公开(公告)号：US11943527B2

公开(公告)日：2024-03-26

申请号：US18311297

申请日：2023-05-03

Applicant: CANON KABUSHIKI KAISHA

Inventor： Yosuke Nishide ,  Yu Maehashi ,  Masahiro Kobayashi ,  Katsuyuki Hoshino ,  Akira Okita ,  Takeshi Ichikawa

IPC: H04N23/57 ,  G06F1/16 ,  G09F9/30 ,  H01L27/14 ,  H01L27/144 ,  H01L27/146 ,  H01L27/15 ,  H01L31/02 ,  H01L31/0216 ,  H01L31/10 ,  H01L31/147 ,  H04N23/56 ,  H04N25/70 ,  H05B33/02 ,  H05B33/12 ,  H05B33/14 ,  H10K50/00 ,  H10K59/00

CPC classification number: H04N23/57 ,  G06F1/163 ,  G09F9/30 ,  H01L27/14 ,  H01L27/144 ,  H01L27/146 ,  H01L27/15 ,  H01L31/02019 ,  H01L31/02164 ,  H01L31/10 ,  H01L31/147 ,  H04N23/56 ,  H04N25/70 ,  H05B33/02 ,  H05B33/12 ,  H05B33/14 ,  H10K50/00 ,  H10K59/00

Abstract: An image capturing and display apparatus comprises a plurality of photoelectric conversion elements for converting incident light from the outside of the image capturing and display apparatus to electrical charge signals, and a plurality of light-emitting elements for emitting light of an intensity corresponding to the electrical charge signals acquired by the plurality of photoelectric conversion elements. A pixel region is defined as a region in which the plurality of photoelectric conversion elements are arranged in an array. Signal paths for transmitting signals from the plurality of photoelectric conversion elements to the plurality of light-emitting elements lie within the pixel region.

公开(公告)号：US11710708B2

公开(公告)日：2023-07-25

申请号：US17406541

申请日：2021-08-19

Applicant: Raytheon Company

Inventor： Matthew DeJarld ,  Jeffrey R. LaRoche ,  Susan C. Trulli

IPC: H01L23/552 ,  H01L27/144

CPC classification number: H01L23/552 ,  H01L27/144

Abstract: An integrated circuit structure including a substrate having an upper surface; a gallium nitride layer disposed on the upper surface of the substrate; and a photoconductive semiconductor switch laterally disposed alongside a transistor on the gallium nitride layer integrated into the integrated circuit structure; an EMF shield enclosing the substrate, the gallium nitride layer and the photoconductive semiconductor switch laterally disposed alongside the transistor on the gallium nitride layer integrated into the integrated circuit structure; and a signal line electronically coupled with the photoconductive semiconductor switch, the signal line penetrating the EMF shield.

公开(公告)号：US20190245000A1

公开(公告)日：2019-08-08

申请号：US16341964

申请日：2017-07-05

Applicant: RIGAKU CORPORATION

Inventor： TAKUTO SAKUMURA ,  YASUKAZU NAKAYE ,  KAZUYUKI MATSUSHITA ,  SATOSHI MIKUSU

IPC: H01L27/146 ,  H04N5/32 ,  G01T7/00

CPC classification number: H01L27/14643 ,  G01T7/00 ,  G01T7/005 ,  H01L27/144 ,  H01L27/146 ,  H01L27/14605 ,  H04N5/32

Abstract: A detector capable of securing space for arranging pixels in the vicinity of edges of adjacent readout chips according to design of counting circuits. A 2-dimensional hybrid pixel array detector configured to detect radiation rays, including a detection unit configured to detect the radiation rays incident in a region of each pixel 115, and a plurality of the readout chips including counting circuits 121 respectively connected to each of the pixels 115, the counting circuits 121 having a smaller set pitch than the pixels 115 along a certain direction in a detection surface. The regions occupied by the pixels and counting circuits corresponding to the pixels overlapping at least partially, and the connection being made in the overlapping regions.

公开(公告)号：US20190214252A1

公开(公告)日：2019-07-11

申请号：US16272027

申请日：2019-02-11

Applicant: FUJITSU LIMITED

Inventor： Shigekazu Okumura ,  Shuichi Tomabechi ,  Ryo Suzuki

IPC: H01L21/02 ,  G01J1/04 ,  G01J1/44 ,  H01L27/146 ,  H01L31/0304 ,  H01L31/0392 ,  H01L31/0352 ,  H01L31/18 ,  H01L33/30 ,  H01L33/06 ,  H01L33/12 ,  H01L33/00 ,  H01L29/205 ,  H01L29/15 ,  H01L29/778 ,  H01L21/28 ,  H01L29/66 ,  H01L35/18 ,  H01L35/26 ,  H01L35/32 ,  H01L35/34 ,  H01S5/343 ,  H01S5/22

