公开(公告)号：US11758759B2

公开(公告)日：2023-09-12

申请号：US17719702

申请日：2022-04-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Hiroki Adachi ,  Shingo Eguchi

IPC: H10K50/844 ,  G09G5/14 ,  H10K77/10 ,  H10K59/12

CPC classification number: H10K50/844 ,  G09G5/14 ,  H10K77/111 ,  G09G2354/00 ,  G09G2380/02 ,  H10K59/12

Abstract: A novel display panel that is highly convenient or reliable is provided. The display panel includes a first region and a second region. The second region is provided with a first component, and the second region can be bent with the first component facing outward. The first component includes a first elastic body and a second elastic body. The second elastic body includes an end portion part or the whole of which is covered with the first elastic body. The second elastic body has a higher elastic modulus than the first elastic body.

公开(公告)号：US20230263018A1

公开(公告)日：2023-08-17

申请号：US18138866

申请日：2023-04-25

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Masakatsu Ohno ,  Hiroki Adachi ,  Satoru Idojiri ,  Koichi Takeshima

IPC: H10K59/126 ,  H01L27/12 ,  H10K50/844 ,  H10K50/842 ,  H10K59/38 ,  H10K59/124 ,  H10K59/121 ,  H10K71/00 ,  H10K71/50 ,  H10K71/80 ,  H10K71/40 ,  H10K77/10 ,  H01L29/24 ,  H01L29/66 ,  H01L29/786 ,  B23K26/0622 ,  B23K26/04 ,  B23K26/06 ,  B23K26/08

CPC classification number: H10K59/126 ,  H01L27/1225 ,  H01L27/1266 ,  H10K50/844 ,  H10K50/8426 ,  H10K59/38 ,  H10K59/124 ,  H10K59/1213 ,  H10K71/00 ,  H10K71/50 ,  H10K71/80 ,  H10K71/421 ,  H10K77/111 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/7869 ,  B23K26/0622 ,  B23K26/04 ,  B23K26/0617 ,  B23K26/0643 ,  B23K26/0648 ,  B23K26/083 ,  Y02E10/549 ,  Y02P70/50 ,  H10K50/18

Abstract: A first organic resin layer is formed over a first substrate; a first insulating film is formed over the first organic resin layer; a first element layer is formed over the first insulating film; a second organic resin layer is formed over a second substrate; a second insulating film is formed over the second organic resin layer; a second element layer is formed over the second insulating film; the first substrate and the second substrate are bonded; a first separation step in which adhesion between the first organic resin layer and the first substrate is reduced; the first organic resin layer and a first flexible substrate are bonded with a first bonding layer; a second separation step in which adhesion between the second organic resin layer and the second substrate is reduced; and the second organic resin layer and a second flexible substrate are bonded with a second bonding layer.

公开(公告)号：US20220238836A1

公开(公告)日：2022-07-28

申请号：US17581064

申请日：2022-01-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kenichi Okazaki ,  Shingo Eguchi ,  Hiroki Adachi

IPC: H01L51/52 ,  H01L51/50

Abstract: A display device with high display quality is provided. The display device includes a first lower electrode, a first EL layer over the first lower electrode, a second lower electrode, a second EL layer over the second lower electrode, an upper electrode over the first EL layer and the second EL layer, a first region not provided with the first lower electrode below the first EL layer, and a second region not provided with the second lower electrode below the second EL layer. In the first region, the upper electrode is positioned not to be in contact with the first lower electrode. In the second region, the upper electrode is positioned not to be in contact with the second lower electrode.

公开(公告)号：US11133491B2

公开(公告)日：2021-09-28

申请号：US16493104

申请日：2018-03-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Seiji Yasumoto ,  Kayo Kumakura ,  Yuka Sato ,  Satoru Idojiri ,  Hiroki Adachi ,  Kenichi Okazaki

IPC: H01L27/15 ,  H01L51/56 ,  H01L51/00 ,  H01L51/52

Abstract: A high-yield fabricating method of a semiconductor device including a peeling step is provided.
A peeling method includes a step of stacking and forming a first material layer and a second material layer over a substrate and a step of separating the first material layer and the second material layer from each other. The second material layer is formed over the substrate with the first material layer therebetween. The first material layer includes a first compound layer in contact with the second material layer and a second compound layer positioned closer to the substrate side than the first compound layer is. The first compound layer has the highest oxygen content among the layers included in the first material layer. The second compound layer has the highest nitrogen content among the layers included in the first material layer. The second material layer includes a resin. In the step of separating, the first material layer and the second material layer are separated from each other by irradiation of an interface between the first material layer and the second material layer or the vicinity of the interface with light.

