公开(公告)号：US09620341B2

公开(公告)日：2017-04-11

申请号：US15189871

申请日：2016-06-22

Applicant: KLA-Tencor Corporation

Inventor： Yung-Ho Alex Chuang ,  David L. Brown ,  John Fielden

IPC: H01J40/06 ,  H01J43/08 ,  H01L31/0216 ,  H01L31/103

CPC classification number: H01J40/06 ,  H01J43/08 ,  H01L31/02161 ,  H01L31/103

Abstract: A system for inspecting a sample including a detector, either a photomultiplier tube or an electron-bombarded image sensor, that is positioned to receive light from the sample. The detector includes a semiconductor photocathode and a photodiode. Notably, the photodiode includes a p-doped semiconductor layer, an n-doped semiconductor layer formed on a first surface of the p-doped semiconductor layer to form a diode, and a pure boron layer formed on a second surface of the p-doped semiconductor layer. The semiconductor photocathode includes silicon, and further includes a pure boron coating on at least one surface.

公开(公告)号：US20160365693A1

公开(公告)日：2016-12-15

申请号：US15249096

申请日：2016-08-26

Applicant: KLA-Tencor Corporation

Inventor： Yung-Ho Alex Chuang ,  J. Joseph Armstrong ,  Vladimir Dribinski ,  John Fielden

IPC: H01S3/00 ,  H01S3/23 ,  G01N21/956 ,  H01S3/16 ,  G01N21/88

Abstract: Improved inspection systems utilize laser systems and associated techniques to generate an ultra-violet (UV) wavelength of approximately 193.368 nm from a fundamental vacuum wavelength near 1063.5 nm. Preferred embodiments separate out an unconsumed portion of an input wavelength to at least one stage and redirect that unconsumed portion for use in another stage. The improved laser systems and associated techniques result in less expensive, longer life lasers than those currently being used in the industry. These laser systems can be constructed with readily-available, relatively inexpensive components.

Abstract translation: 改进的检查系统利用激光系统和相关技术从1063.5nm附近的基本真空波长产生约193.368nm的紫外（UV）波长。 优选实施例将输入波长的未消耗的部分分离成至少一个级，并将该未消耗的部分重定向以用于另一级。 改进的激光系统和相关技术导致比当前在工业中使用的激光器更便宜，更长寿命的激光器。 这些激光系统可以由容易获得的相对便宜的部件构成。

公开(公告)号：US09448184B1

公开(公告)日：2016-09-20

申请号：US14180923

申请日：2014-02-14

Applicant: KLA-Tencor Corporation

Inventor： Xuefeng Liu ,  Yung-Ho Alex Chuang ,  John Fielden

IPC: G01N21/00 ,  G01J4/00 ,  G01N21/95

CPC classification number: G01N21/9501 ,  G01N21/47 ,  G01N21/4788 ,  G01N21/95607 ,  G01N2021/213 ,  G01N2021/95615 ,  H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Determination of one or more optical characteristics of a structure of a semiconductor wafer includes measuring one or more optical signals from one or more structures of a sample, determining a background optical field associated with a reference structure having a selected set of nominal characteristics based on the one or more structures, determining a correction optical field suitable for at least partially correcting the background field, wherein a difference between the measured one or more optical signals and a signal associated with a sum of the correction optical field and the background optical field is below a selected tolerance level, and extracting one or more characteristics associated with the one or more structures utilizing the correction optical field.

Abstract translation: 半导体晶片的结构的一个或多个光学特性的确定包括测量来自样品的一个或多个结构的一个或多个光学信号，基于所述样品的一个或多个结构确定与具有所选择的一组标称特征的参考结构相关联的背景光学场 一个或多个结构，确定适合于至少部分校正背景场的校正光场，其中所测量的一个或多个光信号与与校正光场和背景光场之和相关联的信号之间的差异在以下 选择的公差等级，以及利用所述校正光场提取与所述一个或多个结构相关联的一个或多个特征。

公开(公告)号：US20160094011A1

公开(公告)日：2016-03-31

申请号：US14859122

申请日：2015-09-18

Applicant: KLA-Tencor Corporation

Inventor： Yujun Deng ,  J. Joseph Armstrong ,  Yung-Ho Alex Chuang ,  Vladimir Dribinski ,  John Fielden

IPC: H01S3/137 ,  G01J1/44 ,  G01J1/04 ,  H01S3/16 ,  H01S3/00

CPC classification number: H01S3/137 ,  G01J1/04 ,  G01J1/0411 ,  G01J1/44 ,  G01J2001/4238 ,  G02F1/37 ,  H01S3/005 ,  H01S3/0057 ,  H01S3/0092 ,  H01S3/1611 ,  H01S3/1643 ,  H01S3/1671 ,  H01S2301/08

