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    Diamond films with heat-resisting ohmic electrodes
    1.
    发明授权
    Diamond films with heat-resisting ohmic electrodes 失效
    具有耐热欧姆电极的金刚石薄膜

    公开(公告)号：US5309000A

    公开(公告)日：1994-05-03

    申请号：US50614

    申请日：1993-04-22

    申请人： Kimitsugu Saito ,  Koji Kobashi ,  Kozo Nishimura ,  Koichi Miyata

    发明人： Kimitsugu Saito ,  Koji Kobashi ,  Kozo Nishimura ,  Koichi Miyata

    IPC分类号： C30B29/04 ,  H01L21/04 ,  H01L21/28 ,  H01L29/16 ,  H01L29/40 ,  H01L29/45 ,  H01L23/48

    CPC分类号： H01L29/1602 ,  H01L21/0415 ,  H01L24/05 ,  H01L29/45 ,  H01L29/66045 ,  H01L2224/04042 ,  H01L2224/48463 ,  H01L2924/14

    摘要： A is a heat-resisting ohmic electrode on diamond film, including: a p-type semiconducting diamond film; a boron-doped diamond layer provided on the semiconducting diamond film; and an electrode element made of p-type Si selectively formed on the boron-doped diamond layer; wherein the boron concentration in the boron-doped diamond layer is from 1.0.times.10.sup.19 to 1.8.times.10.sup.23 cm.sup.-3, and at least one impurity selected from the group consisting of B, Al and Ga is doped in the electrode element with a concentration from 1.0.times.10.sup.20 to 5.0.times.10.sup.22 cm.sup.-3. The ohmic electrode on diamond film is applicable for electronic devices operative at high temperature.

    摘要翻译： A是金刚石膜上的耐热欧姆电极，包括：p型半导体金刚石膜; 设置在半导体金刚石膜上的掺硼金刚石层; 以及选择性地形成在掺杂硼的金刚石层上的由p型Si制成的电极元件; 其中硼掺杂金刚石层中的硼浓度为1.0×1019至1.8×10 23 cm -3，并且在电极元件中掺杂选自B，Al和Ga中的至少一种杂质，浓度为1.0×10 20 至5.0×1022cm-3。 金刚石膜上的欧姆电极适用于在高温下工作的电子器件。

    Plasma reactor for diamond synthesis
    4.
    发明授权
    Plasma reactor for diamond synthesis 失效
    用于金刚石合成的等离子体反应器

    公开(公告)号：US4940015A

    公开(公告)日：1990-07-10

    申请号：US379586

    申请日：1989-07-13

    申请人： Koji Kobashi ,  Kozo Nishimura ,  Koichi Miyata ,  Yoshio Kawate ,  Kazuo Kumagai ,  Norio Suzuki ,  Yutaka Kawata ,  Kiyotaka Ishibashi

    发明人： Koji Kobashi ,  Kozo Nishimura ,  Koichi Miyata ,  Yoshio Kawate ,  Kazuo Kumagai ,  Norio Suzuki ,  Yutaka Kawata ,  Kiyotaka Ishibashi

    IPC分类号： C23C16/26 ,  C23C16/27 ,  C23C16/50 ,  C23C16/511 ,  C30B25/10 ,  C30B29/04 ,  H01J37/32

    CPC分类号： C23C16/274 ,  C23C16/26 ,  C23C16/277 ,  C23C16/511 ,  C30B25/105 ,  H01J37/32192 ,  H01J37/32284 ,  H01J37/32733 ,  H01J2237/339

    摘要： A plasma reactor for diamond synthesis includes a microwave generator, a waveguide connected to the microwave generator, an antenna disposed within the waveguide to direct the microwaves propagated along the waveguide toward the interior of a reaction chamber, a microwave window provided above the upper wall of the waveguide, a reaction chamber defined by (a) a cylindrical bottom member hermetically joined to the microwave window and the waveguide, (b) a reaction gas inlet port and a gas outlet port in the side wall thereof, and (c) a substrate holder disposed within the reaction chamber in facing opposition to the microwave window so as to be moved toward and away from the microwave window to adjust the distance between the microwave window and the substrate holder to generate a desired microwave resonance mode. A plasma is produced only in the central portion of the reaction chamber, so that the etching of the microwave window and the resulting contamination of the diamond film by impurities produced by etching the microwave window are prevented. The plasma reactor for diamond synthesis is capable of forming a high-quality diamond film on a large surface of a substrate at a high growth rate in a range of 1 to 2 .mu.m/hr.

