公开(公告)号：US20220316065A1

公开(公告)日：2022-10-06

申请号：US17636808

申请日：2020-08-07

Applicant: TOKYO ELECTRON LIMITED

Inventor： Makoto WADA ,  Takashi MATSUMOTO ,  Masahito SUGIURA ,  Ryota IFUKU ,  Hirokazu UEDA

IPC: C23C16/511 ,  H01J37/32 ,  C23C16/27 ,  C23C16/455

Abstract: There is provided a processing apparatus for forming a film with a plasma. The processing apparatus comprises: a processing container, having a ceramic sprayed coating on an inner wall on which an antenna that radiates microwaves is arranged, configured to accommodate a substrate; a mounting table configured to mount the substrate in the processing container; and a controller configured to perform a precoating process of coating a surface of the ceramic sprayed coating with a first carbon film with a plasma of a first carbon-containing gas at a first pressure and a film forming process of forming a second carbon film on the substrate with a plasma of a second carbon-containing gas at a second pressure.

公开(公告)号：US20180350598A1

公开(公告)日：2018-12-06

申请号：US15997431

申请日：2018-06-04

Applicant: Tokyo Electron Limited

Inventor： Yoshimasa WATANABE ,  Masahiro OKA ,  Hirokazu UEDA

IPC: H01L21/033 ,  H01L21/02 ,  H01L21/3205 ,  C23C16/28 ,  C23C16/50 ,  C23C16/56

Abstract: In a method for removing a boron film formed on a substrate by CVD, heat treatment is performed on a part or all boron film in an oxidizing atmosphere and oxidizing a heat-treated portion. Then, an oxidized portion of the boron film is removed by water or aqueous solution containing electrolyte ions.

公开(公告)号：US20230230855A1

公开(公告)日：2023-07-20

申请号：US18096144

申请日：2023-01-12

Applicant: Tokyo Electron Limited

Inventor： Takeo NAKANO ,  Hirokazu UEDA ,  Mitsuaki IWASHITA ,  Ryuichi ASAKO ,  Naoki UMESHITA

IPC: H01L21/56 ,  H01L21/67

CPC classification number: H01L21/56 ,  H01L21/67126

Abstract: A substrate processing method includes: preparing a substrate having a metal film exposed on a surface of the substrate; and forming a film of an ionic self-association material on a surface of the metal film by supplying the ionic self-association material to the surface of the substrate, the ionic self-association material having fluidity with a hydrophilic group and a hydrophobic group.

公开(公告)号：US20230223251A1

公开(公告)日：2023-07-13

申请号：US17997158

申请日：2021-04-20

Applicant: Tokyo Electron Limited

Inventor： Hirokazu UEDA ,  Mitsuaki IWASHITA ,  Naoki UMESHITA ,  Yoji IIZUKA ,  Takashi HAYAKAWA ,  Kenji SEKIGUCHI ,  Koji AKIYAMA

IPC: H01L21/02 ,  H01L21/67 ,  H01L21/285

CPC classification number: H01L21/02307 ,  H01L21/6715 ,  H01L21/28556 ,  H01L21/0228

Abstract: In a method of manufacturing a semiconductor device, the method includes: applying a liquid material containing an ionic liquid on a substrate to form a protective film; transferring at an atmosphere the substrate on which the protective film is formed; and removing the protective film from the substrate that has been transferred at the atmosphere.

公开(公告)号：US20230061151A1

公开(公告)日：2023-03-02

申请号：US17820929

申请日：2022-08-19

Applicant: Tokyo Electron Limited

Inventor： Hideki YUASA ,  Hiroyuki IKUTA ,  Yutaka FUJINO ,  Makoto WADA ,  Hirokazu UEDA

IPC: C23C16/56 ,  C23C16/34

Abstract: A film forming method of forming a film on a substrate by using a film forming apparatus including a processing container, and a stage provided in an interior of the processing container to place the substrate thereon and in which aluminum is contained, includes: forming a film continuously on one substrate or on a plurality of substrates by supplying a gas for film formation to the interior of the processing container while heating the substrate placed on the stage; cleaning the interior of the processing container with a fluorine-containing gas in a state in which the substrate is unloaded from the processing container; and performing a post-process by generating plasma of an oxygen- and hydrogen-containing-gas in the interior of the processing container, wherein the forming the film, the cleaning the interior of the processing container, and the performing the post-process are repeatedly performed.

公开(公告)号：US20220223378A1

公开(公告)日：2022-07-14

申请号：US17277188

申请日：2019-07-17

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hiroyuki IKUTA ,  Hirokazu UEDA ,  Yutaka FUJINO

IPC: H01J37/32

Abstract: This plasma processing method comprises: arranging a substrate in a region away from a microwave plasma generation region in a chamber; setting the pressure in the chamber to 1 Torr or higher; introducing microwaves from a microwave plasma source in the chamber, generating microwave plasma by introducing a processing gas containing a reducing gas, and diffusing active species from the microwave plasma in the microwave plasma generation region to the substrate side; and applying high-frequency power to the substrate to generate cathode-coupled plasma near the substrate and attract ions near the substrate to the substrate.

