公开(公告)号：US08178970B2

公开(公告)日：2012-05-15

申请号：US12623925

申请日：2009-11-23

申请人： Wen-Wei Shen ,  Chen-Shien Chen ,  Chen-Cheng Kuo ,  Chih-Hua Chen ,  Ching-Wen Hsiao

发明人： Wen-Wei Shen ,  Chen-Shien Chen ,  Chen-Cheng Kuo ,  Chih-Hua Chen ,  Ching-Wen Hsiao

IPC分类号： H01L23/488

CPC分类号： H01L24/16 ,  H01L24/13 ,  H01L24/81 ,  H01L2224/13005 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/16 ,  H01L2224/16237 ,  H01L2224/81191 ,  H01L2224/812 ,  H01L2224/814 ,  H01L2224/81801 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/10329 ,  H01L2924/10336 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/381 ,  H01L2924/00014 ,  H01L2924/01083 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2924/206 ,  H01L2924/207

摘要： A flip-chip packaging assembly and integrated circuit device are disclosed. An exemplary flip-chip packaging assembly includes a first substrate; a second substrate; and joint structures disposed between the first substrate and the second substrate. Each joint structure comprises an interconnect post between the first substrate and the second substrate and a joint solder between the interconnect post and the second substrate, wherein the interconnect post exhibits a width and a first height. A pitch defines a distance between each joint structure. The first height is less than half the pitch.

摘要翻译： 公开了一种倒装芯片封装组件和集成电路器件。 示例性的倒装芯片封装组件包括第一基板; 第二基板; 以及设置在第一基板和第二基板之间的接合结构。 每个接头结构包括在第一基板和第二基板之间的互连柱和在互连柱和第二基板之间的接合焊料，其中互连柱呈现宽度和第一高度。 间距定义每个关节结构之间的距离。 第一高度小于音高的一半。

公开(公告)号：US20110068465A1

公开(公告)日：2011-03-24

申请号：US12623925

申请日：2009-11-23

申请人： Wen-Wei Shen ,  Chen-Shien Chen ,  Chen-Cheng Kuo ,  Chih-Hua Chen ,  Ching-Wen Hsiao

发明人： Wen-Wei Shen ,  Chen-Shien Chen ,  Chen-Cheng Kuo ,  Chih-Hua Chen ,  Ching-Wen Hsiao

IPC分类号： H01L23/488

CPC分类号： H01L24/16 ,  H01L24/13 ,  H01L24/81 ,  H01L2224/13005 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/16 ,  H01L2224/16237 ,  H01L2224/81191 ,  H01L2224/812 ,  H01L2224/814 ,  H01L2224/81801 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/10329 ,  H01L2924/10336 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/381 ,  H01L2924/00014 ,  H01L2924/01083 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2924/206 ,  H01L2924/207

摘要： A flip-chip packaging assembly and integrated circuit device are disclosed. An exemplary flip-chip packaging assembly includes a first substrate; a second substrate; and joint structures disposed between the first substrate and the second substrate. Each joint structure comprises an interconnect post between the first substrate and the second substrate and a joint solder between the interconnect post and the second substrate, wherein the interconnect post exhibits a width and a first height. A pitch defines a distance between each joint structure. The first height is less than half the pitch.

摘要翻译： 公开了一种倒装芯片封装组件和集成电路器件。 示例性的倒装芯片封装组件包括第一基板; 第二基板; 以及设置在第一基板和第二基板之间的接合结构。 每个接头结构包括在第一基板和第二基板之间的互连柱和在互连柱和第二基板之间的接合焊料，其中互连柱呈现宽度和第一高度。 间距定义每个关节结构之间的距离。 第一高度小于音高的一半。

公开(公告)号：US20130056872A1

公开(公告)日：2013-03-07

申请号：US13225113

申请日：2011-09-02

申请人： Hao-Juin Liu ,  Chita Chuang ,  Ching-Wen Hsiao ,  Chen-Shien Chen ,  Chen-Cheng Kuo ,  Chih-Hua Chen

