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公开(公告)号：US07221690B2
公开(公告)日：2007-05-22
申请号：US10643944
申请日：2003-08-20
IPC分类号： H01S3/04
CPC分类号： B82Y20/00 , H01S5/22 , H01S5/3072 , H01S5/321 , H01S5/3211 , H01S5/343 , H01S5/34333 , H01S2304/12
摘要： This specification relates to a semiconductor laser in which an n-type semiconductor layer (13), an active layer (101), and a p-type semiconductor layer (24) are stacked in this order on a substrate (11), the active layer (101) comprising a well layer composed of InGaN, the semiconductor laser comprising an intermediate layer (21) sandwiched between the active layer (101) and the p-type semiconductor layer (24), and the intermediate layer including no intentionally added impurities and being composed of a gallium nitride-based compound semiconductor. This semiconductor laser has an extended lifetime under high optical output power conditions.
摘要翻译： 本说明书涉及其中n型半导体层（13），有源层（101）和p型半导体层（24）依次层叠在基板（11）上的半导体激光器， 包括由InGaN构成的阱层的层（101），所述半导体激光器包括夹在有源层（101）和p型半导体层（24）之间的中间层（21），所述中间层不包括有意添加的杂质 并且由氮化镓系化合物半导体构成。 该半导体激光器在高光输出功率条件下具有延长的寿命。
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公开(公告)号：US20060049433A1
公开(公告)日：2006-03-09
申请号：US10537868
申请日：2004-04-06
IPC分类号： H01L31/112
CPC分类号： B82Y20/00 , H01S5/0213 , H01S5/2201 , H01S5/2206 , H01S5/2216 , H01S5/2231 , H01S5/305 , H01S5/34333 , H01S2304/04 , H01S2304/12
摘要： A method for fabricating a semiconductor light-emitting element according to the present invention includes the steps of (A) providing a striped masking layer on a first Group III-V compound semiconductor, (B) selectively growing a second Group III-V compound semiconductor over the entire surface of the first Group III-V compound semiconductor except a portion covered with the masking layer, thereby forming a current confining layer that has a striped opening defined by the masking layer, (C) selectively removing the masking layer, and (D) growing a third Group III-V compound semiconductor to cover the surface of the first Group III-V compound semiconductor, which is exposed through the striped opening, and the surface of the current confining layer.
摘要翻译： 根据本发明的制造半导体发光元件的方法包括以下步骤：（A）在第一III-V族化合物半导体上提供条纹掩模层，（B）选择性地生长第二III-V族化合物半导体 在除了被掩模层覆盖的部分之外的第一III-V族化合物半导体的整个表面上，由此形成具有由掩模层限定的条纹开口的电流限制层，（C）选择性地去除掩模层，和 D）生长第三组III-V族化合物半导体以覆盖通过条纹开口暴露的第一III-V族化合物半导体的表面和电流限制层的表面。
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公开(公告)号：US06977186B2
公开(公告)日：2005-12-20
申请号：US10740765
申请日：2003-12-22
申请人： Yoshiaki Hasegawa , Gaku Sugahara , Ryoko Miyanaga
发明人： Yoshiaki Hasegawa , Gaku Sugahara , Ryoko Miyanaga
IPC分类号： H01L21/00 , H01L21/205 , H01L21/302 , H01L21/306 , H01L21/308 , H01L21/461 , H01L33/00
CPC分类号： H01L21/30612 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02661 , H01L21/3083 , H01L33/007
摘要： A method for manufacturing a semiconductor includes: a first step of forming an etching stop layer on a first semiconductor layer; and a second step of forming a second semiconductor layer made of a group III–V compound semiconductor on the etching stop layer. An etching rate for the etching stop layer by dry etching is less than an etching rate for the second semiconductor layer.
摘要翻译： 一种制造半导体的方法包括：在第一半导体层上形成蚀刻停止层的第一步骤; 以及在蚀刻停止层上形成由III-V族化合物半导体制成的第二半导体层的第二步骤。 通过干蚀刻蚀刻停止层的蚀刻速率小于第二半导体层的蚀刻速率。
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公开(公告)号：US20050269584A1
公开(公告)日：2005-12-08
申请号：US11084526
申请日：2005-03-21
CPC分类号： B82Y20/00 , H01S5/0425 , H01S5/2004 , H01S5/22 , H01S5/2205 , H01S5/34333 , H01S2301/173
摘要： A nitride semiconductor light-emitting device is provided including: a substrate made of a nitride semiconductor; a semiconductor layer made of a nitride semiconductor containing a p-type impurity, the semiconductor layer being formed as contacting an upper surface of the substrate; a first cladding layer made of a nitride semiconductor containing an impurity of a first conductivity type, the first cladding layer being formed on the semiconductor layer; an active layer formed on the first cladding layer; and a second cladding layer made of a nitride semiconductor containing an impurity of a second conductivity type, the second cladding layer being formed on the active layer.
