公开(公告)号：US08592289B2

公开(公告)日：2013-11-26

申请号：US13148543

申请日：2010-02-04

申请人： Shin Hashimoto ,  Katsushi Akita ,  Shinsuke Fujiwara ,  Hideaki Nakahata ,  Kensaku Motoki

发明人： Shin Hashimoto ,  Katsushi Akita ,  Shinsuke Fujiwara ,  Hideaki Nakahata ,  Kensaku Motoki

IPC分类号： H01L21/20 ,  H01L21/36 ,  C30B23/00 ,  C30B25/00 ,  C30B28/12 ,  C30B28/14

CPC分类号： H01L21/0242 ,  C30B25/18 ,  C30B29/16 ,  C30B29/403 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/045 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7787 ,  H01L33/007 ,  H01L33/16

摘要： A gallium nitride based semiconductor device is provided which includes a gallium nitride based semiconductor film with a flat c-plane surface provided on a gallium oxide wafer. A light emitting diode LED includes a gallium oxide support base 32 having a primary surface 32a of monoclinic gallium oxide, and a laminate structure 33 of Group III nitride. A semiconductor mesa of the laminate structure 33 includes a low-temperature GaN buffer layer 35, an n-type GaN layer 37, an active layer 39 of a quantum well structure, and a p-type gallium nitride based semiconductor layer 37. The p-type gallium nitride based semiconductor layer 37 includes, for example, a p-type AlGaN electron block layer and a p-type GaN contact layer. The primary surface 32a of the gallium oxide support base 32 is inclined at an angle of not less than 2 degrees and not more than 4 degrees relative to a (100) plane of monoclinic gallium oxide. Owing to this inclination, the gallium nitride based semiconductor epitaxially grown on the primary surface 32a of the gallium oxide support base has a flat surface.

摘要翻译： 提供了一种氮化镓基半导体器件，其包括在氧化镓晶片上设置有平坦c面的氮化镓基半导体膜。 发光二极管LED包括具有单斜氧化镓的主表面32a的氧化镓载体基底32和III族氮化物的叠层结构33。 层压结构33的半导体台面包括低温GaN缓冲层35，n型GaN层37，量子阱结构的有源层39和p型氮化镓基半导体层37. p 型氮化镓系半导体层37例如包括p型AlGaN电子阻挡层和p型GaN接触层。 氧化镓载体基体32的主表面32a相对于单斜晶系氧化镓的（100）面倾斜2度以上4度以下。 由于该倾斜，在氧化镓载体基体的主表面32a上外延生长的氮化镓基半导体具有平坦的表面。

公开(公告)号：US08461570B2

公开(公告)日：2013-06-11

申请号：US13127005

申请日：2010-07-07

申请人： Kei Fujii ,  Takashi Ishizuka ,  Katsushi Akita ,  Youichi Nagai ,  Tatsuya Tanabe

发明人： Kei Fujii ,  Takashi Ishizuka ,  Katsushi Akita ,  Youichi Nagai ,  Tatsuya Tanabe

IPC分类号： H01L31/0352 ,  H01L31/0256 ,  G02F1/017

CPC分类号： H01L31/035236 ,  B82Y20/00 ,  H01L21/02392 ,  H01L21/02463 ,  H01L21/02466 ,  H01L21/02507 ,  H01L21/02546 ,  H01L21/02549 ,  H01L21/0262 ,  H01L31/1035 ,  H01L31/109 ,  H01L31/1844 ,  Y02E10/544 ,  Y02P70/521

摘要： A method for manufacturing a semiconductor device, by which a multiple quantum well structure having a large number of pairs can be efficiently grown while maintaining good crystalline quality, and the semiconductor device, are provided. The semiconductor device manufacturing method of the present invention includes a step of forming a multiple quantum well structure 3 having 50 or more pairs of group III-V compound semiconductor quantum wells. In the step of forming the multiple quantum well structure 3, the multiple quantum well structure is formed by metal-organic vapor phase epitaxy using only metal-organic sources (all metal-organic source MOVPE).