Abstract: A pulsed UV laser assembly includes a partial reflector or beam splitter that divides each fundamental pulse into two sub-pulses and directs one sub-pulse to one end of a Bragg grating and the other pulse to the other end of the Bragg grating (or another Bragg grating) such that both sub-pulses are stretched and receive opposing (positive and negative) frequency chirps. The two stretched sub-pulses are combined to generate sum frequency light having a narrower bandwidth than could be obtained by second-harmonic generation directly from the fundamental. UV wavelengths may be generated directly from the sum frequency light or from a harmonic conversion scheme incorporating the sum frequency light. The UV laser may further incorporate other bandwidth reducing schemes. The pulsed UV laser may be used in an inspection or metrology system.

Abstract translation: 脉冲UV激光器组件包括部分反射器或分束器，其将每个基本脉冲分成两个子脉冲，并将一个子脉冲引导到布拉格光栅的一端，将另一个脉冲引导到布拉格光栅的另一端（或另一个 布拉格光栅），使得两个子脉冲都被拉伸并接收相对（正和负）频率的线性调频脉冲。 两个延伸的子脉冲被组合以产生具有比通过直接从基波的二次谐波产生可以获得的窄带宽的和频光。 紫外波长可以直接从和频光或从包含和频光的谐波转换方案中产生。 UV激光器可以进一步并入其他带宽减小方案。 脉冲UV激光可用于检测或计量系统。

公开(公告)号：US09299738B1

公开(公告)日：2016-03-29

申请号：US14299749

申请日：2014-06-09

Applicant: KLA-Tencor Corporation

Inventor： David L. Brown ,  Guowu Zheng ,  Yung-Ho Alex Chuang ,  Venkatraman Iyer

IPC: G01T1/20 ,  H01L27/146 ,  H04N5/335

CPC classification number: H01L27/14636 ,  G01N21/9501 ,  H01L27/14618 ,  H01L27/14634 ,  H01L27/1464 ,  H01L27/14806 ,  H01L2224/16225 ,  H01L2924/15311 ,  H01L2924/19105 ,  H04N5/3355 ,  H04N5/369 ,  H05K13/00 ,  Y10T29/49117

Abstract: The present invention includes an interposer disposed on a surface of a substrate, a light sensing array sensor disposed on the interposer, the light sensing array sensor being back-thinned and configured for back illumination, the light sensing array sensor including columns of pixels, one or more amplification circuitry elements configured to amplify an output of the light sensing array sensor, the amplification circuits being operatively connected to the interposer, one or more analog-to-digital conversion circuitry elements configured to convert an output of the light sensing array sensor to a digital signal, the ADC circuitry elements being operatively connected to the interposer, one or more driver circuitry elements configured to drive a clock or control signal of the array sensor, the interposer configured to electrically couple at least two of the light sensing array sensor, the amplification circuits, the conversion circuits, the driver circuits, or one or more additional circuits.

Abstract translation: 本发明包括设置在基板的表面上的插入器，设置在插入件上的光感测阵列传感器，光感测阵列传感器被背面薄化并被配置为用于背光照明，光感测阵列传感器包括像素列，一 或多个放大电路元件，被配置为放大光感测阵列传感器的输出，放大电路可操作地连接到插入器，一个或多个模拟 - 数字转换电路元件，被配置为将光感测阵列传感器的输出转换成 数字信号，所述ADC电路元件可操作地连接到所述插入器，配置成驱动所述阵列传感器的时钟或控制信号的一个或多个驱动器电路元件，所述插入器被配置为电耦合所述光感测阵列传感器中的至少两个， 放大电路，转换电路，驱动器电路或一个或多个附加电路 电话

公开(公告)号：US20160064184A1

公开(公告)日：2016-03-03

申请号：US14834991

申请日：2015-08-25

Applicant: KLA-Tencor Corporation

Inventor： David L. Brown ,  Yung-Ho Alex Chuang ,  John Fielden ,  Marcel Trimpl ,  Jingjing Zhang ,  Devis Contarato ,  Venkatraman Iyer

IPC: H01J37/244 ,  H01J37/28 ,  H01J37/20 ,  H01J37/285

CPC classification number: G01N30/72 ,  G01T1/24 ,  G06F19/00 ,  H01J37/244 ,  H01J37/28 ,  H01J49/02 ,  H01J2237/2441 ,  H01J2237/2446 ,  H01J2237/24475 ,  H01J2237/24495 ,  H01J2237/24592 ,  H01L27/1464 ,  H01L27/14659 ,  H01L27/14661 ,  H01L31/00

Abstract: A scanning electron microscope incorporates a multi-pixel solid-state electron detector. The multi-pixel solid-state detector may detect back-scattered and/or secondary electrons. The multi-pixel solid-state detector may incorporate analog-to-digital converters and other circuits. The multi-pixel solid state detector may be capable of approximately determining the energy of incident electrons and/or may contain circuits for processing or analyzing the electron signals. The multi-pixel solid state detector is suitable for high-speed operation such as at a speed of about 100 MHz or higher. The scanning electron microscope may be used for reviewing, inspecting or measuring a sample such an unpatterned semiconductor wafer, a patterned semiconductor wafer, a reticle or a photomask. A method of reviewing or inspecting a sample is also described.

