利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

55 条记录 (耗时 0.026 秒)

    Through-silicon via with scalloped sidewalls
    1.
    发明授权
    Through-silicon via with scalloped sidewalls 有权
    通硅硅通孔与扇形侧壁

    公开(公告)号：US08049327B2

    公开(公告)日：2011-11-01

    申请号：US12348650

    申请日：2009-01-05

    申请人： Chen-Cheng Kuo ,  Chih-Hua Chen ,  Ming-Fa Chen ,  Chen-Shien Chen

    发明人： Chen-Cheng Kuo ,  Chih-Hua Chen ,  Ming-Fa Chen ,  Chen-Shien Chen

    IPC分类号： H01L23/04

    CPC分类号： H01L21/76898 ,  H01L23/481 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A semiconductor device having one or more through-silicon vias (TSVs) is provided. The TSVs are formed such that sidewalls of the TSVs have a scalloped surface. In an embodiment, the sidewalls of the TSVs are sloped wherein a top and bottom of the TSVs have different dimensions. The TSVs may have a V-shape wherein the TSVs have a wider dimension on a circuit side of the substrate, or an inverted V-shape wherein the TSVs have a wider dimension on a backside of the substrate. The scalloped surfaces of the sidewalls and/or sloped sidewalls allow the TSVs to be more easily filled with a conductive material such as copper.

    摘要翻译： 提供了具有一个或多个穿硅通孔（TSV）的半导体器件。 TSV形成为使得TSV的侧壁具有扇形表面。 在一个实施例中，TSV的侧壁是倾斜的，其中TSV的顶部和底部具有不同的尺寸。 TSV可以具有V形，其中TSV在衬底的电路侧具有更宽的尺寸，或者是倒V形，其中TSV在衬底的背面具有更宽的尺寸。 侧壁和/或倾斜侧壁的扇形表面允许TSV更容易地用诸如铜的导电材料填充。

    Through-Silicon Via With Scalloped Sidewalls
    2.
    发明申请
    Through-Silicon Via With Scalloped Sidewalls 有权
    通过硅片通过扇形侧壁

    公开(公告)号：US20100171223A1

    公开(公告)日：2010-07-08

    申请号：US12348650

    申请日：2009-01-05

    申请人： Chen-Cheng Kuo ,  Chih-Hua Chen ,  Ming-Fa Chen ,  Chen-Shien Chen

    发明人： Chen-Cheng Kuo ,  Chih-Hua Chen ,  Ming-Fa Chen ,  Chen-Shien Chen

    IPC分类号： H01L23/48 ,  H01L21/4763

    CPC分类号： H01L21/76898 ,  H01L23/481 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A semiconductor device having one or more through-silicon vias (TSVs) is provided. The TSVs are formed such that sidewalls of the TSVs have a scalloped surface. In an embodiment, the sidewalls of the TSVs are sloped wherein a top and bottom of the TSVs have different dimensions. The TSVs may have a V-shape wherein the TSVs have a wider dimension on a circuit side of the substrate, or an inverted V-shape wherein the TSVs have a wider dimension on a backside of the substrate. The scalloped surfaces of the sidewalls and/or sloped sidewalls allow the TSVs to be more easily filled with a conductive material such as copper.

    摘要翻译： 提供了具有一个或多个穿硅通孔（TSV）的半导体器件。 TSV形成为使得TSV的侧壁具有扇形表面。 在一个实施例中，TSV的侧壁是倾斜的，其中TSV的顶部和底部具有不同的尺寸。 TSV可以具有V形，其中TSV在衬底的电路侧具有更宽的尺寸，或者是倒V形，其中TSV在衬底的背面具有更宽的尺寸。 侧壁和/或倾斜侧壁的扇形表面允许TSV更容易地用诸如铜的导电材料填充。

    Multi-Direction Design for Bump Pad Structures
    5.
    发明申请
    Multi-Direction Design for Bump Pad Structures 有权
    凸块结构的多方向设计

    公开(公告)号：US20110186988A1

    公开(公告)日：2011-08-04

    申请号：US12700004

    申请日：2010-02-04

    申请人： Chih-Hua Chen ,  Chen-Shien Chen ,  Chen-Cheng Kuo ,  Tzuan-Horng Liu

    发明人： Chih-Hua Chen ,  Chen-Shien Chen ,  Chen-Cheng Kuo ,  Tzuan-Horng Liu

    IPC分类号： H01L23/485 ,  H01L23/498

    CPC分类号： H01L24/11 ,  H01L23/485 ,  H01L23/498 ,  H01L23/49811 ,  H01L24/27 ,  H01L2224/05552 ,  H01L2924/14 ,  H01L2924/35121 ,  H01L2924/365 ,  H01L2924/00012 ,  H01L2924/00

    摘要： An integrated circuit structure includes a semiconductor chip having a first region and a second region; a dielectric layer formed on the first region and the second region of the semiconductor chip; a first elongated under-bump metallization (UBM) connector formed in the dielectric layer and on the first region of the semiconductor chip and having a first longer axis extending in a first direction; and a second elongated UBM connector formed in the dielectric layer on the second region of the semiconductor chip and having a second longer axis extending in a second direction. The first direction is different from the second direction.