    摘要翻译： 用于金刚石合成的等离子体反应器包括微波发生器，连接到微波发生器的波导，设置在波导内的天线，以将沿波导传播的微波导向反应室的内部，设置在反应室的上壁上方的微波窗口 波导，由（a）气密地接合到微波窗口和波导的圆柱形底部构件限定的反应室，（b）侧壁中的反应气体入口和气体出口，以及（c）基板 保持器设置在与微波窗口相对的反应室内，以便朝向和远离微波窗口移动，以调节微波窗口和衬底保持器之间的距离以产生所需的微波谐振模式。 仅在反应室的中心部分产生等离子体，从而防止了通过蚀刻微波窗口产生的杂质对微波窗口的蚀刻和金刚石膜的污染。 用于金刚石合成的等离子体反应器能够以1至2μm/ hr的高生长速率在基板的大表面上形成高质量的金刚石膜。

    Methods for manufacturing substrates to form monocrystalline diamond films by chemical vapor deposition
    5.
    发明授权
    Methods for manufacturing substrates to form monocrystalline diamond films by chemical vapor deposition 失效
    通过化学气相沉积制造衬底以形成单晶金刚石膜的方法

    公开(公告)号：US5755879A

    公开(公告)日：1998-05-26

    申请号：US560078

    申请日：1995-11-17

    申请人： Yoshihiro Shintani ,  Takeshi Tachibana ,  Kozo Nishimura ,  Koichi Miyata ,  Yoshihiro Yokota ,  Koji Kobashi

    发明人： Yoshihiro Shintani ,  Takeshi Tachibana ,  Kozo Nishimura ,  Koichi Miyata ,  Yoshihiro Yokota ,  Koji Kobashi

    IPC分类号： C30B29/04 ,  C23C16/02 ,  C23C16/27 ,  C30B25/02 ,  H01L31/10 ,  H03H3/08 ,  C30B29/20

    CPC分类号： C23C16/274 ,  C23C16/0209 ,  C23C16/0254 ,  C30B25/02 ,  C30B29/04

    摘要： A method is presented to manufacture substrates for growing monocrystalline diamond films by chemical vapor deposition (CVD) on large area at low cost. The substrate materials are either Pt or its alloys, which have been subject to a single or multiple cycle of cleaning, roller press, and high temperature annealing processes to make the thickness of the substrate materials to 0.5 mm or less, or most preferably to 0.2 mm or less, so that either (111) crystal surfaces or inclined crystal surfaces with angular deviations within .+-.10 degrees from (111), or both, appear on the entire surfaces or at least part of the surfaces of the substrates. The annealing is carried out at a temperature above 800.degree. C. The present invention will make it possible to markedly improve various characteristics of diamond films, and hence put them into practical use.

    摘要翻译： 提出了一种制造用于通过化学气相沉积（CVD）在大面积上以低成本生长单晶金刚石膜的衬底的方法。 衬底材料是Pt或其合金，其已经经历单次或多次清洁循环，辊压机和高温退火工艺，以使衬底材料的厚度为0.5mm或更小，或最优选为0.2 （111）或两者的角度偏差的（111）晶面或倾斜晶体表面出现在基板的整个表面或至少部分表面上。 退火在高于800℃的温度下进行。本发明将可以显着改善金刚石膜的各种特性，从而将其投入实际应用中。

    Diamond Schottky diode with oxygen
    6.
    发明授权
    Diamond Schottky diode with oxygen 失效
    金刚石肖特基二极管与氧气

    公开(公告)号：US5352908A

    公开(公告)日：1994-10-04

    申请号：US145307

    申请日：1993-11-03

    申请人： Koji Kobashi ,  Koichi Miyata ,  Kozo Nishimura

    发明人： Koji Kobashi ,  Koichi Miyata ,  Kozo Nishimura

    IPC分类号： H01L29/16 ,  H01L29/47 ,  H01L29/86 ,  H01L29/872 ,  H01L29/48

    CPC分类号： H01L29/1602 ,  H01L29/872

    摘要： A diamond Schottky diode including an electrically conductive substrate, a multi-layer structure of a semiconducting diamond layer and an insulating diamond layer, and a metal electrode. This diode has a greater potential barrier under a reversed bias and hence exhibits better rectifying characteristics with a smaller reverse current.