摘要翻译： 提供一种制造半导体器件的方法，通过该方法可以有效地生长具有大量对的多量子阱结构，同时保持良好的晶体质量，并提供半导体器件。 本发明的半导体器件制造方法包括形成具有50对以上的III-V族化合物半导体量子阱的多量子阱结构3的工序。 在形成多量子阱结构3的步骤中，通过仅使用金属 - 有机源（全部金属 - 有机源MOVPE）的金属 - 有机气相外延形成多量子阱结构。

公开(公告)号：US08420426B2

公开(公告)日：2013-04-16

申请号：US13093246

申请日：2011-04-25

申请人： Hideki Hirayama ,  Katsushi Akita ,  Takao Nakamura

发明人： Hideki Hirayama ,  Katsushi Akita ,  Takao Nakamura

IPC分类号： H01L21/00

CPC分类号： H01L33/0075 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/32

摘要： To provide a light-emitting device using a nitride semiconductor which can attain high-power light emission by highly efficient light emission, a method of manufacturing the light-emitting device involves forming a first AlGaN layer of a first conductivity type on a side of a first main surface of a nitride semiconductor substrate, forming a light-emitting layer including an InAlGaN quaternary alloy on the first AlGaN layer, forming a second AlGaN layer of a second conductivity type on the light-emitting layer, and removing the nitride semiconductor substrate after forming the second AlGaN layer.

摘要翻译： 为了提供使用能够通过高效发光获得高功率发光的氮化物半导体的发光器件，制造发光器件的方法包括在第一导电类型的一侧形成第一导电类型的第一AlGaN层 在氮化物半导体衬底的第一主表面上，在第一AlGaN层上形成包含InAlGaN四元合金的发光层，在发光层上形成第二导电类型的第二AlGaN层，以及在氮化物半导体衬底之后去除氮化物半导体衬底 形成第二AlGaN层。

公开(公告)号：US20110210313A1

公开(公告)日：2011-09-01

申请号：US13127005

申请日：2010-07-07

申请人： Kei Fujii ,  Takashi Ishizuka ,  Katsushi Akita ,  Youichi Nagai ,  Tatsuya Tanabe

发明人： Kei Fujii ,  Takashi Ishizuka ,  Katsushi Akita ,  Youichi Nagai ,  Tatsuya Tanabe

IPC分类号： H01L31/0352 ,  H01L31/18 ,  B82Y99/00

CPC分类号： H01L31/035236 ,  B82Y20/00 ,  H01L21/02392 ,  H01L21/02463 ,  H01L21/02466 ,  H01L21/02507 ,  H01L21/02546 ,  H01L21/02549 ,  H01L21/0262 ,  H01L31/1035 ,  H01L31/109 ,  H01L31/1844 ,  Y02E10/544 ,  Y02P70/521

摘要： A method for manufacturing a semiconductor device, by which a multiple quantum well structure having a large number of pairs can be efficiently grown while maintaining good crystalline quality, and the semiconductor device, are provided. The semiconductor device manufacturing method of the present invention includes a step of forming a multiple quantum well structure 3 having 50 or more pairs of group III-V compound semiconductor quantum wells. In the step of forming the multiple quantum well structure 3, the multiple quantum well structure is formed by metal-organic vapor phase epitaxy using only metal-organic sources (all metal-organic source MOVPE).