发明人： Hao-Juin Liu ,  Chita Chuang ,  Ching-Wen Hsiao ,  Chen-Shien Chen ,  Chen-Cheng Kuo ,  Chih-Hua Chen

IPC分类号： H01L23/48 ,  H01L21/66

CPC分类号： H01L22/20 ,  H01L22/14 ,  H01L23/3128 ,  H01L23/48 ,  H01L24/97 ,  H01L25/105 ,  H01L25/50 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/97 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2224/81 ,  H01L2924/00012 ,  H01L2924/00

摘要： A method includes placing a plurality of bottom units onto a jig, wherein the plurality of bottom units is not sawed apart and forms an integrated component. Each of the plurality of bottom units includes a package substrate and a die bonded to the package substrate. A plurality of upper component stacks is placed onto the plurality of bottom units, wherein solder balls are located between the plurality of upper component and the plurality of bottom units. A reflow is performed to join the plurality of upper component stacks with respective ones of the plurality of bottom units through the solder balls.

摘要翻译： 一种方法包括将多个底部单元放置在夹具上，其中多个底部单元没有锯切并形成一个集成部件。 多个底部单元中的每一个包括封装基板和结合到封装基板的管芯。 多个上部组件堆放在多个底部单元上，其中焊球位于多个上部组件和多个底部单元之间。 执行回流以通过焊球将多个上部部件堆叠与多个底部单元中的相应的底部单元接合。

公开(公告)号：US08765497B2

公开(公告)日：2014-07-01

申请号：US13225113

申请日：2011-09-02

申请人： Hao-Juin Liu ,  Chita Chuang ,  Ching-Wen Hsiao ,  Chen-Shien Chen ,  Chen-Cheng Kuo ,  Chih-Hua Chen

发明人： Hao-Juin Liu ,  Chita Chuang ,  Ching-Wen Hsiao ,  Chen-Shien Chen ,  Chen-Cheng Kuo ,  Chih-Hua Chen

IPC分类号： H01L21/66 ,  H01L23/00 ,  H01L23/48

CPC分类号： H01L22/20 ,  H01L22/14 ,  H01L23/3128 ,  H01L23/48 ,  H01L24/97 ,  H01L25/105 ,  H01L25/50 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/97 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2224/81 ,  H01L2924/00012 ,  H01L2924/00

摘要： A method includes placing a plurality of bottom units onto a jig, wherein the plurality of bottom units is not sawed apart and forms an integrated component. Each of the plurality of bottom units includes a package substrate and a die bonded to the package substrate. A plurality of upper component stacks is placed onto the plurality of bottom units, wherein solder balls are located between the plurality of upper component and the plurality of bottom units. A reflow is performed to join the plurality of upper component stacks with respective ones of the plurality of bottom units through the solder balls.

摘要翻译： 一种方法包括将多个底部单元放置在夹具上，其中多个底部单元没有锯切并形成一个集成部件。 多个底部单元中的每一个包括封装基板和结合到封装基板的管芯。 多个上部组件堆放在多个底部单元上，其中焊球位于多个上部组件和多个底部单元之间。 执行回流以通过焊球将多个上部部件堆叠与多个底部单元中的相应的底部单元接合。

公开(公告)号：US09679836B2

公开(公告)日：2017-06-13

申请号：US13298102

申请日：2011-11-16

申请人： Ching-Wen Hsiao ,  Ming-Da Cheng ,  Chih-Wei Lin ,  Chen-Shien Chen ,  Chih-Hua Chen ,  Chen-Cheng Kuo

发明人： Ching-Wen Hsiao ,  Ming-Da Cheng ,  Chih-Wei Lin ,  Chen-Shien Chen ,  Chih-Hua Chen ,  Chen-Cheng Kuo

IPC分类号： H01L23/48 ,  H01L23/498 ,  H01L21/683 ,  H01L25/10 ,  H01L23/31 ,  H01L23/00

CPC分类号： H01L23/49816 ,  H01L21/6835 ,  H01L23/3128 ,  H01L23/49822 ,  H01L24/16 ,  H01L25/105 ,  H01L2221/68318 ,  H01L2221/68345 ,  H01L2221/68381 ,  H01L2224/131 ,  H01L2224/16225 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/12042 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/18161 ,  H01L2924/014 ,  H01L2924/00

摘要： A device includes a redistribution line, and a polymer region molded over the redistribution line. The polymer region includes a first flat top surface. A solder region is disposed in the polymer region and electrically coupled to the redistribution line. The solder region includes a second flat top surface not higher than the first flat top surface.

