公开(公告)号：US20070111433A1

公开(公告)日：2007-05-17

申请号：US11594726

申请日：2006-11-09

申请人： Shinichi Hirasawa ,  Atsushi Shigeta ,  Kiyotaka Miyano ,  Yukiteru Matsui ,  Takeshi Nishioka ,  Hiroyuki Yano

发明人： Shinichi Hirasawa ,  Atsushi Shigeta ,  Kiyotaka Miyano ,  Yukiteru Matsui ,  Takeshi Nishioka ,  Hiroyuki Yano

IPC分类号： H01L21/8242

CPC分类号： H01L27/105 ,  H01L27/11526 ,  H01L27/11543 ,  H01L29/40114 ,  H01L29/66825

摘要： A method for manufacturing a semiconductor device comprises forming a first silicon layer above a semiconductor substrate; forming a stopper layer on said first silicon layer; partially removing said stopper layer and said first silicon layer above said semiconductor substrate to form a plurality of trenches; forming an insulating layer on said stopper layer with inside of said trenches; partially removing said insulating layer to expose said stopper layer; after partially removing said insulating layer, removing said stopper layer to expose said first silicon layer; selectively growing second silicon layer on said exposed first silicon layer; nonselectively growing a third silicon layer on said second silicon layer; and polishing at least a surface of said third silicon layer by performing chemical mechanical polishing.

摘要翻译： 一种制造半导体器件的方法包括在半导体衬底上形成第一硅层; 在所述第一硅层上形成阻挡层; 部分地去除所述半导体衬底之上的所述阻挡层和所述第一硅层以形成多个沟槽; 在所述沟槽的内部在所述阻挡层上形成绝缘层; 部分地去除所述绝缘层以暴露所述阻挡层; 在部分地去除所述绝缘层之后，去除所述阻挡层以露出所述第一硅层; 在所述暴露的第一硅层上选择性地生长第二硅层; 在所述第二硅层上非选择地生长第三硅层; 以及通过进行化学机械抛光来抛光所述第三硅层的至少一个表面。

公开(公告)号：US20060197055A1

公开(公告)日：2006-09-07

申请号：US11407945

申请日：2006-04-21

申请人： Gaku Minamihaba ,  Yukiteru Matsui ,  Hiroyuki Yano

发明人： Gaku Minamihaba ,  Yukiteru Matsui ,  Hiroyuki Yano

IPC分类号： C09K13/00

CPC分类号： H01L21/3212 ,  C09G1/02

摘要： Disclosed is a CMP slurry comprising a first colloidal particle having a primary particle diameter ranging from 5 nm to 30 nm and an average particle diameter of d1, the first colloidal particle being incorporated in an amount of w1 by weight and a second colloidal particle having a primary particle diameter larger than that of the first colloidal particle and an average particle diameter of d2, the second colloidal particle being formed of the same material as that of the first colloidal particle and incorporated in an amount of w2 by weight, wherein d1, d2, w1 and w2 are selected to concurrently meet following conditions (A) and (B) excluding situations where d1, d2, w1 and w2 concurrently meet following conditions (C) and (D): 3≦d2/d1≦8   (A) 0.7≦5 w1/(w1+w2)≦0.97   (B) 3≦d2/d1≦5   (C) 0.7≦w1/(w1+w2)≦0.9   (D)

摘要翻译： 公开了一种CMP浆料，其包含一次粒径为5nm〜30nm，平均粒径为d 1的第一胶体粒子，第一胶体粒子的重量为w 1，第二胶体粒子 其第一粒径大于第一胶体粒子的一次粒径，平均粒径为d 2，第二胶体粒子由与第一胶体粒子相同的材料形成，w 2的重量比， 其中d 1，d 2，w 1和w 2同时满足以下条件（A）和（B），不包括d 1，d 2，w 1和w 2同时满足以下条件（C）和（D ）：<？in-line-formula description =“In-line Formulas”end =“lead”？> 3 <= d 2 / d 1 <= 8（A）<？in-line-formula description = 线公式“end =”tail“？> <？in-line-formula description =”In-line Formulas“end =”lead“？> 0.7 <= 5 w 1 /（w 1 + w 2）<= 0.97 B）<？in-li ne-formula description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line Formulas”end =“lead”？> 3 <= d 2 / d 1 <= 5（C）<？in-line-formula description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line Formulas”end =“lead”？> = w 1 /（w 1 + w 2）<= 0.9（D）<？in-line-formula description =“In-line Formulas”end =“tail”？>