    摘要翻译： 集成电路结构包括具有第一区域和第二区域的半导体芯片; 形成在半导体芯片的第一区域和第二区域上的电介质层; 形成在所述电介质层中且在所述半导体芯片的所述第一区域上并且具有沿第一方向延伸的第一长轴的第一细长凹凸金属化（UBM）连接器; 以及第二细长UBM连接器，其形成在所述半导体芯片的所述第二区域上的所述电介质层中，并且具有沿第二方向延伸的第二长轴。 第一个方向与第二个方向不同。

    Through silicon via with dummy structure and method for forming the same
    6.
    发明授权
    Through silicon via with dummy structure and method for forming the same 有权
    通过具有虚拟结构的硅通孔及其形成方法

    公开(公告)号：US07969013B2

    公开(公告)日：2011-06-28

    申请号：US12791978

    申请日：2010-06-02

    申请人： Chih-Hua Chen ,  Chen-Shien Chen ,  Chen-Cheng Kuo ,  Wen-Wei Shen

    发明人： Chih-Hua Chen ,  Chen-Shien Chen ,  Chen-Cheng Kuo ,  Wen-Wei Shen

    IPC分类号： H01L23/48

    CPC分类号： H01L21/76898 ,  H01L23/481 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A through silicon via structure includes a top pad and a vertical conductive post that is connected to the top pad. The top pad covers a wider area than the cross section of the vertical conductive post. An interconnect pad is formed at least partially below the top pad. An under layer is also formed at least partially below the top pad. At least one dummy structure connects the top pad and the under layer to fasten the top pad and the interconnect pad.

    摘要翻译： 透硅通孔结构包括顶焊盘和连接到顶焊盘的垂直导电柱。 顶部焊盘覆盖比垂直导电柱的横截面更宽的区域。 互连焊盘至少部分地形成在顶部焊盘的下方。 底层也至少部分地形成在顶垫的下方。 至少一个虚拟结构连接顶部焊盘和下层以紧固顶部焊盘和互连焊盘。

    Tapered through-silicon via structure
    8.
    发明申请
    Tapered through-silicon via structure 有权
    锥形硅通孔结构

    公开(公告)号：US20080283959A1

    公开(公告)日：2008-11-20

    申请号：US11803783

    申请日：2007-05-16

    申请人： Chen-Shien Chen ,  Chen-Cheng Kuo ,  Kai-Ming Ching ,  Chih-Hua Chen

    发明人： Chen-Shien Chen ,  Chen-Cheng Kuo ,  Kai-Ming Ching ,  Chih-Hua Chen

    IPC分类号： H01L23/52

    CPC分类号： H01L21/76898 ,  H01L23/481 ,  H01L2924/0002 ,  H01L2924/00

    摘要： An integrated circuit structure includes a substrate; a through-silicon via (TSV) in the substrate, the TSV being tapered; a hard mask region extending from a top surface of the substrate into the substrate, wherein the hard mask encircles a top portion of the TSV; dielectric layers over the substrate; and a metal post extending from a top surface of the dielectric layers to the TSV, wherein the metal post comprises same materials as the TSV.

    摘要翻译： 集成电路结构包括：基板; 在衬底中的穿硅通孔（TSV），TSV是锥形的; 从所述基板的顶表面延伸到所述基板中的硬掩模区域，其中所述硬掩模围绕所述TSV的顶部; 衬底上的介电层; 以及从电介质层的顶表面延伸到TSV的金属柱，其中金属柱包括与TSV相同的材料。

    Multi-direction design for bump pad structures
    9.
    发明授权
    Multi-direction design for bump pad structures 有权
    凸块结构的多方向设计

    公开(公告)号：US08546941B2

    公开(公告)日：2013-10-01

    申请号：US12700004

    申请日：2010-02-04

    申请人： Chih-Hua Chen ,  Chen-Shien Chen ,  Chen-Cheng Kuo ,  Tzuan-Horng Liu

    发明人： Chih-Hua Chen ,  Chen-Shien Chen ,  Chen-Cheng Kuo ,  Tzuan-Horng Liu

    IPC分类号： H01L23/48

    CPC分类号： H01L24/11 ,  H01L23/485 ,  H01L23/498 ,  H01L23/49811 ,  H01L24/27 ,  H01L2224/05552 ,  H01L2924/14 ,  H01L2924/35121 ,  H01L2924/365 ,  H01L2924/00012 ,  H01L2924/00

    摘要： An integrated circuit structure includes a semiconductor chip having a first region and a second region; a dielectric layer formed on the first region and the second region of the semiconductor chip; a first elongated under-bump metallization (UBM) connector formed in the dielectric layer and on the first region of the semiconductor chip and having a first longer axis extending in a first direction; and a second elongated UBM connector formed in the dielectric layer on the second region of the semiconductor chip and having a second longer axis extending in a second direction. The first direction is different from the second direction.

    摘要翻译： 集成电路结构包括具有第一区域和第二区域的半导体芯片; 形成在半导体芯片的第一区域和第二区域上的电介质层; 形成在所述电介质层中且在所述半导体芯片的所述第一区域上并且具有沿第一方向延伸的第一长轴的第一细长凹凸金属化（UBM）连接器; 以及形成在所述半导体芯片的所述第二区域上的所述电介质层中并具有在第二方向上延伸的第二长轴的第二细长UBM连接器。 第一个方向与第二个方向不同。