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    CHARACTERIZING AN ELECTRON BEAM TREATMENT APPARATUS
    1.
    发明申请
    CHARACTERIZING AN ELECTRON BEAM TREATMENT APPARATUS 失效
    表征电子束处理设备

    公开(公告)号：US20050184257A1

    公开(公告)日：2005-08-25

    申请号：US10784315

    申请日：2004-02-20

    申请人： Khaled Elsheref ,  Alexandros Demos ,  Hichem M'saad

    发明人： Khaled Elsheref ,  Alexandros Demos ,  Hichem M'saad

    IPC分类号： H01J37/304

    CPC分类号： H01J37/077 ,  H01J37/304 ,  H01J2237/06366 ,  H01J2237/30433

    摘要： One embodiment of the present invention is a method for characterizing an electron beam treatment apparatus that includes: (a) e-beam treating one or more of a predetermined type of wafer or substrate utilizing one or more sets of electron beam treatment parameters; (b) making post-electron beam treatment measurements of intensity of a probe beam reflected from the surface of the one or more wafers in which thermal and/or plasma waves have been induced; and (c) developing data from the post-electron beam treatment measurements that provide insight into performance of the electron beam treatment apparatus.

    摘要翻译： 本发明的一个实施例是一种用于表征电子束处理装置的方法，其包括：（a）利用一组或多组电子束处理参数电子束处理预定类型的晶片或衬底中的一种或多种; （b）进行电子束处理测量从已经引起热和/或等离子体波的一个或多个晶片的表面反射的探针光束的强度; 和（c）从后期电子束处理测量中开发数据，其提供对电子束处理设备的性能的洞察。

    VACUUM REACTION CHAMBER WITH X-LAMP HEATER
    2.
    发明申请
    VACUUM REACTION CHAMBER WITH X-LAMP HEATER 审中-公开
    真空反应室与X灯加热器

    公开(公告)号：US20060289795A1

    公开(公告)日：2006-12-28

    申请号：US11383383

    申请日：2006-05-15

    申请人： Dale Dubois ,  Juan Rocha-Alvarez ,  Amir Al-Bayati ,  Khaled Elsheref ,  Alexandros Demos ,  Lester D'Cruz ,  Hichem M'Saad ,  Ashish Shah ,  Takashi Shimizu ,  Naoyuki Iwasaki

    发明人： Dale Dubois ,  Juan Rocha-Alvarez ,  Amir Al-Bayati ,  Khaled Elsheref ,  Alexandros Demos ,  Lester D'Cruz ,  Hichem M'Saad ,  Ashish Shah ,  Takashi Shimizu ,  Naoyuki Iwasaki

    IPC分类号： G21G5/00

    CPC分类号： H01J37/317 ,  H01J2237/2001

    摘要： Methods and apparatus for electron beam treatment of a substrate are provided. An electron beam apparatus that includes a vacuum chamber, at least one thermocouple assembly in communication with the vacuum chamber; and a heating device in communication with the vacuum chamber and combinations thereof are provided. In one embodiment, the vacuum chamber comprises a cathode, an anode, and a substrate support. In another embodiment, the vacuum chamber comprises a grid located between the anode and the substrate support. In one embodiment the heating device comprises a first parallel light array and a second light array positioned such that the first parallel light array and the second light array intersect. In one embodiment the thermocouple assembly comprises a temperature sensor made of aluminum nitride.

