L2924/10329 , H01L2924/12032 , H01L2924/12036 , H01L2924/12042 , H01L2924/1301 , H01L2924/1305 , H01L2924/1306 , H01L2924/13062 , H01L2924/13091 , H01L2924/14 , H01L2924/15311 , H01L2924/15788 , H01L2924/1579 , H01L2924/16152 , H01L2924/181 , H01L2924/19041 , H01L2924/30105 , H01L2924/3011 , H01L2924/3025 , H01L2924/00015 , H01L2924/01031 , H01L2924/3512 , H01L2924/00 , H01L2224/80001 , H01L2224/05599 , H01L2924/00012
摘要: A semiconductor device including a first layer including first transistors, wherein first logic circuits are constructed by the first transistors, and wherein the first logic circuits include at least one of Inverter, NAND gate, or NOR gate; and a second layer overlaying said first layer, the second layer including second transistors, wherein second logic circuits are constructed by the second transistors; wherein each logic circuit in the first logic circuits has inputs and at least one first output, the inputs are connected to the second logic circuits; wherein each logic circuit in the second logic circuits has a second output, and wherein the first transistors include first selectors adapted to selectively replace at least one of the at least one first outputs with at least one of the second outputs.
摘要翻译: 一种半导体器件,包括包括第一晶体管的第一层,其中第一逻辑电路由第一晶体管构成,并且其中第一逻辑电路包括反相器,非门或或非门中的至少一个; 以及覆盖所述第一层的第二层,所述第二层包括第二晶体管,其中第二逻辑电路由第二晶体管构成; 其中所述第一逻辑电路中的每个逻辑电路具有输入和至少一个第一输出,所述输入连接到所述第二逻辑电路; 其中所述第二逻辑电路中的每个逻辑电路具有第二输出,并且其中所述第一晶体管包括适于使用所述第二输出中的至少一个选择性地替换所述至少一个第一输出中的至少一个的第一选择器。
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公开(公告)号:US08273610B2
公开(公告)日:2012-09-25
申请号:US13273712
申请日:2011-10-14
申请人: Zvi Or-Bach , Deepak C. Sekar , Brian Cronquist , Israel Beinglass , Ze'ev Wurman , Paul Lim
发明人: Zvi Or-Bach , Deepak C. Sekar , Brian Cronquist , Israel Beinglass , Ze'ev Wurman , Paul Lim
IPC分类号: H01L21/335 , H01L21/8238 , H01L21/30
CPC分类号: H01L21/6835 , G11C8/16 , H01L21/743 , H01L21/76254 , H01L21/76898 , H01L21/8221 , H01L21/823828 , H01L21/84 , H01L23/3677 , H01L23/481 , H01L23/5252 , H01L24/13 , H01L24/16 , H01L24/45 , H01L24/48 , H01L25/0655 , H01L25/0657 , H01L25/50 , H01L27/0207 , H01L27/0688 , H01L27/092 , H01L27/10 , H01L27/105 , H01L27/10802 , H01L27/10873 , H01L27/10876 , H01L27/10894 , H01L27/10897 , H01L27/11 , H01L27/1108 , H01L27/112 , H01L27/11206 , H01L27/11526 , H01L27/11529 , H01L27/11551 , H01L27/11573 , H01L27/11578 , H01L27/11807 , H01L27/11898 , H01L27/1203 , H01L27/1214 , H01L27/1266 , H01L29/4236 , H01L29/66272 , H01L29/66621 , H01L29/66825 , H01L29/66833 , H01L29/66901 , H01L29/78 , H01L29/7841 , H01L29/7843 , H01L29/7881 , H01L29/792 , H01L2221/68368 , H01L2223/5442 , H01L2223/54426 , H01L2224/131 , H01L2224/16145 , H01L2224/16146 , H01L2224/16227 , H01L2224/16235 , H01L2224/32145 , H01L2224/32225 , H01L2224/45124 , H01L2224/45147 , H01L2224/48091 , H01L2224/48227 , H01L2224/73204 , H01L2224/73253 , H01L2224/73265 , H01L2224/81005 , H01L2224/83894 , H01L2225/06513 , H01L2225/06541 , H01L2924/00011 , H01L2924/01002 , H01L2924/01004 , H01L2924/01013 , H01L2924/01018 , H01L2924/01019 , H01L2924/01029 , H01L2924/01046 , H01L2924/01066 , H01L2924/01068 , H01L2924/01077 , H01L2924/01078 , H01L2924/01322 , H01L2924/10253 , H01L2924/10329 , H01L2924/12032 , H01L2924/12033 , H01L2924/12036 , H01L2924/12042 , H01L2924/1301 , H01L2924/1305 , H01L2924/13062 , H01L2924/13091 , H01L2924/14 , H01L2924/1461 , H01L2924/15311 , H01L2924/1579 , H01L2924/16152 , H01L2924/181 , H01L2924/19041 , H01L2924/30105 , H01L2924/3011 , H01L2924/3025 , H01L2924/00014 , H01L2924/014 , H01L2924/00015 , H01L2924/00 , H01L2224/80001 , H01L2224/16225 , H01L2924/00012
摘要: A method of manufacturing a semiconductor device, the method including, providing a first monocrystalline layer including semiconductor regions, overlaying the first monocrystalline layer with an isolation layer, transferring a second monocrystalline layer comprising semiconductor regions to overlay the isolation layer, wherein the first monocrystalline layer and the second monocrystalline layer are formed from substantially different crystal materials; and subsequently etching the second monocrystalline layer as part of forming at least one transistor in the second monocrystalline layer.
摘要翻译: 一种制造半导体器件的方法,所述方法包括:提供包括半导体区域的第一单晶层,将第一单晶层与隔离层重叠,转移包含半导体区域的第二单晶层覆盖隔离层,其中第一单晶层 并且第二单晶层由基本上不同的晶体材料形成; 随后蚀刻第二单晶层作为在第二单晶层中形成至少一个晶体管的一部分。
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公开(公告)号:US20120193719A1
公开(公告)日:2012-08-02
申请号:US12904119
申请日:2010-10-13
IPC分类号: H01L27/088
CPC分类号: H01L21/6835 , H01L21/823431 , H01L23/481 , H01L23/5283 , H01L23/544 , H01L27/0688 , H01L27/088 , H01L27/092 , H01L27/10802 , H01L27/10894 , H01L27/1108 , H01L27/1116 , H01L27/11529 , H01L27/11551 , H01L27/1157 , H01L27/11573 , H01L27/11578 , H01L27/2436 , H01L27/249 , H01L29/7841 , H01L29/785 , H01L29/7881 , H01L29/792 , H01L45/04 , H01L45/1226 , H01L45/146 , H01L2221/68327 , H01L2221/6834 , H01L2221/68381 , H01L2223/5442 , H01L2223/54426 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2924/10253 , H01L2924/13062 , H01L2924/13091 , H01L2924/14 , H01L2924/1461 , H01L2924/15311 , H01L2924/00
摘要: A device comprising semiconductor memories, the device comprising: a first layer and a second layer of layer-transferred mono-crystallized silicon, wherein the first layer comprises a first plurality of horizontally-oriented transistors; wherein the second layer comprises a second plurality of horizontally-oriented transistors; and wherein the second plurality of horizontally-oriented transistors overlays the first plurality of horizontally-oriented transistors.
摘要翻译: 一种包括半导体存储器的器件,所述器件包括:第一层和第二层转移单结晶硅,其中所述第一层包括第一多个水平取向晶体管; 其中所述第二层包括第二多个水平取向晶体管; 并且其中所述第二多个水平取向晶体管覆盖所述第一多个水平取向晶体管。
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