    摘要翻译： 包括导电衬底，半导体金刚石层和绝缘金刚石层的多层结构的金刚石肖特基二极管和金属电极。 该二极管在反向偏置下具有更大的势垒，因此具有较小的反向电流的整流特性。

    Methods for manufacturing monocrystalline diamond films
    9.
    发明授权
    Methods for manufacturing monocrystalline diamond films 失效
    制造单晶金刚石薄膜的方法

    公开(公告)号：US5814149A

    公开(公告)日：1998-09-29

    申请号：US560077

    申请日：1995-11-17

    申请人： Yoshihiro Shintani ,  Takeshi Tachibana ,  Kozo Nishimura ,  Koichi Miyata ,  Yoshihiro Yokota ,  Koji Kobashi

    发明人： Yoshihiro Shintani ,  Takeshi Tachibana ,  Kozo Nishimura ,  Koichi Miyata ,  Yoshihiro Yokota ,  Koji Kobashi

    IPC分类号： C30B29/04 ,  C23C16/02 ,  C23C16/26 ,  C23C16/27 ,  C30B25/02

    CPC分类号： C23C16/271 ,  C23C16/0263 ,  C23C16/0281 ,  C23C16/272 ,  C23C16/274 ,  C23C16/275 ,  C30B25/02 ,  C30B29/04

    摘要： A method is related to grow monocrystalline diamond films by chemical vapor deposition on large area at low cost. The substrate materials are either bulk single crystals of Pt or its alloys, or thin films of those materials deposited on suitable supporting materials. The surfaces of those substrates must be either (111) or (001), or must have domain structures consisting of (111) or (001) crystal surfaces. Those surfaces can be inclined within .+-.10 degree angles from (111) or (001). In order to increase the nucleation density of diamond, the substrate surface can be scratched by buff and/or ultrasonic polishing, or carbon implanted. Monocrystalline diamond films can be grown even though the substrate surfaces have been roughened. Plasma cleaning of substrate surfaces and annealing of Pt or its alloy films are effective in growing high quality monocrystalline diamond films.

    摘要翻译： 一种方法涉及通过化学气相沉积在大面积上以低成本生长单晶金刚石膜。 衬底材料是Pt或其合金的块状单晶，或者是沉积在合适的支撑材料上的那些材料的薄膜。 这些基材的表面必须是（111）或（001），或者必须具有由（111）或（001）晶体表面组成的畴结构。 那些表面可以从（111）或（001）的+/- 10度角倾斜。 为了增加金刚石的成核密度，可以通过抛光和/或超声波抛光或植入碳来划伤基底表面。 即使衬底表面被粗糙化，也可以生长单晶金刚石膜。 衬底表面的等离子体清洗和Pt或其合金膜的退火在生长高品质单晶金刚石膜方面是有效的。

    Diamond heterojunction diode
    10.
    发明授权
    Diamond heterojunction diode 失效
    金刚石异质结二极管

    公开(公告)号：US5298766A

    公开(公告)日：1994-03-29

    申请号：US854910

    申请日：1992-03-20

    申请人： Koji Kobashi ,  Kozo Nishimura ,  Shigeaki Miyauchi ,  Kazuo Kumagai ,  Rie Katoh

    发明人： Koji Kobashi ,  Kozo Nishimura ,  Shigeaki Miyauchi ,  Kazuo Kumagai ,  Rie Katoh

    IPC分类号： H01L21/205 ,  H01L29/16 ,  H01L29/861 ,  H01L29/48 ,  H01L29/56

    CPC分类号： H01L29/1602 ,  H01L29/861

    摘要： A diamond heterojunction diode having an improved rectifying characteristics with a small reverse current and a large forward current. Three layers are formed on a low-resistance p-type silicon substrate by the microwave plasma CVD in the order of a B-doped p type semiconducting diamond layer, an insulating undoped diamond layer (thinner than 1 .mu.m), and an n-type semiconducting silicon layer. Ohmic electrodes are formed on the front side of a n-type semiconducting silicon layer and the back side of a substrate. Under a forward bias, the electric field is applied to the intermediate insulating layer to accelerate the transport of holes and electrons. Under a reversed bias, the energy band has a notch as well as a potential barrier due to the intermediate layer thus preventing holes from transporting from the n-type semiconducting diamond layer to the p-type semiconducting diamond layer, resulting in the improved rectifying characteristics.

    摘要翻译： 金刚石异质结二极管具有改进的整流特性，具有小的反向电流和大的正向电流。 通过微波等离子体CVD以B掺杂p型半导体金刚石层，绝缘未掺杂金刚石层（比1（μm）薄）的顺序，在低电阻p型硅衬底上形成三层， n型半导体硅层。 欧姆电极形成在n型半导体硅层的正面和衬底的背面。 在正向偏压下，电场被施加到中间绝缘层以加速空穴和电子的传输。 在反向偏置下，由于中间层，能带具有缺口以及势垒，从而防止空穴从n型半导体金刚石层传输到p型半导体金刚石层，导致改进的整流特性 。