公开(公告)号：US20150255679A1

公开(公告)日：2015-09-10

申请号：US14721224

申请日：2015-05-26

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Jin Woong LEE ,  Kyoung Wan KIM ,  Yeo Jin YOON ,  Ye Seul KIM ,  Tae Kyoon KIM

IPC: H01L33/38 ,  H01L33/00 ,  H01L33/60 ,  H01L33/42 ,  H01L33/20 ,  H01L33/62

CPC classification number: H01L33/382 ,  H01L24/05 ,  H01L33/005 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/20 ,  H01L33/38 ,  H01L33/387 ,  H01L33/42 ,  H01L33/46 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/04042 ,  H01L2224/05558 ,  H01L2224/05644 ,  H01L2924/12032 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/0033 ,  H01L2933/0058 ,  H01L2933/0066 ,  H01L2924/00

Abstract: A light-emitting diode (LED) including a semiconductor stack structure including a first semiconductor layer, an active layer, and a second semiconductor layer, the semiconductor stack disposed on a substrate, a conductive substrate disposed on the semiconductor stack structure, and an electrode disposed on the conductive substrate and in ohmic contact with the conductive substrate, wherein the electrode comprises grooves penetrating the electrode and a portion of the conductive substrate.

Abstract translation: 1.一种发光二极管（LED），包括包括第一半导体层，有源层和第二半导体层的半导体堆叠结构，设置在基板上的半导体堆叠，设置在半导体堆叠结构上的导电基板和电极 设置在导电衬底上并与导电衬底欧姆接触，其中电极包括穿透电极的沟槽和导电衬底的一部分。

公开(公告)号：US20140131731A1

公开(公告)日：2014-05-15

申请号：US14076626

申请日：2013-11-11

Applicant: Seoul Viosys Co., Ltd.

Inventor： Ye Seul KIM ,  Shin Hyoung Kim ,  Kyoung Wan Kim ,  Yeo Jin Yoon ,  Jun Woong Lee ,  Tae Gyun Kim

IPC: H01L33/32

CPC classification number: H01L33/32 ,  H01L33/14 ,  H01L33/22 ,  H01L33/382 ,  H01L2933/0016

Abstract: A light-emitting device according to an exemplary embodiment of the present invention includes a first conductivity-type semiconductor layer disposed on a substrate; an active layer disposed on the first conductivity-type semiconductor layer; a second conductivity-type semiconductor layer disposed on the active layer; and an irregular convex-concave pattern disposed on a surface of the first conductivity-type semiconductor layer. The irregular convex-concave pattern includes convex portions and concave portions, and the convex portions have irregular heights and the concave portions have irregular depths. The first conductivity-type semiconductor layer including the irregular convex-concave pattern is exposed from the active layer and the second conductivity-type semiconductor layer.

Abstract translation: 根据本发明的示例性实施例的发光器件包括设置在基板上的第一导电型半导体层; 设置在所述第一导电型半导体层上的有源层; 设置在有源层上的第二导电型半导体层; 以及设置在第一导电型半导体层的表面上的不规则的凸凹图案。 不规则的凸凹图案包括凸部和凹部，凸部具有不规则的高度，凹部具有不规则的深度。 包含不规则凸凹图案的第一导电型半导体层从有源层和第二导电型半导体层露出。

公开(公告)号：US20190056070A1

公开(公告)日：2019-02-21

申请号：US16166159

申请日：2018-10-22

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Ye Seul KIM ,  Kyoung Wan Kim ,  Sang Won Woo ,  Ji Hye Kim

IPC: F21K9/232 ,  G06F1/16 ,  H01L33/38 ,  H01L33/42 ,  H01L33/46 ,  H01L33/62 ,  H01L33/32 ,  H01L33/00 ,  H01L25/075 ,  H01L33/06

CPC classification number: F21K9/232 ,  F21Y2107/70 ,  G06F1/1662 ,  H01L25/0753 ,  H01L33/0033 ,  H01L33/0095 ,  H01L33/06 ,  H01L33/22 ,  H01L33/32 ,  H01L33/38 ,  H01L33/382 ,  H01L33/42 ,  H01L33/46 ,  H01L33/62 ,  H01L2224/73204 ,  H01L2933/0016 ,  H01L2933/0025 ,  H05K1/189 ,  H05K2201/0108 ,  H05K2201/10106

Abstract: A light emitting diode chip includes: a first conductive type semiconductor layer disposed on a substrate; a mesa disposed on the first conductive type semiconductor layer and including an active layer and a second conductive type semiconductor layer; at least one groove disposed on a side surface of the mesa forming a concave region; an extension electrode forming ohmic contact with the first conductive type semiconductor layer in the concave region; an insulation layer covering the extension electrode, the first conductive type semiconductor layer, and the mesa, and including at least one first opening exposing the extension electrode and a second opening; a first pad electrode disposed on the insulation layer and electrically connected to the first conductive type semiconductor layer through the first opening; and a second pad electrode disposed on the insulation layer and electrically connected to the second conductive type semiconductor layer through the second opening.