Abstract translation: 扫描电子显微镜结合了多像素固态电子检测器。 多像素固体检测器可以检测反向散射和/或二次电子。 多像素固态检测器可以并入模数转换器和其他电路。 多像素固态检测器可以能够近似地确定入射电子的能量和/或可以包含用于处理或分析电子信号的电路。 多像素固态检测器适用于高速操作，例如以大约100MHz或更高的速度。 扫描电子显微镜可以用于检查，检查或测量诸如未图案化的半导体晶片，图案化半导体晶片，掩模版或光掩模的样品。 还描述了检查或检查样品的方法。

公开(公告)号：US20150200216A1

公开(公告)日：2015-07-16

申请号：US14591325

申请日：2015-01-07

Applicant: KLA-Tencor Corporation ,  Hamamatsu Photonics K.K.

Inventor： Masaharu Muramatsu ,  Hisanori Suzuki ,  Yasuhito Yoneta ,  Shinya Otsuka ,  Jehn-Huar Chem ,  David L. Brown ,  Yung-Ho Alex Chuang ,  John Fielden ,  Venkatraman Iyer

IPC: H01L27/146

CPC classification number: H01L27/1462 ,  H01L27/1464 ,  H01L27/14685 ,  H01L27/14687

Abstract: An image sensor for short-wavelength light includes a semiconductor membrane, circuit elements formed on one surface of the semiconductor membrane, and a pure boron layer on the other surface of the semiconductor membrane. An anti-reflection or protective layer is formed on top of the pure boron layer. This image sensor has high efficiency and good stability even under continuous use at high flux for multiple years. The image sensor may be fabricated using CCD (charge coupled device) or CMOS (complementary metal oxide semiconductor) technology. The image sensor may be a two-dimensional area sensor, or a one-dimensional array sensor.

Abstract translation: 用于短波长光的图像传感器包括半导体膜，形成在半导体膜的一个表面上的电路元件和在半导体膜的另一个表面上的纯硼层。 在纯硼层的顶部形成防反射层或保护层。 该图像传感器具有高效率和良好的稳定性，即使在高通量下连续使用多年。 图像传感器可以使用CCD（电荷耦合器件）或CMOS（互补金属氧化物半导体）技术来制造。 图像传感器可以是二维区域传感器或一维阵列传感器。

公开(公告)号：US09080971B2

公开(公告)日：2015-07-14

申请号：US14516540

申请日：2014-10-16

Applicant: KLA-Tencor Corporation

Inventor： Daniel Kandel ,  Vladimir Levinski ,  Alexander Svizher ,  Joel Seligson ,  Andrew Hill ,  Ohad Bachar ,  Amnon Manassen ,  Yung-Ho Alex Chuang ,  Ilan Sela ,  Moshe Markowitz ,  Daria Negri ,  Efraim Rotem

IPC: G01N21/47 ,  G01B11/02 ,  G03F7/20 ,  G01N21/956 ,  G01N21/95 ,  G01B11/06 ,  G01N21/21

CPC classification number: G01N21/47 ,  G01B11/02 ,  G01B11/0641 ,  G01B2210/56 ,  G01N21/211 ,  G01N21/9501 ,  G01N21/956 ,  G01N2021/4792 ,  G01N2201/06113 ,  G01N2201/105 ,  G03F7/70625 ,  G03F7/70633

Abstract: Various metrology systems and methods are provided. One metrology system includes a light source configured to produce a diffraction-limited light beam, an apodizer configured to shape the light beam in the entrance pupil of illumination optics, and optical elements configured to direct the diffraction-limited light beam from the apodizer to an illumination spot on a grating target on a wafer and to collect scattered light from the grating target. The metrology system further includes a field stop and a detector configured to detect the scattered light that passes through the field stop. In addition, the metrology system includes a computer system configured to determine a characteristic of the grating target using output of the detector.

