公开(公告)号：US08183633B2

公开(公告)日：2012-05-22

申请号：US12847974

申请日：2010-07-30

Applicant: O-Kyun Kwon ,  Dong-Woo Suh ,  Jung-Hyung Pyo ,  Gyung-Ock Kim

Inventor： O-Kyun Kwon ,  Dong-Woo Suh ,  Jung-Hyung Pyo ,  Gyung-Ock Kim

IPC: H01L27/12

CPC classification number: H01L21/76267 ,  H01L21/76283

Abstract: Provided is a semiconductor and a method for forming the same. The method includes forming a buried insulating layer locally in a substrate. The substrate is etched to form an opening exposing the buried insulating layer, and a silicon pattern spaced in at least one direction from the substrate is formed on the buried insulating layer. A first insulating layer is formed to enclose the silicon pattern.

Abstract translation: 提供半导体及其形成方法。 该方法包括在衬底中局部形成掩埋绝缘层。 蚀刻衬底以形成露出掩埋绝缘层的开口，并且在掩埋绝缘层上形成从衬底至少一个方向间隔开的硅图案。 形成第一绝缘层以包围硅图案。

公开(公告)号：US08165437B2

公开(公告)日：2012-04-24

申请号：US12684677

申请日：2010-01-08

Applicant: Jung-Hyung Pyo ,  O-Kyun Kwon ,  Gyung-Ock Kim

Inventor： Jung-Hyung Pyo ,  O-Kyun Kwon ,  Gyung-Ock Kim

IPC: G02B6/34 ,  G02B6/42

CPC classification number: G02B6/34 ,  G02B6/124 ,  G02B6/30

Abstract: Provided are semiconductor integrated circuits including a grating coupler for optical communication and methods of forming the same. The semiconductor integrated circuit includes: a cladding layer disposed on a semiconductor substrate; a grating coupler including an optical waveguide on the cladding layer and a grating on the optical waveguide; and at least one reflector formed in the cladding layer below the grating.

Abstract translation: 提供了包括用于光通信的光栅耦合器的半导体集成电路及其形成方法。 半导体集成电路包括：设置在半导体衬底上的覆层; 包括在所述包层上的光波导的光栅耦合器和所述光波导上的光栅; 以及形成在光栅下方的包覆层中的至少一个反射器。

公开(公告)号：US07790567B2

公开(公告)日：2010-09-07

申请号：US12130877

申请日：2008-05-30

Applicant: O-Kyun Kwon ,  Dong-Woo Suh ,  Jung-Hyung Pyo ,  Gyung-Ock Kim

Inventor： O-Kyun Kwon ,  Dong-Woo Suh ,  Jung-Hyung Pyo ,  Gyung-Ock Kim

IPC: H01L21/76

CPC classification number: H01L21/76267 ,  H01L21/76283

Abstract: Provided is a semiconductor and a method for forming the same. The method includes forming a buried insulating layer locally in a substrate. The substrate is etched to form an opening exposing the buried insulating layer, and a silicon pattern spaced in at least one direction from the substrate is formed on the buried insulating layer. A first insulating layer is formed to enclose the silicon pattern.

Abstract translation: 提供半导体及其形成方法。 该方法包括在衬底中局部形成掩埋绝缘层。 蚀刻衬底以形成露出掩埋绝缘层的开口，并且在掩埋绝缘层上形成从衬底至少一个方向间隔开的硅图案。 形成第一绝缘层以包围硅图案。

公开(公告)号：US20100159674A1

公开(公告)日：2010-06-24

申请号：US12488577

申请日：2009-06-21

Applicant: In-Gyoo Kim ,  O-Kyun Kwon ,  Dong-Woo Suh ,  Gyung-Ock Kim

Inventor： In-Gyoo Kim ,  O-Kyun Kwon ,  Dong-Woo Suh ,  Gyung-Ock Kim

IPC: H01L21/20

CPC classification number: H01L21/2007 ,  H01L21/76251

Abstract: Provided is a method of fabricating a semiconductor device. The method includes forming a first layer, a second layer, an ion implantation layer between the first and second layers, and an anti-oxidation layer on the second layer, and performing a heat treating process to form an insulating layer between the first and second layers while preventing loss of the second layer using the anti-oxidation layer.

Abstract translation: 提供一种制造半导体器件的方法。 该方法包括在第一层和第二层之间形成第一层，第二层，离子注入层和第二层上的抗氧化层，并进行热处理工艺，以在第一层和第二层之间形成绝缘层 同时防止使用抗氧化层损失第二层。

公开(公告)号：US20090152673A1

公开(公告)日：2009-06-18

申请号：US12130877

申请日：2008-05-30

Applicant: O-Kyun KWON ,  Dong-Woo SUH ,  Junghyung PYO ,  Gyung-Ock KIM

Inventor： O-Kyun KWON ,  Dong-Woo SUH ,  Junghyung PYO ,  Gyung-Ock KIM

IPC: H01L23/482 ,  H01L21/76

CPC classification number: H01L21/76267 ,  H01L21/76283

Abstract: Provided is a semiconductor and a method for forming the same. The method includes forming a buried insulating layer locally in a substrate. The substrate is etched to form an opening exposing the buried insulating layer, and a silicon pattern spaced in at least one direction from the substrate is formed on the buried insulating layer. A first insulating layer is formed to enclose the silicon pattern.

