公开(公告)号：EP2884526A1

公开(公告)日：2015-06-17

申请号：EP13828355.1

申请日：2013-03-11

申请人： Panasonic Intellectual Property Management Co., Ltd.

发明人： UEDA, Mitsuhiko ,  SANAGAWA, Yoshiharu ,  AKETA, Takanori ,  HAYASHI, Shintaro

IPC分类号： H01L21/52 ,  B23K20/00 ,  H01L21/60

CPC分类号： H01L24/97 ,  B23K20/00 ,  H01L21/52 ,  H01L21/6836 ,  H01L24/05 ,  H01L24/27 ,  H01L24/29 ,  H01L24/30 ,  H01L24/32 ,  H01L24/75 ,  H01L24/83 ,  H01L2221/68327 ,  H01L2221/68381 ,  H01L2224/04026 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05664 ,  H01L2224/05669 ,  H01L2224/2745 ,  H01L2224/2746 ,  H01L2224/29011 ,  H01L2224/29012 ,  H01L2224/29013 ,  H01L2224/2908 ,  H01L2224/29082 ,  H01L2224/29111 ,  H01L2224/29144 ,  H01L2224/29147 ,  H01L2224/3003 ,  H01L2224/32225 ,  H01L2224/32227 ,  H01L2224/32501 ,  H01L2224/32505 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/75252 ,  H01L2224/75301 ,  H01L2224/75744 ,  H01L2224/75745 ,  H01L2224/75753 ,  H01L2224/75901 ,  H01L2224/7598 ,  H01L2224/8301 ,  H01L2224/83013 ,  H01L2224/83065 ,  H01L2224/83075 ,  H01L2224/8309 ,  H01L2224/83123 ,  H01L2224/83127 ,  H01L2224/83193 ,  H01L2224/83203 ,  H01L2224/83207 ,  H01L2224/83805 ,  H01L2224/83825 ,  H01L2224/8383 ,  H01L2224/83906 ,  H01L2224/83907 ,  H01L2224/92247 ,  H01L2224/97 ,  H01L2924/01322 ,  H01L2924/10161 ,  H01L2924/10162 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12043 ,  H01L2924/1461 ,  H01L2224/83 ,  H01L2924/0105 ,  H01L2924/00014 ,  H01L2924/01032 ,  H01L2924/01083 ,  H01L2924/01029 ,  H01L2924/00012 ,  H01L2924/00

摘要： A mounting method of mounting chips on a substrate includes a temporarily-bonding process of temporarily individually bonding the chips on the substrate, and a main-bonding process of firmly individually bonding, on the substrate, the chips temporarily bonded on the substrate. The temporarily-bonding process is to perform a first basic process, repeatedly depending on the number of the chips to be mounted on the substrate. The first basic process includes a first step and a second step. The first step is to align, on a first metal layer of the substrate, a second metal layer of each chip. The second step is to temporarily bond each chip by subjecting the first and second metal layers to solid phase diffusion bonding. The main-bonding process is to perform a second basic process, repeatedly depending on the number of the chips on the substrate. The second basic process includes a third step and a fourth step. The third step is to recognize a position of each chip temporarily mounted on the substrate. The fourth step is to firmly bond each chip by subjecting the first and second metal layers to liquid phase diffusion bonding.

摘要翻译： 一种在基板上安装芯片的安装方法包括暂时单独地将芯片接合在基板上的临时接合工艺，以及将临时接合在基板上的芯片牢固地单独接合在基板上的主接合工艺。 临时接合处理是根据要安装在基板上的芯片的数量反复执行第一基本处理。 第一个基本过程包括第一步和第二步。 第一步是在衬底的第一金属层上对齐每个芯片的第二金属层。 第二步是通过对第一和第二金属层进行固相扩散接合来临时接合每个芯片。 主键合工艺是根据衬底上芯片的数量反复执行第二个基本工艺。 第二个基本过程包括第三步和第四步。 第三步是识别临时安装在基板上的每个芯片的位置。 第四步骤是通过对第一和第二金属层进行液相扩散接合来牢固地结合每个芯片。