摘要翻译： 提供一种制造半导体器件的方法，通过该方法可以有效地生长具有大量对的多量子阱结构，同时保持良好的晶体质量，并提供半导体器件。 本发明的半导体器件制造方法包括形成具有50对以上的III-V族化合物半导体量子阱的多量子阱结构3的工序。 在形成多量子阱结构3的步骤中，通过仅使用金属 - 有机源（全部金属 - 有机源MOVPE）的金属 - 有机气相外延形成多量子阱结构。

公开(公告)号：US07943943B2

公开(公告)日：2011-05-17

申请号：US11818024

申请日：2007-06-12

申请人： Hideki Hirayama ,  Katsushi Akita ,  Takao Nakamura

发明人： Hideki Hirayama ,  Katsushi Akita ,  Takao Nakamura

IPC分类号： H01L33/00

CPC分类号： H01L33/0075 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/32

摘要： To provide a light-emitting device using a nitride semiconductor which can attain high-power light emission by highly efficient light emission and a manufacturing method thereof, the light-emitting device includes a GaN substrate and a light-emitting layer including an InAlGaN quaternary alloy on a side of a first main surface of GaN substrate.

摘要翻译： 为了提供使用可以通过高效发光获得高功率发光的氮化物半导体的发光器件及其制造方法，该发光器件包括GaN衬底和包括InAlGaN四元合金的发光层 在GaN衬底的第一主表面的一侧。

公开(公告)号：US07687822B2

公开(公告)日：2010-03-30

申请号：US11727425

申请日：2007-03-27

申请人： Youichi Nagai ,  Makoto Kiyama ,  Takao Nakamura ,  Takashi Sakurada ,  Katsushi Akita ,  Koji Uematsu ,  Ayako Ikeda ,  Koji Katayama ,  Susumu Yoshimoto

发明人： Youichi Nagai ,  Makoto Kiyama ,  Takao Nakamura ,  Takashi Sakurada ,  Katsushi Akita ,  Koji Uematsu ,  Ayako Ikeda ,  Koji Katayama ,  Susumu Yoshimoto

IPC分类号： H01L33/00

CPC分类号： H01L33/32 ,  H01L33/20 ,  H01L33/382 ,  H01L33/505 ,  H01L33/507 ,  H01L33/58 ,  H01L2224/05573 ,  H01L2224/16245 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/73265 ,  H01L2224/8592 ,  H01L2924/00014 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/20752 ,  H01L2924/2076 ,  H01L2224/05599 ,  H01L2924/00011 ,  H01L2224/45099

摘要： In order to provide light emitting devices which have simple constructions and thus can be fabricated easily, and can stably provide high light emission efficiencies for a long time period, a light emitting device includes an n-type nitride semiconductor layer at a first main surface side of a nitride semiconductor substrate, a p-type nitride semiconductor layer placed more distantly from the nitride semiconductor substrate than the n-type nitride semiconductor layer at the first main surface side and a light emitting layer placed between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer at the first main surface side. The nitride semiconductor substrate has a resistivity of 0.5 Ω·cm or less and the p-type nitride semiconductor layer side is down-mounted so that light is emitted from the second main surface of the nitride semiconductor substrate at the opposite side from the first main surface.

摘要翻译： 为了提供具有简单结构并因此可以容易地制造并且可以长期稳定地提供高发光效率的发光器件，发光器件在第一主表面侧包括n型氮化物半导体层 的氮化物半导体衬底，比在第一主表面侧的n型氮化物半导体层更远离氮化物半导体衬底设置的p型氮化物半导体层，以及放置在n型氮化物半导体层和 在第一主表面侧的p型氮化物半导体层。 氮化物半导体衬底的电阻率为0.5Ω·cm·cm·cm以下，p型氮化物半导体层一侧被下降，使得从氮化物半导体衬底的第二主表面与第一 主表面。