Abstract translation: 提供半导体及其形成方法。 该方法包括在衬底中局部形成掩埋绝缘层。 蚀刻衬底以形成露出掩埋绝缘层的开口，并且在掩埋绝缘层上形成从衬底至少一个方向间隔开的硅图案。 形成第一绝缘层以包围硅图案。

公开(公告)号：US07478954B2

公开(公告)日：2009-01-20

申请号：US11737255

申请日：2007-04-19

Applicant: In Kui Cho ,  Woo Jin Lee ,  Sang Pil Han ,  Seung Ho Ahn ,  Gyung Ock Kim ,  Hee Kyung Sung

Inventor： In Kui Cho ,  Woo Jin Lee ,  Sang Pil Han ,  Seung Ho Ahn ,  Gyung Ock Kim ,  Hee Kyung Sung

IPC: G02B6/43 ,  G02B6/30 ,  G02B6/36

CPC classification number: G02B6/43 ,  G02B6/2552 ,  G02B6/4202 ,  G02B6/4239 ,  H01L2224/45139 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/49175 ,  H01L2924/00 ,  H01L2924/00014

Abstract: Provided are a method and structure for optical connection between an optical transmitter and an optical receiver. The method includes the steps of: forming on a substrate a light source device, an optical detection device, an optical transmission unit electrically connected with the light source device, and an optical detection unit electrically connected with the optical detection device; preparing a flexible optical transmission-connection medium to optically connect the light source device with the optical detection device; cutting the prepared optical transmission-connection medium and surface-finishing it; and connecting one end of the surface-finished optical transmission-connection medium with the light source device and the other end with the optical detection device. Fabrication of an optical package having a 3-dimensional structure is facilitated and fabrication time is reduced, thus improving productivity. In addition, since the optical transmission-connection medium is directly connected with the light source device and the optical detection device, a polishing operation or additional connection block is not required, thus facilitating mass production.

Abstract translation: 提供了一种用于光发射机和光接收机之间的光连接的方法和结构。 该方法包括以下步骤：在基板上形成光源装置，光检测装置，与光源装置电连接的光传输单元以及与该光检测装置电连接的光检测单元; 准备柔性光传输连接介质以将光源装置与光学检测装置光学连接; 切割准备的光传输连接介质并进行表面处理; 并且将表面光整传输连接介质的一端与光源装置连接，另一端与光学检测装置连接。 促进了具有3维结构的光学封装的制造，并减少了制造时间，从而提高了生产率。 此外，由于光传输连接介质与光源装置和光学检测装置直接连接，因此不需要抛光操作或附加连接块，因此便于批量生产。

公开(公告)号：US20080142900A1

公开(公告)日：2008-06-19

申请号：US12021764

申请日：2008-01-29

Applicant: Hyun Tak KIM ,  Kwang Yong KANG ,  Bong Jun KIM ,  Yong Wook LEE ,  Sun Jin YUN ,  Byung Gyu CHAE ,  Gyung Ock KIM

Inventor： Hyun Tak KIM ,  Kwang Yong KANG ,  Bong Jun KIM ,  Yong Wook LEE ,  Sun Jin YUN ,  Byung Gyu CHAE ,  Gyung Ock KIM

IPC: H01L29/76

CPC classification number: H01L49/003

Abstract: Provided are an abrupt metal-insulator transition (MIT) device for bypassing super-high voltage noise to protect an electric and/or electronic system, such as, a high-voltage switch, from a super-high voltage, a high-voltage noise removing circuit for bypassing the super-high voltage noise using the abrupt MIT device, and an electric and/or electronic system including the high-voltage noise removing circuit. The abrupt MIT device includes a substrate, a first abrupt MIT structure, and a second abrupt MIT structure. The first and second abrupt MIT structures are formed on an upper surface and a lower surface, respectively, of the substrate. The high-voltage noise removing circuit includes an abrupt MIT device chain connected in parallel to the electric and/or electronic system to be protected. The abrupt MIT device chain includes at least two abrupt MIT devices serially connected to each other.