公开(公告)号：EP2858107A2

公开(公告)日：2015-04-08

申请号：EP14176759.0

申请日：2014-07-11

申请人： Kabushiki Kaisha Toshiba

发明人： Matsushita, Keiichi ,  Sasaki, Yo

IPC分类号： H01L23/373 ,  H01L21/58

CPC分类号： H01L23/3736 ,  H01L21/50 ,  H01L23/10 ,  H01L23/142 ,  H01L23/4827 ,  H01L24/03 ,  H01L24/05 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/49 ,  H01L24/83 ,  H01L2224/0346 ,  H01L2224/04026 ,  H01L2224/05073 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/05144 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05647 ,  H01L2224/2741 ,  H01L2224/2743 ,  H01L2224/29082 ,  H01L2224/29083 ,  H01L2224/29084 ,  H01L2224/29111 ,  H01L2224/29144 ,  H01L2224/29147 ,  H01L2224/29155 ,  H01L2224/29164 ,  H01L2224/29166 ,  H01L2224/29169 ,  H01L2224/32245 ,  H01L2224/32501 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2224/83192 ,  H01L2224/83193 ,  H01L2224/83203 ,  H01L2224/83359 ,  H01L2224/83379 ,  H01L2224/83447 ,  H01L2224/83825 ,  H01L2224/85444 ,  H01L2924/00014 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01046 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/10272 ,  H01L2924/10329 ,  H01L2924/1033 ,  H01L2924/13064 ,  H01L2924/13091 ,  H01L2924/161 ,  H01L2924/16195 ,  H01L2924/163 ,  H01L2924/171 ,  H01L2924/2064 ,  H01L2224/05644 ,  H01L2924/00012 ,  H01L2224/06164 ,  H01L2224/45099

摘要： According to one embodiment, a semiconductor device (110) includes a semiconductor element (20), a mounting member (70) including Cu, and a bonding layer (50) provided between the semiconductor element (20) and the mounting member (70). The bonding layer (50) includes a first region (R1) including Ti and Cu, and a second region (R2) provided between the first region (R1) and the mounting member (70), and including Sn and Cu. A first position (P1) along the first direction is positioned between the semiconductor element (20) and a second position (P2) along the first direction. The first position (P1) is where the composition ratio (51r) of Ti in the first region (R1) is 0.1 times a maximum value (51x) of the composition ratio (51r) of Ti. The second position (P2) is where the composition ratio (52r) of Sn in the second region (R2) is 0.1 times a maximum value (52x) of the composition ratio (52r) of Sn. A distance (L1) between the first position (P1) and the second position (P2) is not less than 0.1 micrometres.
According to another embodiment, a semiconductor device (120) includes a semiconductor element (20), a mounting member (70) including Cu, a first layer (41) provided between the semiconductor element (20) and the mounting member (70), the first layer (41) including Ti, a second layer (42) provided between the first layer (41) and the mounting member (70), the second layer (42) including Sn and Cu and a third layer (43) provided between the first layer (41) and the second layer (42), the third layer (43) including at least one selected from Ni, Pt, and Pd.
In both embodiments, the semiconductor device (110, 120) is formed by bonding the semiconductor element (20) to the mounting member (70) by solid solution bonding.
Thereby, a semiconductor device (110, 120) having good heat dissipation and high productivity can be provided.

摘要翻译： 。根据一个实施例，一种半导体器件（110）包括半导体元件（20）和所述安装部件之间提供了一种半导体元件（20），包含Cu的安装构件（70），以及结合层（50）（70） ， 该粘结层（50）包括第一区域（R1）包括TI和Cu，并且所述第一区域（R1）和所述安装构件（70）和含有Sn和Cu之间的第二区域（R2）。 沿第一方向的第一位置（P1）设置在半导体元件（20）和沿着所述第一方向的第二位置（P2）之间的位置。 第一位置（P1）是其中，Ti在第一区域（R1）的组成比（51R）为Ti的组成比（51R）的0.1倍的最大值（51X），第二位置（P2）是其中 在第二区域（R2）Sn的组成比（52R）为Sn的组成比（52R）的0.1倍的最大值（52X）。 第一位置（P1）和第二位置（P2）之间的距离（L1）为不小于0.1微米。 。根据另一个实施例，一种半导体器件（120）包括一个半导体元件（20），一个安装构件（70）包含Cu，半导体元件（20）和所述安装构件（70）之间提供的第一层（41）， 所述第一层（41）包含的Ti，之间设置含有Sn和Cu和第三层（43），所述第一层（41）和所述安装构件（70），第二层（42）之间的第二层（42） 所述第一层（41）和第二层（42），第三层（43）包括至少一个选自Ni，Pt和Pd中选择。 在两个实施例中，半导体器件（110,120）由所述半导体元件（20），以通过固溶接合所述安装构件（70）接合而形成。 由此，可以提供具有良好的散热和高生产率的半导体装置（110，120）。

