公开(公告)号：US08901677B2

公开(公告)日：2014-12-02

申请号：US14198480

申请日：2014-03-05

Applicant: Intermolecular, Inc.

Inventor： Frank Greer ,  Edwin Adhiprakasha ,  Chi-I Lang ,  Ratsamee Limdulpaiboon ,  Sandip Niyogi ,  Kurt Pang ,  J. Watanabe

IPC: H01L21/336 ,  H01L21/311 ,  H01L29/02

CPC classification number: H01L21/31122 ,  H01L21/02052 ,  H01L21/02236 ,  H01L21/02255 ,  H01L21/02301 ,  H01L21/02304 ,  H01L21/02312 ,  H01L21/02315 ,  H01L21/28255 ,  H01L29/02

Abstract: A germanium-containing semiconductor surface is prepared for formation of a dielectric overlayer (e.g., a thin layer of high-k gate dielectric) by (1) removal of native oxide, for example by wet cleaning, (2) additional cleaning with hydrogen species, (3) in-situ formation of a controlled monolayer of GeO2, and (4) in-situ deposition of the dielectric overlayer to prevent uncontrolled regrowth of native oxide. The monolayer of GeO2 promotes uniform nucleation of the dielectric overlayer, but it too thin to appreciably impact the effective oxide thickness of the dielectric overlayer.

Abstract translation: 制备含锗的半导体表面，用于通过（1）去除天然氧化物，例如通过湿法清洁来形成电介质覆盖层（例如，高k栅极电介质的薄层），（2）用氢物质进行额外的清洁 ，（3）原位形成受控单层的GeO 2，以及（4）电介质覆层的原位沉积，以防止天然氧化物的不受控制的再生长。 GeO2的单层促进电介质覆盖层的均匀成核，但它太薄而不能明显影响电介质覆盖层的有效氧化物厚度。

公开(公告)号：US20140273493A1

公开(公告)日：2014-09-18

申请号：US14031975

申请日：2013-09-19

Applicant: Intermolecular, Inc.

Inventor： Ratsamee Limdulpaiboon ,  Chi-I Lang ,  Sandip Niyogi ,  J. Watanabe

IPC: H01L21/3065

CPC classification number: H01L21/76864 ,  H01L21/02005 ,  H01L21/02104 ,  H01L21/02172 ,  H01L21/02175 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/02205 ,  H01L21/0228 ,  H01L21/283 ,  H01L21/28575 ,  H01L21/3065 ,  H01L22/12 ,  H01L22/14 ,  H01L27/1462 ,  H01L27/14643 ,  H01L27/14698 ,  H01L29/1606 ,  H01L29/41 ,  H01L29/66477 ,  H01L29/66742 ,  H01L29/778 ,  H01L29/786

Abstract: Methods and apparatus for processing using a remote plasma source are disclosed. The apparatus includes an outer chamber enclosing a substrate support, a remote plasma source, and a showerhead. A substrate heater can be mounted in the substrate support. A transport system moves the substrate support and is capable of positioning the substrate. The plasma system may be used to generate activated hydrogen species. The activated hydrogen species can be used to etch/clean semiconductor oxide surfaces such as silicon oxide or germanium oxide.

Abstract translation: 公开了使用远程等离子体源的处理方法和装置。 该装置包括封闭衬底支撑件，远程等离子体源和喷头的外室。 基板加热器可以安装在基板支撑件中。 运输系统移动基板支撑件并且能够定位基板。 等离子体系统可用于产生活性氢物质。 活化的氢物质可用于蚀刻/清洁半导体氧化物表面，例如氧化硅或氧化锗。

公开(公告)号：US20140183161A1

公开(公告)日：2014-07-03

申请号：US13729407

申请日：2012-12-28

Applicant: INTERMOLECULAR, INC.

Inventor： Sandip Niyogi ,  James Tsung ,  J. Watanabe

IPC: C23F1/08 ,  C23F1/00

CPC classification number: B01J19/0046 ,  B01J2219/00427 ,  B01J2219/0043 ,  B01J2219/00443 ,  B01J2219/00536 ,  B01J2219/00596 ,  B01J2219/00745 ,  C23C16/042 ,  C23C16/50

Abstract: Embodiments provided herein describe methods and systems for processing substrates. A substrate processing tool includes a housing having a sidewall and a lid. The housing defines a processing chamber. A substrate support is configured to support a substrate within the processing chamber. A plasma generation source is coupled to the housing and in fluid communication with the processing chamber through the lid of the housing. The plasma generation source is configured to provide a plasma activated species into the processing chamber. A mask is positioned within the processing chamber to at least partially shield the substrate from the plasma activated species. The mask includes a plurality of openings configured such that when the mask is in first and second positions, the plasma activated species passes through a respective first and second of the plurality of openings and causes first and second regions on the substrate to be processed.