公开(公告)号：US20190301019A1

公开(公告)日：2019-10-03

申请号：US16363531

申请日：2019-03-25

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yoshimasa WATANABE ,  Masahiro OKA ,  Jinwang LI ,  Yuuki YAMAMOTO ,  Hirokazu UEDA

IPC: C23C16/505 ,  C23C16/52 ,  C23C16/22

Abstract: There is provided a boron-based film forming method for forming a boron-based film mainly containing boron on a substrate. The method includes steps of loading a substrate into a chamber of a film forming apparatus for forming the boron-based film by plasma CVD using capacitively-coupled plasma, supplying a processing gas containing a boron-containing gas into the chamber, applying a high frequency power for generating the capacitively-coupled plasma and forming the boron-based film on the substrate by generating a plasma of the processing gas by the high frequency power. A film stress of the boron-based film is adjusted by the high frequency power in the applying step.

公开(公告)号：US20140179028A1

公开(公告)日：2014-06-26

申请号：US14136388

申请日：2013-12-20

Applicant: Tokyo Electron Limited

Inventor： Hirokazu UEDA ,  Masahiro OKA ,  Masahiro HORIGOME ,  Yuuki KOBAYASHI

IPC: H01L21/66 ,  C23C16/511

CPC classification number: H01J37/32192 ,  H01J21/22 ,  H01J37/3222 ,  H01J37/32449 ,  H01J37/32972 ,  H01J37/3299 ,  H01L21/22

Abstract: Disclosed is a plasma doping apparatus provided with a plasma generating mechanism. The plasma generating mechanism includes a microwave generator that generates microwave for plasma excitation, a dielectric window that transmits the microwave generated by the microwave generator into a processing container, and a radial line slot antenna formed with a plurality of slots. The radial line slot antenna radiates the microwave to the dielectric window. A control unit controls the plasma doping apparatus such that a doping gas and a gas for plasma excitation are supplied into the processing container by a gas supply unit in a state where the substrate is placed on a holding unit, and then plasma is generated by the plasma generating mechanism to perform doping on the substrate such that the concentration of the dopant implanted into the substrate is less than 1×1013 atoms/cm2.

Abstract translation: 公开了一种具有等离子体产生机构的等离子体掺杂装置。 等离子体产生机构包括产生用于等离子体激发的微波的微波发生器，将由微波发生器产生的微波传输到处理容器中的电介质窗和形成有多个槽的径向线缝隙天线。 径向线槽天线将微波辐射到电介质窗口。 控制单元控制等离子体掺杂装置，使得在将基板放置在保持单元上的状态下，通过气体供给单元将用于等离子体激发的掺杂气体和气体供应到处理容器中，然后通过 等离子体产生机构，以在衬底上进行掺杂，使得注入到衬底中的掺杂剂的浓度小于1×1013原子/ cm 2。

公开(公告)号：US20140094024A1

公开(公告)日：2014-04-03

申请号：US14039761

申请日：2013-09-27

Applicant: TOKYO ELECTRON LIMITED

Inventor： Masahiro OKA ,  Yuuki KOBAYASHI ,  Hirokazu UEDA ,  Masahiro HORIGOME

IPC: H01L21/22 ,  H01L21/67

CPC classification number: H01L21/22 ,  H01L21/2236 ,  H01L21/67011 ,  H01L21/67109 ,  H01L21/6831 ,  H01L29/66803

Abstract: Disclosed is a plasma doping apparatus including a processing chamber, a substrate holding unit, a plasma generating mechanism, a pressure control mechanism, a bias power supply mechanism, and a control unit. The control unit controls the pressure within the processing chamber to be a first pressure and controls the bias power to be supplied to the holding unit is to be a first bias power for a first plasma process. The control unit also controls the pressure within the processing chamber to be a second pressure which is higher than the first pressure, and controls the bias power to be supplied to the holding unit to be a second bias power which is lower than the first bias power for a second plasma process.

Abstract translation: 公开了一种等离子体掺杂装置，其包括处理室，基板保持单元，等离子体产生机构，压力控制机构，偏置供电机构和控制单元。 控制单元将处理室内的压力控制为第一压力，并且控制向保持单元供应的偏置功率为第一等离子体处理的第一偏置功率。 控制单元还将处理室内的压力控制为高于第一压力的第二压力，并且将提供给保持单元的偏置功率控制为低于第一偏置功率的第二偏置功率 用于第二等离子体工艺。

公开(公告)号：US20240200193A1

公开(公告)日：2024-06-20

申请号：US18539187

申请日：2023-12-13

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hiroaki ASHIZAWA ,  Hirokazu UEDA

IPC: C23C16/56 ,  C23C16/40

CPC classification number: C23C16/56 ,  C23C16/405 ,  H01L21/02189

Abstract: A method of performing a cleaning to remove a deposition film deposited during a substrate processing, includes: forming a heating film on an upper surface of the deposition film before performing the cleaning by supplying a cleaning gas to the deposition film deposited on a surface of a device arranged in a space where the substrate processing is performed, wherein the heating film undergoes a temperature increase due to a reaction heat generated when being removed by a reaction with the cleaning gas; supplying the cleaning gas to the heating film to remove the heating film and heating the deposition film on a lower surface of the heating film by the temperature increase; and performing the cleaning by supplying the cleaning gas to the deposition film having an increased temperature due to the heating the deposition film, after the heating film is removed.