公开(公告)号：US20130119539A1

公开(公告)日：2013-05-16

申请号：US13298102

申请日：2011-11-16

申请人： Ching-Wen Hsiao ,  Ming-Da Cheng ,  Chih-Wei Lin ,  Chen-Shien Chen ,  Chih-Hua Chen ,  Chen-Cheng Kuo

发明人： Ching-Wen Hsiao ,  Ming-Da Cheng ,  Chih-Wei Lin ,  Chen-Shien Chen ,  Chih-Hua Chen ,  Chen-Cheng Kuo

IPC分类号： H05K1/11 ,  H01L21/60 ,  H01L23/485

CPC分类号： H01L23/49816 ,  H01L21/6835 ,  H01L23/3128 ,  H01L23/49822 ,  H01L24/16 ,  H01L25/105 ,  H01L2221/68318 ,  H01L2221/68345 ,  H01L2221/68381 ,  H01L2224/131 ,  H01L2224/16225 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/12042 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/18161 ,  H01L2924/014 ,  H01L2924/00

摘要： A device includes a redistribution line, and a polymer region molded over the redistribution line. The polymer region includes a first flat top surface. A solder region is disposed in the polymer region and electrically coupled to the redistribution line. The solder region includes a second flat top surface not higher than the first flat top surface.

摘要翻译： 一种装置包括再分布线，以及在再分配线上模制的聚合物区域。 聚合物区域包括第一平坦顶表面。 焊料区域设置在聚合物区域中并电耦合到再分配线路。 焊料区域包括不高于第一平坦顶表面的第二平坦顶表面。

公开(公告)号：US20110227216A1

公开(公告)日：2011-09-22

申请号：US12725322

申请日：2010-03-16

申请人： Ming-Hung Tseng ,  Chen-Shien Chen ,  Chen-Cheng Kuo ,  Chih-Hua Chen ,  Ching-Wen Hsiao

发明人： Ming-Hung Tseng ,  Chen-Shien Chen ,  Chen-Cheng Kuo ,  Chih-Hua Chen ,  Ching-Wen Hsiao

IPC分类号： H01L23/498 ,  H01L21/60

CPC分类号： H01L24/11 ,  H01L24/05 ,  H01L24/13 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05022 ,  H01L2224/05083 ,  H01L2224/05184 ,  H01L2224/05541 ,  H01L2224/05572 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05647 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/13022 ,  H01L2224/1308 ,  H01L2224/13083 ,  H01L2224/13111 ,  H01L2224/13116 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13169 ,  H01L2224/45144 ,  H01L2224/48624 ,  H01L2224/48639 ,  H01L2224/48647 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01084 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2224/05005

摘要： An under-bump metallization (UBM) structure for a semiconductor device is provided. A passivation layer is formed over a contact pad such that at least a portion of the contact pad is exposed. A protective layer, such as a polyimide layer, may be formed over the passivation layer. The UBM structure, such as a conductive pillar, is formed over the underlying contact pad such that the underlying contact pad extends laterally past the UBM structure by a distance large enough to prevent or reduce cracking of the passivation layer and or protective layer.

摘要翻译： 提供了一种用于半导体器件的凸块下金属化（UBM）结构。 钝化层形成在接触焊盘上，使得接触焊盘的至少一部分被暴露。 可以在钝化层上方形成保护层，例如聚酰亚胺层。 诸如导电柱的UBM结构形成在下面的接触焊盘之上，使得下面的接触焊盘横向延伸越过UBM结构一个足够大的距离，以防止或减少钝化层和/或保护层的破裂。