Abstract translation: 本文提供的实施例描述了用于处理衬底的方法和系统。 基板处理工具包括具有侧壁和盖的壳体。 壳体限定处理室。 衬底支撑件构造成支撑处理室内的衬底。 等离子体产生源通过壳体的盖连接到壳体并与处理室流体连通。 等离子体产生源被配置成将等离子体活化物质提供到处理室中。 掩模位于处理室内以至少部分地将衬底与等离子体活化物质屏蔽。 掩模包括多个开口，其被构造成使得当掩模处于第一和第二位置时，等离子体活化物质通过多个开口中相应的第一和第二开口，并且使基板上的第一和第二区域被处理。

公开(公告)号：US09245793B2

公开(公告)日：2016-01-26

申请号：US14135182

申请日：2013-12-19

Applicant: Intermolecular, Inc.

Inventor： Ratsamee Limdulpaiboon ,  Frank Greer ,  Chi-I Lang ,  J. Watanabe ,  Wenxian Zhu

IPC: H01L21/31 ,  H01L21/768 ,  H01L21/3105 ,  H01J37/32

CPC classification number: H01L21/76841 ,  H01J37/32357 ,  H01J37/32449 ,  H01L21/3105 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76843

Abstract: Methods and apparatus for processing using a remote plasma source are disclosed. The apparatus includes an outer chamber enclosing a substrate support, a remote plasma source, and a showerhead. A substrate heater can be mounted in the substrate support. A transport system moves the substrate support and is capable of positioning the substrate. The plasma system may be used to generate activated species. The activated species can be used to treat the surfaces of low-k and/or ultra low-k dielectric materials to facilitate improved deposition of diffusion barrier materials.

Abstract translation: 公开了使用远程等离子体源的处理方法和装置。 该装置包括封闭衬底支撑件，远程等离子体源和喷头的外室。 基板加热器可以安装在基板支撑件中。 运输系统移动基板支撑件并且能够定位基板。 等离子体系统可用于产生活化物质。 活化物质可用于处理低k和/或超低k介电材料的表面，以促进扩散阻挡材料的改进沉积。

公开(公告)号：US20150179509A1

公开(公告)日：2015-06-25

申请号：US14135182

申请日：2013-12-19

Applicant: Intermolecular, Inc.

Inventor： Ratsamee Limdulpaiboon ,  Frank Greer ,  Chi-I Lang ,  J. Watanabe ,  Wenxian Zhu

IPC: H01L21/768 ,  H01L21/02

CPC classification number: H01L21/76841 ,  H01J37/32357 ,  H01J37/32449 ,  H01L21/3105 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76843

Abstract: Methods and apparatus for processing using a remote plasma source are disclosed. The apparatus includes an outer chamber enclosing a substrate support, a remote plasma source, and a showerhead. A substrate heater can be mounted in the substrate support. A transport system moves the substrate support and is capable of positioning the substrate. The plasma system may be used to generate activated species. The activated species can be used to treat the surfaces of low-k and/or ultra low-k dielectric materials to facilitate improved deposition of diffusion barrier materials.

Abstract translation: 公开了使用远程等离子体源的处理方法和装置。 该装置包括封闭衬底支撑件，远程等离子体源和喷头的外室。 基板加热器可以安装在基板支撑件中。 运输系统移动基板支撑件并且能够定位基板。 等离子体系统可用于产生活化物质。 活化物质可用于处理低k和/或超低k介电材料的表面，以促进扩散阻挡材料的改进沉积。

公开(公告)号：US08987143B2

公开(公告)日：2015-03-24

申请号：US14031975

申请日：2013-09-19

Applicant: Intermolecular, Inc.

Inventor： Ratsamee Limdulpaiboon ,  Chi-I Lang ,  Sandip Niyogi ,  J. Watanabe

IPC: H01L21/302 ,  H01L21/02 ,  H01L29/66 ,  H01L27/146 ,  H01L21/283 ,  H01L29/41 ,  H01L21/3065 ,  H01L29/778 ,  H01L29/16

CPC classification number: H01L21/76864 ,  H01L21/02005 ,  H01L21/02104 ,  H01L21/02172 ,  H01L21/02175 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/02205 ,  H01L21/0228 ,  H01L21/283 ,  H01L21/28575 ,  H01L21/3065 ,  H01L22/12 ,  H01L22/14 ,  H01L27/1462 ,  H01L27/14643 ,  H01L27/14698 ,  H01L29/1606 ,  H01L29/41 ,  H01L29/66477 ,  H01L29/66742 ,  H01L29/778 ,  H01L29/786

Abstract: Methods and apparatus for processing using a remote plasma source are disclosed. The apparatus includes an outer chamber enclosing a substrate support, a remote plasma source, and a showerhead. A substrate heater can be mounted in the substrate support. A transport system moves the substrate support and is capable of positioning the substrate. The plasma system may be used to generate activated hydrogen species. The activated hydrogen species can be used to etch/clean semiconductor oxide surfaces such as silicon oxide or germanium oxide.