CPC classification number: H01L21/02502 ,  G01J1/02 ,  G01J1/0407 ,  G01J1/44 ,  H01L21/02398 ,  H01L21/02466 ,  H01L21/02546 ,  H01L21/02549 ,  H01L21/02631 ,  H01L21/20 ,  H01L21/203 ,  H01L21/28264 ,  H01L27/144 ,  H01L27/146 ,  H01L27/1467 ,  H01L27/14694 ,  H01L29/157 ,  H01L29/205 ,  H01L29/66462 ,  H01L29/7785 ,  H01L29/78 ,  H01L31/0304 ,  H01L31/035236 ,  H01L31/0392 ,  H01L31/10 ,  H01L31/184 ,  H01L33/00 ,  H01L33/0062 ,  H01L33/06 ,  H01L33/12 ,  H01L33/30 ,  H01L35/18 ,  H01L35/26 ,  H01L35/32 ,  H01L35/34 ,  H01S5/22 ,  H01S5/343

Abstract: A semiconductor crystal substrate includes a crystal substrate that is formed of a material including GaSb or InAs, a first buffer layer that is formed on the crystal substrate and formed of a material including GaSb, the first buffer layer having n-type conductivity, and a second buffer layer that is formed on the first buffer layer and formed of a material including GaSb, the second buffer layer having p-type conductivity.

公开(公告)号：US20190035748A1

公开(公告)日：2019-01-31

申请号：US16138971

申请日：2018-09-22

Applicant: International Business Machines Corporation

Inventor： Ali Afzali-Ardakani ,  Joel P. de Souza ,  Bahman Hekmatshoartabari ,  Daniel M. Kuchta ,  Devendra K. Sadana

IPC: H01L23/00 ,  H01L31/20 ,  H01L31/14 ,  H01L31/112 ,  H01L31/0376 ,  H01L31/024 ,  H01L31/0224 ,  H01L21/762 ,  H01L31/0203 ,  H01L31/02 ,  H01L31/0216 ,  H01L27/144 ,  H01L29/49

CPC classification number: H01L23/573 ,  H01L21/762 ,  H01L23/576 ,  H01L27/144 ,  H01L29/4916 ,  H01L31/02019 ,  H01L31/0203 ,  H01L31/02161 ,  H01L31/022408 ,  H01L31/024 ,  H01L31/03762 ,  H01L31/1129 ,  H01L31/143 ,  H01L31/202

Abstract: Silicon-based or other electronic circuitry is dissolved or otherwise disabled by reactive materials within a semiconductor chip should the chip or a device containing the chip be subjected to tampering. Triggering circuits containing normally-OFF heterojunction field-effect photo-transistors are configured to cause reactions of the reactive materials within the chips upon exposure to light. The normally-OFF heterojunction field-effect photo-transistors can be fabricated during back-end-of-line processing through the use of polysilicon channel material, amorphous hydrogenated silicon gate contacts, hydrogenated crystalline silicon source/drain contacts, or other materials that allow processing at low temperatures.

公开(公告)号：US20180348381A1

公开(公告)日：2018-12-06

申请号：US16060709

申请日：2016-12-02

Applicant: Sony Corporation

Inventor： Toshiyuki Nishihara ,  Kenichi Okumura

IPC: G01T1/20 ,  H04N5/378 ,  H04N5/369 ,  H04N5/04 ,  H01L27/146

CPC classification number: G01T1/20 ,  H01L27/144 ,  H01L27/146 ,  H04N5/374 ,  H04N5/378

Abstract: The present technology relates to an imaging element and a driving method, and an electronic device that enable stable driving with low voltage and low power consumption and furthermore make it possible to ensure a time resolution of detection. A light detector includes a pixel array section including a plurality of first pixels and a second pixel. The first pixel includes a photoelectric conversion section that photoelectrically converts incident light, a floating diffusion section that generates a voltage in accordance with the amount of charge carriers obtained by photoelectric conversion, and a transfer section that transfers charge carriers from the photoelectric conversion section to the floating diffusion section; the readout of a signal is performed intermittently from the first pixel. Further, the output of the second pixel is monitored continuously to detect the incidence of light. The present technology can be applied to a radiation counter.

公开(公告)号：US20180301569A1

公开(公告)日：2018-10-18

申请号：US15486849

申请日：2017-04-13

Applicant: GLOBALFOUNDRIES INC.