公开(公告)号：US20060175296A1

公开(公告)日：2006-08-10

申请号：US11296483

申请日：2005-12-08

申请人： Dai Fukushima ,  Gaku Minamihaba ,  Hiroyuki Yano

发明人： Dai Fukushima ,  Gaku Minamihaba ,  Hiroyuki Yano

IPC分类号： C03C15/00 ,  B44C1/22 ,  H01L21/302 ,  C23F1/00

CPC分类号： B24B37/042 ,  H01L21/3212 ,  H01L21/7684

摘要： A method for manufacturing a semiconductor device is provided, which includes depositing a conductive film above an insulating film formed above a semiconductor substrate and having a recess, thereby forming a treating film, polishing the treating film while feeding a first chemical solution containing abrasive particles and a second chemical solution containing an oxidizing agent over a polishing pad, the treating film being contacted with the polishing pad at a first load, and subsequent to the polishing, subjecting a surface of the treating film to a chemical-polishing by continuing the feeding of the first chemical solution over the polishing pad while suspending the feeding of the second chemical solution, the treating film being contacted with the polishing pad at a second load which is smaller than the first load.

摘要翻译： 提供了一种制造半导体器件的方法，其包括在半导体衬底上形成的绝缘膜上方形成导电膜并具有凹陷，从而形成处理膜，同时在加入含有磨料颗粒的第一化学溶液的同时抛光处理膜， 在抛光垫上含有氧化剂的第二化学溶液，所述处理膜在第一次负载下与抛光垫接触，并且在抛光之后，通过继续进行抛光来对处理膜的表面进行化学抛光 在悬浮第二化学溶液的进料的同时在抛光垫上方的第一化学溶液，处理膜以小于第一载荷的第二载荷与抛光垫接触。

公开(公告)号：US20060012047A1

公开(公告)日：2006-01-19

申请号：US11142235

申请日：2005-06-02

申请人： Nobuyuki Kurashima ,  Gaku Minamihaba ,  Hiroyuki Yano

发明人： Nobuyuki Kurashima ,  Gaku Minamihaba ,  Hiroyuki Yano

IPC分类号： H01L23/52

CPC分类号： H01L21/02074 ,  H01L21/76826 ,  H01L21/76835 ,  H01L21/7684

摘要： Disclosed is a method for manufacturing a semiconductor device comprising forming a hydrophobic interlayer insulating film having a relative dielectric constant of 3.5 or less above a semiconductor substrate, forming a recess in the interlayer insulating film, depositing a conductive material above the interlayer insulating film having the recess to form a conductive layer, selectively removing the conductive material deposited above the interlayer insulating film by polishing to expose a surface of the interlayer insulating film while leaving the conductive material in the recess, and subjecting the surface of the interlayer insulating film having the recess filled with the conductive material to pressure washing using a resin member and an alkaline washing liquid containing an inorganic alkali and exhibiting a pH of more than 9.

摘要翻译： 公开了一种半导体器件的制造方法，包括在半导体衬底上形成相对介电常数为3.5以下的疏水层间绝缘膜，在层间绝缘膜中形成凹部，在具有 凹陷以形成导电层，通过抛光选择性地去除沉积在层间绝缘膜上方的导电材料，以在层间绝缘膜的表面露出，同时将导电材料留在凹槽中，并对具有凹陷的层间绝缘膜的表面进行 填充导电材料以使用树脂构件和含有无机碱的碱性洗涤液进行压力洗涤并显示pH大于9。

公开(公告)号：US20050266355A1

公开(公告)日：2005-12-01

申请号：US11118316

申请日：2005-05-02

申请人： Yukiteru Matsui ,  Gaku Minamihaba ,  Atsushi Shigeta ,  Hiroyuki Yano ,  Satoko Seta ,  Hirokazu Kato

