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    Plasma etching apparatus
    1.
    发明授权
    Plasma etching apparatus 有权

    公开(公告)号：US10153135B2

    公开(公告)日：2018-12-11

    申请号：US15190722

    申请日：2016-06-23

    Applicant: SPTS Technologies Limited

    Inventor： Anthony Paul Wilby ,  Stephen R Burgess ,  Ian Moncrieff ,  Paul Densley ,  Clive L Widdicks ,  Paul Rich ,  Adrian Thomas

    IPC: H01J37/32 ,  H01L21/67 ,  C23C14/34

    Abstract: An ICP plasma etching apparatus for etching a substrate includes at least one chamber, a substrate support positioned within the chamber, a plasma production device for producing a plasma for use in etching the substrate, and a protective structure which surrounds the substrate support so that, in use, a peripheral portion of the substrate is protected from unwanted deposition of material. The protective structure is arranged to be electrically biased and is formed from a metallic material so that metallic material can be sputtered from the protective structure onto an interior surface of the chamber to adhere particulate material to the interior surface.

    Method and apparatus for processing a semiconductor workpiece
    3.
    发明授权
    Method and apparatus for processing a semiconductor workpiece 有权
    用于处理半导体工件的方法和装置

    公开(公告)号：US08728953B2

    公开(公告)日：2014-05-20

    申请号：US13965254

    申请日：2013-08-13

    Applicant: SPTS Technologies Limited

    Inventor： Stephen R Burgess ,  Anthony P Wilby

    IPC: H01L21/31

    CPC classification number: H01L21/02104 ,  C23C14/34 ,  C23C16/455 ,  H01L21/67109 ,  H01L21/67253

    Abstract: A method of processing a semiconductor workpiece includes placing a back surface of the workpiece on a workpiece support in a chamber so that the front surface of the workpiece faces into the chamber for processing, and the back surface is in fluid communication with a back region having an associated back gas pressure. The method further includes performing a workpiece processing step at a first chamber pressure Pc1 and a first back pressure Pb1, wherein Pc1 and Pb1 give rise to a pressure differential, Pb1−Pc1, and performing a workpiece cooling step at a second chamber pressure Pc2 and a second back pressure Pb2, wherein Pc2 and Pb2 are higher than Pc1 and Pb1, respectively.

    Abstract translation: 一种处理半导体工件的方法包括将工件的后表面放置在腔室中的工件支撑件上，使得工件的前表面面向腔室进行加工，并且后表面与具有 相关的后气体压力。 该方法还包括以第一室压Pc1和第一背压Pb1执行工件处理步骤，其中Pc1和Pb1产生压差Pb1-Pc1，并在第二室压力Pc2下执行工件冷却步骤， 第二背压Pb2，其中Pc2和Pb2分别高于Pc1和Pb1。

    PE-CVD apparatus and method
    5.
    发明授权
    PE-CVD apparatus and method 有权

    公开(公告)号：US09783886B2

    公开(公告)日：2017-10-10

    申请号：US15064631

    申请日：2016-03-09

    Applicant: SPTS Technologies Limited

    Inventor： Daniel T Archard ,  Stephen R Burgess ,  Mark I Carruthers ,  Andrew Price ,  Keith E Buchanan ,  Katherine Crook

    IPC: C23C16/455 ,  H01J37/32 ,  C23C16/513

    CPC classification number: C23C16/455 ,  C23C16/513 ,  H01J37/32633 ,  H01J37/32834

    Abstract: A plasma-enhanced chemical vapor deposition (PE-CVD) apparatus includes a chamber including a circumferential pumping channel, a substrate support disposed within the chamber, one or more gas inlets for introducing gas into the chamber, a plasma production device for producing a plasma in the chamber, and an upper and a lower element positioned in the chamber. The upper element is spaced apart from the substrate support to confine the plasma and to define a first circumferential pumping gap, and the upper element acts as a radially inward wall of the circumferential pumping channel. The upper and lower elements are radially spaced apart to define a second circumferential pumping gap which acts as an entrance to the circumferential pumping channel, in which the second circumferential pumping gap is wider than the first circumferential pumping gap.

    Method of improving adhesion
    8.
    发明授权
    Method of improving adhesion 有权

    公开(公告)号：US10096468B2

    公开(公告)日：2018-10-09

    申请号：US15383162

    申请日：2016-12-19

    Applicant: SPTS Technologies Limited

    Inventor： Kathrine Crook ,  Stephen R Burgess ,  Andrew Price

    IPC: H01L21/02 ,  H01L29/06

    Abstract: A method is for improving adhesion between a semiconductor substrate and a dielectric layer. The method includes depositing a silicon dioxide adhesion layer onto the semiconductor substrate by a first plasma enhanced chemical vapor deposition (PECVD) process, and depositing the dielectric layer onto the adhesion layer by a second PECVD process. The first PECVD process is performed in a gaseous atmosphere comprising tetraethyl orthosilicate (TEOS) either in the absence of O2 or with O2 introduced into the process at a flow rate of 250 sccm or less.

    Method of deposition
    9.
    发明授权
    Method of deposition 有权

    公开(公告)号：US10601388B2

    公开(公告)日：2020-03-24

    申请号：US15286283

    申请日：2016-10-05

    Applicant: SPTS TECHNOLOGIES LIMITED

    Inventor： Stephen R Burgess ,  Rhonda Hyndman ,  Amit Rastogi ,  Scott Haymore ,  Constanine Fragos

    IPC: H02H3/02 ,  C23C14/00 ,  C23C14/34 ,  C23C14/06 ,  C23C14/14 ,  H03H9/02 ,  H03H3/02

    Abstract: A method is for depositing by pulsed DC reactive sputtering an additive containing aluminium nitride film containing at least one additive element selected from Sc, Y, Ti, Cr, Mg and Hf. The method includes depositing a first layer of the additive containing aluminium nitride film onto a film support by pulsed DC reactive sputtering with an electrical bias power applied to the film support. The method further includes depositing a second layer of the additive containing aluminium nitride film onto the first layer by pulsed DC reactive sputtering with no electrical bias power applied to the film support or with an electrical bias power applied to the film support which is lower than the electrical bias power applied during the sputter deposition of the first layer, where the second layer has the same composition as the first layer.

    Method of degassing
    10.
    发明授权
    Method of degassing 有权

    公开(公告)号：US09728432B2

    公开(公告)日：2017-08-08

    申请号：US14950879

    申请日：2015-11-24

    Applicant: SPTS TECHNOLOGIES LIMITED

    Inventor： Stephen R Burgess ,  Anthony Paul Wilby

    IPC: H01L21/67 ,  H01L21/677 ,  F24C7/04 ,  H01L21/324

    CPC classification number: H01L21/67276 ,  F24C7/04 ,  H01L21/324 ,  H01L21/67017 ,  H01L21/67109 ,  H01L21/6719 ,  H01L21/67748

    Abstract: A method of degassing semiconductor substrates includes sequentially loading a plurality of semiconductor substrates into a degas apparatus, and degassing the semiconductor substrates in parallel, the degassing of each semiconductor substrate commencing at a different time related to the time at which the semiconductor substrate was loaded into the degas apparatus. The method further includes unloading a semiconductor substrate from the degas apparatus when the semiconductor substrate has been degassed, while semiconductor substrates which were loaded later in the sequence are still being degassed. The degassing of the semiconductor substrates is performed at pressure of less than 10−4 Torr, and the degas apparatus is pumped continuously during the degassing of the semiconductor substrates.

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