Inventor： Ajey P. JACOB

IPC: H01L31/0232 ,  H01L31/105 ,  H01L31/18 ,  H01L31/028 ,  H01L31/0352 ,  G02B6/122

CPC classification number: H01L31/02327 ,  G02B6/12004 ,  G02B2006/12061 ,  G02B2006/12097 ,  G02B2006/12123 ,  H01L27/144 ,  H01L27/1446 ,  H01L31/03529 ,  H01L31/03921 ,  H01L31/105 ,  H01L31/1804

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to graphene detectors integrated with optical waveguide structures and methods of manufacture. The structure includes a plurality of non-planar fin structures composed of substrate material, and a non-planar sheet of graphene material extending entirely over each of the plurality of non-planar fin structures.

公开(公告)号：US10084006B2

公开(公告)日：2018-09-25

申请号：US15513109

申请日：2015-07-28

Applicant: SHARP KABUSHIKI KAISHA

Inventor： Masaaki Uchihashi ,  Kazuhiro Natsuaki ,  Masayo Uchida ,  Takahiro Takimoto

IPC: H01L27/146 ,  H01L31/101

CPC classification number: H01L27/14643 ,  G01J1/0488 ,  G01J1/1626 ,  G01J1/42 ,  G01J1/4228 ,  G01J1/429 ,  G01J2001/1657 ,  H01L27/144 ,  H01L27/1446 ,  H01L27/14625 ,  H01L31/02165 ,  H01L31/101 ,  H01L31/1013

Abstract: Provided are an optical receiver that can realize a reduction in the variation of sensitivity in the ultraviolet light region and a reduction in noise in the visible light region and the infrared light region, a portable electronic device, and a method of producing an optical receiver. The first light-receiving device (PD1) and the second light-receiving device (PD2) of the optical receiver (1) are each constituted by forming a second conductivity-type N-type well layer (N_well) on a first conductivity-type P-type substrate (P_sub), forming a first conductivity-type P-type well layer (P_well) in the N-type well layer (N_well), and forming a second conductivity-type N-type diffusion layer (N) in the P-type well layer (P_well). The P-type substrate P_sub, the N-type well layer (N_well), and the P-type well layer (P_well) are electrically at the same potential or are short-circuited.

公开(公告)号：US10032730B2

公开(公告)日：2018-07-24

申请号：US15390626

申请日：2016-12-26

Applicant: International Business Machines Corporation

Inventor： Ali Afzali-Ardakani ,  Joel P. de Souza ,  Bahman Hekmatshoartabari ,  Daniel M. Kuchta ,  Devendra K. Sadana

IPC: H01L21/00 ,  H01L23/00 ,  H01L31/0203 ,  H01L31/02 ,  H01L31/112 ,  H01L31/024 ,  H01L31/14 ,  H01L31/0224 ,  H01L31/0376 ,  H01L31/0216 ,  H01L31/20

CPC classification number: H01L23/573 ,  H01L21/762 ,  H01L23/576 ,  H01L27/144 ,  H01L29/4916 ,  H01L31/02019 ,  H01L31/0203 ,  H01L31/02161 ,  H01L31/022408 ,  H01L31/024 ,  H01L31/03762 ,  H01L31/1129 ,  H01L31/143 ,  H01L31/202

Abstract: Silicon-based or other electronic circuitry is dissolved or otherwise disabled by reactive materials within a semiconductor chip should the chip or a device containing the chip be subjected to tampering. Triggering circuits containing normally-OFF heterojunction field-effect photo-transistors are configured to cause reactions of the reactive materials within the chips upon exposure to light. The normally-OFF heterojunction field-effect photo-transistors can be fabricated during back-end-of-line processing through the use of polysilicon channel material, amorphous hydrogenated silicon gate contacts, hydrogenated crystalline silicon source/drain contacts, or other materials that allow processing at low temperatures.

公开(公告)号：US20180114809A1

公开(公告)日：2018-04-26

申请号：US15562965

申请日：2016-03-31

Applicant: National University Corporation Shizuoka University

Inventor： Shoji KAWAHITO

IPC: H01L27/146 ,  H04N5/3745 ,  H04N5/361

CPC classification number: H01L27/14638 ,  G01S7/481 ,  H01L27/144 ,  H01L27/146 ,  H01L27/14605 ,  H01L27/14623 ,  H01L27/14643 ,  H01L31/10 ,  H04N5/361 ,  H04N5/369 ,  H04N5/374 ,  H04N5/3745

Abstract: A range sensor includes: an n-type surface-buried region selectively buried in an upper portion of a pixel layer to implement a photodiode and extending from a light-receiving area toward plural portions shielded by a shielding plate along the upper portion of the pixel layer so as to provide a plurality of branches; n-type charge-accumulation regions having a higher impurity concentration than the surface-buried region; a plurality of transfer gate electrodes provided adjacent to the charge-accumulation regions; and an n-type guide region having a higher impurity concentration than the surface-buried region and a lower impurity concentration than the charge-accumulation regions, and provided with one end below an aperture of the shielding plate and other ends extending to a part of the respective transfer gate electrodes.