发明人： Yukiteru Matsui ,  Gaku Minamihaba ,  Atsushi Shigeta ,  Hiroyuki Yano ,  Satoko Seta ,  Hirokazu Kato

IPC分类号： G03F7/00 ,  G03F7/09 ,  H01L21/033 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/768

CPC分类号： G03F7/094 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/31058 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/76825 ,  H01L21/76835

摘要： Disclosed is a method of manufacturing a semiconductor device comprising forming an insulating film above a substrate, forming a recess in the insulating film, successively forming an underlying layer, an immediate layer and a resist film above the insulating film having the recess formed thereon, the underlying layer being formed by a process comprising forming a first organic film above the insulating film, chemically mechanically polishing the first organic film to expose a surface of the insulating film and to remain the first organic film selectively in the recess, and forming a second organic film above the insulating film and above the first organic film, and subjecting the resist film to patterning exposure.

摘要翻译： 公开了一种制造半导体器件的方法，包括在衬底上形成绝缘膜，在绝缘膜中形成凹陷，在其上形成有凹部的绝缘膜上依次形成下层，立即层和抗蚀剂膜， 通过包括在绝缘膜上形成第一有机膜的方法形成下层，对第一有机膜进行化学机械抛光以暴露绝缘膜的表面，并在第一有机膜中选择性地保留第一有机膜，并形成第二有机膜 在绝缘膜之上和第一有机膜之上，并且对抗蚀剂膜进行图案曝光。

公开(公告)号：US06935932B2

公开(公告)日：2005-08-30

申请号：US10784945

申请日：2004-02-25

申请人： Norio Kimura ,  Mitsuhiko Shirakashi ,  Katsuya Okumura ,  You Ishii ,  Junji Kunisawa ,  Hiroyuki Yano

发明人： Norio Kimura ,  Mitsuhiko Shirakashi ,  Katsuya Okumura ,  You Ishii ,  Junji Kunisawa ,  Hiroyuki Yano

IPC分类号： B24B9/06 ,  B24B37/12 ,  B24B37/34 ,  H01L21/00 ,  B24B1/00

CPC分类号： B24B37/345 ,  B24B9/065 ,  B24B37/12 ,  H01L21/67046

摘要： A polishing apparatus and method has a function of polishing a surface of a film formed on a substrate to a flat mirror finish and a function of polishing unnecessary metal film such as copper film deposited on an outer peripheral portion of the substrate to remove such unnecessary metal film. The polishing apparatus comprises a surface polishing mechanism comprising a polishing table having a polishing surface and a top ring for holding the substrate and pressing the substrate against the polishing surface of the polishing table to thereby polish a surface of the substrate, and an outer periphery polishing mechanism for polishing an outer peripheral portion of the substrate.

公开(公告)号：US06858639B2

公开(公告)日：2005-02-22

申请号：US10121833

申请日：2002-04-15

申请人： Keiji Toriyabe ,  Nobuo Takefuji ,  Minoru Itou ,  Tetsuya Hirade ,  Kiyotoshi Nishiyama ,  Mitsuharu Asahida ,  Yasunobu Maeda ,  Nobuhide Wada ,  Toyokazu Fujisawa ,  Hiroyuki Yano ,  Masaaki Komatsu ,  Osamu Tada

发明人： Keiji Toriyabe ,  Nobuo Takefuji ,  Minoru Itou ,  Tetsuya Hirade ,  Kiyotoshi Nishiyama ,  Mitsuharu Asahida ,  Yasunobu Maeda ,  Nobuhide Wada ,  Toyokazu Fujisawa ,  Hiroyuki Yano ,  Masaaki Komatsu ,  Osamu Tada

IPC分类号： A01N41/10 ,  A01N43/08 ,  A01N43/10 ,  A01N43/40 ,  A01N43/54 ,  A01N43/56 ,  A01N43/58 ,  A01N43/60 ,  A01N43/76 ,  A01N43/78 ,  A61K31/4164 ,  A61K31/4196 ,  A61K31/445 ,  A61K31/495 ,  A61K31/498 ,  A61K31/50 ,  A61K31/513 ,  A61K31/53 ,  C07C309/00 ,  C07C317/14 ,  C07C317/22 ,  C07C317/32 ,  C07C323/09 ,  C07C323/18 ,  C07C323/31 ,  C07D211/54 ,  C07D213/52 ,  C07D213/57 ,  C07D213/64 ,  C07D231/12 ,  C07D249/08 ,  C07D253/00 ,  C07D263/32 ,  C07D277/26 ,  C07D307/56 ,  C07D333/24 ,  C07D333/28 ,  A07N43/56