公开(公告)号：US20170200857A1

公开(公告)日：2017-07-13

申请号：US15469253

申请日：2017-03-24

Applicant: Seoul Viosys Co., Ltd.

Inventor： Kyung Wan KIM ,  Tae Kyoon KIM ,  Yeo Jin YOON ,  Ye Seul KIM ,  Sang Hyun OH ,  Jin Woong LEE ,  In Soo KIM

IPC: H01L33/22 ,  H01L33/32 ,  H01L33/00 ,  H01L33/06

CPC classification number: H01L33/385 ,  H01L33/007 ,  H01L33/0095 ,  H01L33/025 ,  H01L33/06 ,  H01L33/20 ,  H01L33/22 ,  H01L33/30 ,  H01L33/32 ,  H01L2933/0016 ,  H01L2933/0058

Abstract: A method of fabricating a light emitting diode (LED) includes: sequentially stacking a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer on a substrate; and separating the substrate into unit chips, and at the same time, forming a concavo-convex structure having the shape of irregular vertical lines in a side surface of the unit chip.

公开(公告)号：US20170108937A1

公开(公告)日：2017-04-20

申请号：US15279549

申请日：2016-09-29

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Ye Seul KIM ,  Kyoung Wan KIM ,  Sang Won WOO ,  Ji Hye KIM

IPC: G06F3/02 ,  H01H13/83 ,  H01L33/38 ,  H01L33/62 ,  H01L33/46

CPC classification number: G06F3/0202 ,  G06F1/1662 ,  H01H13/83 ,  H01H2219/036 ,  H01L33/38 ,  H01L33/382 ,  H01L33/46

Abstract: A light emitting diode chip used in devices includes: a substrate including protrusions disposed on an upper surface; a light emitting structure disposed on the substrate and including at least one hole through a second conductive type semiconductor layer and an active layer and partially exposing a first conductive type semiconductor layer; a contact electrode including an optically transparent conductive oxide; a light reflective insulation layer including a distributed Bragg reflector; a first pad electrode electrically connected to the first conductive type semiconductor layer; and a second pad electrode electrically connected to the contact electrode, wherein a portion of an upper surface of the substrate is exposed around the light emitting structure, the light reflective insulation layer adjoins the exposed portion of the upper surface of the substrate around the light emitting structure, and an upper edge of the substrate is spaced from the light reflective insulation layer.

公开(公告)号：US20190165208A1

公开(公告)日：2019-05-30

申请号：US16264866

申请日：2019-02-01

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Ji Hye KIM ,  Kyoung Wan KIM ,  Ye Seul KIM

IPC: H01L33/14 ,  H01L33/32 ,  H01L33/62 ,  H01L33/20 ,  H01L33/46 ,  H01L33/38

Abstract: A light emitting diode includes a current blocking layer interposed between a first connection pad and a first conductivity type semiconductor layer to improve efficiency in spreading of electric current supplied to the first conductivity type semiconductor layer.

公开(公告)号：US20190123244A1

公开(公告)日：2019-04-25

申请号：US16218042

申请日：2018-12-12

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Ye Seul KIM ,  Kyoung Wan KIM ,  Sang Hyun OH ,  Duk Il SUH ,  Sang Won WOO ,  Ji Hye KIM

IPC: H01L33/44 ,  H01L33/14 ,  H01L33/24 ,  H01L33/32 ,  H01L33/38 ,  H01L33/42 ,  H01L33/62 ,  H01L33/06

Abstract: A light-emitting element according to an embodiment of the present document has a transparent electrode having an opening, and the transparent electrode has a protrusion on a side surface of the opening. A second electrode pad is arranged on the opening of the transparent electrode, and abuts the protrusion. Accordingly, peeling of the second electrode pad can be prevented, thereby improving the reliability of the light-emitting element.