公开(公告)号：US20080076199A1

公开(公告)日：2008-03-27

申请号：US11979873

申请日：2007-11-09

申请人： Katsushi Akita ,  Takao Nakamura ,  Hideki Hirayama

发明人： Katsushi Akita ,  Takao Nakamura ,  Hideki Hirayama

IPC分类号： H01L21/00

CPC分类号： H01L33/32 ,  H01L33/02 ,  H01L33/025 ,  H01L33/06

摘要： The semiconductor light generating device comprises a light generating region 3, a first AlX1Ga1-X1N semiconductor (0≦X1≦1) layer 5 and a second AlX2Ga1-X2N semiconductor (0≦X2≦1) layer 7. In this semiconductor light generating device, the light generating region 3 is made of III-nitride semiconductor, and includes a InAlGAN semiconductor layer. The first AlX1Ga1-X1N semiconductor (0≦X1≦1) layer 5 is doped with a p-type dopant, such as magnesium, and is provided on the light generating region 3. The second AlX2Ga1-X2N semiconductor layer 7 has a p-type concentration smaller than the first AlX1Ga1-X1N semiconductor layer 5. The second AlX2Ga1-X2N semiconductor (0≦X2≦1) layer 7 is provided between the light generating region 3 and the first AlX1Ga1-X1N semiconductor layer 5.

摘要翻译： 半导体光产生装置包括发光区域3，第一Al 1 N 1 Ga 1-X1 N半导体（0 <= X1 <= 1）层5和第二层 Al x X2 Ga 1-X2 N半导体（0 <= X2 <= 1）层7.在该半导体光产生装置中，光产生区3由III 氮化物半导体，并且包括InAlGAN半导体层。 第一Al X1 N 1 Ga 1-X1 N半导体（0 <= X1 <= 1）层5掺杂有诸如镁的p型掺杂剂，并且是 设置在发光区域3上。第二Al X2 X2 Ga 1-X2 N半导体层7的p型浓度比第一Al X1 < 第一Al 2 N 2 Ga 1-X 2 N半导体（0 <= X2 <= 1 / 1）层7设置在发光区域3和第一Al 1 N 1 Ga 1-X1 N半导体层5之间。

公开(公告)号：US07294867B2

公开(公告)日：2007-11-13

申请号：US11032230

申请日：2005-01-11

申请人： Katsushi Akita ,  Takao Nakamura ,  Hideki Hirayama

发明人： Katsushi Akita ,  Takao Nakamura ,  Hideki Hirayama

IPC分类号： H01L33/00 ,  H01L29/24

CPC分类号： H01L33/32 ,  H01L33/02 ,  H01L33/025 ,  H01L33/06

摘要： The semiconductor light generating device comprises a light generating region 3, a first AlX1Ga1-X1N semiconductor (0≦X1≦1) layer 5 and a second AlX2Ga1-X2N semiconductor (0≦X2≦1) layer 7. In this semiconductor light generating device, the light generating region 3 is made of III-nitride semiconductor, and includes a InAlGaN semiconductor layer. The first AlX1Ga1-X1N semiconductor (0≦X1≦1) layer 5 is doped with a p-type dopant, such as magnesium, and is provided on the light generating region 3. The second AlX2Ga1-X2N semiconductor layer 7 has a p-type concentration smaller than the first AlX1Ga1-X1N semiconductor layer 5. The second AlX2Ga1-X2N semiconductor (0≦X2≦1) layer 7 is provided between the light generating region 3 and the first AlX1Ga1-X1N semiconductor layer 5.

摘要翻译： 半导体光产生装置包括发光区域3，第一Al X1 X 1 Ga 1-X1 N半导体（0 <= X 1 <= 1）层5和 第二Al x X2 Ga 1-X2 N半导体（0 <= X 2 <= 1）层7。 在该半导体发光元件中，发光区域3由III族氮化物半导体构成，具有InAlGaN半导体层。 第一Al X1 X1＆lt; 1-X1＆gt; N半导体（0 <= X 1 <= 1）层5掺杂有诸如镁的p型掺杂剂，以及 设置在发光区域3上。 第二Al X2 X2 Ga 1-X2 N半导体层7的p型浓度比第一Al X1 Ga 1 -X1 N半导体层5。 第二Al X2 X2 Ga 1-X2 N半导体（0 <= X 2 <= 1）层7设置在发光区3和第一Al _{X1 1-X1 N半导体层5。}