公开(公告)号：EP2812912A2

公开(公告)日：2014-12-17

申请号：EP13702765.2

申请日：2013-01-25

申请人： Robert Bosch GmbH

发明人： FRUEH, Christiane ,  FIX, Andreas

IPC分类号： H01L21/60

CPC分类号： H01L24/32 ,  B23K1/0008 ,  B23K1/19 ,  B23K35/025 ,  B23K35/3006 ,  B23K2203/08 ,  B23K2203/56 ,  H01L24/27 ,  H01L24/29 ,  H01L24/30 ,  H01L24/83 ,  H01L2224/26125 ,  H01L2224/26155 ,  H01L2224/27013 ,  H01L2224/2732 ,  H01L2224/29016 ,  H01L2224/29105 ,  H01L2224/29111 ,  H01L2224/29113 ,  H01L2224/29118 ,  H01L2224/29124 ,  H01L2224/29139 ,  H01L2224/29147 ,  H01L2224/30515 ,  H01L2224/32013 ,  H01L2224/32014 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/32507 ,  H01L2224/83101 ,  H01L2224/83192 ,  H01L2224/83194 ,  H01L2224/83801 ,  H01L2224/83825 ,  H01L2224/8384 ,  H01L2224/8392 ,  H01L2224/83948 ,  H01L2224/83951 ,  H01L2924/01013 ,  H01L2924/0103 ,  H01L2924/01031 ,  H01L2924/0105 ,  H01L2924/01083 ,  H01L2924/01327 ,  H01L2924/10253 ,  H01L2924/1203 ,  H01L2924/1304 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15747 ,  H01L2924/3512 ,  H01L2924/00

摘要： The connection arrangement (100, 200, 300, 400) comprises at least one electric and/or electronic component (1). The at least one electric and/or electronic component (10) has at least one connection face (11), which is connected in a bonded manner to a join partner (40) by means of a connection layer (20). The connection layer (20) can for example be an adhesive, soldered, welded, sintered connection or another known connection that connects joining partners while forming a material connection. Furthermore, a reinforcement layer (30') is arranged adjacent to the connection layer (20) in a bonded manner. The reinforcement layer (30') has a higher modulus of elasticity than the connection layer (20). A particularly good protective effect is achieved if the reinforcement layer (30') is formed in a frame-like manner by an outer and an inner boundary (36, 35) and, at least with the outer boundary (36) thereof, encloses the connection face (11) of the at least one electric and/or electronic component (10).

公开(公告)号：EP2800130A1

公开(公告)日：2014-11-05

申请号：EP13165820.5

申请日：2013-04-29

申请人： ABB Technology AG

发明人： Brem, Franziska ,  Liu, Chunlei ,  Duran, Hamit

IPC分类号： H01L21/60 ,  H01L23/13 ,  H01L23/495 ,  H01L23/051

CPC分类号： H01L24/92 ,  H01L21/6836 ,  H01L23/051 ,  H01L23/13 ,  H01L23/16 ,  H01L23/24 ,  H01L23/3121 ,  H01L23/367 ,  H01L23/3735 ,  H01L23/49503 ,  H01L23/49513 ,  H01L24/05 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/83 ,  H01L24/95 ,  H01L2221/68327 ,  H01L2221/68363 ,  H01L2221/68368 ,  H01L2224/04026 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05171 ,  H01L2224/05639 ,  H01L2224/05647 ,  H01L2224/26135 ,  H01L2224/26165 ,  H01L2224/2746 ,  H01L2224/2747 ,  H01L2224/291 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/32227 ,  H01L2224/32238 ,  H01L2224/32258 ,  H01L2224/32503 ,  H01L2224/32507 ,  H01L2224/33181 ,  H01L2224/83007 ,  H01L2224/83101 ,  H01L2224/83139 ,  H01L2224/8314 ,  H01L2224/83141 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83193 ,  H01L2224/83201 ,  H01L2224/8321 ,  H01L2224/83222 ,  H01L2224/83385 ,  H01L2224/83439 ,  H01L2224/83447 ,  H01L2224/83801 ,  H01L2224/83825 ,  H01L2224/92147 ,  H01L2224/92247 ,  H01L2924/13055 ,  H01L2924/15159 ,  H01L2924/15162 ,  H01L2924/15747 ,  H01L2924/15787 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/00

摘要： A method for bonding an electronics chip (10) to a substrate (12), the method comprising the steps of: coating a bonding area (14) of the chip (10) with a first metal layer (18); providing a bonding area (24) of the substrate (12) and/or the bonding area (14) of the chip (10) with a low melting point metal layer (30), wherein the bonding area (24) of the substrate (12) comprises a second metal layer (28); attaching a spacer (20) to the chip (10) and/or the substrate (12); positioning and fixing the chip (10) on the substrate (12); and transient liquid phase bonding the chip (10) to the substrate (12) by melting the low melting point layer (30), wherein the spacer (20) provides a specific distance between the first metal layer (18) and the second metal layer (28).

