公开(公告)号：US06614033B2

公开(公告)日：2003-09-02

申请号：US10002296

申请日：2001-12-05

申请人： Kyoichi Suguro ,  Atsushi Murakoshi ,  Katsuya Okumura

发明人： Kyoichi Suguro ,  Atsushi Murakoshi ,  Katsuya Okumura

IPC分类号： H01J37317

CPC分类号： H01J37/3171 ,  H01J2237/31711

摘要： An electrically conductive mask having openings formed is located above a semiconductor substrate and ions are implanted into the surface of the semiconductor substrate through the electrically conductive mask, thereby forming ion implanted layers. For ion implantation under different conditions, a dedicated electrically conductive mask is used with each ion implantation step.

公开(公告)号：US06538323B1

公开(公告)日：2003-03-25

申请号：US09449941

申请日：1999-11-29

申请人： Atsuko Sakata ,  Keiichi Sasaki ,  Nobuo Hayasaka ,  Katsuya Okumura ,  Hirotaka Nishino

发明人： Atsuko Sakata ,  Keiichi Sasaki ,  Nobuo Hayasaka ,  Katsuya Okumura ,  Hirotaka Nishino

IPC分类号： H01L2348

CPC分类号： H01L24/03 ,  H01L23/481 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/742 ,  H01L2224/0401 ,  H01L2224/05022 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05624 ,  H01L2224/11001 ,  H01L2224/1131 ,  H01L2224/11334 ,  H01L2224/1147 ,  H01L2224/13022 ,  H01L2224/13025 ,  H01L2224/13099 ,  H01L2224/13144 ,  H01L2924/00011 ,  H01L2924/0002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01046 ,  H01L2924/0105 ,  H01L2924/01057 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/12042 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2224/05552 ,  H01L2224/81805

摘要： After a barrier film is formed on a pad electrode, Ni particles having a diameter of 2 &mgr;m or less are selectively deposited on the barrier film, thereby forming a Ni fine particle film. Then, a bump electrode made of a solder ball is provided on the pad electrode through the Ni fine particle film. Thereafter, the bump electrode is melted by a heat treatment to join the Ni fine particle film to the bump electrode. Thus, a bump electrode structure is finished.

摘要翻译： 在焊盘电极上形成阻挡膜之后，在阻挡膜上选择性地沉积直径为2μm以下的Ni粒子，形成Ni微粒膜。 然后，通过Ni微粒膜在焊盘电极上设置由焊料球形成的突起电极。 此后，通过热处理使凸块电极熔融，将Ni微粒膜与凸点电极接合。 因此，凸块电极结构完成。

公开(公告)号：US06495841B1

公开(公告)日：2002-12-17

申请号：US09299145

申请日：1999-04-26

申请人： Atsushi Ando ,  Shunko Magoshi ,  Kazuyoshi Sugihara ,  Yuichiro Yamazaki ,  Motosuke Miyoshi ,  Katsuya Okumura ,  Kiyoshi Hattori

发明人： Atsushi Ando ,  Shunko Magoshi ,  Kazuyoshi Sugihara ,  Yuichiro Yamazaki ,  Motosuke Miyoshi ,  Katsuya Okumura ,  Kiyoshi Hattori

IPC分类号： H01J37317

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/023 ,  H01J37/3174

摘要： In an electron beam drawing apparatus including an objective lens for focusing an electron beam emitted from an electron gun on a sample surface and an objective deflector for controlling the position of the electron beam on the sample surface, an objective driving mechanism for mechanically moving the objective lens and objective deflector in a plane perpendicular to the optical axis of the electron beam is provided and an optical axis shifting deflector arranged nearer to the electron gun than the objective lens and objective deflector, for deflecting the electron beam in synchronism with the operation of the objective lens and objective deflector is provided.

