摘要:
Reliability of a semiconductor device is improved.A wire bonding step includes a step of exposing a wire and a pad electrode to a reducing gas atmosphere, forming a first hydroxyl layer on a surface of a ball portion, and forming a second hydroxyl layer on a surface of the pad electrode, a first bonding step of temporarily joining the ball portion to the pad electrode through the first hydroxyl layer and the second hydroxyl layer, and after the first bonding step, a step of actually joining the ball portion to the pad electrode by performing a heat treatment on a semiconductor chip and a base material.
摘要:
A manufacturing method for a wire bonding structure of the present invention includes a step of preparing a wire made of Cu and a step of joining the wire to a first joining target formed on an electronic device. Before the joining step, the wire has an outer circumferential surface and a withdrawn surface. The withdrawn surface is withdrawn toward a central axis of the wire from the outer circumferential surface. In the joining step, ultrasonic vibration is applied to the wire in a state in which the withdrawn surface is pressed against the first joining target.
摘要:
A wire bonding machine is provided. The wire bonding machine includes: (a) a wire bonding tool; (b) a wire guide for guiding a wire to a position beneath a bonding surface of the wire bonding tool, the wire guide being configured for movement between (i) an engagement position with respect to the wire bonding tool and (ii) a non-engagement position with respect to the wire bonding tool; and a cleaning station for cleaning at least a portion of a tip of the wire bonding tool when the wire guide is in the non-engagement position.
摘要:
Reliability of a semiconductor device is improved.A wire bonding step includes a step of exposing a wire and a pad electrode to a reducing gas atmosphere, forming a first hydroxyl layer on a surface of a ball portion, and forming a second hydroxyl layer on a surface of the pad electrode, a first bonding step of temporarily joining the ball portion to the pad electrode through the first hydroxyl layer and the second hydroxyl layer, and after the first bonding step, a step of actually joining the ball portion to the pad electrode by performing a heat treatment on a semiconductor chip and a base material.
摘要:
An ultrasonic wire bonding wedge with multiple bonding wire slots is provided. The wire bonding wedge includes a pillar fixing part for providing fixed connection to the bonding device. One end of the fixing part includes a wire bonding wedge nozzle, with feature that the tip of the nozzle including at least two bonding wire slots. The tip of nozzle of the wire bonding wedge includes at least two bonding wire slots, and is able to realize bonding operations between two or more bonding wires and the chips to improve bonding operation efficiency. When bonding operation is performed on a smaller bonding area, or two or more parallel bonding wires, the wire bonding wedge is able to perform a single bonding operation in a smaller bonding operation so as to reduce defective rate of the chips and ensure sufficient bonding strength of the bonding operation.