Fluid conditioning system and method

    公开(公告)号:US20060006106A1

    公开(公告)日:2006-01-12

    申请号:US11179309

    申请日:2005-07-11

    申请人: John White

    发明人: John White

    IPC分类号: C02F1/02 C02F1/48

    摘要: An exemplary method and system for reducing or eliminating the formation of solid precipitates/deposits of a flowing fluid, such as oil, or for reducing or eliminating existing solid precipitates/deposits contained in a flowing fluid, is provided. A fluid conditioning system and method are provided, along with a magnetic fluid conditioner that provides numerous magnetic field transitions through a magnetic flux density in the flow path of the fluid to reduce the formation of precipitates/deposits. A recirculating system using the invention may be set up to reduce deposits, such as paraffin in oil, by circulating oil through a pump, a magnetic fluid conditioner, a tank, and, in one embodiment, and a heater until the deposits/precipitates have been transitioned from a solid to a liquid. A multi-pole magnet, such as an eight-pole magnet, may be used in an embodiment of the present invention to increase the effectiveness of the present invention.

    Plasma uniformity control by gas diffuser hole design
    92.
    发明申请
    Plasma uniformity control by gas diffuser hole design 有权
    通过气体扩散器孔设计的等离子体均匀性控制

    公开(公告)号:US20050251990A1

    公开(公告)日:2005-11-17

    申请号:US10889683

    申请日:2004-07-12

    摘要: Embodiments of a gas diffuser plate for distributing gas in a processing chamber are provided. The gas distribution plate includes a diffuser plate having an upstream side and a downstream side, and a plurality of gas passages passing between the upstream and downstream sides of the diffuser plate. The gas passages include hollow cathode cavities at the downstream side to enhance plasma ionization. The depths, the diameters, the surface area and density of hollow cathode cavities of the gas passages that extend to the downstream end can be gradually increased from the center to the edge of the diffuser plate to improve the film thickness and property uniformity across the substrate. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can be created by bending the diffuser plate toward downstream side, followed by machining out the convex downstream side. Bending the diffuser plate can be accomplished by a thermal process or a vacuum process. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can also be created computer numerically controlled machining. Diffuser plates with gradually increasing diameters, depths and surface areas of the hollow cathode cavities from the center to the edge of the diffuser plate have been shown to produce improved uniformities of film thickness and film properties.

    摘要翻译: 提供了用于在处理室中分配气体的气体扩散板的实施例。 气体分配板包括具有上游侧和下游侧的扩散板,以及在扩散板的上游侧和下游侧之间通过的多个气体通路。 气体通道包括在下游侧的中空阴极腔,以增强等离子体电离。 延伸到下游端的气体通道的空心阴极腔的深度,直径,表面积和密度可以从扩散板的中心到边缘逐渐增加,以改善衬底上的膜厚度和性能均匀性 。 从扩散板的中心到边缘的直径,深度和表面积的增加可以通过向下游侧弯曲扩散板,然后在凸出的下游侧加工出来。 扩散板的弯曲可以通过热处理或真空工艺来实现。 从扩散板的中心到边缘的直径,深度和表面积的增加也可以用计算机数字控制加工。 具有从扩散板的中心到边缘的中空阴极腔的直径逐渐增加,深度和表面积逐渐增大的扩散板已被证明可以产生改善的膜厚度和膜性质的均匀性。

    Growth of carbon nanotubes at low temperature
    93.
    发明申请
    Growth of carbon nanotubes at low temperature 审中-公开
    碳纳米管在低温下生长

    公开(公告)号:US20050233263A1

    公开(公告)日:2005-10-20

    申请号:US10827915

    申请日:2004-04-20

    摘要: A method for depositing carbon nanotubes on a large substrate is provided. The carbon nanotubes are deposited on a plasma treated transition metal layer on a substrate. In one aspect, the transition metal layer is treated with a plasma of argon or a mixture of nitrogen and hydrogen. The carbon nanotubes are deposited by thermal chemical vapor deposition at a substrate temperature of between about 400° C. and about 450° C.

    摘要翻译: 提供了一种在大型基板上沉积碳纳米管的方法。 将碳纳米管沉积在基板上的等离子体处理的过渡金属层上。 一方面,用等离子体氩或氮和氢的混合物处理过渡金属层。 通过热化学气相沉积在约400℃至约450℃的衬底温度下沉积碳纳米管。

    Showerhead mounting to accommodate thermal expansion
    94.
    发明申请
    Showerhead mounting to accommodate thermal expansion 有权
    淋浴头安装,以适应热膨胀