CPC分类号： C07D213/12 ,  A01N31/08 ,  A01N31/14 ,  A01N33/10 ,  A01N37/08 ,  A01N37/34 ,  A01N41/10 ,  A01N43/08 ,  A01N43/10 ,  A01N43/40 ,  A01N43/54 ,  A01N43/56 ,  A01N43/653 ,  A01N43/76 ,  A01N43/78 ,  A01N47/18 ,  C07C317/32 ,  C07C317/48 ,  C07C323/18 ,  C07C323/20 ,  C07C323/36 ,  C07C323/63 ,  C07D213/32 ,  C07D213/48 ,  C07D213/57 ,  C07D213/64 ,  C07D239/36 ,  C07D239/38 ,  C07D239/40 ,  C07D249/08 ,  C07D333/24

摘要： 3-Arylphenyl sulfide derivatives represented by general formula (I):   (wherein R is a C2-C6 alkyl group, a C2-C6 alkenyl group, a C2-C6 alkynyl group or the like, B0 to B2 and B3 are hydrogen atoms, halogen atoms, cyano groups, C1-C4 haloalkyl groups or the like, n is 0, 1 or 2, and Ar is a phenyl ring, a pyridine ring, a thiophene ring, a pyrazole ring or the like), and insecticides and miticides containing the 3-arylphenyl sulfide derivatives as an active ingredient.

摘要翻译： 由通式（I）表示的3-芳基苯基硫醚衍生物:(其中R为C2-C6烷基，C2-C6烯基，C2-C6炔基等，B0至B2和B3为氢原子， 卤素原子，氰基，C 1〜C 4卤代烷基等，n为0,1或2，Ar为苯环，吡啶环，噻吩环，吡唑环等），杀虫剂和杀螨剂 含有3-芳基苯基硫醚衍生物作为活性成分。

公开(公告)号：US06454819B1

公开(公告)日：2002-09-24

申请号：US09484064

申请日：2000-01-18

申请人： Hiroyuki Yano ,  Gaku Minamihaba ,  Yukiteru Matsui ,  Katsuya Okumura ,  Masayuki Motonari ,  Masayuki Hattori ,  Akira Iio

发明人： Hiroyuki Yano ,  Gaku Minamihaba ,  Yukiteru Matsui ,  Katsuya Okumura ,  Masayuki Motonari ,  Masayuki Hattori ,  Akira Iio

IPC分类号： C09K314

CPC分类号： C09K3/1463 ,  C08G83/001 ,  C08J3/128 ,  C08K3/36 ,  C08K5/057 ,  C08K2201/013 ,  C09G1/02 ,  C09K3/1436 ,  H01L21/02024 ,  H01L21/31053 ,  H01L21/3212

摘要： A process for chemical mechanical polishing of a working film on a wafer, which entails conducting the chemical mechanical polishing with an aqueous dispersion containing water and composite particles, the composite particles containing polymer particles having at least one of a silicon compound portion or section and a metal compound portion or section formed directly or indirectly on the polymer particles.

摘要翻译： 一种用于化学机械抛光晶片上的工作薄膜的方法，该方法需要用含水和复合颗粒的水性分散体进行化学机械抛光，所述复合颗粒含有具有硅化合物部分或部分和 在聚合物颗粒上直接或间接形成的金属化合物部分或部分。