公开(公告)号：US09129808B2

公开(公告)日：2015-09-08

申请号：US13583179

申请日：2011-10-03

申请人： Kei Fujii ,  Katsushi Akita ,  Takashi Ishizuka

发明人： Kei Fujii ,  Katsushi Akita ,  Takashi Ishizuka

IPC分类号： H01L21/00 ,  H01L21/20 ,  H01L21/36 ,  H01L21/02 ,  C30B25/18 ,  C30B29/40 ,  H01L31/0352 ,  H01L31/105 ,  H01L31/18 ,  B82Y20/00

CPC分类号： H01L21/0262 ,  B82Y20/00 ,  C30B25/183 ,  C30B29/403 ,  H01L21/02387 ,  H01L21/02392 ,  H01L21/02458 ,  H01L21/02463 ,  H01L21/02466 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/02546 ,  H01L21/02549 ,  H01L31/035236 ,  H01L31/105 ,  H01L31/1844 ,  Y02E10/544 ,  Y02P70/521

摘要： Provided are an epitaxial wafer, a photodiode, and the like that include an antimony-containing layer and can be efficiently produced such that protruding surface defects causing a decrease in the yield can be reduced and impurity contamination causing degradation of the performance can be suppressed.The production method includes a step of growing an antimony (Sb)-containing layer on a substrate 1 by metal-organic vapor phase epitaxy using only metal-organic sources; and a step of growing, on the antimony-containing layer, an antimony-free layer including a window layer 5, wherein, from the growth of the antimony-containing layer to completion of the growth of the window layer, the growth is performed at a growth temperature of 425° C. or more and 525° C. or less.

摘要翻译： 提供包括含锑层的外延晶片，光电二极管等，并且可以有效地制造，从而可以减少导致产率降低的突出表面缺陷，并且可以抑制导致性能下降的杂质污染。 该制造方法包括仅使用金属有机源的金属有机气相外延，在基板1上生长含锑（Sb）层的工序; 以及在含锑层上生长包含窗口层5的无锑层的步骤，其中，从含锑层的生长到窗口层的生长完成，生长在 生长温度为425℃以上且525℃以下。

公开(公告)号：US08822977B2

公开(公告)日：2014-09-02

申请号：US13806585

申请日：2011-06-15

申请人： Katsushi Akita ,  Takashi Ishizuka ,  Kei Fujii ,  Hideaki Nakahata ,  Youichi Nagai ,  Hiroshi Inada ,  Yasuhiro Iguchi

发明人： Katsushi Akita ,  Takashi Ishizuka ,  Kei Fujii ,  Hideaki Nakahata ,  Youichi Nagai ,  Hiroshi Inada ,  Yasuhiro Iguchi

IPC分类号： H01L29/06 ,  H01L31/18 ,  H01L31/0352 ,  H01L31/0304 ,  B82Y20/00

CPC分类号： H01L31/035236 ,  B82Y20/00 ,  H01L31/03046 ,  H01L31/18 ,  H01L31/1844 ,  Y02E10/544

摘要： A photodetector and a method of manufacturing the photodetector are provided, in which variation in sensitivity is suppressed over the near-infrared region from the short wavelength side including 1.3 μm to the long wavelength side. The photodetector includes, on an InP substrate, an absorption layer of a type II multiple quantum well structure comprising a repeated structure of a GaAsSb layer and an InGaAs layer, and has sensitivity in the near-infrared region including wavelengths of 1.3 μm and 2.0 μm. The ratio of the sensitivity at the wavelength of 1.3 μm to the sensitivity at the wavelength of 2.0 μm is not smaller than 0.5 but not larger than 1.6.

摘要翻译： 提供了一种光电检测器和制造该光检测器的方法，其中从包括1.3μm到长波长侧的短波长侧的近红外区域抑制了灵敏度的变化。 光检测器在InP衬底上包括II型多量子阱结构的吸收层，其包括GaAsSb层和InGaAs层的重复结构，并且在包括1.3μm和2.0μm的波长的近红外区域中具有灵敏度 。 在1.3μm波长下的灵敏度与2.0μm波长下的灵敏度之比不小于0.5但不大于1.6。