公开(公告)号：US07969013B2

公开(公告)日：2011-06-28

申请号：US12791978

申请日：2010-06-02

申请人： Chih-Hua Chen ,  Chen-Shien Chen ,  Chen-Cheng Kuo ,  Wen-Wei Shen

发明人： Chih-Hua Chen ,  Chen-Shien Chen ,  Chen-Cheng Kuo ,  Wen-Wei Shen

IPC分类号： H01L23/48

CPC分类号： H01L21/76898 ,  H01L23/481 ,  H01L2924/0002 ,  H01L2924/00

摘要： A through silicon via structure includes a top pad and a vertical conductive post that is connected to the top pad. The top pad covers a wider area than the cross section of the vertical conductive post. An interconnect pad is formed at least partially below the top pad. An under layer is also formed at least partially below the top pad. At least one dummy structure connects the top pad and the under layer to fasten the top pad and the interconnect pad.

摘要翻译： 透硅通孔结构包括顶焊盘和连接到顶焊盘的垂直导电柱。 顶部焊盘覆盖比垂直导电柱的横截面更宽的区域。 互连焊盘至少部分地形成在顶部焊盘的下方。 底层也至少部分地形成在顶垫的下方。 至少一个虚拟结构连接顶部焊盘和下层以紧固顶部焊盘和互连焊盘。

公开(公告)号：US08202800B2

公开(公告)日：2012-06-19

申请号：US13112347

申请日：2011-05-20

申请人： Chih-Hua Chen ,  Chen-Shien Chen ,  Chen-Cheng Kuo ,  Wen-Wei Shen

发明人： Chih-Hua Chen ,  Chen-Shien Chen ,  Chen-Cheng Kuo ,  Wen-Wei Shen

IPC分类号： H01L21/44

CPC分类号： H01L21/76898 ,  H01L23/481 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of forming a through silicon via (TSV) structure includes forming an interconnect pad over a substrate. An under layer is formed over the interconnect pad. A vertical conductive post is formed at least partially through the substrate. At least one dummy structure is formed at least partially through the under layer. A top pad is formed over the dummy structure and the vertical conductive post. The top pad covers a wider area than a cross section of the vertical conductive post. The interconnect pad is electrically connected to the top pad. The dummy structure connects the top pad and the under layer thereby fastening the top pad and the interconnect pad.

摘要翻译： 形成贯穿硅通孔（TSV）结构的方法包括在衬底上形成互连焊盘。 在互连焊盘上形成下层。 至少部分地穿过衬底形成垂直导电柱。 至少部分地通过底层形成至少一个虚拟结构。 顶部衬垫形成在虚拟结构和垂直导电柱上。 顶部焊盘覆盖比垂直导电柱的横截面更宽的区域。 互连焊盘电连接到顶部焊盘。 虚拟结构连接顶部焊盘和下层，从而紧固顶部焊盘和互连焊盘。

公开(公告)号：US08653648B2

公开(公告)日：2014-02-18

申请号：US12245505

申请日：2008-10-03

申请人： Chih-Hua Chen ,  Chen-Shien Chen ,  Chen-Cheng Kuo ,  Wen-Wei Shen

发明人： Chih-Hua Chen ,  Chen-Shien Chen ,  Chen-Cheng Kuo ,  Wen-Wei Shen

IPC分类号： H01L23/04

CPC分类号： H01L23/5283 ,  H01L21/6835 ,  H01L21/76816 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/525 ,  H01L2221/68372 ,  H01L2224/0231 ,  H01L2224/02311 ,  H01L2224/02351 ,  H01L2224/05556 ,  H01L2924/01019 ,  H01L2924/19041

摘要： A system and method for forming a TSV contact is presented. A preferred embodiment includes a TSV in contact with a portion of the uppermost metal layer of a semiconductor die. The interface between the TSV conductor and the contact pad is preferably characterized by a non-planar zigzag pattern that forms a grid pattern of contacts. Alternatively, the contacts may form a plurality of metal lines that make contact with the contact pad.

摘要翻译： 提出了一种用于形成TSV触点的系统和方法。 优选实施例包括与半导体管芯的最上层金属层的一部分接触的TSV。 TSV导体和接触垫之间的界面优选地特征在于形成接触的网格图案的非平面之字形图案。 或者，触点可以形成与接触垫接触的多个金属线。