公开(公告)号：US06429134B1

公开(公告)日：2002-08-06

申请号：US09606149

申请日：2000-06-29

申请人： Takeo Kubota ,  Hiroyuki Yano ,  Kenro Nakamura

发明人： Takeo Kubota ,  Hiroyuki Yano ,  Kenro Nakamura

IPC分类号： H01L21302

CPC分类号： H01L21/31053 ,  H01L21/3212 ,  H01L21/76224 ,  H01L21/7684

摘要： A method of manufacturing a semiconductor device, which comprises the steps of providing a substrate having a groove on the surface thereof, forming a burying film on the substrate to thereby fill the groove with the burying film, performing a first polishing step to polish the burying film by means of a CMP method, the polishing being suspended before the substrate is exposed, and performing a second polishing step to polish the burying film by means of a CMP method until part of the burying film which is disposed outside the groove is removed. The time to finish polishing of the second polishing step is determined based on a film thickness of the burying film which is left remained after finishing the first polishing step. The first polishing step may be performed under a condition which differs from that of the second polishing step.

摘要翻译： 一种制造半导体器件的方法，包括以下步骤：在其表面上提供具有沟槽的衬底，在衬底上形成掩埋膜，从而用掩埋膜填充沟槽，执行第一抛光步骤以抛光掩埋 通过CMP方法将所述抛光悬浮在所述基板被暴露之前，并且进行第二抛光步骤，以通过CMP方法对所述掩埋膜进行抛光，直到除去设置在所述凹槽外部的掩埋膜的一部分。 基于在完成第一研磨步骤后残留的掩埋膜的膜厚度来确定第二抛光步骤的抛光的时间。 可以在与第二研磨工序不同的条件下进行第一研磨工序。

公开(公告)号：US06375545B1

公开(公告)日：2002-04-23

申请号：US09484252

申请日：2000-01-18

申请人： Hiroyuki Yano ,  Gaku Minamihaba ,  Yukiteru Matsui ,  Nobuo Hayasaka ,  Katsuya Okumura ,  Akira Iio ,  Masayuki Hattori ,  Masayuki Motonari

发明人： Hiroyuki Yano ,  Gaku Minamihaba ,  Yukiteru Matsui ,  Nobuo Hayasaka ,  Katsuya Okumura ,  Akira Iio ,  Masayuki Hattori ,  Masayuki Motonari

IPC分类号： B24B100

CPC分类号： H01L21/3212 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/31053 ,  Y10S977/775 ,  Y10S977/888

摘要： It is an object of the present invention to provide an aqueous dispersion and CMP slurry that can achieve polishing at an adequate rate without producing scratches in the polishing surfaces of wafer working films, and a polishing process for wafer surfaces and a process for manufacture of a semiconductor device using them. A CMP slurry and the like of the present invention contains polymer particles with a crosslinked structure and a mean particle size of 0.13-0.8 &mgr;m. The CMP slurry may contain no surfactant, and may contain the surfactant of not greater than 0.15 wt %. A CMP slurry and the like of another present invention contains polymer particles and inorganic particles of silica, aluminum and the like. A mean particle size of the polymer particles may be not greater than a mean particle size of the inorganic particles. And the mean particle size of the inorganic coagulated particles may be 0.1-1.0 &mgr;m, and may be smaller than the mean particle size of the polymer particles. The CMP slurry is used as a polishing agent and a working film of a silicon oxide film, an aluminum film, a tungsten film or a copper film formed on a wafer is polished. And a semiconductor device is manufactured by using the CMP slurry.

摘要翻译： 本发明的目的是提供一种水分散体和CMP浆料，其可以以足够的速率实现抛光，而不会在晶片工作薄膜的抛光表面中产生划痕，以及用于晶片表面的抛光工艺和制造 半导体器件使用它们。 本发明的CMP浆料等含有交联结构，平均粒径为0.13〜0.8μm的聚合物粒子。 CMP浆料可以不含表面活性剂，并且可以含有不大于0.15重量％的表面活性剂。 另一个本发明的CMP浆料等含有聚合物颗粒和二氧化硅，铝等的无机颗粒。 聚合物颗粒的平均粒径可以不大于无机颗粒的平均粒度。 无机凝结粒子的平均粒径可以为0.1〜1.0μm，并且可以小于聚合物粒子的平均粒径。 将CMP浆料用作抛光剂，并且研磨在晶片上形成的氧化硅膜，铝膜，钨膜或铜膜的工作膜。 并且通过使用CMP浆料制造半导体器件。