Abstract translation: 公开了使用远程等离子体源的处理方法和装置。 该装置包括封闭衬底支撑件，远程等离子体源和喷头的外室。 基板加热器可以安装在基板支撑件中。 运输系统移动基板支撑件并且能够定位基板。 等离子体系统可用于产生活性氢物质。 活化的氢物质可用于蚀刻/清洁半导体氧化物表面，例如氧化硅或氧化锗。

公开(公告)号：US20140273309A1

公开(公告)日：2014-09-18

申请号：US14051287

申请日：2013-10-10

Applicant: Intermolecular, Inc.

Inventor： Sandip Niyogi ,  Sean Barstow ,  Jay Dedontney ,  Chi-I Lang ,  Ratsamee Limdulpaiboon ,  Martin Romero ,  Sunil Shanker ,  James Tsung ,  J. Watanabe

IPC: H01L21/66 ,  H01L21/02

CPC classification number: H01L21/30 ,  B01J19/0046 ,  B01J2219/00283 ,  B01J2219/00286 ,  B01J2219/00301 ,  B01J2219/00313 ,  B01J2219/0038 ,  B01J2219/00382 ,  B01J2219/00416 ,  B01J2219/00418 ,  B01J2219/00527 ,  B01J2219/00585 ,  B08B3/04 ,  C23C14/08 ,  C23C14/22 ,  C23C14/34 ,  C23C18/1619 ,  C23C18/1682 ,  C25D17/02 ,  G11C13/0004 ,  H01L21/02104 ,  H01L21/30604 ,  H01L21/67051 ,  H01L21/67057 ,  H01L21/6719 ,  H01L22/10 ,  H01L22/12 ,  H01L22/14 ,  H01L27/2463 ,  H01L45/1608

Abstract: Remote-plasma treatments of surfaces, for example in semiconductor manufacture, can be improved by preferentially exposing the surface to only a selected subset of the plasma species generated by the plasma source. The probability that a selected species reaches the surface, or that an unselected species is quenched or otherwise converted or diverted before reaching the surface, can be manipulated by introducing additional gases with selected properties either at the plasma source or in the process chamber, varying chamber pressure or flow rate to increase or decrease collisions, or changing the dimensions or geometry of the injection ports, conduits and other passages traversed by the species. Some example processes treat surfaces preferentially with relatively low-energy radicals, vary the concentration of radicals at the surface in real time, or clean and passivate in the same unit process.

Abstract translation: 可以通过优选地将表面暴露于由等离子体源产生的等离子体物质的选定子集中来改善表面的远程等离子体处理，例如在半导体制造中。 所选择的物种到达表面的可能性，或未被选择的物质在到达表面之前被淬灭或以其他方式转化或转移的可能性可以通过在等离子体源或处理室，变化室中引入具有选定性质的附加气体来操纵 压力或流量以增加或减少碰撞，或改变注射口，管道和由物种穿过的其它通道的尺寸或几何形状。 一些示例性过程优先用相对低能量的基团处理表面，实时地改变表面处的自由基的浓度，或者在相同的单元过程中清洁和钝化。

公开(公告)号：US20140264281A1

公开(公告)日：2014-09-18

申请号：US14137183

申请日：2013-12-20

Applicant: Intermolecular, Inc.

Inventor： Sandip Niyogi ,  Sean Barstow ,  Chi-I Lang ,  Ratsamee Limdulpaiboon ,  Dipankar Pramanik ,  J. Watanabe

IPC: H01L29/10 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L21/76864 ,  H01L21/02005 ,  H01L21/02104 ,  H01L21/02172 ,  H01L21/02175 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/02205 ,  H01L21/0228 ,  H01L21/283 ,  H01L21/28575 ,  H01L21/3065 ,  H01L22/12 ,  H01L22/14 ,  H01L27/1462 ,  H01L27/14643 ,  H01L27/14698 ,  H01L29/1606 ,  H01L29/41 ,  H01L29/66477 ,  H01L29/66742 ,  H01L29/778 ,  H01L29/786

Abstract: Semiconductor devices and methods of making thereof are disclosed. A field effect transistor (FET) is provided comprising a substrate, a first layer disposed above the substrate, the first layer being operable as a gate electrode, a second layer disposed above the first layer, the second layer comprising a dielectric material, a third layer disposed above the second layer, the third layer comprising a semiconductor, and a fourth layer comprising one or more conductive materials and operable as source and drain electrodes disposed above the third layer. In some embodiments, the dielectric material comprises a high-κ dielectric. In some embodiments, the source and drain electrodes comprise one or more metals. The source and drain electrodes are each in ohmic contact with an area of the top surface of the third layer, and substantially all of the current through the transistor flows through the ohmic contacts.