摘要翻译： 提供了一种氮化物半导体发光器件，包括：由氮化物半导体制成的衬底; 由包含p型杂质的氮化物半导体制成的半导体层，所述半导体层形成为与所述衬底的上表面接触; 由包含第一导电类型的杂质的氮化物半导体制成的第一包层，所述第一包层形成在所述半导体层上; 形成在所述第一包层上的有源层; 以及由包含第二导电类型的杂质的氮化物半导体制成的第二覆层，所述第二覆层形成在所述有源层上。
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公开(公告)号：US20050156190A1
公开(公告)日：2005-07-21
申请号：US11081664
申请日：2005-03-17
IPC分类号： H01L27/15 , H01L29/22 , H01L29/26 , H01L33/00 , H01S5/02 , H01S5/10 , H01S5/16 , H01S5/22 , H01S5/32 , H01S5/323 , H01S5/343
CPC分类号： B82Y20/00 , H01S5/0207 , H01S5/1039 , H01S5/164 , H01S5/22 , H01S5/3203 , H01S5/32341 , H01S5/34333 , H01S2304/12
摘要： A method for fabricating a semiconductor light emitting device, the method comprising the steps of: repeatedly forming, on a first nitride based Group III-V compound semiconductor layer, stripe-shaped masking films in a predetermined cycle in a width-wise direction thereof, each masking film comprising first width sections having a predetermined width and second width sections which are adjacent to both ends of each first width section and have a greater width than the predetermined width; selectively growing a second nitride based Group III-V compound semiconductor layer from exposed parts of a surface of the first nitride based Group III-V compound semiconductor so as to cover the masking films and the exposed parts, each of the exposed parts being located between the masking films; and layering a semiconductor laser structure on the second nitride based Group III-V compound semiconductor layer, the semiconductor laser structure including an active layer which substantially extends in a length-wise direction of the masking films and level difference portions which extend in the width-wise direction by a structure in which a portion located above the second width sections is lower than a portion located above the first width sections.
摘要翻译： 一种制造半导体发光器件的方法，所述方法包括以下步骤：在第一氮化物基III-V族化合物半导体层上，沿其宽度方向以预定的周期重复形成条状掩模膜， 每个掩模膜包括具有预定宽度的第一宽度部分和与每个第一宽度部分的两端相邻并且具有比预定宽度更大的宽度的第二宽度部分; 从第一氮化物基III-V族化合物半导体的表面的暴露部分选择性地生长第二氮化物基III-V族化合物半导体层，以覆盖掩模膜和暴露部分，每个暴露部分位于 掩模膜; 并且在所述第二氮化物基III-V族化合物半导体层上分层半导体激光器结构，所述半导体激光器结构包括基本沿着所述掩模膜的长度方向延伸的有源层和在所述宽度方向上延伸的电平差部分， 通过其中位于第二宽度部分上方的部分低于位于第一宽度部分之上的部分的结构的方向。
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公开(公告)号：US20050116614A1
公开(公告)日：2005-06-02
申请号：US10993812
申请日：2004-11-19
申请人： Isao Kidoguch , Yasuo Kitaoka , Hiroyoshi Yajima , Keiji Ito , Akihiko Ishibashi , Yoshiaki Hasegawa , Kiminori Mizuuchi
发明人： Isao Kidoguch , Yasuo Kitaoka , Hiroyoshi Yajima , Keiji Ito , Akihiko Ishibashi , Yoshiaki Hasegawa , Kiminori Mizuuchi
CPC分类号： H01S5/02204 , H01S5/02212 , H01S5/02296
摘要： A light source of the present invention includes: a semiconductor light emitting device which has a light emitting face and emits light from part of the light emitting face; a container which has a light transmitting window for transmitting the light and accommodates the semiconductor light emitting device; and a gettering portion for performing gettering of a material containing at least one of carbon and silicon. The gettering portion is positioned, in the container, in a region other than the part of the light emitting face of the semiconductor light emitting device.