Abstract translation: 提供了用于绕过超高压噪声以保护诸如高压开关的电和/或电子系统的突发金属 - 绝缘体转变（MIT）装置，从超高电压，高压噪声 使用突发MIT装置绕过超高压噪声的除电路，以及包括高压噪声去除电路的电气和/或电子系统。 突变MIT装置包括基板，第一突发MIT结构和第二突发MIT结构。 第一和第二突变MIT结构分别形成在基板的上表面和下表面上。 高电压噪声去除电路包括与要保护的电和/或电子系统并联连接的突变MIT装置链。 突发MIT设备链包括彼此串行连接的至少两个突发MIT设备。

公开(公告)号：US06992360B2

公开(公告)日：2006-01-31

申请号：US10803885

申请日：2004-03-19

Applicant: In Gyoo Kim ,  Gyung Ock Kim

Inventor： In Gyoo Kim ,  Gyung Ock Kim

IPC: H01L31/0232

CPC classification number: G02B6/12002 ,  G02B6/4203 ,  H01L31/0232

Abstract: Provided is a light coupling apparatus that forms an etch structure complex comprising a total reflection surface/an anti-reflection surface within a substrate to improve coupling efficiency with incident light and responsivity of a photodetector device, whereby a surface-illuminated photodetector or an edge-coupled photodetector are all integratable, and it is possible to reduce the degree of difficulty during packaging and to improve the responsivity of the photodetector at low costs.

Abstract translation: 提供一种光耦合装置，其形成包括基板内的全反射面/抗反射面的蚀刻结构复合体，以提高与入射光的耦合效率和光检测器装置的响应度，由此表面照明光电检测器或边缘 - 耦合光电检测器都是可整合的，并且可以降低封装期间的难度，并且以低成本提高光电检测器的响应度。

公开(公告)号：US5770866A

公开(公告)日：1998-06-23

申请号：US736213

申请日：1996-10-25

Applicant: Gyung-Ock Kim ,  Dong-Wan Roh ,  Seung-Won Paek

Inventor： Gyung-Ock Kim ,  Dong-Wan Roh ,  Seung-Won Paek

IPC: H01L29/68 ,  H01L29/06 ,  H01L29/66 ,  H01L29/737 ,  H01L29/772 ,  H01L29/88 ,  H01L29/15

CPC classification number: B82Y10/00 ,  H01L29/882

Abstract: The present invention provides a resonant tunneling electronic device having a plurality of nearly decoupled quantum barrier layers and quantum-well layers alternatively formed between an emitter layer and a collector layer, and has a stacked structure in such a manner that in the order of their stack the heights of the quantum barriers are gradually increased, and the widths of the quantum-wells interposed between the quantum barrier layers are gradually decreased, so that electron resonant tunneling through the aligned quantum with confined states under the application of external bias can occur.

Abstract translation: 本发明提供了一种谐振隧道电子器件，其具有多个几乎去耦的量子势垒层和交替地形成在发射极层和集电极层之间的量子阱层，并且具有堆叠结构，使得它们的堆叠 量子势垒的高度逐渐增加，量子势垒层之间插入的量子阱的宽度逐渐减小，从而在外部偏置的应用下，可能发生通过对准量子与限制状态的电子共振隧穿。

公开(公告)号：US5446293A

公开(公告)日：1995-08-29

申请号：US338117

申请日：1994-11-09

Applicant: Hye-Yong Chu ,  Pyong-Woon Park ,  Seon-Gyu Han ,  Young-Wan Choi ,  Gyung-Ock Kim

Inventor： Hye-Yong Chu ,  Pyong-Woon Park ,  Seon-Gyu Han ,  Young-Wan Choi ,  Gyung-Ock Kim

IPC: H01L31/10 ,  H01L31/0352 ,  H01L27/14 ,  H01L31/00

CPC classification number: B82Y10/00 ,  H01L31/0352

Abstract: Disclosed is an operation principle and an epitaxial structure of resonant tunneling opto-electronic device. According to the present invention, the photo-generated holes stored in front of the double barrier quantum well structure by light illumination. As a result, a large potential drop occurs in the double barrier quantum well structure. And a peak signal of the opto-electronic resonant tunneling device is generated at a relatively lower voltage illumination to one generated before introducing the light into the device. An amount of photocurrent is 10.sup.3 times and over as compared to the conventional p-i-n diode because a resonant tunneling current is optically controlled by light illumination. So that, it is possible to drive peripheral circuit without use of additional amplifiers for amplifying an output signal from the opto-electronic device.

Abstract translation: 公开了谐振隧道光电器件的工作原理和外延结构。 根据本发明，通过光照射存储在双重阻挡量子阱结构前面的光生孔。 结果，双重势垒量子阱结构中出现大的电位降。 光电共振隧穿装置的峰值信号在相对较低的电压照明下产生，并将光引入装置之前产生。 与传统的p-i-n二极管相比，光电流量是103倍以上，因为谐振隧穿电流是通过光照射来光学控制的。 因此，可以驱动外围电路而不使用用于放大来自光电子器件的输出信号的附加放大器。