公开(公告)号：US10680020B2

公开(公告)日：2020-06-09

申请号：US15473962

申请日：2017-03-30

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Yasuharu Hosaka ,  Satoru Idojiri ,  Kenichi Okazaki ,  Hiroki Adachi ,  Daisuke Kubota

IPC: H01L27/12 ,  H01L21/683 ,  H01L29/66 ,  H01L29/786 ,  H01L27/32

Abstract: A peeling method at low cost with high mass productivity is provided. A resin layer having a thickness greater than or equal to 0.1 μm and less than or equal to 3 μm is formed over a formation substrate using a photosensitive and thermosetting material, a transistor including an oxide semiconductor in a channel formation region is formed over the resin layer, the resin layer is irradiated with light using a linear laser device, and the transistor and the formation substrate are separated from each other. A first region and a second region which is thinner than the first region or an opening can be formed in the resin layer. In the case of forming a conductive layer functioning as an external connection terminal or the like to overlap with the second region or the opening of the resin layer, the conductive layer is exposed.

公开(公告)号：US10031392B2

公开(公告)日：2018-07-24

申请号：US15285096

申请日：2016-10-04

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masataka Nakada ,  Masahiro Katayama ,  Seiji Yasumoto ,  Hiroki Adachi ,  Masataka Sato ,  Koji Kusunoki ,  Yoshiharu Hirakata

IPC: G02F1/1362 ,  G06F3/01 ,  G02F1/1335 ,  G06F3/041 ,  G02F1/1345 ,  G02F1/1333 ,  H01L27/12

Abstract: Provided is a novel display panel that is highly convenient or highly reliable, a novel input/output device that is highly convenient or highly reliable, or a method for manufacturing a novel display panel that is highly convenient or highly reliable. The present inventors conceived a structure including a first intermediate film, a first electrode including a region in contact with the first intermediate film, a pixel that includes a first display element including the first electrode and a pixel circuit electrically connected to the first display element, a signal line electrically connected to the pixel, and a terminal that includes a third conductive film electrically connected to the signal line and a second intermediate film including a region in contact with the third conductive film.

公开(公告)号：US09676175B2

公开(公告)日：2017-06-13

申请号：US14740957

申请日：2015-06-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hiroki Adachi ,  Saki Eguchi ,  Masakatsu Ohno ,  Junpei Yanaka ,  Yoshiharu Hirakata

IPC: B32B43/00 ,  H01L21/67 ,  B32B37/12 ,  B32B37/22 ,  B32B38/10 ,  B32B38/18 ,  B32B39/00 ,  H01L21/683 ,  B32B37/00

CPC classification number: B32B43/006 ,  B32B37/003 ,  B32B37/025 ,  B32B37/12 ,  B32B37/187 ,  B32B37/22 ,  B32B38/10 ,  B32B38/18 ,  B32B39/00 ,  B32B2457/00 ,  B32B2457/20 ,  B32B2457/208 ,  H01L21/67132 ,  H01L21/6835 ,  H01L2221/68318 ,  H01L2221/6835 ,  H01L2221/68363 ,  H01L2221/68386 ,  Y10T156/195

Abstract: A peeling apparatus including a support body supply unit, a support body hold unit, a transfer mechanism, and a first structure body. The first structure body has a convex surface. The support body supply unit has a function of unwinding a first support body and includes one of a pair of tension applying mechanisms. The support body hold unit includes the other of the pair of tension applying mechanisms. The pair of tension applying mechanisms applies tension to the first support body. The transfer mechanism has a function of transferring a process member. The first structure body has a function of bending back the first support body along the convex surface. The first structure body has a function of dividing the process member into a first member and a second member. An angle at which the first structure body bends back the first support body is an obtuse angle.

公开(公告)号：US09437832B2

公开(公告)日：2016-09-06

申请号：US14621914

申请日：2015-02-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Tatsuya Sakuishi ,  Yutaka Uchida ,  Hiroki Adachi ,  Saki Eguchi ,  Junpei Yanaka ,  Kayo Kumakura ,  Seiji Yasumoto ,  Kohei Yokoyama ,  Akihiro Chida

IPC: H01L51/00 ,  B32B7/02 ,  B32B38/10 ,  B32B7/12 ,  B32B15/08 ,  B32B15/18 ,  B32B15/20 ,  B32B17/00 ,  B32B27/20 ,  B32B27/28 ,  B32B27/30 ,  B32B27/32 ,  B32B27/34 ,  B32B27/36 ,  B32B37/02 ,  B32B37/18 ,  B32B37/12 ,  H01L51/52