摘要翻译： 在包括用于将从电子枪发射的电子束聚焦在样品表面上的物镜和用于控制电子束在样品表面上的位置的物镜偏转器的电子束描绘装置中，用于机械地移动物镜的物镜驱动机构 提供了与电子束的光轴垂直的平面中的透镜和物镜偏转器，并且与物镜和物镜偏转器相比更靠近电子枪布置的光轴移动偏转器，用于与电子束的操作同步地偏转 提供物镜和物镜偏转器。

公开(公告)号：US06409780B1

公开(公告)日：2002-06-25

申请号：US09482937

申请日：2000-01-14

申请人： Hiroyuki Yano ,  Nobuo Hayasaka ,  Katsuya Okumura ,  Akira Iio ,  Masayuki Hattori ,  Kiyonobu Kubota

发明人： Hiroyuki Yano ,  Nobuo Hayasaka ,  Katsuya Okumura ,  Akira Iio ,  Masayuki Hattori ,  Kiyonobu Kubota

IPC分类号： C09K314

CPC分类号： C09G1/02 ,  C09K3/1463

摘要： Water-laden solid matter is provided which is obtained by adding 40 to 300 weight parts of water to 100 weight parts of inorganic oxide particles synthesized by fumed process or metal evaporation oxidation process, slurry for polishing is provided which is manufactured by using the water-laden solid matter, and a method for manufacturing a semiconductor device using the above slurry. Said water-laden solid matter is within a range of 0.3 to 3 g/cm3 in bulk density and within a range of 0.5 to 100 mm&phgr; in average particle size when manufactured granular. Said slurry for polishing is manufactured from the water-laden solid matter, and the average particle size thereof after being dispersed in water is within a range of 0.05 to 1.0 &mgr;m.

摘要翻译： 提供含水固体物质，其通过向通过热解法或金属蒸发氧化法合成的100重量份的无机氧化物颗粒中加入40至300重量份的水而获得，提供了通过使用水 - 负载固体物质，以及使用上述浆料制造半导体器件的方法。 所述含水固体物质的体积密度为0.3〜3g / cm 3，制粒时的平均粒径为0.5〜100mmφ的范围。 用于抛光的所述浆料由含水固体物质制成，其在分散在水中的平均粒径在0.05-1.0μm的范围内。

公开(公告)号：US06334928B1

公开(公告)日：2002-01-01

申请号：US09239793

申请日：1999-01-29

申请人： Makoto Sekine ,  Nobuo Hayasaka ,  Katsuya Okumura

发明人： Makoto Sekine ,  Nobuo Hayasaka ,  Katsuya Okumura

IPC分类号： B01D800

CPC分类号： B01D53/06 ,  B01D8/00 ,  B01D53/0462 ,  B01D2257/2066 ,  B01D2258/0216 ,  B01D2259/40056 ,  B01D2259/40088 ,  B01D2259/402 ,  C23C16/4412 ,  Y02C20/30 ,  Y02P70/34 ,  Y02P70/605

摘要： A semiconductor wafer etching system exhausts an exhaust gas including fluorocarbon gas to an exhaust line. Two traps, that are capable of trapping the fluorocarbon gas in the exhaust gas by cooled adsorption and releasing the adsorbed fluorocarbon gas by heating, are alternately arranged on the exhaust line. The two traps are alternately separated from the exhaust gas and regenerated on a regeneration line which serves to release the adsorbed fluorocarbon gas from the traps. The trap which is in the trap mode to adsorb the fluorocarbon gas is cooled to −120° C. or less. The trap which is in the regeneration mode to release the adsorbed fluorocarbon gas is heated to −100° C. or more.

摘要翻译： 半导体晶片蚀刻系统将包括碳氟化合物气体的废气排出到排气管线。 能够通过冷却吸附捕集排气中的碳氟化合物气体并且通过加热而释放吸附的碳氟化合物气体的两个捕集阱交替排列在排气管线上。 两个捕集阱与废气交替分离，并在用于从捕集器中释放吸附的碳氟化合物气体的再生管线上再生。 陷阱模式中吸附碳氟化合物气体的阱被冷却至-120℃或更低。 处于再生模式以释放吸附的碳氟化合物气体的捕集器被加热到​​-100℃或更高。

