Abstract:
An electronics package (40) is disclosed herein that includes a glass substrate (42) having an exterior portion (44) surrounding an interior portion thereof, wherein the interior portion has a first thickness and the exterior portion (44) has a second thickness larger than the first thickness (48). An adhesive layer (64) is formed on a lower surface of the interior portion (50) of the glass substrate (42). A semiconductor device (68, 70) having an upper surface is coupled to the adhesive layer (64), the semiconductor device (68, 70) having at least one contact pad (72) disposed on the upper surface (74) thereof. A first metallization layer (88) is coupled to an upper surface (90) of the glass substrate (42) and extends through a first via (54) formed through the first thickness (48) of the glass substrate (42) to couple with the at least one contact pad (72) of the semiconductor device (68, 70).
Abstract:
Thermal interface compositions (20) contain filler particles possessing a maximum particle size less than 25 microns in diameter blended with a polymer matrix. Such compositions enable lower attainable bond line thickness, which decreases in-situ thermal resistances that exist between thermal interface materials (20) and the corresponding mating surfaces.
Abstract:
A multi-chip semiconductor package (200) includes a dielectric interconnect layer (260) having an upper surface (261) and a bottom surface, at least one common source pad (280) disposed on the upper surface of the interconnect layer, at least one common gate pad (292) disposed on the upper surface of the interconnect layer, and a plurality of semiconductor devices (100) each including a gate pad and at least one source pad adhered onto the interconnect layer, wherein the source pads of the plurality of semiconductor devices are electrically connected to the at least one common source pad, and wherein the source pads of the plurality of semiconductor devices are electrically connected in parallel with one another, and wherein the gate pads of the plurality of semiconductor devices are electrically connected to the common gate pad, and wherein the gate pads of the plurality of semiconductor devices are electrically connected in parallel with one another.
Abstract:
A die (102) for a semiconductor chip package includes a first surface (104) including an integrated circuit (106) formed therein. The die also includes a backside surface (108) opposite the first surface. The backside surface has a total surface area (206) defining a substantially planar region (302) of the backside surface. The die further includes at least one device (132) formed on the backside surface. The at least one device includes at least one extension (136) extending from the at least one device beyond the total surface area.
Abstract:
An electronic package is provided. The electronic package includes a substrate (102) and a plurality of vias defined by a corresponding plurality of pre-defined via patterns. The electronic package further a metal built-up layer (120) disposed on portions of the substrate (102) to provide a plurality of pre-defined via locations and the plurality of pre-defined via patterns of the plurality of vias. Also, the electronic package includes a first conductive layer (152) disposed on at least a portion of the metal built-up layer (120). Moreover, the electronic package includes a second conductive layer (160) disposed on the first conductive layer (152), where the plurality of vias is disposed at least in part in the metal built-up layer (120), the first conductive layer (152), and the second conductive layer (160).
Abstract:
A semiconductor assembly (100) includes a semiconductor device (102) and a POL-RDL package (150) coupled to said device (102). The device (102) includes an upper surface (104), a gate pad (120) and at least one source pad (110) disposed on said upper surface (104). The POL-RDL package (150) includes a dielectric layer (160) having at least one source pad (170) electrically coupled to said at least one source pad (110) of said device (102) and at least one contact pad (180) disposed on an upper surface (161) of said POL-RDL package (150). At least one trace connection (172) having a resistivity value electrically and couples said at least one source pad (170) of said POL-RDL package (150) to said at least one contact pad (180).
Abstract:
An electronic package is provided. The electronic package includes a substrate (102) and a plurality of vias defined by a corresponding plurality of pre-defined via patterns. The electronic package further a metal built-up layer (120) disposed on portions of the substrate (102) to provide a plurality of pre-defined via locations and the plurality of pre-defined via patterns of the plurality of vias. Also, the electronic package includes a first conductive layer (152) disposed on at least a portion of the metal built-up layer (120). Moreover, the electronic package includes a second conductive layer (160) disposed on the first conductive layer (152), where the plurality of vias is disposed at least in part in the metal built-up layer (120), the first conductive layer (152), and the second conductive layer (160).
Abstract:
An integrated circuit (IC) device (300) is described. The IC device (300) includes a substrate (302). A connection component (304) including a cavity (324) therethrough is attached to the substrate (302). A memory die (312) is positioned in the cavity (324) of the connection component (304) and is electrically coupled to the substrate (302). A logic die (308) extends over the memory die (312) and at least a portion of the connection component (304), and is electrically coupled to the connection component (304) and the memory die (312). The connection component (304) is formed free of through silicon vias and is electrically coupled to the substrate (302) through wire bonding.
Abstract:
A die (102) for a semiconductor chip package includes a first surface (104) including an integrated circuit (106) formed therein. The die also includes a backside surface (108) opposite the first surface. The backside surface has a total surface area (206) defining a substantially planar region (302) of the backside surface. The die further includes at least one device (132) formed on the backside surface. The at least one device includes at least one extension (136) extending from the at least one device beyond the total surface area.
Abstract:
A power overlay (POL) structure includes a power device (38) having at least one upper contact pad (44,46) disposed on an upper surface of the power device (38), and a POL interconnect layer (88) having a dielectric layer (74) coupled to the upper surface of the power device (38) and a metallization layer (80) having metal interconnects (86) extending through vias formed through the dielectric layer (74) and electrically coupled to the at least one upper contact pad (46,48) of the power device (38). The POL structure also includes at least one copper wirebond (96,98,100) directly coupled to the metallization layer (80).