Abstract translation: 公开了半导体器件及其制造方法。 提供场效应晶体管（FET），其包括基板，设置在基板上方的第一层，第一层可操作为栅电极，第二层设置在第一层上方，第二层包括电介质材料，第三层 层，其设置在所述第二层上方，所述第三层包括半导体，以及包括一个或多个导电材料并可操作为设置在所述第三层上方的源极和漏极的第四层。 在一些实施例中，电介质材料包括高压 电介质。 在一些实施例中，源电极和漏电极包括一种或多种金属。 源电极和漏电极各自与第三层的顶表面的区域欧姆接触，并且基本上所有通过晶体管的电流都流经欧姆接触。

公开(公告)号：US20140252565A1

公开(公告)日：2014-09-11

申请号：US14198480

申请日：2014-03-05

Applicant: Intermolecular, Inc.

Inventor： Frank Greer ,  Edwin Adhiprakasha ,  Chi-I Lang ,  Ratsamee Limdulpaiboon ,  Sandip Niyogi ,  Kurt Pang ,  J. Watanabe

IPC: H01L21/311 ,  H01L29/02

CPC classification number: H01L21/31122 ,  H01L21/02052 ,  H01L21/02236 ,  H01L21/02255 ,  H01L21/02301 ,  H01L21/02304 ,  H01L21/02312 ,  H01L21/02315 ,  H01L21/28255 ,  H01L29/02

Abstract: A germanium-containing semiconductor surface is prepared for formation of a dielectric overlayer (e.g., a thin layer of high-k gate dielectric) by (1) removal of native oxide, for example by wet cleaning, (2) additional cleaning with hydrogen species, (3) in-situ formation of a controlled monolayer of GeO2, and (4) in-situ deposition of the dielectric overlayer to prevent uncontrolled regrowth of native oxide. The monolayer of GeO2 promotes uniform nucleation of the dielectric overlayer, but it too thin to appreciably impact the effective oxide thickness of the dielectric overlayer.

Abstract translation: 制备含锗的半导体表面，用于通过（1）去除天然氧化物，例如通过湿法清洁来形成电介质覆盖层（例如，高k栅极电介质的薄层），（2）用氢物质进行额外的清洁 ，（3）原位形成受控单层的GeO 2，以及（4）电介质覆层的原位沉积，以防止天然氧化物的不受控制的再生长。 GeO2的单层促进电介质覆盖层的均匀成核，但它太薄而不能明显影响电介质覆盖层的有效氧化物厚度。

公开(公告)号：US20140134849A1

公开(公告)日：2014-05-15

申请号：US13672840

申请日：2012-11-09

Applicant: INTERMOLECULAR INC.

Inventor： Sandip Niyogi ,  Owen Ho Yin Fong ,  Sunil Shanker ,  ShouQian Shao ,  Jingang Su ,  J. Watanabe ,  Wenxian Zhu

IPC: C23C16/458 ,  H01L21/02

CPC classification number: C23C16/04 ,  C23C16/4584

Abstract: An apparatus that includes a base, a sidewall extending from the base, and a lid disposed over a top of the sidewall is provided. A plasma generating source extends through a surface of the lid. A rotatable substrate support is disposed within the chamber above a surface of the base, the rotatable substrate support operable to vertically translate from the base to the lid. A first fluid inlet extends into a first surface of the sidewall and a second fluid inlet extends into a second surface of the sidewall. The plasma generating source provides a plasma activated species to a region of a surface of a substrate supported on the rotatable substrate support and a fluid delivered proximate to the region from one of the first or the second fluid inlet interacts with the plasma activated species to deposit a layer of material over the region.

Abstract translation: 提供一种装置，其包括基座，从基座延伸的侧壁和设置在侧壁顶部上的盖。 等离子体产生源延伸穿过盖的表面。 可旋转的基板支撑件设置在基座的表面之上的腔室内，可旋转的基底支撑件可操作以从基座垂直平移到盖子。 第一流体入口延伸到侧壁的第一表面中，并且第二流体入口延伸到侧壁的第二表面中。 等离子体产生源将等离子体激活的物质提供到支撑在可旋转基底支撑件上的基底的表面的区域，并且靠近该区域的流体从第一或第二流体入口中的一个流体与等离子体活化物质相互作用而沉积 在该地区的一层材料。