公开(公告)号：US06331681B1

公开(公告)日：2001-12-18

申请号：US08214623

申请日：1994-03-18

申请人： Katsuya Okumura

发明人： Katsuya Okumura

IPC分类号： H05K116

CPC分类号： H01L24/13 ,  H01L24/11 ,  H01L24/81 ,  H01L2224/05124 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05684 ,  H01L2224/13099 ,  H01L2224/13144 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/81801 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01047 ,  H01L2924/01072 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/15787 ,  H01L2924/30105 ,  H01R43/00 ,  H05K3/102 ,  H05K3/14 ,  H05K3/32 ,  H05K2201/10636 ,  H05K2203/0425 ,  H05K2203/1461 ,  Y02P70/611 ,  H01L2924/00 ,  H01L2224/48

摘要： Electrical connection device for forming electrical connection between a first portion and a second portion of a semiconductor device. The first portion is set near or in contact with the second portion. The first and second portions are electrically connected by spraying fine metal particles of gold, nickel or copper in a carrier gas of helium, argon, hydrogen or nitgrogen on the first and second portions to form a metal bump. Prior to spraying the fine metal particles to form the metal bump, hard particles of titanium, copper, hafnium, zirconium or vanadium may be sprayed on the first and second portions to remove contamination layers.

摘要翻译： 用于在半导体器件的第一部分和第二部分之间形成电连接的电连接装置。 第一部分设置在第二部分附近或与第二部分接触。 第一和第二部分通过在第一和第二部分上喷射氦气，氩气，氢气或氮气的载气中的金，镍或铜的金属细颗粒电连接以形成金属凸块。 在喷涂细金属颗粒以形成金属凸块之前，可以将钛，铜，铪，锆或钒的硬颗粒喷涂在第一和第二部分上以除去污染层。

公开(公告)号：US06291891B1

公开(公告)日：2001-09-18

申请号：US09228642

申请日：1999-01-12

申请人： Kazuyuki Higashi ,  Noriaki Matsunaga ,  Akihiro Kajita ,  Tetsuo Matsuda ,  Tadashi Iijima ,  Hisashi Kaneko ,  Hideki Shibata ,  Naofumi Nakamura ,  Minakshisundaran Balasubramanian Anand ,  Tadashi Matsuno ,  Katsuya Okumura

发明人： Kazuyuki Higashi ,  Noriaki Matsunaga ,  Akihiro Kajita ,  Tetsuo Matsuda ,  Tadashi Iijima ,  Hisashi Kaneko ,  Hideki Shibata ,  Naofumi Nakamura ,  Minakshisundaran Balasubramanian Anand ,  Tadashi Matsuno ,  Katsuya Okumura

IPC分类号： H01L2348

CPC分类号： H01L21/76852 ,  H01L21/288 ,  H01L21/76807 ,  H01L21/76814 ,  H01L21/76819 ,  H01L21/76831 ,  H01L21/76834 ,  H01L21/76835 ,  H01L21/76844 ,  H01L21/76849 ,  H01L21/76885 ,  H01L21/76897 ,  H01L23/5226 ,  H01L2221/1026 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device manufacturing method comprises a step of forming a trench to a first insulation film formed on a semiconductor substrate, and forming a lower level wiring in the trench, a step of forming at least one conductive layer on the semiconductor substrate to coat the lower level wiring, a step of forming at least one thin film layer on the conductive layer, a step of forming a hard mask by patterning the thin film, a step of etching the conductive layer by using the hard mask as an etching mask, and forming a conductive pillar-shaped structure, whose upper surface is covered with the hard mask, on the lower level wiring, a step of forming a second insulation film on the semiconductor substrate so that the pillar-shaped structure is buried, a step of forming a wiring trench in which at least the hard mask is exposed, and a step of burying a conductor into the wiring trench after the hard mask is removed, and forming an upper level wiring in the wiring trench.