摘要翻译： 一种用于电子芯片（10）的键合到基底（12）的方法，该方法包括以下步骤：涂覆所述芯片（10）与第一金属层（18）的接合区域（14）; 提供所述基板的基板的接合区（24）（12）和/或芯片（10）具有低的低熔点金属层（30）的接合区域（14），其中，所述结合区域（24）（ 12）包括第二金属层（28）; 附接的间隔件（20）与芯片（10）和/或基底（12）; 定位和固定在基板上的芯片（10）（12）; 和瞬态液相接合芯片（10）到所述衬底（12）通过熔化低熔点层（30），其中所述间隔物（20）提供所述第一金属层（18）和第二金属层之间的特定距离 （28）。

公开(公告)号：EP2542500A1

公开(公告)日：2013-01-09

申请号：EP11708431.9

申请日：2011-03-01

申请人： SensoNor Technologies AS

发明人： HOIVIK, Nils ,  STARK, Birger ,  ELFING, Anders ,  WANG, Kaiying

IPC分类号： B81C1/00

CPC分类号： B81C1/00269 ,  B81C2203/0118 ,  B81C2203/035 ,  H01L21/50 ,  H01L23/10 ,  H01L24/83 ,  H01L24/94 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/27462 ,  H01L2224/27464 ,  H01L2224/276 ,  H01L2224/29011 ,  H01L2224/29082 ,  H01L2224/29111 ,  H01L2224/29139 ,  H01L2224/29147 ,  H01L2224/29155 ,  H01L2224/32145 ,  H01L2224/83007 ,  H01L2224/83193 ,  H01L2224/83204 ,  H01L2224/83207 ,  H01L2224/8381 ,  H01L2224/83825 ,  H01L2224/8383 ,  H01L2224/94 ,  H01L2225/06513 ,  H01L2924/00013 ,  H01L2924/01006 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01075 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/1461 ,  H01L2924/16235 ,  H01L2924/164 ,  Y10T428/12493 ,  H01L2924/00014 ,  H01L2224/83 ,  H01L2224/81 ,  H01L2224/13099 ,  H01L2224/05099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2924/00

摘要： A metal inter-diffusion bonding method comprises providing a stack of a first metal on a surface of both a first wafer and second wafer to be joined together. Said first metal is susceptible to oxidation in air. A layer of a second metal is provided on the first metal and has a melting point lower than that of the first metal. On the top surface of each stack of first metal is the layer of second metal sufficiently thick to both inhibit oxidation of the top surface of the first metal and to ensure that unreacted Sn remains when partners are brought together. A bond is initiated between the first and second wafers by bringing the layers of the second metal on each wafer into contact at a bonding temperature that is below the melting point of the second metal, by applying a bonding force that is sufficient to initiate inter-diffusion at an interface between the layers of the second metal. The bonding temperature is increased whilst applying the bonding force to achieve a desired inter-diffusion at the bond interface, thereby bonding the first and second wafers together, and no pre-treatment of the wafers is required prior to bonding.

公开(公告)号：EP2211383A2

公开(公告)日：2010-07-28

申请号：EP10250120.2

申请日：2010-01-25

申请人： THE BOEING COMPANY

发明人： Barvosa-Carter, William B. ,  Gross, Adam F.

IPC分类号： H01L23/373 ,  H01L23/433

CPC分类号： H01L23/433 ,  H01L23/373 ,  H01L23/3736 ,  H01L24/29 ,  H01L24/31 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/83101 ,  H01L2224/83825 ,  H01L2224/8383 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01018 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01079 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/1033 ,  H01L2924/14 ,  H01L2924/1423 ,  H01L2924/157 ,  Y10T428/12007 ,  H01L2924/01048 ,  H01L2924/01083 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2924/00014

摘要： A method for bonding nano-elements to a surface is described. The method includes applying a layer of a first metal to a first end of a plurality of substantially aligned nano-elements, positioning a layer of a second metal adjacent to the layer of the first metal, placing a compressive force across the nano-elements, the metal layers, and the substrate, and elevating the temperature of the nano-elements, the metal layers, and a substrate adjacent the layer of the second metal such that the metal layers form at least one of a eutectic bond, a metal solid solution, and an alloy bond between the nano-elements and the substrate.

