摘要:
An apparatus and method of forming a color image on a recording sheet by transferring respective images onto a single recording sheet conveyed by a conveying belt, where the combination of the respective images form the color image. The respective color images are formed with a plurality of electrophotographic processing sections disposed along the conveying belt such that the respective color images are superimposed on one another to make the color image. The electrophotographic processing sections also form more than two colors, of a same pattern, of image positional deviation detecting marks. The image positional deviation detecting marks include a line in a main scanning direction and another line positioned at an incline with respect to the former line in order on the conveying belt. A detector is included that detects the image positional deviation detecting mark with a single detecting device composed of a light source, a slit, and a light accepting element.
摘要:
An apparatus and method of forming a color image on a recording sheet by transferring respective images onto a single recording sheet conveyed by a conveying belt, where the combination of the respective images form the color image. The respective color images are formed with a plurality of electrophotographic processing sections disposed along the conveying belt such that the respective color images are superimposed on one another to make the color image. The electrophotographic processing sections also form more than two colors, of a same pattern, of image positional deviation detecting marks. The image positional deviation detecting marks include a line in a main scanning direction and another line positioned at an incline with respect to the former line in order on the conveying belt. A detector is included that detects the image positional deviation detecting mark with a single detecting device composed of a light source, a slit, and a light accepting element.
摘要:
A power module and a power converter device including the power module include: two base plates with their main surfaces facing each other; a semiconductor circuit unit disposed between the two base plates; a connecting member that is connected to the two base plates and forms a housing region in which the semiconductor circuit unit is housed; and an insulating member that is placed between the base plate and the semiconductor circuit unit and secures electrical insulation of the base plate and the semiconductor circuit unit. A rigidity or thickness of the connecting member is less than a rigidity or thickness of the base plate.
摘要:
The power conversion apparatus uses the semiconductor device. Said semiconductor device includes a first group of power semiconductor elements at least one of which is electrically connected between a first potential and a third potential, a second group of power semiconductor elements at least one of which is electrically connected between a second potential and the third potential, and a third group of power semiconductor elements at least one of which is electrically connected between the first potential and the third potential. The second group is disposed between the first group and third group.Thereby, a low-loss semiconductor device having both inductance reducibility and heat generation balancing capability and also an electric power conversion apparatus using the same is provided.
摘要:
Semiconductor devices,-semiconductor wafers, and semiconductor modules are provided: wherein the semiconductor device has a small warp; damages at chip edge and cracks in a dropping test are scarcely generated; and the semiconductor device is superior in mounting reliability and mass producibility.The semiconductor device 17 comprising: a semiconductor chip 64; a porous stress relaxing layer 3 provided on the plane, whereon circuits and electrodes are formed, of the semiconductor chip; a circuit layer 2 provided on the stress relaxing layer and connected to the electrodes; and external terminals 10 provided on the circuit layer; wherein an organic protecting film 7 is formed on the plane, opposite to the stress relaxing layer, of the semiconductor chip, and respective side planes of the stress relaxing layer, the semiconductor chip 6, and the protecting film 7 are exposed outside on a same plane.
摘要:
The power conversion apparatus uses the semiconductor device. Said semiconductor device includes a first group of power semiconductor elements at least one of which is electrically connected between a first potential and a third potential, a second group of power semiconductor elements at least one of which is electrically connected between a second potential and the third potential, and a third group of power semiconductor elements at least one of which is electrically connected between the first potential and the third potential. The second group is disposed between the first group and third group. Thereby, a low-loss semiconductor device having both inductance reducibility and heat generation balancing capability and also an electric power conversion apparatus using the same is provided.
摘要:
A semiconductor device having a semiconductor element is obtained by cutting a semiconductor wafer, having an electrode pad formed on one side thereof, along a scribe line. The semiconductor device has a semiconductor element protective layer on the semiconductor element so as to form an opening above the pad, a stress cushioning layer on the layer so as to form an opening on the pad, a lead wire portion reaching the layer from the electrode pad via the openings, external electrodes on the lead wire portion, and a conductor protective layer on the layer. The layer, the layer, and the conductor protective layer form respective end faces on the end surface of the semiconductor element inside the scribe line and expose a surface of the semiconductor element from the end face of the end surface to a point inside of the scribe line, thereby to expose the scribe line.
摘要:
In a multi-chip module, a plurality of semiconductor chips are mounted on a single wiring board. Upper surfaces of the chips are covered with a single heat spread plate, and the whole space around the chips sandwiched between the wiring board and the heat spread plate is filled with resin. The semiconductor chips are interconnected through the resin so that any stress exerted on any chips is dispersed. This diminishes the occurrence of cracks caused by stress concentration. Since the chips and the heat spread plate are bonded together with resin, even if there are variations in size of the chips, both can be bonded easily. Further, the bonding of all the chips and the heat spread plate can be done in a single process.
摘要:
A semiconductor device and a manufacturing method thereof, which device includes a semiconductor element arranged to form integrated circuitry, a plurality of electrode pads formed on the side of the integrated circuitry formation surface of the semiconductor element, bump electrodes for electrically connecting to the electrode pads through a conductive layer, and a stress relaxation layer formed between the integrated circuitry formation surface and electrode pads on one hand and the bump electrodes and conductive layer on the other hand, the stress relaxation layer being adhered thereto, wherein more than one third of the stress relaxation layer from a surface thereof is cut away for removal and wherein the stress relaxation layer is subdivided into a plurality of regions. Accordingly, it is possible to provide a semiconductor device capable of offering high density mounting schemes with increased reliability while reducing production costs.