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    Method to form trench-free buried contact in process with STI technology
    1.
    发明授权
    Method to form trench-free buried contact in process with STI technology 失效
    在STI技术中形成无沟槽埋层接触的方法

    公开(公告)号：US6093619A

    公开(公告)日：2000-07-25

    申请号：US99809

    申请日：1998-06-18

    申请人： Kuo Ching Huang ,  Tse-Liang Ying ,  Chia-Shiung Tsai

    发明人： Kuo Ching Huang ,  Tse-Liang Ying ,  Chia-Shiung Tsai

    IPC分类号： H01L21/762 ,  H01L21/768 ,  H01L21/76

    CPC分类号： H01L21/76224 ,  H01L21/76895

    摘要： A new method of forming a buried contact junction in a process involving shallow trench isolation is described. A first silicon oxide layer is deposited over a pad oxide layer on the surface of a semiconductor substrate. An opening is etched in the first silicon nitride and pad oxide layers where they are not covered by a mask. The substrate underlying the opening is etched into to form a shallow trench. An oxide material is deposited over the surface of the first silicon nitride layer and within the shallow trench and planarized to the surface of the first silicon nitride layer wherein the oxide material forms a STI region. The first silicon nitride layer is removed whereby the STI protrudes above the pad oxide layer. The pad oxide layer is removed whereby the corners of the STI above the substrate are also removed. A second silicon nitride layer is deposited overlying a sacrificial oxide layer and etched away to leave silicon nitride spacers filling in and rounding the corners of the STI. The sacrificial oxide layer is removed. A gate electrode and source/drain regions are formed in and on the substrate wherein a source/drain is adjacent to the STI. The gate electrode and STI are covered with an insulating layer. An opening is etched through the insulating layer to the source/drain region wherein the silicon nitride spacer at the corner of the STI prevents etching of the STI. The opening is filled with a conducting layer to complete formation of a contact.

    摘要翻译： 描述了在涉及浅沟槽隔离的过程中形成掩埋接触结的新方法。 在半导体衬底的表面上的衬垫氧化物层上沉积第一氧化硅层。 在第一氮化硅和衬垫氧化物层中蚀刻开口，其中它们不被掩模覆盖。 蚀刻开口下方的基板以形成浅沟槽。 氧化物材料沉积在第一氮化硅层的表面上并在浅沟槽内，并且平坦化到第一氮化硅层的表面，其中氧化物材料形成STI区域。 去除第一氮化硅层，由此STI突出到衬垫氧化物层的上方。 移除衬垫氧化物层，从而也去除衬底上方的STI的拐角。 将第二氮化硅层沉积在牺牲氧化物层上并被蚀刻掉以留下氮化硅间隔物填充到STI的角部并使其四周。 去除牺牲氧化物层。 栅极电极和源极/漏极区域形成在衬底中和衬底上，其中源极/漏极与STI相邻。 栅电极和STI被绝缘层覆盖。 通过绝缘层蚀刻开口到源极/漏极区域，其中STI的拐角处的氮化硅间隔物防止STI的蚀刻。 开口填充有导电层以完成接触的形成。

    Magnetoresistive random access memory device and method of making same
    2.
    发明授权
    Magnetoresistive random access memory device and method of making same 有权

    公开(公告)号：US10553785B2

    公开(公告)日：2020-02-04

    申请号：US13452230

    申请日：2012-04-20

    申请人： Chern-Yow Hsu ,  Shih-Chang Liu ,  Chia-Shiung Tsai

    发明人： Chern-Yow Hsu ,  Shih-Chang Liu ,  Chia-Shiung Tsai

    IPC分类号： H01L27/22 ,  H01L43/08 ,  H01L43/12 ,  G11C11/16

    摘要： This description relates to a method for fabricating a magnetoresistive random access memory (MRAM) device having a plurality of magnetic tunnel junction (MTJ) units. The method includes forming a bottom conductive layer, forming an anti-ferromagnetic layer and forming a tunnel layer over the bottom conductive layer and the anti-ferromagnetic layer. The method further includes forming a free magnetic layer, having a magnetic moment aligned in a direction that is adjustable by applying an electromagnetic field, over the tunnel layer and forming a top conductive layer over the free magnetic layer. The method further includes performing at least one lithographic process to remove portions of the bottom conductive layer, the anti-ferromagnetic layer, the tunnel layer, the free magnetic layer and the top conductive layer that is uncovered by the photoresist layer until the bottom conductive layer is exposed and removing portions of at least one sidewall of the MTJ unit.

    Biological sensing structures and methods of forming the same
    5.
    发明授权
    Biological sensing structures and methods of forming the same 有权
    生物传感结构及其形成方法

    公开(公告)号：US08846129B2

    公开(公告)日：2014-09-30

    申请号：US13372141

    申请日：2012-02-13

    申请人： Hung-Hua Lin ,  Li-Cheng Chu ,  Ming-Tung Wu ,  Yuan-Chih Hsieh ,  Lan-Lin Chao ,  Chia-Shiung Tsai

    发明人： Hung-Hua Lin ,  Li-Cheng Chu ,  Ming-Tung Wu ,  Yuan-Chih Hsieh ,  Lan-Lin Chao ,  Chia-Shiung Tsai

    IPC分类号： B05D3/10 ,  C12Q1/68 ,  H01L21/311

    CPC分类号： G01N21/55 ,  G01N21/01 ,  G01N21/253 ,  G01N27/327 ,  G01N33/483 ,  G01N2021/0106 ,  G01N2201/0636

    摘要： A method of forming of biological sensing structures including a portion of a substrate is recessed to form a plurality of mesas in the substrate. Each of the plurality of mesas has a top surface and a sidewall surface. A first light reflecting layer is deposited over the top surface and the sidewall surface of each mesa. A filling material is formed over a first portion of the first light reflecting layer. A stop layer is deposited over the filling material and a second portion of the first light reflecting layer. A sacrificial layer is formed over the stop layer and is planarized exposing the stop layer. A first opening is formed in the stop layer and the first light reflecting layer. A second light reflecting layer is deposited over the first opening. A second opening is formed in the second light reflecting layer.

    摘要翻译： 形成包括衬底的一部分的生物感测结构的方法被凹进以在衬底中形成多个台面。 多个台面中的每一个具有顶表面和侧壁表面。 第一光反射层沉积在每个台面的顶表面和侧壁表面上。 在第一光反射层的第一部分上形成填充材料。 沉积在填充材料上的停止层和第一光反射层的第二部分。 牺牲层形成在停止层上并且被平坦化地暴露停止层。 在停止层和第一光反射层中形成第一开口。 第二光反射层沉积在第一开口上。 在第二光反射层中形成第二开口。