公开(公告)号：EP1748480B1

公开(公告)日：2009-06-24

申请号：EP05016387.2

申请日：2005-07-28

申请人： Infineon Technologies AG

发明人： Otremba, Ralf, Dipl.-Phys./Dipl.-Ing. (FH)

IPC分类号： H01L21/60 ,  H01L23/495

CPC分类号： H01L23/49513 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L2224/04026 ,  H01L2224/29101 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/29147 ,  H01L2224/2919 ,  H01L2224/32245 ,  H01L2224/32507 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48464 ,  H01L2224/73265 ,  H01L2224/8381 ,  H01L2224/83825 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/10253 ,  H01L2924/12032 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/01049 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/3512 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

公开(公告)号：EP0833384A3

公开(公告)日：1999-10-13

申请号：EP97116090.8

申请日：1997-09-16

申请人： SIEMENS AKTIENGESELLSCHAFT

发明人： Hübner, Holger, Dr. ,  Schneegans, Manfred, Dr.

IPC分类号： H01L23/492 ,  H01L21/60

CPC分类号： H01L24/83 ,  B23K35/007 ,  B23K35/262 ,  B23K2035/008 ,  H01L23/4924 ,  H01L24/29 ,  H01L2224/04026 ,  H01L2224/83191 ,  H01L2224/83801 ,  H01L2224/8381 ,  H01L2224/83825 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/0102 ,  H01L2924/01021 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01061 ,  H01L2924/01074 ,  H01L2924/01076 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/10253

摘要： Es wird ein Metallschichtsystem zur Verlötung von Leistungshalbleitern mit Kühlkörpern vorgestellt, bei dem gegenüber den bekannten vier Metallschichtsystemen auf zwei Metallschichten verzichtet werden kann. Dabei wird auf die Halbleiterkörperrückseite (3) eine Chromschicht (4) aufgesputtert und auf die Chromschicht (4) eine Zinnschicht (5) aufgedampft. Danach wird der Halbleiterkörper (1) mit der metallenen Trägerplatte (2) durch Erwärmen auf Temperaturen oberhalb 250°C unmittelbar, d.h. ohne weitere Zusätze, verlötet.

摘要翻译： 用于通过金属层顺序焊接到金属载体板（2）的硅半导体本体（1）在其背面（3）上具有涂覆有锡层（5）的铬层（4）。 优选地，铬层（4）是50nm厚的溅射层，并且锡层（5）是小于3000nm厚的气相沉积层。 还要求的是将上述主体焊接到金属载体板上的方法，包括将主体（1）放置在载体板（2）上并在高于250℃下加热。

公开(公告)号：EP0186829B1

公开(公告)日：1991-08-07

申请号：EP85115865.9

申请日：1985-12-12

申请人： Asea Brown Boveri Aktiengesellschaft

发明人： Jahnke, Bernd, Dr. Dipl.-Phys. ,  Ingram, Peter, Dipl.-Chem. ,  Neidig, Arno, Dr. Dipl.-Phys.

IPC分类号： H01L21/60 ,  H01L23/48

CPC分类号： H01L24/80 ,  H01L23/4924 ,  H01L24/29 ,  H01L24/83 ,  H01L2224/04026 ,  H01L2224/2908 ,  H01L2224/29083 ,  H01L2224/29111 ,  H01L2224/29116 ,  H01L2224/8319 ,  H01L2224/83205 ,  H01L2224/83801 ,  H01L2224/83825 ,  H01L2224/8383 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01061 ,  H01L2924/01068 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/0134 ,  H01L2924/014 ,  H01L2924/157 ,  H01L2924/01028 ,  H01L2924/0133 ,  H01L2924/00012 ,  H01L2924/00014

公开(公告)号：EP0186829A3

公开(公告)日：1987-08-12

申请号：EP85115865

申请日：1985-12-12

申请人： BROWN, BOVERI & CIE Aktiengesellschaft

发明人： Jahnke, Bernd, Dr. Dipl.-Phys. ,  Ingram, Peter, Dipl.-Chem. ,  Neidig, Arno, Dr. Dipl.-Phys.

IPC分类号： H01L21/60 ,  H01L23/48

CPC分类号： H01L24/80 ,  H01L23/4924 ,  H01L24/29 ,  H01L24/83 ,  H01L2224/04026 ,  H01L2224/2908 ,  H01L2224/29083 ,  H01L2224/29111 ,  H01L2224/29116 ,  H01L2224/8319 ,  H01L2224/83205 ,  H01L2224/83801 ,  H01L2224/83825 ,  H01L2224/8383 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01061 ,  H01L2924/01068 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/0134 ,  H01L2924/014 ,  H01L2924/157 ,  H01L2924/01028 ,  H01L2924/0133 ,  H01L2924/00012 ,  H01L2924/00014