公开(公告)号：US20140159089A1

公开(公告)日：2014-06-12

申请号：US14098687

申请日：2013-12-06

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Jin Woong LEE ,  Kyoung Wan KIM ,  Yeo Jin YOON ,  Ye Seul KIM ,  Tae Kyoon KIM

IPC: H01L33/38 ,  H01L33/20 ,  H01L33/46

CPC classification number: H01L33/382 ,  H01L24/05 ,  H01L33/005 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/20 ,  H01L33/38 ,  H01L33/387 ,  H01L33/42 ,  H01L33/46 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/04042 ,  H01L2224/05558 ,  H01L2224/05644 ,  H01L2924/12032 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/0033 ,  H01L2933/0058 ,  H01L2933/0066 ,  H01L2924/00

Abstract: Exemplary embodiments of the present invention disclose a light-emitting diode (LED) including a semiconductor stack structure including a first semiconductor layer, an active layer, and a second semiconductor layer, the semiconductor stack disposed on a substrate, a conductive substrate disposed on the semiconductor stack structure, and an electrode disposed on the conductive substrate and in ohmic contact with the conductive substrate, wherein the electrode comprises grooves penetrating the electrode and a portion of the conductive substrate.

Abstract translation: 本发明的示例性实施例公开了一种包括半导体堆叠结构的发光二极管（LED），其包括第一半导体层，有源层和第二半导体层，设置在基板上的半导体堆叠， 半导体堆叠结构，以及设置在导电衬底上并与导电衬底欧姆接触的电极，其中电极包括穿透电极和导电衬底的一部分的沟槽。

公开(公告)号：US20190067526A1

公开(公告)日：2019-02-28

申请号：US15767284

申请日：2016-06-17

Applicant: Seoul Viosys Co., Ltd.

Inventor： Ye Seul KIM ,  Sang Won WOO ,  Kyoung Wan KIM

IPC: H01L33/46

Abstract: A light emitting diode chip including a light emitting structure having an active layer, and a distributed Bragg reflector (DBR) disposed to reflect light emitted therefrom. The DBR has first and second regions, and a third region therebetween. The first region is closer to the light emitting structure than the second and third regions. The DBR includes first material layers having a high index of refraction and second material layers having a low index of refraction alternately disposed one over another. The first material layers include first, second, and third groups having an optical thickness greater than 0.25λ+10%, in a range of 0.25λ−10% to 0.25λ+10%, and less than 0.25λ−10%, respectively. With respect to a central wavelength (λ: 554 nm) of the visible range, the first region has the first and second groups, the second region has the third group, and the third region has the second and third groups.

公开(公告)号：US20170108173A1

公开(公告)日：2017-04-20

申请号：US15348192

申请日：2016-11-10

Applicant: Seoul Viosys Co., Ltd.

Inventor： Ye Seul KIM ,  Kyoung Wan Kim ,  Snag Won Woo ,  Ji Hye Kim

IPC: F21K9/232 ,  H01L33/06 ,  H01L33/46 ,  H01L33/38 ,  F21S4/24 ,  H01L33/42 ,  H01L33/00 ,  H01L25/075 ,  H05K1/18 ,  H01L33/32 ,  H01L33/62

CPC classification number: F21K9/232 ,  F21Y2107/70 ,  G06F1/1662 ,  H01L25/0753 ,  H01L33/0033 ,  H01L33/0095 ,  H01L33/06 ,  H01L33/22 ,  H01L33/32 ,  H01L33/38 ,  H01L33/382 ,  H01L33/42 ,  H01L33/46 ,  H01L33/62 ,  H01L2224/73204 ,  H01L2933/0016 ,  H01L2933/0025 ,  H05K1/189 ,  H05K2201/10106

Abstract: A light emitting diode chip includes: a first conductive type semiconductor layer disposed on a substrate; a mesa disposed on the first conductive type semiconductor layer and including an active layer and a second conductive type semiconductor layer; an insulation layer covering the first conductive type semiconductor layer and the mesa, the insulation layer including at least one first opening exposing the first conductive type semiconductor layer and a second opening disposed on the mesa; a first pad electrode disposed on the insulation layer and electrically connected to the first conductive type semiconductor layer through the first opening; and a second pad electrode disposed on the insulation layer and electrically connected to the second conductive type semiconductor layer through the second opening. The first opening of the insulation layer includes a first region covered by the first pad electrode and a second region exposed outside the first pad electrode.