    公开(公告)号:US20050183827A1

    公开(公告)日:2005-08-25

    申请号:US11063454

    申请日:2005-02-23

    摘要: Methods and apparatus for accommodating thermal expansion of a showerhead. In a first aspect of the invention, the showerhead is movably supported by resting a rim of the showerhead on a support shelf. In a second aspect, the showerhead is suspended from the chamber wall by a plurality of hangers that are connected to the showerhead, the chamber wall, or both by pins that slide within slots so as to permit the hangers to slide radially to accommodate thermal expansion of the showerhead in the radial direction. In a third aspect, the showerhead is suspended from the wall of the vacuum chamber by a plurality of rods or flexible wires. In a fourth aspect, the showerhead is connected near its perimeter to a second material having a greater thermal expansion coefficient than the showerhead. In a fifth aspect, a heater is mounted behind the showerhead to reduce the termperature differential between the top and bottom surfaces of the showerhead or to reduce heat transfer from the workpiece to the showerhead.

    摘要翻译: 用于容纳喷头的热膨胀的方法和装置。 在本发明的第一方面,喷头通过将喷头的边缘放置在支撑架上而被可移动地支撑。 在第二方面,喷头通过多个悬挂器从室壁悬挂,多个悬挂器通过在槽内滑动的销连接到喷头,室壁或两者,以允许吊架径向滑动以适应热膨胀 的喷头在径向方向。 在第三方面,喷头通过多个杆或柔性线悬挂在真空室的壁上。 在第四方面,喷头在其周边附近连接到具有比喷头更大的热膨胀系数的第二材料。 在第五方面,一种加热器被安装在淋浴喷头之后,以降低喷淋头的顶表面和底表面之间的温差,或减少从工件到喷头的热传递。

    Crosslinking agent for a silicone composition which can be crosslinked at low temperature based on a hydrogenated silicone oil comprising Si-H units at the chain end and in the chain
    95.
    发明申请
    Crosslinking agent for a silicone composition which can be crosslinked at low temperature based on a hydrogenated silicone oil comprising Si-H units at the chain end and in the chain 审中-公开
    基于在链末端和链上包含Si-H单元的氢化硅油在低温下交联的硅氧烷组合物交联剂

    公开(公告)号:US20050165194A1

    公开(公告)日:2005-07-28

    申请号:US10849466

    申请日:2004-05-20

    IPC分类号: C08G77/00

    摘要: The invention relates to crosslinkable or crosslinked silicone compositions capable of being used to form a water-repellent and release coating for a flexible support made of paper or of polymer, in particular a heat-sensitive flexible support. These compositions are of the type of those comprising crosslinking polyorganosiloxanes carrying SiH units and unsaturated, preferably vinylated, polyorganosiloxanes capable of reacting with the crosslinking agent by polyaddition in the presence of platinum to form the release crosslinked coating on the flexible support. The targeted aim is to make possible the instantaneous crosslinking at low temperature (85-90° C.) of such silicone compositions coated on flexible supports at a very high speed. To achieve this aim, the invention provides for the use of specific crosslinking agents composed of POSs hydrogenated at the chain end and in the chain. The invention also relates to the silicone compositions of solvent-free type or of emulsion type comprising the Si-Vi POS, the SiH POS crosslinking agent α,ω-bis(hydrodimethylsiloxyl)poly(hydromethyl)-(dimethyl)siloxane, and the platinum catalyst, inter alia. Applications: release silicone coatings obtained by crosslinking/polyaddition for heat-sensitive flexible supports, for example polymeric films made of polyethylene.

    摘要翻译: 本发明涉及可交联或交联的硅氧烷组合物,其能够用于形成由纸或聚合物,特别是热敏性柔性载体制成的柔性载体的防水和防粘涂层。 这些组合物是包含交联含有SiH单元的聚有机硅氧烷和不饱和的,优选乙烯基化的聚有机硅氧烷的那些类型的那些,其能够在铂存在下通过加聚与交联剂反应以在柔性载体上形成释放交联涂层。 目标的目标是使得可以以非常高的速度在这样的有机硅组合物的低温(85-90℃)下快速交联涂覆在柔性载体上。 为了达到这个目的,本发明提供了使用由在链末端和链中氢化的POS构成的特定交联剂。 本发明还涉及无溶剂型或包含Si-Vi POS,SiH POS交联剂α,ω-双(氢二甲基甲硅烷氧基)聚(氢化甲基) - (二甲基)硅氧烷和铂 催化剂,特别是。 应用:通过用于热敏柔性载体的交联/加聚得到的硅氧烷涂层,例如由聚乙烯制成的聚合物膜。

    Copper bath for electroplating fine circuitry on semiconductor chips
    96.
    发明申请
    Copper bath for electroplating fine circuitry on semiconductor chips 审中-公开
    用于在半导体芯片上电镀精细电路的铜浴

    公开(公告)号:US20050067297A1

    公开(公告)日:2005-03-31

    申请号:US10672416

    申请日:2003-09-26

    申请人: D. Tench John White

    发明人: D. Tench John White

    摘要: Bottom-up filling of fine Damascene trenches and vias in semiconductor chips is attained using a copper pyrophosphate electroplating bath with a single accelerating additive species present at low concentration (