CPC classification number: H01L51/0097 ,  B32B7/02 ,  B32B7/06 ,  B32B7/12 ,  B32B15/08 ,  B32B15/18 ,  B32B15/20 ,  B32B17/00 ,  B32B17/06 ,  B32B27/20 ,  B32B27/286 ,  B32B27/30 ,  B32B27/325 ,  B32B27/34 ,  B32B27/36 ,  B32B27/365 ,  B32B37/02 ,  B32B37/10 ,  B32B37/1292 ,  B32B37/18 ,  B32B38/10 ,  B32B2250/05 ,  B32B2255/20 ,  B32B2260/021 ,  B32B2260/046 ,  B32B2264/102 ,  B32B2307/202 ,  B32B2307/40 ,  B32B2307/50 ,  B32B2307/536 ,  B32B2307/558 ,  B32B2310/0843 ,  B32B2315/08 ,  B32B2457/20 ,  H01L51/003 ,  H01L51/5253 ,  H01L2251/5338 ,  Y02E10/549 ,  Y02P70/521

Abstract: A flexible device is provided. The hardness of a bonding layer of the flexible device is set to be higher than Shore D of 70, or preferably higher than or equal to Shore D of 80. The coefficient of expansion of a flexible substrate of the flexible device is set to be less than 58 ppm/° C., or preferably less than or equal to 30 ppm/° C.

Abstract translation: 提供了灵活的设备。 柔性装置的粘合层的硬度设定为高于70°的肖氏D值，或优选高于或等于邵氏D的80°。挠性装置的柔性基板的膨胀系数设定得较小 比58ppm /℃，或优选小于或等于30ppm /℃

公开(公告)号：US09312513B2

公开(公告)日：2016-04-12

申请号：US14294599

申请日：2014-06-03

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toshiji Hamatani ,  Hiroki Adachi

IPC: H01L51/50 ,  H01L51/52 ,  H05B33/10 ,  G02B5/02 ,  G02B3/00

CPC classification number: H01L51/5253 ,  G02B3/0025 ,  G02B3/0056 ,  G02B5/0226 ,  G02B5/0268 ,  H01L51/50 ,  H01L51/5268 ,  H01L51/5275 ,  H01L2251/10 ,  H01L2251/5369 ,  H05B33/10

Abstract: The lighting device includes a first resin layer having a first refractive index and a second resin layer having a second refractive index lower than the first refractive index and higher than the refractive index of the air, which are over a light-emitting element layer, a plurality of granules provided at the interface between the first resin layer and the second resin layer and each having the second refractive index or a plurality of projections each having an apex provided inside the first resin layer and a flat surface in contact with the interface between the first resin layer and the second resin layer and having the second refractive index, an uneven structure provided at the interface with the air, and a resin substrate having the second refractive index.

Abstract translation: 照明装置包括在发光元件层之上具有第一折射率的第一树脂层和具有低于第一折射率的第二折射率并高于空气的折射率的第二树脂层， 设置在第一树脂层和第二树脂层之间的界面处并且各自具有第二折射率的多个颗粒或者具有设置在第一树脂层内部的顶点的多个突起以及与第一树脂层之间的界面接触的平坦表面 第一树脂层和第二树脂层，并且具有第二折射率，在与空气的界面处设置的不平坦结构，以及具有第二折射率的树脂基板。

公开(公告)号：US08859947B2

公开(公告)日：2014-10-14

申请号：US13930487

申请日：2013-06-28

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hiroki Adachi

IPC: H01J40/14 ,  G03B27/16 ,  H01L27/12 ,  H01L21/027 ,  H01L29/66 ,  G03B27/00 ,  G09G3/32

CPC classification number: H01L27/1288 ,  G03B27/00 ,  G03B27/16 ,  G03F7/702 ,  G09G3/3208 ,  H01L21/0273 ,  H01L27/12 ,  H01L27/1214 ,  H01L29/66765

Abstract: The present invention provides a highly controllable device for exposure from the back side and an exposure method, and also provides a method of manufacturing a semiconductor device using the same. The present invention involves exposure with the use of the back side exposure device of which a reflecting means is disposed on the front side of a substrate, apart from a photosensitive thin film surface by a distance X (X=0.1 μm to 1000 μm), and formation of a photosensitive thin film pattern in a self alignment manner, with good controllability, at a position a distance Y away from the end of a pattern. The invention fabricates a TFT using that method.

Abstract translation: 本发明提供了一种用于从背面曝光的高度可控的装置和曝光方法，并且还提供了一种制造使用该装置的半导体器件的方法。 本发明涉及使用背光曝光装置曝光，其中反射装置设置在基板的正面，远离光敏薄膜表面X（X =0.1μm至1000μm）， 并且在远离图案末端的距离Y的位置以自对准的方式形成感光薄膜图案，具有良好的可控性。 本发明使用该方法制造TFT。