公开(公告)号：US06274512B1

公开(公告)日：2001-08-14

申请号：US09658508

申请日：2000-09-08

申请人： Hisataka Hayashi ,  Tokuhisa Ohiwa ,  Katsuya Okumura

发明人： Hisataka Hayashi ,  Tokuhisa Ohiwa ,  Katsuya Okumura

IPC分类号： H01L213605

CPC分类号： H01L21/02043 ,  H01L21/28518

摘要： A method comprises the steps of forming a damaged layer on a silicon substrate by subjecting the silicon substrate to a plasma treatment, forming a silicon oxide layer by exposing the surface of the damaged layer to an oxygen plasma to oxidize the surface of the silicon substrate including the damaged layer and selectively eliminating the silicon oxide layer under a condition of a high selective ratio to the silicon, in which the film thickness of the silicon oxide layer is controlled by controlling an ion energy of the oxygen plasma and exposure time of the surface of the damaged layer to the oxygen plasma in accordance with the film thickness of the damaged layer.

摘要翻译： 一种方法包括以下步骤：通过对硅衬底进行等离子体处理，在硅衬底上形成损伤层，通过将损伤层的表面暴露于氧等离子体来氧化氧化硅层，以氧化硅衬底的表面，包括 损坏层，并且在与硅的选择率高的条件下选择性地除去氧化硅层，其中通过控制氧等离子体的离子能量和表面的暴露时间来控制氧化硅层的膜厚度 根据损伤层的膜厚度，氧等离子体的损伤层。

公开(公告)号：US06190840B1

公开(公告)日：2001-02-20

申请号：US09098469

申请日：1998-06-17

申请人： Kenji Kawano ,  Shinichi Ito ,  Katsuya Okumura

发明人： Kenji Kawano ,  Shinichi Ito ,  Katsuya Okumura

IPC分类号： G03F720

CPC分类号： G03F1/30 ,  G03F1/32 ,  G03F7/16

摘要： A resist pattern forming method according to this invention is characterized by forming a resist film to have different thicknesses in one region and the other region in accordance with the pattern size or pattern density of a photomask. The resist pattern forming method according to this invention is characterized by selectively forming a resist film in part of a substrate region by applying a resist in part of the region without applying the resist in the remaining region. The resist pattern forming method according to this invention is characterized by selectively forming a resist film on part of a substrate on the basis of the intensity of exposure light observed at the resist film.

摘要翻译： 根据本发明的抗蚀剂图案形成方法的特征在于，根据光掩模的图案尺寸或图案密度，在一个区域和另一个区域中形成具有不同厚度的抗蚀剂膜。 根据本发明的抗蚀剂图案形成方法的特征在于，通过在部分区域中施加抗蚀剂而不在其余区域中施加抗蚀剂，在基底区域的一部分中选择性地形成抗蚀剂膜。 根据本发明的抗蚀剂图案形成方法的特征在于，基于在抗蚀剂膜处观察到的曝光光的强度，在基板的一部分上选择性地形成抗蚀剂膜。

公开(公告)号：US5994218A

公开(公告)日：1999-11-30

申请号：US724735

申请日：1996-09-30

申请人： Shigeki Sugimoto ,  Katsuya Okumura

发明人： Shigeki Sugimoto ,  Katsuya Okumura

IPC分类号： H01L23/522 ,  H01L21/304 ,  H01L21/768 ,  H01L21/28

CPC分类号： H01L21/76877

摘要： A silicon film is deposited using low pressure chemical vapor deposition (LPCVD) to fill in openings formed in a substrate such as an insulating film. An aluminum film and a metal film are then formed on the silicon film. A thermal process is then carried out. This thermal process causes the deposited aluminum to replace the silicon in the openings because the silicon migrates to the metal and forms a metal silicide film. The aluminum which replaces the silicon in the openings has few or no voids. The metal silicide film any remaining portion of the aluminum film are then removed using CMP, for example.

摘要翻译： 使用低压化学气相沉积（LPCVD）沉积硅膜以填充形成在诸如绝缘膜的衬底中的开口。 然后在硅膜上形成铝膜和金属膜。 然后进行热处理。 该热处理使沉积的铝取代了开口中的硅，因为硅迁移到金属并形成金属硅化物膜。 在开口中替代硅的铝很少或没有空隙。 然后使用CMP除去铝膜的任何剩余部分的金属硅化物膜。