    摘要翻译: 使用具有以低浓度(<5MUM)存​​在的单一促进添加剂物质的焦磷酸铜电镀浴,实现半导体芯片中的细小的镶嵌沟槽和通孔的自底向上填充。 这种浴比酸性硫酸铜浴更容易控制,酸性硫酸铜浴采用复杂的添加剂系统,包括至少两种有机添加剂和氯离子(以及显着的添加剂分解产物)。 焦磷酸盐铜沉积物表现出不退火的稳定性质,通常是硫酸铜沉积物的两倍,这有利于化学机械平面化。 细粒度焦磷酸铜沉积物的机械性能和质地也远低于底物依赖性,其最小化阻挡层和种子层中变化和缺陷的影响。 焦磷酸铜浴的铜种子层的攻击最小化,其操作pH在8至9范围内。 焦磷酸盐和退火的硫酸铜沉积物的电阻率基本相等。

    Method of initiating cooper CMP process
    97.
    发明授权
    Method of initiating cooper CMP process 失效
    启动联合CMP过程的方法

    公开(公告)号:US06541384B1

    公开(公告)日:2003-04-01

    申请号:US09657391

    申请日:2000-09-08

    IPC分类号: H01L2100

    CPC分类号: C09G1/02

    摘要: The present invention provides a chemical mechanical polishing composition for planarizing copper and a method for planarizing, or initiating the planarization of, copper using the composition. The chemical mechanical polishing composition includes an oxidizing agent and a copper (II) compound. The composition optionally includes one or more of the following compound types: a complexing agent; a corrosion inhibitor; an acid; and, an abrasive. In one embodiment, the oxidizing agent is hydrogen peroxide, ferric nitrate or an iodate. In another embodiment, the copper (II) compound is CuSO4. The chemical mechanical polishing method involves the step of polishing a copper layer using a composition that includes an oxidizing agent and a copper (II) compound. The composition is formed in a variety of ways. In one embodiment, it is formed by adding the copper (II) compound to a solution containing the oxidizing agent, and any included optional compound types, in deionized water. In another embodiment, it is formed by adding a solution containing the copper (II) compound in deionized water to a solution containing the oxidizing agent, and any included optional compound types, in deionized water.

    摘要翻译: 本发明提供了一种用于平坦化铜的化学机械抛光组合物和使用该组合物平坦化或起始铜的平面化的方法。 化学机械抛光组合物包括氧化剂和铜(II)化合物。 组合物任选地包括一种或多种以下化合物类型:络合剂; 腐蚀抑制剂; 酸; 和磨料。 在一个实施方案中,氧化剂是过氧化氢,硝酸铁或碘酸盐。 在另一个实施方案中,铜(II)化合物是CuSO 4。 化学机械抛光方法包括使用包含氧化剂和铜(II)化合物的组合物抛光铜层的步骤。 组合物以各种方式形成。 在一个实施方案中,其通过将铜(II)化合物加入到含有氧化剂的溶液和任何所包含的任选化合物类型的去离子水中而形成。 在另一个实施方案中,其通过在去离子水中将含有铜(II)化合物的溶液在去离子水中加入到含有氧化剂和任何所包含的任选化合物类型的溶液中而形成。

    Systems and methods for detecting the movement of an object
    99.
    发明授权
    Systems and methods for detecting the movement of an object 有权
    用于检测物体运动的系统和方法

    公开(公告)号:US08737685B2

    公开(公告)日:2014-05-27

    申请号:US13093548

    申请日:2011-04-25

    IPC分类号: G06K9/00

    摘要: Systems and methods are provided for detecting a movement of an object marked with a marker. The system includes a sensor configured to capture a first image of the marker and to capture a second image of the marker after the first image, each of the first and second images having pixels each having a visual intensity. A controller is configured to compare the first image and the second image by comparing the visual intensity of each of the pixels of the first image and the second image, determine an area of overlap between the first image and the second image based on the comparison, calculate a change in position of the marker in the second image relative to the marker in the first image based on the area of overlap, and detect the movement of the object based on the change in position of the marker.

    摘要翻译: 提供了用于检测标记有标记的对象的运动的系统和方法。 该系统包括被配置为捕获标记的第一图像并且在第一图像之后捕获标记的第二图像的传感器,每个第一和第二图像具有各自具有视觉强度的像素。 控制器被配置为通过比较第一图像和第二图像的每个像素的视觉强度来比较第一图像和第二图像,基于该比较来确定第一图像和第二图像之间的重叠区域, 基于重叠区域计算相对于第一图像中的标记的第二图像中的标记的位置的改变,并且基于标记的位置的改变来检测对象的移动。