Abstract translation: 提供了各种计量系统和方法。 一个计量系统包括被配置为产生衍射受限光束的光源，被配置为使照明光学器件的入射光瞳中的光束成形的变迹器，以及被配置为将来自变迹器的衍射受限光束引导到 在晶片上的光栅目标上的照明点并且收集来自光栅目标的散射光。 测量系统还包括场停止器和检测器，其被配置为检测通过场停止器的散射光。 此外，计量系统包括被配置为使用检测器的输出来确定光栅目标的特性的计算机系统。

公开(公告)号：US20150022805A1

公开(公告)日：2015-01-22

申请号：US14507758

申请日：2014-10-06

Applicant: KLA-Tencor Corporation

Inventor： Vladimir Dribinski ,  Yung-Ho Alex Chuang ,  J. Joseph Armstrong ,  John Fielden

IPC: G01N21/88 ,  G01N21/94

CPC classification number: H01S5/0092 ,  C03B33/02 ,  C30B1/02 ,  C30B29/10 ,  C30B29/14 ,  C30B29/22 ,  C30B29/30 ,  C30B33/02 ,  G01N21/88 ,  G01N21/8806 ,  G01N21/94 ,  G01N21/9501 ,  G01N2201/06113 ,  G01N2201/0637 ,  G01N2201/068 ,  G02F1/353 ,  G02F1/3551 ,  G02F1/3553 ,  G02F1/37 ,  G02F2001/3505 ,  G02F2001/3507 ,  G02F2001/354 ,  G02F2202/20 ,  H01S3/0092 ,  H01S3/10 ,  H01S3/10038 ,  H01S3/10046 ,  H01S3/11

Abstract: An optical system for detecting contaminants and defects on a test surface includes an improved laser system for generating a laser beam and optics directing the laser beam along a path onto the test surface, and producing an illuminated spot thereon. A detector and ellipsoidal mirrored surface are also provided with an axis of symmetry about a line perpendicular to the test surface. In one embodiment, an optical system for detecting anomalies of a sample includes the improved laser system for generating first and second beams, first optics for directing the first beam of radiation onto a first spot on the sample, second optics for directing the second beam onto a second spot on the sample, with the first and second paths at different angles of incidence to the sample surface. In another embodiment, a surface inspection apparatus includes an illumination system configured to focus beams at non-normal incidence angles.

Abstract translation: 用于检测测试表面上的污染物和缺陷的光学系统包括用于产生激光束的改进的激光系统和将激光束沿着路径引导到测试表面上并在其上产生照明点的光学系统。 检测器和椭圆形镜面也具有围绕垂直于测试表面的线的对称轴。 在一个实施例中，用于检测样本异常的光学系统包括用于产生第一和第二光束的改进的激光系统，用于将第一辐射束引导到样品上的第一光点上的第一光学器件，用于将第二光束引导到 样品上的第二个点，第一和第二个路径与样品表面的入射角不同。 在另一个实施例中，表面检查装置包括被配置为以非正常入射角聚焦光束的照明系统。

公开(公告)号：US20140034816A1

公开(公告)日：2014-02-06

申请号：US13947975

申请日：2013-07-22

Applicant: KLA-Tencor Corporation

Inventor： Yung-Ho Alex Chuang ,  John Fielden

IPC: H01J29/38

CPC classification number: H01J29/385 ,  G01N21/9501 ,  G02B21/125 ,  H01J1/34 ,  H01J31/26 ,  H01J31/50 ,  H01L27/14643 ,  H01L27/148 ,  H01L27/14806 ,  H01L27/14893

Abstract: A photocathode is formed on a monocrystalline silicon substrate having opposing illuminated (top) and output (bottom) surfaces. To prevent oxidation of the silicon, a thin (e.g., 1-5 nm) boron layer is disposed directly on the output surface using a process that minimizes oxidation and defects, and a low work-function material layer is then formed over the boron layer to enhance the emission of photoelectrons. The low work-function material includes an alkali metal (e.g., cesium) or an alkali metal oxide. An optional second boron layer is formed on the illuminated (top) surface, and an optional anti-reflective material layer is formed on the boron layer to enhance entry of photons into the silicon substrate. An optional external potential is generated between the opposing illuminated (top) and output (bottom) surfaces. The photocathode forms part of novel sensors and inspection systems.

Abstract translation: 在具有相对的照明​​（顶部）和输出（底部）表面的单晶硅衬底上形成光电阴极。 为了防止硅的氧化，使用最小化氧化和缺陷的工艺将薄（例如，1-5nm）的硼层直接设置在输出表面上，然后在硼层上形成低功函数材料层 以增强光电子的发射。 低功函材料包括碱金属（例如铯）或碱金属氧化物。 在照明（顶部）表面上形成可选的第二硼层，并且在硼层上形成可选的抗反射材料层，以增强光子进入硅衬底的能力。 在相对的照明​​（顶部）和输出（底部）表面之间产生可选的外部电位。 光电阴极形成新型传感器和检测系统的一部分。