    摘要翻译： 提供了用于基板的电子束处理的方法和装置。 一种电子束装置，包括真空室，与真空室连通的至少一个热电偶组件; 并且提供与真空室连通的加热装置及其组合。 在一个实施例中，真空室包括阴极，阳极和衬底支撑件。 在另一个实施例中，真空室包括位于阳极和基板支撑件之间的格栅。 在一个实施例中，加热装置包括第一平行光阵列和第二光阵列，其定位成使得第一平行光阵列和第二光阵列相交。 在一个实施例中，热电偶组件包括由氮化铝制成的温度传感器。

    Method and apparatus for reducing charge density on a dielectric coated substrate after exposure to a large area electron beam
    3.
    发明申请
    Method and apparatus for reducing charge density on a dielectric coated substrate after exposure to a large area electron beam 失效
    用于在暴露于大面积电子束之后降低电介质涂覆的基底上的电荷密度的方法和装置

    公开(公告)号：US20060192150A1

    公开(公告)日：2006-08-31

    申请号：US11414649

    申请日：2006-04-27

    申请人： Alexandros Demos ,  Khaled Elsheref ,  Yuri Trachuk ,  Tom Cho ,  Girish Dixit ,  Hichem M'Saad ,  Derek Witty

    发明人： Alexandros Demos ,  Khaled Elsheref ,  Yuri Trachuk ,  Tom Cho ,  Girish Dixit ,  Hichem M'Saad ,  Derek Witty

    IPC分类号： G21K5/10 ,  H01J37/08

    CPC分类号： H01J37/317 ,  H01J2237/0041

    摘要： Embodiments in accordance with the present invention relate to a number of techniques, which may be applied alone or in combination, to reduce charge damage of substrates exposed to electron beam radiation. In one embodiment, charge damage is reduced by establishing a robust electrical connection between the exposed substrate and ground. In another embodiment, charge damage is reduced by modifying the sequence of steps for activating and deactivating the electron beam source to reduce the accumulation of charge on the substrate. In still another embodiment, a plasma is struck in the chamber containing the e-beam treated substrate, thereby removing accumulated charge from the substrate. In a further embodiment of the present invention, the voltage of the anode of the e-beam source is reduced in magnitude to account for differences in electron conversion efficiency exhibited by different cathode materials.

    摘要翻译： 根据本发明的实施例涉及可以单独或组合应用的多种技术，以减少暴露于电子束辐射的衬底的电荷损伤。 在一个实施例中，通过在暴露的基板和地之间建立牢固的电连接来减小电荷损伤。 在另一个实施例中，通过修改用于激活和去激活电子束源的步骤顺序来减少电荷损伤，以减少电荷在衬底上的累积。 在另一个实施例中，在包含电子束处理的衬底的室中撞击等离子体，从而从衬底去除积聚的电荷。 在本发明的另一个实施例中，电子束源的阳极的电压的大小被减小以考虑到由不同的阴极材料表现的电子转换效率的差异。

    Method and apparatus for reducing charge density on a dielectric coated substrate after exposure to large area electron beam
    5.
    发明申请
    Method and apparatus for reducing charge density on a dielectric coated substrate after exposure to large area electron beam 审中-公开
    用于在暴露于大面积电子束之后降低电介质涂覆的基底上的电荷密度的方法和装置

    公开(公告)号：US20050224722A1

    公开(公告)日：2005-10-13

    申请号：US11002600

    申请日：2004-12-01

    申请人： Alexandros Demos ,  Khaled Elsheref ,  Yuri Trachuk ,  Tom Cho ,  Girish Dixit ,  Hichem M'Saad ,  Derek Witty

    发明人： Alexandros Demos ,  Khaled Elsheref ,  Yuri Trachuk ,  Tom Cho ,  Girish Dixit ,  Hichem M'Saad ,  Derek Witty

    IPC分类号： H01J37/317

    CPC分类号： H01J37/317 ,  H01J2237/0041

    摘要： Embodiments in accordance with the present invention relate to a number of techniques, which may be applied alone or in combination, to reduce charge damage of substrates exposed to electron beam radiation. In one embodiment, charge damage is reduced by establishing a robust electrical connection between the exposed substrate and ground. In another embodiment, charge damage is reduced by modifying the sequence of steps for activating and deactivating the electron beam source to reduce the accumulation of charge on the substrate. In still another embodiment, a plasma is struck in the chamber containing the e-beam treated substrate, thereby removing accumulated charge from the substrate. In a further embodiment of the present invention, the voltage of the anode of the e-beam source is reduced in magnitude to account for differences in electron conversion efficiency exhibited by different cathode materials.