摘要翻译： 本发明的光源包括：半导体发光器件，其具有发光面并从该发光面的一部分发射光; 容器，其具有用于传输光的透光窗并容纳半导体发光器件; 以及用于吸收含有至少一种碳和硅的材料的吸气部分。 吸气部位于容器内，位于半导体发光元件的发光面以外的区域。
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公开(公告)号：US20050093565A1
公开(公告)日：2005-05-05
申请号：US10968215
申请日：2004-10-20
申请人： Masayoshi Okamoto , Yoshiaki Hasegawa , Yasuhiro Motoyama , Hideyuki Matsumoto , Shingo Yorisaki , Akio Hasebe , Ryuji Shibata , Yasunori Narizuka , Akira Yabushita , Toshiyuki Majima
发明人： Masayoshi Okamoto , Yoshiaki Hasegawa , Yasuhiro Motoyama , Hideyuki Matsumoto , Shingo Yorisaki , Akio Hasebe , Ryuji Shibata , Yasunori Narizuka , Akira Yabushita , Toshiyuki Majima
IPC分类号： G01R1/06 , G01R1/067 , G01R1/073 , G01R3/00 , G01R31/28 , H01L21/66 , H01L21/822 , H01L27/04 , G01R31/26
CPC分类号： H01L22/14 , G01R1/06711 , G01R1/06744 , G01R1/07307 , G01R3/00 , H01L2224/05553 , H01L2224/05554 , H01L2224/0603 , H01L2224/45144 , H01L2224/48453 , H01L2224/48463 , H01L2224/49171 , H01L2924/014 , H01L2924/3011 , H01L2924/00
摘要： To permit electrical testing of a semiconductor integrated circuit device having test pads disposed at narrow pitches probes in a pyramid or trapezoidal pyramid form are formed from metal films formed by stacking a rhodium film and a nickel film successively. Via through-holes are formed in a polyimide film between interconnects and the metal films, and the interconnects are electrically connected to the metal films. A plane pattern of one of the metal films equipped with one probe and through-hole is obtained by turning a plane pattern of the other metal film equipped with the other probe and through-hole through a predetermined angle.
摘要翻译： 为了允许具有金字塔或梯形金字塔形式的窄间距探针设置的测试焊盘的半导体集成电路器件进行电气测试，是由依次层叠铑膜和镍膜而形成的金属膜形成的。 在互连和金属膜之间的聚酰亚胺膜中形成通孔，并且互连电连接到金属膜。 通过将配备有另一个探针和通孔的另一金属膜的平面图案转过预定角度，获得装配有一个探针和通孔的金属膜之一的平面图案。
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公开(公告)号：US06884648B2
公开(公告)日：2005-04-26
申请号：US10687647
申请日：2003-10-20
IPC分类号： H01L27/15 , H01L29/22 , H01L29/26 , H01L33/00 , H01S5/02 , H01S5/10 , H01S5/16 , H01S5/22 , H01S5/32 , H01S5/323 , H01S5/343 , H01L21/00
CPC分类号： B82Y20/00 , H01S5/0207 , H01S5/1039 , H01S5/164 , H01S5/22 , H01S5/3203 , H01S5/32341 , H01S5/34333 , H01S2304/12
摘要： A method for fabricating a semiconductor light emitting device, the method comprising the steps of: repeatedly forming, on a first nitride based Group III-V compound semiconductor layer, stripe-shaped masking films in a predetermined cycle in a width-wise direction thereof, each masking film comprising first width sections having a predetermined width and second width sections which are adjacent to both ends of each first width section and have a greater width than the predetermined width; selectively growing a second nitride based Group III-V compound semiconductor layer from exposed parts of a surface of the first nitride based Group III-V compound semiconductor so as to cover the masking films and the exposed parts, each of the exposed parts being located between the masking films; and layering a semiconductor laser structure on the second nitride based Group III-V compound semiconductor layer, the semiconductor laser structure including an active layer which substantially extends in a length-wise direction of the masking films and level difference portions which extend in the width-wise direction by a structure in which a portion located above the second width sections is lower than a portion located above the first width sections.
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公开(公告)号：US06662204B2
公开(公告)日：2003-12-09
申请号：US10173624
申请日：2002-06-19
IPC分类号： G06F900
CPC分类号： G06F9/4843 , G06F11/3409 , G06F2201/81 , G06F2201/86 , G06F2201/88
摘要： The executing threads in CPU 100˜103 are checked at random intervals in a specified range by interrupt execution modules 109˜112, the results of the checks are stored in executing thread memory areas 113˜116 and values of counters 117˜120 that are corresponding to the executing threads are incremented. If the values of the counters 117˜120 exceed specified values, applicable threads are judged to be operating abnormally and priorities of the applicable threads are lowered so as to prevent the abnormal operations of the threads.
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100.发明授权公开(公告)号：US06653662B2
公开(公告)日：2003-11-25
申请号：US09984913
申请日：2001-10-31
IPC分类号： H01S500
CPC分类号： H01S5/0425 , H01L27/15 , H01S5/0422 , H01S5/0625 , H01S5/0658
摘要： The semiconductor light-emitting device of the present invention includes a first semiconductor layer of a first conductivity type formed substantially in a uniform thickness on a substrate and a second semiconductor layer of a second conductivity type formed substantially in a uniform thickness on the first semiconductor layer. The device further includes an active layer, formed substantially in a uniform thickness between the first semiconductor layer and the second semiconductor layer, for generating emission light. The device also comprises a first electrode for supplying a drive current to the first semiconductor layer and a second electrode for supplying a drive current to the second semiconductor layer. The device is adapted that the first or second electrode is a divided electrode comprising a plurality of conductive members spaced apart from each other.
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