    摘要翻译： 根据本发明的实施例涉及可以单独或组合应用的多种技术，以减少暴露于电子束辐射的衬底的电荷损伤。 在一个实施例中，通过在暴露的基板和地之间建立牢固的电连接来减小电荷损伤。 在另一个实施例中，通过修改用于激活和去激活电子束源的步骤顺序来减少电荷损伤，以减少电荷在衬底上的累积。 在另一个实施例中，在包含电子束处理的衬底的室中撞击等离子体，从而从衬底去除积聚的电荷。 在本发明的另一个实施例中，电子束源的阳极的电压的大小被减小以考虑到由不同的阴极材料表现的电子转换效率的差异。

    Techniques promoting adhesion of porous low K film to underlying barrier layer
    6.
    发明申请
    Techniques promoting adhesion of porous low K film to underlying barrier layer 有权
    促进多孔低K膜粘附到底层阻挡层的技术

    公开(公告)号：US20050233591A1

    公开(公告)日：2005-10-20

    申请号：US11046090

    申请日：2005-01-28

    申请人： Francimar Schmitt ,  Alexandros Demos ,  Derek Witty ,  Hichem M'Sadd ,  Sang Ahn ,  Lester D'Cruz ,  Khaled Elsheref ,  Zhenjiang Cui

    发明人： Francimar Schmitt ,  Alexandros Demos ,  Derek Witty ,  Hichem M'Sadd ,  Sang Ahn ,  Lester D'Cruz ,  Khaled Elsheref ,  Zhenjiang Cui

    IPC分类号： B44C1/22 ,  C23C16/40 ,  C23C16/56 ,  H01L21/302 ,  H01L21/3105 ,  H01L21/316 ,  H01L21/768

    CPC分类号： H01L21/31633 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02351 ,  H01L21/02362 ,  H01L21/31058 ,  H01L21/31695 ,  H01L21/76801 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/7682 ,  H01L21/76825 ,  H01L21/76828 ,  H01L21/76832 ,  H01L2221/1047

    摘要： Adhesion of a porous low K film to an underlying barrier layer is improved by forming an intermediate layer lower in carbon content, and richer in silicon oxide, than the overlying porous low K film. This adhesion layer can be formed utilizing one of a number of techniques, alone or in combination. In one approach, the adhesion layer can be formed by introduction of a rich oxidizing gas such as O2/CO2/etc. to oxidize Si precursors immediately prior to deposition of the low K material. In another approach, thermally labile chemicals such as alpha-terpinene, cymene, and any other non-oxygen containing organics are removed prior to low K film deposition. In yet another approach, the hardware or processing parameters, such as the manner of introduction of the non-silicon containing component, may be modified to enable formation of an oxide interface prior to low K film deposition. In still another approach, parameters of ebeam treatment such as dosage, energy, or the use of thermal annealing, may be controlled to remove carbon species at the interface between the barrier and the low K film. In a further approach, a pre-treatment plasma may be introduced prior to low k deposition to enhance heating of the barrier interface, such that a thin oxide interface is formed when low K deposition gases are introduced and the low K film is deposited.

    摘要翻译： 通过与上覆的多孔低K膜形成碳含量较低的中间层和富含氧化硅的多孔低K膜与下面的阻挡层的粘附性得到改善。 可以利用单独或组合的多种技术之一形成该粘合层。 在一种方法中，粘合层可以通过引入富氧化气体如O 2 / CO 2/2等形成。 以在沉积低K材料之前立即氧化Si前体。 在另一种方法中，在低K膜沉积之前，除去热不稳定化学品如α-萜品烯，伞花烃和任何其它不含氧的有机物。 在另一种方法中，可以修改硬件或处理参数，例如引入非硅含量组分的方式，以使得能够在低K膜沉积之前形成氧化物界面。 在另一种方法中，可以控制ebeam处理的参数，例如剂量，能量或使用热退火，以去除阻挡层和低K膜之间的界面处的碳物质。 在另一种方法中，可以在低k沉积之前引入预处理等离子体以增强阻挡界面的加热，使得当引入低K沉积气体并沉积低K膜时，形成薄氧化物界面。

    Clean Process for an Electron Beam Source
    7.
    发明申请
    Clean Process for an Electron Beam Source 有权
    电子束源的清洁工艺

    公开(公告)号：US20080041415A1

    公开(公告)日：2008-02-21

    申请号：US11925611

    申请日：2007-10-26

    申请人： Alexandros Demos ,  Khaled Elsherf ,  Josphine Chang ,  Hichem M'saad

    发明人： Alexandros Demos ,  Khaled Elsherf ,  Josphine Chang ,  Hichem M'saad

    IPC分类号： B08B6/00

    CPC分类号： B08B7/0035 ,  B82Y10/00 ,  B82Y40/00 ,  C23C16/4405 ,  C23C16/56 ,  H01J37/3174 ,  Y10S438/905

    摘要： One embodiment of the present invention is a method for cleaning an electron beam treatment apparatus that includes: (a) generating an electron beam that energizes a cleaning gas in a chamber of the electron beam treatment apparatus; (b) monitoring an electron beam current; (c) adjusting a pressure of the cleaning gas to maintain the electron beam current at a substantially constant value; and (d) stopping when a predetermined condition has been reached.

    摘要翻译： 本发明的一个实施例是一种清洗电子束处理装置的方法，其包括：（a）产生电子束，该电子束激励电子束处理装置的腔室中的清洁气体; （b）监测电子束电流; （c）调节清洁气体的压力以将电子束电流保持在基本恒定的值; 和（d）当达到预定条件时停止。

    Methodology for determining electron beam penetration depth
    10.
    发明申请
    Methodology for determining electron beam penetration depth 失效
    确定电子束穿透深度的方法

    公开(公告)号：US20060027764A1

    公开(公告)日：2006-02-09

    申请号：US11006305

    申请日：2004-12-06

    申请人： Josephine Liu ,  Alexandros Demos ,  Hichem M'Saad

    发明人： Josephine Liu ,  Alexandros Demos ,  Hichem M'Saad

    IPC分类号： G21K5/10

    CPC分类号： H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/32935

    摘要： The Grunn equation: Depth = 0.046 ⁢   ⁢ ( V acc ) n ρ is modified to accurately predict depth of electron beam penetration into a target material. A two-layer stack is formed comprising a thickness of the target material overlying a detection material exhibiting greater sensitivity to the electron beam than the target material. The target material is exposed to electron beam radiation of different energies, with the threshold energy resulting in a changed physical property of the detection material below a predetermined value marking a penetration depth corresponding to the target material thickness. Utilizing the threshold energy (Vacc), the target material thickness (Depth), and the known target material density (ρ), the numerical power “n” of the Grunn equation is calculated to fit experimental results. So modified, the Grunn equation accurately predicts the depth of penetration of electron beams of varying energies into the target material.

    摘要翻译： Grunn方程式： 深度 = 0.046 （ V acc ） rho 被修改以准确地预测电子束穿透到目标材料中的深度。 形成两层叠层，其包含覆盖在比目标材料更大的对电子束敏感性的检测材料上的目标材料的厚度。 目标材料暴露于不​​同能量的电子束辐射，其中阈值能量导致检测材料的物理性质改变低于标记对应于目标材料厚度的穿透深度的预定值。 利用阈值能量（Vacc），目标材料厚度（Depth）和已知目标材料密度（rho），计算Grunn方程的数值“n”以适应实验结果。 如此修改，Grunn方程准确地预测了不同能量的电子束穿透到目标材料中的深度。